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    A1331 Search Results

    A1331 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    G40HA1331HR Amphenol Communications Solutions Mini-SAS HD Internal Connectors, High Speed Input Output Connectors, Right angle press fit ,1x1 tray package 85ohm. Visit Amphenol Communications Solutions
    SIT9375AI-04A1-3310-125.000000 SiTime SIT9375AI-04A1-3310-125.000000 Datasheet
    SIT9375AI-02A1-3310-125.000000 SiTime SIT9375AI-02A1-3310-125.000000 Datasheet
    SIT9375AI-01A1-3310-125.000000 SiTime SIT9375AI-01A1-3310-125.000000 Datasheet
    SIT9375AE-02A1-3310-25.000000 SiTime Ultra-low Jitter Differential XO for Standard Networking Frequencies Datasheet
    SiT9501AI-01A1-3310-156.250000 SiTime Ultra-low Jitter Differential XO for Standard Networking Frequencies Datasheet
    SF Impression Pixel

    A1331 Price and Stock

    Century Spring Corp A13-31CS

    COMP O= .360,L= 1.38,W= .034
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey A13-31CS Box 1,945 1
    • 1 $2.65
    • 10 $2.65
    • 100 $2.5138
    • 1000 $1.9845
    • 10000 $1.9845
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    Amphenol Communications Solutions G40HA1331HR

    CONN MINI HD SAS RCPT 36POS R/A
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    DigiKey G40HA1331HR Tray 1,329 1
    • 1 $5.51
    • 10 $5.004
    • 100 $4.40863
    • 1000 $3.19627
    • 10000 $2.97584
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    JRH Electronics G9677A1331NF40

    CONN
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    DigiKey G9677A1331NF40 Bulk 47 1
    • 1 $796.58
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    JRH Electronics G9677A1331M28

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    DigiKey G9677A1331M28 Bulk 46 1
    • 1 $979.38
    • 10 $979.38
    • 100 $979.38
    • 1000 $979.38
    • 10000 $979.38
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    Power Warehouse PWH-A1331

    BATTERY PACK LITH POLY 10.95V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey PWH-A1331 35 1
    • 1 $52.99
    • 10 $50
    • 100 $50
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    Find more A1331 price and stock on Findchips.com

    A1331 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    A1331

    Abstract: No abstract text available
    Text: ECH8410 Ordering number : A1331A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ECH8410 General-Purpose Switching Device Applications Features • • • • Low ON-resistance. 4V drive. Halogen free compliance. Protection diode in Specifications


    Original     		PDF ENA1331A ECH8410 PW10s, 900mm2 011A-002 A1331-7/7 A1331

    SPX5202

    Abstract: 3033 500ma 3033 sot-23-5 SPX3819M5-L-1.8/TR spx3819m5-l-3.3 SPX3819 LM7805 100ma
    Text: SPX3819 500mA, Low-Noise LDO Voltage Regulator FEATURES • ■ ■ ■ ■ ■ ■ Low Noise: 40µV Possible High Accuracy: 1% Reverse Battery Protection Low Dropout: 340mV at Full Load Low Quiescent Current: 90µA Zero Off-Mode Current Fixed Output: 1.2V, 1.5V, 1.8V, 2.5V, 3.0V,


    Original     		PDF SPX3819 500mA, 340mV OT-23, 130C/85 96hrs SPX29150 SPX5202 3033 500ma 3033 sot-23-5 SPX3819M5-L-1.8/TR spx3819m5-l-3.3 SPX3819 LM7805 100ma

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    04NG

    Abstract: DIODE T25 IRFY230 LE17 mosfet 100a 200v
    Text: bOE J> m A1331Û7 GDDOSS4 T2S ISMLB " T 3 ° l- U SENELAB PLC 5EMELAB IRFY230 MECHANICAL DATA Dimensions in mm HERMETICALLY SEALED N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS l.F FEATURES • HERMETIC T0220 METAL OR CERAMIC SURFACE MOUNT PACKAGES • SCREENING OPTIONS AVAILABLE


    OCR Scan     		PDF IRFY230 T0220 T0220M T0220SM 00A//iS 300/us, 04NG DIODE T25 IRFY230 LE17 mosfet 100a 200v

