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    2N5609 TRANSISTOR Search Results

    2N5609 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
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    2N5609 TRANSISTOR Price and Stock

    Microchip Technology Inc 2N5609

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    2N5609 TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    5609

    Abstract: DATASHEET 5609 2N5605 2*5609 2N5607 2N5609 2N5611
    Text: Product Specification www.jmnic.com Silicon PNP Power Transistors 2N5605 2N5607 2N5609 2N5611 DESCRIPTION ・With TO-66 package ・Excellent safe operating area ・Low collector-emitter saturation voltage APPLICATIONS ・For general-purpose amplifier ; and switching applications


    Original     		2N5605 2N5607 2N5609 2N5611 2N5605 2N5607/5609 5609 DATASHEET 5609 2*5609 2N5611 PDF

    5609

    Abstract: DATASHEET 5609 2*5609 2N5607 2N5609 2N5605 5609 c 2N5611
    Text: SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2N5605 2N5607 2N5609 2N5611 DESCRIPTION •With TO-66 package ·Excellent safe operating area ·Low collector saturation voltage APPLICATIONS ·For general-purpose amplifier ; and switching applications


    Original     		2N5605 2N5607 2N5609 2N5611 2N5605 2N5607/5609 5609 DATASHEET 5609 2*5609 5609 c 2N5611 PDF

    2N3340

    Abstract: 2N3581 2N2520 2N5609 2N5003 2N5005 2N5287 2N5312 2N5316 2N5607
    Text: 8134693 SEMICOA MD ] e | 0134t. ^ □□QDIE'J 1 | _,T :<5 7 - 0 \ PNP SILICON POWER TRANSISTORS Cont’d) Electrical Characteristics @ 25°C Maximum Ratings Device Type No. PNP Dissipation @25°C (Case) Watts 2N5287 2N5003 2N5005 2N5607 2N5609 2N5316 2N5312


    OCR Scan     		2N5287 2N5003 2N5005 2N5607 2N5609 2N5316 2N5312 2N6186 2N6187 2N5853 2N3340 2N3581 2N2520 2N5609 PDF

    5609

    Abstract: DATASHEET 5609 2N5609 5609 c 2N5607 S 5609 2N5605 2N5611 ic 5611
    Text: Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N5605 2N5607 2N5609 2N5611 DESCRIPTION ・With TO-66 package ・Excellent safe operating area ・Low collector saturation voltage APPLICATIONS ・For general-purpose amplifier ; and switching applications


    Original     		2N5605 2N5607 2N5609 2N5611 2N5605 2N5607/5609 5609 DATASHEET 5609 5609 c S 5609 2N5611 ic 5611 PDF

    LC51

    Abstract: No abstract text available
    Text: HI-REL SEUELAB SEMELABE BI-POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY Type Number Rel Code 2N5602 2N5603 2N5604 2N5605 2N5606 2N5607 2N5608 2N5609 2N5610 2N5611 2N5612 2N5613 2N5614 2N5615 2N5616 2N5617 2N5618 2N5619 2N5620 2N5621 2N5622 2N5623 2N5629


    OCR Scan     		A1331 2N5602 2N5603 2N5604 2N5605 2N5606 2N5607 2N5608 2N5609 2N5610 LC51 PDF

    2N5609

    Abstract: voltages
    Text: INCHANGE Power Transistors 2N5609 Silicon PNP Transistors Features With TO-66 package Designed for use as high-frequency drivers in audio amplifier Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNIT 80 V Collector to emitter voltage 80 V Emitter to base voltage


    Original     		2N5609 2N5609 voltages PDF

    N6211

    Abstract: 23911 jan2N6211
    Text: Micmsemi PNP Transistors . P art N um ber ' | M icrosem i l D ivision fr PPC, , PPC, 2N5605 2N5607 PPC, PPC, 2N5608 PPC, 2N5609 PPC, 2N5611 PPC, TIP30 PPC, TIP30A PPC, TIP30B PPC, TIP30C PPC, 2N4999 PPC, 2N5001 PPC, 2N6420 PPC, 2 N 6211 PPC,


    OCR Scan     		JANTXV2N3741 T0-220 T0-22C) O-220 N6211 23911 jan2N6211 PDF

    SILICON TRANSISTOR CORP

    Abstract: STP515 2N4114 2N4211 2n5609 transistor 2N5627 2N5678 2N5251 2n5609 stp6060
    Text: SILICON TRANSISTOR CORP 47E D • 8E54022 OOOOflll t. « S T C 2 AMP T*VS*07 5 AMP Ic CONTINUOUS NPN TYPICAL SPECIFICATIONS VCEO To 300V hFE 20-120 PACKAGE y ^ « 1A 5V r a TO-257 I PNP v c e o t o io o v VCEO To 300V VCEO To 100V h FE20-120(a1A 5 V hFE 20-120 2 .5 A 5 V


    OCR Scan     		8E54022 FE20-120 30MHz fTTo40M 50MHz 2N4863 2N5662 N5663 2N5333 SILICON TRANSISTOR CORP STP515 2N4114 2N4211 2n5609 transistor 2N5627 2N5678 2N5251 2n5609 stp6060 PDF

