MT3S111TU
Abstract: No abstract text available
Text: MT3S111TU TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111TU VHF-UHF Low-Noise, Low-Distortion Amplifier Application Unit: mm 2.1±0.1 3 R5 1 1 3 2 0.7±0.05 Marking +0.1 0.3 -0.05 High Gain: |S21e|2=12.5 dB typ. (@ f=1 GHz) 0.166±0.05
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MT3S111TU
MT3S111TU
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MT3S113
Abstract: transistor 2F to-236 4360A
Text: MT3S113 TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113 VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm FEATURES • Low Noise Figure:NF=1.15dB Typ. (@ f=1GHz) • High Gain:|S21e|2=11.8dB(Typ.) (@ f=1GHz) Marking
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MT3S113
O-236
SC-59
MT3S113
transistor 2F to-236
4360A
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Untitled
Abstract: No abstract text available
Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT PC8240T6N SiGe:C LOW NOISE AMPLIFIER FOR GPS DESCRIPTION The μPC8240T6N is a silicon germanium carbon SiGe:C monolithic integrated circuit designed as low noise amplifier for GPS. This device exhibits low noise figure and high power gain characteristics, so this IC can improve the
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PC8240T6N
PC8240T6N
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726-BGA622H6820
Abstract: marking BXs SOT343 lna Germanium power
Text: D a t a S h e e t , R e v . 2 . 2 , A p r i l 2 00 8 B G A 6 22 Silicon Germanium Wide Band Low Noise A m p l i f i e r w i t h 2 k V E S D P r o te c t i o n S m a l l S i g n a l D i s c r et e s Edition 2008-04-14 Published by Infineon Technologies AG,
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14GHz,
BGA622
GPS05605
OT343
726-BGA622H6820
H6820
marking BXs
SOT343 lna
Germanium power
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Buffer Amplifier Ghz
Abstract: THM2004J
Text: PRELIMINARY THM2004J Wideband Linear Amplifier SiGe HBT MMIC Wideband Linear Amplifier Descriptions THM2004J is a high performance cascadeable 50-ohm amplifier. This RFIC uses the latest Silicon Germanium Hetero Junction Bipolar Transistor TAHB09 process of Tachyonics Co.,
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THM2004J
THM2004J
50-ohm
TAHB09)
30GHz
1000MHz
100MHz
Buffer Amplifier Ghz
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GSM 900, 1800, 1900 max power diagram
Abstract: TST0911 TST0911-TSQ TST0911-TSS PSSOP28 pcs cellular power amplifier 1900 mhz gsm amplifier atmel 935
Text: TST0911 Dualband SiGe Power Amplifier for GSM 900/1800/1900 Description The TST0911 is a monolithic dualband power amplifier IC. The device is manufactured using Atmel Wireless & Microcontrollers’ advanced Silicon-Germanium SiGe process and has been designed for use in GSM-based
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TST0911
TST0911
900-MHz
1800/1900-MHz
D-74025
20-Sep-00
GSM 900, 1800, 1900 max power diagram
TST0911-TSQ
TST0911-TSS
PSSOP28
pcs cellular power amplifier 1900 mhz
gsm amplifier
atmel 935
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ATMEL 935
Abstract: SMD 6 PIN IC VCC GND TST0912 TST0912-TJQ TST0912-TJS
Text: TST0912 SiGe Power Amplifier for GSM 900 Description The TST0912 is a monolithic integrated power amplifier IC. The device is manufactured using Atmel Wireless & Microcontrollers’ Silicon-Germanium SiGe technology and has been designed for use in GSM 900-MHz mobile phones.