    2N3907

    Abstract: No abstract text available
    Text: 4ÖE D • A1331Ö7 GÜD0437 SEMELABr TbS H S n L B SEflELAB LTD 7^ 27. BI POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY Type Number Rel Code 2N3879 2N3907 2N3919 2N3962 2N3963 2N3964 2N3965 2N3996 2N3997 2N3998 2N3999 2N4000 2N4001 2N4026 2N4027 2N4028


    OCR Scan     		PDF A1331Ã D0437 2N3879 2N3907 2N3919 2N3962 2N3963 2N3964 2N3965 2N3996 2N3907

    Untitled

    Abstract: No abstract text available
    Text: bOE » S P S e a g a te • A1331fl7 0001143 403 ISMLB r-S~8- H3> Microelectronics Limited 1.5 AMP, 3-TERMINAL NEGATIVE REGULATORS IP120A, ÏP12Q, LM120, IP7900A Series, IP7900 Series SEMELAB PLC DESCRIPTION FEATURES The IP120A /IP7900A/IP7900 series of threeterm inal regulators is available with several


    OCR Scan     		PDF A1331fl7 IP120A, LM120, IP7900A IP7900 IP120A /IP7900A/IP7900 IP120,

    Untitled

    Abstract: No abstract text available
    Text: bOE D • A1331Ô7 ODGDSQfl QMS ■ SMLB SEMELAB PLC SEMELAB 'T S V lS BU L48B ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE, HIGH SPEED NPN SILICON POWER TRANSISTOR M E C H A N IC A L D A TA D im ension s in m m • SEMEFAB DESIGNED A N D DIFFUSED • HIGH VOLTAGE VCE>0= 800V


    OCR Scan     		PDF A1331Ã LE174JB

    k 117

    Abstract: k117 BAX65 BCW35 BCY30A BCY31A BCY32A BCY33A T0532 BCY39A
    Text: SENELAB LTD 37E J> m A1331A7 OOODOTfl I SMLB S E M E L A B MANUFACTURING Polarity Package VCEO •c cont Diode Array NPN PNP PNP PNP T077 40 0.3 T018 T018 T 05 T 05 45 45 64 64 0.6 0.6 0.1 0.1 PNP PNP PNP PNP PNP T 05 T 05 T05 T 05 T 05 64 32 32 64 32 0.1


    OCR Scan     		PDF BAX65 BCW34V BCW35/, BCY30A\ BCY31A-/ BCY32A BCY33A BCY34A BCY39A" BCY40A k 117 k117 BCW35 BCY30A BCY31A T0532 BCY39A

    BUW52

    Abstract: LE17
    Text: 37E D S E M E L A B LTD A1331A7 DOODlIt SEMELAB BUW 52 NPN MULTI-EPITAXIAL POWER TRANSISTOR Suitable for high current, high speed, low voltage applications M EC H A N IC A L DATA Dimensions in mm FEATURES . l o w v ce sat • FAST SWITCHING • HIGH CURRENT


    OCR Scan     		PDF c200V BUW52 LE17

    BUW91

    Abstract: 0DG02 LE17
    Text: SENELAB LTD 3 7E J UL 0 6 1988 A1331A7 D 5EMELAB BUW 91 NPN MULTI-EPITAXIAL POWER TRANSISTOR Suitable for designs requiring devices with very low saturation voltage and high gain for reduced load operation M EC H A N IC A L DATA Dim ensionsin mm FEATURES • LOW VCE SAT


    OCR Scan     		PDF 0DG020Ã BUW91 curre27f! 1003C 300ns BUW91 0DG02 LE17

    Untitled

    Abstract: No abstract text available
    Text: SEMELAB LTD A133167 Q00Q02S 1 agMwpEjr 1» nitii "type No. 2N5480 2N5490 2N5491 2N5492 2N5493 2N5494 2N5495 2N5496 2N54 97 2N5498 Reliability Option HI-REL SCREEN Polarity Package VCEO •c cont n "’ 1^iHwwg " j.v'ri;m ifiiirttt hFE@ VCE/*C »T Pd 7 7 7