    N5408

    Abstract: SDT3324 N5404 2N5286 2N5609 2N5287 2n5601 2N5153 2N5333 2N5384
    Text: 27 SILICON POWER TRANSISTORS CUR R E N T G A IN S A T U R A T IO f >1 VO LTA G ES @ TYPE NUMBER 5 CASE TYPE V CBO V AMP SILICON PNP V CEO V V EBO V h FE M IN . I M A X . V CE V I >C A V CE s V BE(s) V I V 'c A 1 ’b A Observe (—) Negative Polarity 2N5153


    OCR Scan     		2N5153 2N5286 O-111-I 2N5287 2N5333 2N5384 O-111-1 2IM5404 2IM5405 N5408 SDT3324 N5404 2N5609 2n5601 PDF

    SDT84

    Abstract: No abstract text available
    Text: 8 3 6 8 6 0 2 S O L IT R O N D E V I C E S INC 95 D S0LITR0N DEVICES INC TS 02766 D T' J ?3- DE ö 3 h ö b ü 2 □ 00S7t.b 4 Devices. Inc. PLANAR POWER TRANSISTORS M [continued] (A fT MIN (MHz) PT MAX (W) CASE TYPE CHIP TYPE 0.30 0.30 0.30 0.30 0.25 2.0


    OCR Scan     		00S7t SDT40302 SDT40303 SDT40304 SDT40305 SDT41301 SDT41302 SDT41303 SDT41304 SDT41305 SDT84 PDF

    BD160

    Abstract: 2SC3303 2SD1147 to-53 2sb550
    Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO Of) hFE fT ICBO Max Max toN Max ON) Mln (Hz) (A) (8) PD r (CE)sat Toper Max (Ohms) Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . . .10 . . .


    Original     		2N3192 2N1208 2N1250 2N2384 2N4902 2N5867 2N5869 2N4905 2N5068 2N4914 BD160 2SC3303 2SD1147 to-53 2sb550 PDF

    2n5480

    Abstract: No abstract text available
    Text: K □ □ □ ° Q ru ru lr X 0» <0 Q. S E _ » < Polarity Ln u> CO K m =a o o CD r- CO CD CD CD IO lO Ó Ó Ó Ó Ó 1— 1 — 1— f— I— to to CO CO to Ó Ó Ó Ó Ó f— 1— 1— 1— 1— TO-3 TO-39/TO-5 TO-111 TO-61 TO-3 » TO-3 T0-3 TO-59 T0-111


    OCR Scan     		O-39/TO-5 O-111 T0-111 O-111 24UNF 2n5480 PDF

    KSD 166

    Abstract: LT 7202 diode Kertron LA 4301 transistor KSP 13 801 KDA 1.2 2N5085 LT 7207 KSP 13 801 0/transistor KSP 13 801
    Text: Hi-Rel PLANAR POW ER-2 AMP NPN • ii lll ii TYPE CASE REAKDOWNilllllliH if i VOLTAGES Veb ' VCE 2N 1252 TO-5 VCB 30 2N 1253 TO-5 30 20 2N 1506 60 40 2N 1506A TO-5 TO-5 2N 1714 TO-5 80 60 2N 1716 TO-5 80 90 90 2N 1718 MT-13 90 60 2N 1720 MT-13 90 2N 1889 TO-5


    OCR Scan     		MT-13 KSD 166 LT 7202 diode Kertron LA 4301 transistor KSP 13 801 KDA 1.2 2N5085 LT 7207 KSP 13 801 0/transistor KSP 13 801 PDF

    THINKI transistor catalog

    Abstract: audio amplifier ic bd249c catalog AUDIO HIGH POWER AMPLIFIER 3DD301 2sc3229 2SA747
    Text: THINKI TRANSISTOR CATALOG Power Transistors For Audio Power Amplifier PC IC Vceo W (A) (V) Model Vcbo Vebo (V) (V) Vce(sat) hFE fT (V) VCE(V) IC(A) max IC(A) (MHz) Package Function TYP IB(A) 1 -0.05 -150 2SA914 -150 -5 90-450 -5 -0.01 -1 -0.03 -0.003


    Original     		2SA914 O-126 2SA900 2SC2556 2SC2556A LM317K O-220 LM317T THINKI transistor catalog audio amplifier ic bd249c catalog AUDIO HIGH POWER AMPLIFIER 3DD301 2sc3229 2SA747 PDF

    Diode 400V 5A

    Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
    Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM


    Original     		2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 Diode 400V 5A lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN PDF

    1N5438

    Abstract: tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175
    Text: The Semiconductor DataBook This is the first supplement to the 4th Edition o f the Semiconductor Data Book originally published in July 1969. It is produced to keep an up-to-date listing o f the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers introduced after the publi­


    OCR Scan     		27TfC 1N5438 tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175 PDF

    MC2259

    Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
    Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the


    OCR Scan     		PDF