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TST0912
TST0912
900-MHz
D-74025
28-Sep-00
ATMEL 935
SMD 6 PIN IC VCC GND
TST0912-TJQ
TST0912-TJS
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SGC-4486Z
Abstract: sgc- sot-86
Text: SGC-4486Z SGC-4486Z 50MHz to 4000MHz Active Bias Silicon Germanium Cascadable Gain Block 50MHz to 4000MHz ACTIVE BIAS SILICON GERMANIUM CASCADABLE GAIN BLOCK RFMD Green, RoHS Compliant, Pb-Free Package: SOT-86 Product Description Features RFMD’s SGC-4486Z is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with a patented active bias network. The
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SGC-4486Z
50MHz
4000MHz
4000MHz
OT-86
SGC-4486Z
sgc- sot-86
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4463Z
Abstract: SGC-4463Z
Text: SGC-4463Z SGC-4463Z 50MHz to 4000MHz ACTIVE BIAS SILICON GERMANIUM CASCADABLE GAIN BLOCK RFMD Green, RoHS Compliant, Pb-Free Package: SOT-363 Product Description Features RFMD’s SGC-4463Z is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with a patented active bias network. The
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SGC-4463Z
50MHz
4000MHz
OT-363
SGC-4463Z
1000pF
EDS-104979
4463Z
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AZ100EP16VS
Abstract: AZ100EP16VST AZ10EP16VS AZ10EP16VST MC100EP16VS NC 1350
Text: ARIZONA MICROTEK, INC. AZ10EP16VS AZ100EP16VS ECL/PECL Differential Receiver with Variable Output Swing FEATURES • • • • • Silicon-Germanium for High Speed Operation 150ps Typical Propagation Delay AZ100EP16VS Functionally Equivalent to ON Semiconductor MC100EP16VS
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AZ10EP16VS
AZ100EP16VS
150ps
AZ100EP16VS
MC100EP16VS
AZ10EP16VST
AZ100EP16VST
AZ10/100EP16VSL
AZ10/100EP16VSL+
EP16VS
AZ100EP16VST
AZ10EP16VS
AZ10EP16VST
MC100EP16VS
NC 1350
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C0603COG500-680JNE
Abstract: SRF-1016 C0603COG500-101JNE SRF-2016
Text: SRF-1016 Z 65MHz to 300MHz Silicon Germanium IF Receiver SRF-1016(Z) Preliminary 65MHz to 300MHz SILICON GERMANIUM IF RECEIVER RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: TSSOP, 16-Pin, 5.0mmx6.4mmx1.0mm Product Description Features RFMD’s SRF-1016 is a quadrature demodulator RFIC designed for UHF
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SRF-1016
65MHz
300MHz
16-Pin,
16-pin
TCR0603-16W-000T
C0603COG500-680JNE
C0603COG500-101JNE
SRF-2016
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1900mhz
Abstract: CL10B103KBNC LL1608-FS27NJ SGL-0263
Text: SGL-0263 Z SGL-0263(Z) 1400MHz to 2500MHz Silicon Germanium Cascadable Low Noise Amplifier 1400MHz to 2500MHz SILICON GERMANIUM CASCADABLE LOW NOISE AMPLIFIER RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: SOT-363 Product Description Features
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SGL-0263
1400MHz
2500MHz
OT-363
1900MHz
50GHz.
1900mhz
CL10B103KBNC
LL1608-FS27NJ
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rohm mch
Abstract: ECB-100607 SGA-6589 SGA-6586 Germanium Amplifier w061 PA DRIVER AMPLIFIER SGA6589 AN012 EAN-101613
Text: DESIGN APPLICATION NOTE - AN012 SGA-6589 Wideband 50-1000 MHz Driver Circuit Abstract New Silicon / Germanium amplifier gain blocks exhibit a combination of wide bandwidth, high gain,IP3 and low noise figure. The SGA6589 is a medium power gain block for which a versatile,
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AN012
SGA-6589
SGA6589
SGA-6589
EDS-101268)
EAN-101613
rohm mch
ECB-100607
SGA-6586
Germanium Amplifier
w061
PA DRIVER AMPLIFIER
AN012
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4363Z
Abstract: SiGe HBT GAIN BLOCK MMIC AMPLIFIER SGC-4363Z
Text: SGC-4363Z SGC-4363Z 50MHz to 4000MHz Active Bias Silicon Germanium Cascadable Gain Block 50MHz to 4000MHz ACTIVE BIAS SILICON GERMANIUM CASCADABLE GAIN BLOCK RFMD Green, RoHS Compliant, Pb-Free Package: SOT-363 Product Description Features RFMD’s SGC-4363Z is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with a patented active bias network. The
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SGC-4363Z
50MHz
4000MHz
4000MHz
OT-363
SGC-4363Z
4363Z
SiGe HBT GAIN BLOCK MMIC AMPLIFIER
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SGL-0363Z
Abstract: SGL0363Z IrL 1540 N l03z
Text: SGL-0363Z SGL-0363Z 5MHz to 2000MHz Low Noise Amplifier Silicon Germanium 5MHz to 2000MHz LOW NOISE AMPLIFIER SILICON GERMANIUM RFMD Green, RoHS Compliant, Pb-Free Package: SOT-363 Product Description Features RFMD’s SGL-0363Z is a low power, low noise amplifier. It is designed for
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SGL-0363Z
2000MHz
OT-363
SGL-0363Z
200MHz
900MHz.
