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    2N5251 Search Results

    2N5251 Datasheets (22)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2N5251 API Electronics Short form transistor data Short Form PDF
    2N5251 Diode Transistor NPN Transistor Selection Guide Scan PDF
    2N5251 Diode Transistor Transistor Short Form Data Scan PDF
    2N5251 General Diode Transistor Selection Guide Scan PDF
    2N5251 General Transistor NPN Power Transistors Scan PDF
    2N5251 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N5251 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N5251 Unknown Vintage Transistor Datasheets Scan PDF
    2N5251 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N5251 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N5251 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N5251 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N5251 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N5251 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2N5251 New England Semiconductor NPN TO-53 / TO-114 Transistor Scan PDF
    2N5251 New England Semiconductor BIPOLAR NPN TRANSISTOR TO-63 Scan PDF
    2N5251 New England Semiconductor NPN Transistors, TO-63 / TO-114 Scan PDF
    2N5251 Pirgo Electronics Low Frequency Silicon Power Transistor Scan PDF
    2N5251 PPC Products Transistor Short Form Data Scan PDF
    2N5251 Solidev Semiconductors Solid State Products (Transistor Guide) Scan PDF

    2N5251 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SDT96302

    Abstract: TO114 SDT96303 transistor 2n4866 2N5250 2N5251 SDT96301 TO-114 C3284 power transistor 2N4866
    Text: Device Type VCEO hFE V Min/Max @ IC (A) 2N4865 2N4866 2N5250 2N5251 SDT96301 SDT96302 SDT96303 SDT96401 SDT96402 SDT96403 SDT96901 SDT96902 SDT96903 80 120 100 150 60 100 140 60 100 140 60 100 140 10/40 10/40 10/40 10/40 10 10 10 10 10 10 10 10 10 70.0 70.0


    Original     		PDF 2N4865 2N4866 2N5250 2N5251 SDT96301 SDT96302 SDT96303 SDT96401 SDT96402 SDT96403 SDT96302 TO114 SDT96303 transistor 2n4866 2N5250 2N5251 SDT96301 TO-114 C3284 power transistor 2N4866

    2N5251

    Abstract: 2N5250 2N5327 2N3902 2n3996 equivalent transistor 2N2880 2N3418 2N3419 2N3420 2N3421
    Text: Device Type 2N2880 JAN, TX, TXV 2N3418 JAN, TX, TXV 2N3419 JAN, TX, TXV 2N3420 JAN, TX, TXV 2N3421 JAN, TX, TXV 2N3439 JAN, TX, TXV 2N3440 JAN, TX, TXV 2N3740 JAN, TX, TXV 2N3741 JAN, TX, TXV 2N3749 JAN, TX, TXV 2N3846 JAN, TX 2N3847 JAN, TX 2N3902 JAN, TX


    Original     		PDF 2N2880 2N3418 2N3419 2N3420 2N3421 2N3439 2N3440 2N3740 2N3741 2N3749 2N5251 2N5250 2N5327 2N3902 2n3996 equivalent transistor 2N2880 2N3418 2N3419 2N3420 2N3421

    2N5250

    Abstract: 2N5251 mug 14 431 NIL-S-19500 2N4865 2N5151 FSC5961 2N5250 JAN Xelerated SAA 1006
    Text: I I I IWE-FQUND I HIL-s-19500/380B 4 June 1991 SVPSl!5EDItK MIL-s-19500/180A( SLl 17 Septerber 1968 N2L2TARY SPECIP3CATICN SSN203N3WXUR DSV2CE, TWSISIWR,NPN,S2LIIXN,m TYPES 2N4865,2N5250,2N5251,JAIWX, JAN2’XV, ~ JANS MS s~ification is approvedfor w hy e21 Ceptusxts and lq~cies of the Deprt.uentof Defense.


    Original     		PDF HIL-s-19500/380B MIL-s-19500/180A( SSN203N3WXUR TYPESN4865, N5250, N5251, NIL-S-19500. F3-114) Force-17 koject5961-1222] 2N5250 2N5251 mug 14 431 NIL-S-19500 2N4865 2N5151 FSC5961 2N5250 JAN Xelerated SAA 1006

    TO114

    Abstract: No abstract text available
    Text: Micmsemi NPN Transistors Pa rt N u m b e r M ic ro s e m i P ackage D iv is io n O u tlin e Type Mil ; Data Î 2N568S 2N5686 2N6322 2N6324 2N6323 2N6325 2N5587 2NS588 2N4865 2N5250 2N4866 2N5251 PPC, PPC, PPC, PPC, PPC, PPC, PPC, PPC, PPC, PPC, PPC, PPC, Inc.


