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    Toshiba America Electronic Components GT15J103

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    T15J10 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    T15J10 Shindengen Electric TRANS DARLINGTON PNP 100V 15A 3MTO-3P Original PDF
    T15J10 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF

    T15J10 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SB1285

    Abstract: T15J10
    Text: SHINDENGEN Darlington Transistor OUTLINE DIMENSIONS 2SB1285 Case : MTO-3P T15J10 Unit : mm -15A PNP RATINGS ●Absolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage


    Original     		PDF 2SB1285 T15J10) 2SB1285 T15J10

    22a ic

    Abstract: soa 01 2SB1285 T15J10
    Text: SHINDENGEN Darlington Transistor OUTLINE DIMENSIONS 2SB1285 Case : MTO-3P T15J10 Unit : mm -15A PNP RATINGS œAbsolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage


    Original     		PDF 2SB1285 T15J10) 22a ic soa 01 2SB1285 T15J10

    T15J10

    Abstract: No abstract text available
    Text: 2SB1285 T15J10 PNP4f—lJ > h > h 7 > v X # / P N P Darlington Transistor Outline Dimensions Equivalent Circuit C ase : M T 0 -3 P Absolute Max. Ratings • m ■■ ■./•' Item \ ,ie 5t ■S y m b o l s S to r a g e T e m p e r a tu r e J u n c ti o n T e m p e r a tu r e


    OCR Scan     		PDF 2SB1285 T15J10) TP15J10) T15J10

    MG150N2YS40

    Abstract: MG100J2YS45 mg75j2ys40 MG150J2YS40 MG15N6ES42 MG100G2YS1 mg75n2ys40 mg25n2ys40 MG200J2YS40 MG50J6ES40
    Text: Connection Maximum Bating VCES V ICÌAÌ 8 15 25 G T15J101* eoo G T8J101* G T8J102(SM )* G T15J102* T15J103(SMJ* 50 75 G T60J101* <60A) G T 80J101* GT50J1Û2+ (80A) M G 50 J1B S 1 1 MG75J1SB11 100 150 200 300 400 500 G T50J101* Q T25J101* MG25J1BS11 MG100J1BS11 MG150J1BS11


    OCR Scan     		PDF T8J101* T8J102 T15J101* T15J102* GT15J103 T25J101* MG25J1BS11 T50J101* T60J101* 80J101* MG150N2YS40 MG100J2YS45 mg75j2ys40 MG150J2YS40 MG15N6ES42 MG100G2YS1 mg75n2ys40 mg25n2ys40 MG200J2YS40 MG50J6ES40

    15J102

    Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346
    Text: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811


    OCR Scan     		PDF 2SA949U50VI 2AC2229 2SA1145U50V) 2SC2705( 2SC2230 2SA817A 2SC1627A 2SA1811 2SC4707 2SA965 15J102 Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346

    j2y transistor

    Abstract: T15J10 MP4704 MG100M2CK1 2sb834 MP3103 MG50J6ES91 MP3002 mp4505 2sc497
    Text: As you well know, semiconductors are today essential for use in a very wide range of applications— from consumer to industrial use. In any application, your choice of Toshiba semiconductors will always be correct. To help you choose which semi­ conductor is correct for your application, this brochure outlines maximum ratings,


    OCR Scan     		PDF O220AB O-126 j2y transistor T15J10 MP4704 MG100M2CK1 2sb834 MP3103 MG50J6ES91 MP3002 mp4505 2sc497

    MG100g2ys1

    Abstract: mg25q6es1 MG100J2YS1 YTF830 gt25q103 GT15H101 toshiba MG50N2YS9 MG200J2YS1 mg75n2ys1 MG75J2YS1
    Text: SUMMARY OF POWER MOS FET BY APPLICATIONS Applications of the Toshiba power MOS FETs are gouped to their rated voltages and currents as shown below. POWER MOS FET FAMILIES Q tt-MOS Series Standard ^-M OS family gained outstanding polurarity in the market Q tt-MOS II Series


    OCR Scan     		PDF EG50N2YS9* G15N2YSI MG25N2YS1 MG50N2YS1 G35Q2YSI MG25Q2YS1 MG50Q2YS1 MG25S2YS1 G25N1JS1 G50N1JS1 MG100g2ys1 mg25q6es1 MG100J2YS1 YTF830 gt25q103 GT15H101 toshiba MG50N2YS9 MG200J2YS1 mg75n2ys1 MG75J2YS1

    TH3L10

    Abstract: TK3L10 TH3L10 ic 2SA1679 T7K40 TH3L10 Z 2SD1788 2SC4148 TP10S4 TP10T4
    Text: POWER TRANSISTORS SHINDENGEN ELECTRIC MFG • 021= 1307 0 0 0 0 0 2 1 ISHE J G to r Induction C o o k e t^ a aa * é ä Absolute Maximum Ratings E IA J Type No. No. — — 1 i M a £ V o bo *-T30G 40 VCEO V eb o Ic Ib PT [V ] [V ] [V ] [A ] [A ] [W ] 800


    OCR Scan     		PDF GQ00G21 T30Q40 TP10T4 TP12T4 TP15T4 2SC4148, TP10S4 TP12S4 TP15S4 TH3L10 TH3L10 TK3L10 TH3L10 ic 2SA1679 T7K40 TH3L10 Z 2SD1788 2SC4148 TP10T4