NetwoSGL-0363Z
SGL0363Z
IrL 1540 N
l03z
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SGC6489Z
Abstract: SGC-6489
Text: SGC-6489Z SGC-6489Z 50MHz to 3500MHz Silicon Germanium Active Bias Gain Block 50MHz to 3500MHz SILICON GERMANIUM ACTIVE BIAS GAIN BLOCK Package: SOT-89 Product Description Features RFMD’s SGC-6489Z is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active bias
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SGC-6489Z
50MHz
3500MHz
OT-89
SGC-6489Z
SGC6489Z
SGC-6489
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SGA-1263
Abstract: SGA-1263Z BY 356
Text: SGA-1263 Z SGA-1263(Z) DCto4000MH z Silicon Germanium HBT Cascadable Gain Block DCto4000MHz SILICON GERMANIUM HBT CASCADABLE GAIN BLOCK Package: SOT-363 Product Description Features RFMD’s SGA-1263(Z) is a Silicon Germanium HBT Heterostructure Bipolar Transistor (SiGe HBT) amplifier that offers excellent isolation and flat gain
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SGA-1263
DCto4000MH
DCto4000MHz
OT-363
50GHz
EDS-100935
SGA-1263
SGA-1263Z
BY 356
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IF transformer
Abstract: C0603COG500-101JNE ADT1-6T SRF-2016 SRF-1016 C0603COG500220JNE "IF transformer"
Text: SRF-2016 Z SRF-2016(Z) 200MHz to 600MHz Silicon Germanium IF Receiver 200MHz to 600MHz SILICON GERMANIUM IF RECEIVER RoHS Compliant and Pb-Free Product (Z Part Number) Package: TSSOP, 16-Pin, 5.0mmx6.4mmx1.0mm Product Description Features RFMD’s SRF-2016 is a quadrature demodulator RFIC designed for UHF
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SRF-2016
200MHz
600MHz
16-Pin,
16-pin
Mat03
IF transformer
C0603COG500-101JNE
ADT1-6T
SRF-1016
C0603COG500220JNE
"IF transformer"
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2N3147
Abstract: 2N3146 Texas Germanium Germanium power
Text: TYPES 2N3146, 2N3147 P-N-P ALLOY-JUNCTION GERMANIUM POWER TRANSISTORS S 5 £m HIGH-VOLTAGE HIGH-POWER TRANSISTORS for w V» z M Z z P ft z “ MILITARY AND INDUSTRIAL APPLICATIONS m ech a n ica l d a ta S » I- These tran sistors a re in precisio n w e ld e d , h e rm e tic a lly s e a le d en closures. The m ounting b a s e p ro v id e s an
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2N3146,
2N3147
2N3146
Texas Germanium
Germanium power
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2N404
Abstract: MPS404 2n404a a5t404
Text: TYPES A5T404, A5T404A, A8T404, A8T404A P-N-P SILICON TRANSISTORS _B U L L E T I N N O . O L -S 7 3 1 1 9 7 9 , M A R C H 1973 SILECTt TRANSISTORS* FOR LOW-COST REPLACEMENT OF GERMANIUM 2N404, 2N404A • A5T404, A5T404A Have Standard TO-18 100-mil Pin-Circle Configuration
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A5T404,
A5T404A,
A8T404,
A8T404A
2N404,
2N404A
A5T404A
100-mil
2N404
MPS404
2n404a
a5t404
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Untitled
Abstract: No abstract text available
Text: Temic TST0911 S e m i c o n d u c t o r s Dualband SiGe-Power Amplifier for GSM 900/1800/1900 Description The TST0911 is a monolithic dualband power amplifier IC. The device is manufactured using TEMIC Semiconductors’ advanced Silicon-Germanium SiGe process and has been designed for use in GSM-based
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TST0911
TST0911
900-MHz
1800/1900-MHz
D-74025
14-Apr-99
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Untitled
Abstract: No abstract text available
Text: Temic TST0922 S e m i c o n d u c t o r s SiGe-Power Amplifier for GSM 900 Flipchip Version Description The TST0922 is a monolithic integrated power amplifier IC in flipchip technology. The device is manufactured using TEMIC Semiconductors’ Silicon-Germanium
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TST0922
TST0922
D-74025
25-Mar-99
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applications of ujt with circuits
Abstract: UJT 2N491 applications of ujt UJT specification ujt firing circuits of scr ujt transistor 2N489 UJT 2N492 Germanium Power Devices TRANSISTOR 2N492
Text: Germanium Power Devices Corp SILICON UNIJUNCTION TRANSISTOR Specifications S IÚCON TYPES I Silicon Unijunction T ra n sistors are three-term inal devices having a stable “ N ” type negative resistance characteristic over a wide tem perature range. A stable peak point
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3T47375
506-475-5982---fax
applications of ujt with circuits
UJT 2N491
applications of ujt
UJT specification
ujt firing circuits of scr
ujt transistor
2N489
UJT 2N492
Germanium Power Devices
TRANSISTOR 2N492
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1N48 diode
Abstract: diode in34a IN34A DIODE 1N54 1N34 DIODE diode 1n34 1N34 1N48 1N38A 1Ns4
Text: CRIMSON S EMICONDUCTOR INC ' TT 2514096 CRIMSON SEMICONDUCTOR 99 D 0 0 3 4 9 D » e | 2514EHL. □ 0 0 0 34 e] □ INC 7"' O / - o 7 t GERMANIUM DIODE TYPE PEAK REVERSE V O LTAG E AVERAGE F.ORW ARD CURRENT M IN IM U M FO R W A R D CURRENT A T 1 VO LT M A X IM U M
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00034e]
1N34A
at-10V
at-25
1N38A
1N38B
-100V
at-50V
at-50
1N52A
1N48 diode
diode in34a
IN34A
DIODE 1N54
1N34 DIODE
diode 1n34
1N34
1N48
1Ns4
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