    OCR Scan     		PDF A133167 Q00Q02S 2N5480 2N5490 2N5491 2N5492 2N5493 2N5494 2N5495 2N5496

    2N372A

    Abstract: 2N3680 2N3809 T072 2N2979DCSM 2N3734 BFX81 T052 2N3501 2N3506
    Text: SEMELAB[ MflE D • A1331B7 DDDDMBb 02 ^ ■ SMLB SEMELAB LTDT»3.7«0l HI-REL BI-POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY Type Number Rei Code 2N3501 2N3506 2N3507 2N3508 2N3509 2N3511 2N3571 2N3583 2N3584 2N3585 2N3634 2N3635 2N3636 2N3637 2N3665


    OCR Scan     		PDF 2N3501 2N3506 2N3507 2N3508 l/10m 2N3509 2N3511 15min 2N3571 2N372A 2N3680 2N3809 T072 2N2979DCSM 2N3734 BFX81 T052

    sml752r4cn

    Abstract: No abstract text available
    Text: bDE D SEMELAB PLC A1331Ô7 OOGDfiEb ÛG3 MSIILB IN I = ^ = SEME m i SML802R4CN SML752R4CN SML802R8CN SML752R8CN LAB 800V 750V 800V 750V 2.4012 2.40Í2 2.8012 2.80Í2 4.5A 4.5A 4.0A 4.0A N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS


    OCR Scan     		PDF A1331 SML802R4CN SML752R4CN SML802R8CN SML752R8CN 752R4CN 802R4CN 752R8GCN 802R8CN 12802R8C

    Untitled

    Abstract: No abstract text available
    Text: Reliability Polarity Option TVpe No. A1331A7 O Q O O O m 37E D SEMELAB LTD Package v CEO <C eont hF E @ v CE/fC »T Pd 2N2817 2N2818 2N2819 2N2820 2N2821 HI-REL HI-REL HI-REL HI-REL HI-REL NPN NPN NPN NPN NPN T063 T063 T063 T063 T063 150 200 80 100 150 20


    OCR Scan     		PDF A1331A7 2N2817 2N2818 2N2819 2N2820 2N2821 2N2822 2N2823 2N2824 2N2825

    Untitled

    Abstract: No abstract text available
    Text: 3 7E SEMELAB LTD » • A1331A7 000DQ24 S ISMLB se&m type No. Reliability Polarity Option Package vCEO ■c cont hFE@ VCE/'C 'T PD 2N5861 2N5864 2N5865 2N5867 2N5868 SCREEN HI-REL HI-REL SCREEN SCREEN NPN PNP PNP PNP PNP T039 T039 T039 TO 3 TO 3 100 70 50


    OCR Scan     		PDF A1331A7 000DQ24 2N5861 2N5864 2N5865 2N5867 2N5868 2N5869 2N5870 2N5871

    BUV18

    Abstract: chip die npn transistor BUW38 G936A BUV51 G636A BUW51 G336A BUP46 BUP55
    Text: MflE D A1331S7 D D D 0 4 n TMT SEMEFABF SEMELAB LTD W- \-3>5-D7 The G136 chip family is an NPN bipolar multi-epitaxial planar transistor intended for applications requiring fast switching, low saturation, high power robust devices. • UP TO 55 AMPS • UP TO 6 5 0 VOLTS VCBO


    OCR Scan     		PDF A1331S7 G536A G636A G736A G336A G436A BUV51 BUW51 BUW61 G236A BUV18 chip die npn transistor BUW38 G936A BUP46 BUP55

    c3807

    Abstract: C3898 k443 d16810 K545 K1311 b1127 C4146 K2073 B986
    Text: sa H yo ^ Qui c = V < S ö 1ect 1on Gu 1de S P A \ v \ ÇE0 i cx v m A )\ 1 1 0 2 0 1 5 1 8 5 0 K7 1 5 K2 0 7 4 K2 3 9 5 2 5 K1 5 7 8 K212 K3 1 5 K4 0 4 K4 2 7 K444 K2270 3 0 2 0 C4 4 3 3 5 7 0 0 8 0 0 A1765 C4 4 5 4 B8 0 8 D10 12 B12 9 6 D19 3 6 3 0 K3 0 4