    OCR Scan     		PDF 2N568S 2N5686 2N6322 2N6324 2N6323 2N6325 2N5587 2NS588 2N4865 2N5250 TO114

    2N1479

    Abstract: 2N1480 2N1481 2N1482 2N1700 2N5781 2N5782 2N5784 2N5785 2N5786
    Text: "flM NPN TO-39/TO-5 2848352 DIODE TRANSISTOR DE J 2 B M Û 3 S E 0DÜG155 5 C O . I N C 84D 00125 D jr. 3 l-O fT D1QDE TMI\l.515T0ft Cü.if\IC. 201 686-0400 • Telex: 139-385 • Outside NY & NJ area ca ll TO LL FREE 800-526-4581 FA X No. 201-575-5863


    OCR Scan     		PDF O-39/TO-5 D00D1SS 515TQft 2N1479 2N1480 2N1481 2N1482 2N1700 2N5784 2N5785 2N5781 2N5782 2N5786

    2N558B

    Abstract: 2N3S49 2N1936 2N1937 2N3265 2N3266 2N3846 2N3847 2N3848 2N4002
    Text: General Transistor Corporation CASE TO-63 le max = 20 to 60A V c e o (su s) NPN Power Transistors Typ*No. VCEO (•!*) <v) IC (mu) (A) hFE&C/VCE (min-mi* Q AY) VCE(SAT) QIC/IB (V0A/A) VBE ic/vce (V©A/V) VBE (SAT) ©OB (V0A/V) 2N1936 2N1937 2N3265


    OCR Scan     		PDF 0-300V 2N1936 2N1937 2N3265 2N3266 2N5250 2N5251 2N5489 2N5587 2N558B 2N558B 2N3S49 2N1936 2N1937 2N3265 2N3266 2N3846 2N3847 2N3848 2N4002

    TO63 package

    Abstract: 2N5250 2N3265 transistor 114 2N5539 2N3150 2N3266 2N3847 2N4002 2N4003
    Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-63 PACKAGE DEVICE TYPE V ceo sus VOLTS Ic (max) AMPS 1*FE@ Ic/ V ce (min/max @ A/V) VcE(sat) @ I c/I b (V @ A/A) p“ d * WATTS Ìt (MHz) NPN TO-63 2N3265 90 20 25-55@15/2 l@20/2 100 20 2N3266 60 20 20-80@15/3


    OCR Scan     		PDF 2N3265 2N3266 2N3846 2N3847 2N4002 2N4003 2N5539 2N6046 2N6047 2N6048 TO63 package 2N5250 transistor 114 2N3150

    2N5251

    Abstract: 2N1936 2N1937 2N3265 2N3266 2N3846 2N3847 2N3849 2N4002 TO114
    Text: NEU ENGLAND SEMICON DUC TOR bSbM'îSB 0 0 0 0 0 5 7 5RE T> 14 3 • Ic max = 2 0 to 6 0 A V ceo(sus) = 4 0 to 3 0 0 V fi = 0 .6 to 3 0 MHz IMPN TO-B3 Case 807 ' tc (MAX) (A) hFE @ IC/VCE (min-max @ A/V) 2N1936 2N1937 2N3265 2N3266 60 80 90 60 20 20 20 20


    OCR Scan     		PDF 000g05 2N1936 2N1937 2N3265 2N3266 1o05w1o 2n5250 2n5251 2n5489 2n5587 2N5251 2N1936 2N1937 2N3265 2N3266 2N3846 2N3847 2N3849 2N4002 TO114

    2N2819

    Abstract: 2N3149 2N3150 2N3151 2N5575 2N5587 2N5588 AP1066 AP1068 AP1110
    Text: 0043592 A P I A P I ELECTRONICS ELECTRONICS INC 26C INC Ëb d ÊT| 00240 00435^2 0 *T=‘ 3 3 - .Û I □□□□E4D 1 COLLECTOR CURRENT = 7 0 AMPS N PN TYPES D ev ice No C ase 2N3149 TO114 TO114 TO114 TO114 TO 114 TO114 2N3150 2N3151 A P1068 A P1110 AP1123


    OCR Scan     		PDF 2N3149 2N3150 2N3151 AP1068 AP1110 AP1123 2N5250 2N5251 AP1067 AP1091 2N2819 2N5575 2N5587 2N5588 AP1066