    OCR Scan     		PDF K2270 A1765 A1497/C3860, A1503/C3864 A1509/C3899, A1511/C3901 A1572/ A1574/C4070 A1582/C4113, A1590/C4121 c3807 C3898 k443 d16810 K545 K1311 b1127 C4146 K2073 B986

    Sot-220

    Abstract: 1121t B1331 BUP42 LE17 npn 10a 800v a1023 S7100
    Text: 3 7E SEMELAB LTD D • B1331A7 ■ G00015S SEMELAB -1 X \ BUP 42 SILICON NPN EPITAXIAL PLANAR MECHANICAL DATA Dimensions in mm 10.3 max. 3.6 p. è L|. « I I 1.3 r 15.8 ¿.5max FEATURES 5 .9 • HIGH BREAKDOWN VOLTAGE min. • HIGH RELIABILITY max. • WIDE AREA OF SAFE OPERATION


    OCR Scan     		PDF B1331Ã GQ001SS 55to150Â BUP42 Sot-220 1121t B1331 BUP42 LE17 npn 10a 800v a1023 S7100

    BUP34

    Abstract: LE17 900Volts
    Text: SEMELAB LTD 3?E J> m 0133107 Q00Q13M SEP/ÏELAB JUÜ 'Ì 9 >937 3 /VJ3 'y ^ '\ BUP34 NEW PRODUCT SILIC O N N PN MECHANICAL DATA EPITAXIAL PLANAR 10.3. max. 1.3 3.6 2.8 ¿.5max. b-/txx ¥ 5.9 w min. FEATURES 15.8 max. • Very high breakdown voltage L}_. • Low Cob


    OCR Scan     		PDF G00013M BUP34 O-220 100Voltsf 33-oi LE17 900Volts

    XAPP031

    Abstract: No abstract text available
    Text: £ XILINX XC4000E and XC4000X Series Field Programmable Gate Arrays November 10,1997 Version 1.4 Product Specification XC4000E and XC4000X Series Features Low-Voltage Versions Available Note: XC4000 Series devices described in this data sheet include the XC4000E family and XC4000X Series.


    OCR Scan     		PDF XC4000E XC4000X XC4000 XC4000EX XC4000XL XAPP031

    Untitled

    Abstract: No abstract text available
    Text: im ittl mi SEME IRFN150 LAB MECHANICAL DATA Dimensions in mm inches N-CHANNEL POWER MOSFET 11.5 2.0 k 3.5 ► i 1 3.5 1 3 ^D(cont) 3.0 R DS(on) ii r FEATURES i • HERMETICALLY SEALED SURFACE MOUNT PACKAGE o o> r 100V 19A 0.070Q V DSS 0.25 • SMALL FOOTPRINT - EFFICIENT USE OF


    OCR Scan     		PDF IRFN150 -220SM 300ms, A1331A7

    Untitled

    Abstract: No abstract text available
    Text: im m = nil SEME IRFN250 LAB MECHANICAL DATA Dimensions in mm inches N-CHANNEL POWER MOSFET 11.5 2.0 3.5 3.5 200V V Dss 0.25 14A 0.1 OOO ^D(cont) 3.0 ^DS(on) i5 FEATURES • HERMETICALLY SEALED SURFACE MOUNT PACKAGE • SMALL FOOTPRINT - EFFICIENT USE OF


    OCR Scan     		PDF IRFN250 220SM 00A/M-S 300ms, A1331B7 000151b

    1N5438

    Abstract: tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175
    Text: The Semiconductor DataBook This is the first supplement to the 4th Edition o f the Semiconductor Data Book originally published in July 1969. It is produced to keep an up-to-date listing o f the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers introduced after the publi­


    OCR Scan     		PDF 27TfC 1N5438 tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175

    BFM34

    Abstract: 100WF
    Text: nu itnut i SEME BFM34 LAB MECHANICAL DATA TetraFET 100W - 28V - 900MHz DIM A B C D E F G H 1 J K M N O P ELECTRICAL CHARACTERISTICS Parameter PER SIDE Drain-Source B Vncc Zero Gate Voltage Drain Current Iq SS Gate Leakage Current Toi. 0.50 0.13 5° 0.13 0.13


    OCR Scan     		PDF BFM34 900MHz 100mA 900MHz A133167 BFM34 100WF