    2NS604

    Abstract: 2NS540 2NS154 SD716 SDT13305 2N5671 2N5005 SDT425 SDT7605 SDT96302
    Text: -Jfolìtron P L A N A R P O W E R T R A N S IS T O R S Devices. Inc H DEVICE TYPE VCEO V hFE MIN/MAX 2N2387 2N2988 2N2S89 2N2990 2N2991 80 100 80 100 80 2N2992 2N2993 2N2994 2N3439 2N3440 ÎA M W P K M ic (A) PT MAX (W) CASE TYPE CHIP TYPE ic (A) 25/75 25/75


    OCR Scan     		PDF 2N2387 2N2988 2N2S89 2N2990 2N2991 2N2992 2N2993 2N2994 2N3439 2N3440 2NS604 2NS540 2NS154 SD716 SDT13305 2N5671 2N5005 SDT425 SDT7605 SDT96302

    SILICON TRANSISTOR CORP

    Abstract: STP515 2N4114 2N4211 2n5609 transistor 2N5627 2N5678 2N5251 2n5609 stp6060
    Text: SILICON TRANSISTOR CORP 47E D • 8E54022 OOOOflll t. « S T C 2 AMP T*VS*07 5 AMP Ic CONTINUOUS NPN TYPICAL SPECIFICATIONS VCEO To 300V hFE 20-120 PACKAGE y ^ « 1A 5V r a TO-257 I PNP v c e o t o io o v VCEO To 300V VCEO To 100V h FE20-120(a1A 5 V hFE 20-120 2 .5 A 5 V


    OCR Scan     		PDF 8E54022 FE20-120 30MHz fTTo40M 50MHz 2N4863 2N5662 N5663 2N5333 SILICON TRANSISTOR CORP STP515 2N4114 2N4211 2n5609 transistor 2N5627 2N5678 2N5251 2n5609 stp6060

    aeg diode Si 61 L

    Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
    Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books


    OCR Scan     		PDF 11tA0A12 A025A A0290 U0U55 A0291 A0292 A0305 A0306 A0A56 A0A59 aeg diode Si 61 L aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680

    AP1110

    Abstract: 2N4866 AP1123 2N2819 2N3149 2N3150 2N3151 2N5575 2N5587 2N5588
    Text: 0043592 A P I A P I ELECTRONICS INC _26C 00240 ELEC T RO N IC S INC 2b D-7Î.33.ÛI D E :| Q Q 4 3 S C1S 0000240 1 f COLLECTOR CURRENT = 7 0 AMPS NPN TYPES Device No 2N3149 2N3150 2N3151 AP1068 AP1110 AP1123 Case TO114 TO114 TO114 TO114 TO114 TO 114


    OCR Scan     		PDF D043ST2 2N3149 2N3150 2N3151 AP1068 AP1110 AP1123 2N4866 2N5250 2N5251 2N2819 2N5575 2N5587 2N5588

    4233A

    Abstract: 535x 184 324 DIODE 2N5383 2N3055C
    Text: Contran ÄTTM,© STAND ARD PART LIST [continued] Devices. Inc STANDARD DIODE CHIP SELECTIONS PART No. Vr MIN. VO LTS Vp@ M AX. VO LTS If A M PS. trr N SE C . PA G E No. 5 31X C 003 531X C 004 532X C 001 532X C 002 532X C 003 100 400 50 80 100 1.3 1.8


    OCR Scan     		PDF 533XCD01 534XCD02 535XCQ01 2N1063 2N107Û 4233A 535x 184 324 DIODE 2N5383 2N3055C

    4010 IC

    Abstract: 2N6062 2N5927 ic 4010 2N4866 50110 TO-114 2N1936 2N1937 2N3266
    Text: NEU ENGLAND SEMICONDU CTOR b S b M ' m D000GS7 m 3 SRE D «NES Ic max — 2 0 to 6 0 A V ceo(sus) = 4 0 to 3 0 0 V fT = 0.6 to 3 0 MHz NPN TÜ-63 Case 807 V ce (sat ) @ IC/lB ( V @ A/A) VBE (SAT) @ IC/lB (V @A/A) VBE @ IC/VCE (V @ A/V) pd @ TC = 100 °C (Watts)


    OCR Scan     		PDF 0000G57 2N1936 2N1937 2N3265 102CV2 2N3266 602W2 2N4950 2N5250 507QT7 4010 IC 2N6062 2N5927 ic 4010 2N4866 50110 TO-114 2N1936 2N1937 2N3266

    MC2259

    Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
    Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the


    OCR Scan     		PDF

    RCA SK CROSS-REFERENCE

    Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
    Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered


    OCR Scan     		PDF

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    2N3265

    Abstract: 2N5251 2N5250 2n3599 2N4865 2n4211 2N5250 JANTX t0114 2N6060 2n6278 to63
    Text: A POW ERHOUSE BIPOLAR NPN PLANAR POW ER T R A N S IS T O R S TO-63 T0-114 •c VOLTS AMPS hFE min/max < < o m PEAK bvceo o DEVICE TYPE > PACKAGE VCE seti max VOLTS 'C A A 2N3265 90 20.0 25- 55 15.0/2.0 1.0 2 0 .0 /2.0 2N3266 60 20.0 20- 80 15.0/3.0 1.6


    OCR Scan     		PDF 2N3265 2N3266 2N3597 2N3598 2N3599 2N4002 2N4003 2N4210 2N4211 2N6060 2N5251 2N5250 2N4865 2N5250 JANTX t0114 2n6278 to63

    2n5347

    Abstract: a/TO111 2n5100
    Text: 8254022 S I L I CON T R A N S I S T O R CORP 88D 0 0 7 9 4 “ûû D Ì T | a 2 5 4 0 2 2 00007=14 0 NUMERICAL INDEX TO INDUSTRIAL GRADE POWER TRANSISTORS Continued Polarity lc Max Amps 2N4999 2N5000 2N5001 2N5002 2N5003 PNF NPN PNP NPN PNP 2.0 2.0 2.0 5,0


    OCR Scan     		PDF 2N4999 2N5000 2N5001 2N5002 2N5003 O-111 2N5004 2N5005 2N5006 2n5347 a/TO111 2n5100

    Untitled

    Abstract: No abstract text available
    Text: BIPOLAR NPN PLANAR POWER TRANSISTORS AMPS hFE min/max m •c < < o PEAK o O CO LU 1 O J > o m > DEVICE TYPE PACKAGE VCE sat max VOLTS ■c @ 'b A A TO-63 2N3265 90 20.0 25- 55 15.0/2.0 1.0 20.0/2.0 O I« 2N3266 60 20.0 20- 80 15.0/3.0 1.6 20.0/2.0 ÎA jl


    OCR Scan     		PDF 2N3265 2N3266 2N3597 2N3598 2N3599 2N4002 2N4003 2N4210 2N6060 2N6215

    TO63 package

    Abstract: TRANSISTOR C 2570 TO114 package 2n3150 2N3265 transistor 2n4866 2N5251 2N5539 2N6048 2N5927 JAN
    Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-63 PACKAGE NPN TO-63 La Ì DEVICE TYPE d i A T * Tc = 100°C 1*FE@ Ic/ VcE min/max @ A/V VcE(sat) @ Ic^Ib (V @ A/A) p“ d* fr WATTS (MHz) 2N3265 90 20 25-55@15/2 1@20/2 100 20 2N3266 60 20 20-80@ 15/3


    OCR Scan     		PDF 2N3265 2N3266 2N3846 2N3847 2N4002 2N4003 2N5539 2N6046 2N6047 2N6048 TO63 package TRANSISTOR C 2570 TO114 package 2n3150 transistor 2n4866 2N5251 2N5927 JAN

    ap1110

    Abstract: TO114 2N5251 AP1123 2N2819 2N3150 2N4866 2N3149 2N3151 2N5575
    Text: 0043592 A P I A P I ELECTRONICS ELECTRONICS INC 2 6C I NC Ëb d ÊT| 00240 0 0 4 3 5 ^2 0 *T=‘ 3 3 - . Û I □□□□E4D 1 COLLECTOR CURRENT = 7 0 AMPS N PN TYPES D ev ice No C ase 2N3149 TO114 TO114 TO114 TO114 TO 114 TO114 2N3150 2N3151 A P1068 A P1110


    OCR Scan     		PDF 2N3149 2N3150 2N3151 AP1068 AP1110 AP1123 2N5250 2N5251 AP1067 AP1091 TO114 2N2819 2N4866 2N5575

    Untitled

    Abstract: No abstract text available
    Text: General Transistor Corporation CASE TO-63 le max = 20 to 60A V c e o (su s) * NPN Power Transistors (A) hFE&C/VCE (mln-mu A/V) VCE(SAT) ©IC/IB (V0A/A) VBE ©IC/VCE (V© A/V) VBE(SAT) ©OB (V A/V) 60 80 90 60 20 20 20 20 10-50 @10/10 10-50 @10/10 25-55 @15/2


    OCR Scan     		PDF 2N3848 2N3S49 2N4002 2N4003 2N4210 2N4211 2N5539