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    2N1711 TI Datasheets Context Search

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    2n1711

    Abstract: equivalent transistor 2N1711 2N1890 2N1711 Data Sheet equivalents transistor 2n1711 MIL-PRF-19500/225 transistor 2n1890
    Text: TECHNICAL DATA NPN LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/225 Devices Qualified Level 2N1711 JAN JANTX 2N1890 MAXIMUM RATINGS Ratings Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Symbol 2N1711 2N1890


    Original     		PDF MIL-PRF-19500/225 2N1711 2N1890 2N1711, 2N1890, MIL-PRF-19500/225) 2n1711 equivalent transistor 2N1711 2N1890 2N1711 Data Sheet equivalents transistor 2n1711 MIL-PRF-19500/225 transistor 2n1890

    Untitled

    Abstract: No abstract text available
    Text: rm. 20 STERN AVE. SPRINGFIELD. NEW JERSEY 07081 U.SA DESCRIPTION 2N1613 2N1711 2N1893 TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-6960 NPN Silicon Transistor JEDEC TO-39 case 2N1613, 2N1711, and 2N1893 are S i l i c o n NPN Planar Epitaxial Transistors designed for small signal general purpose and switching applications.


    Original     		PDF 2N1613 2N1711 2N1893 2N1613, 2N1711, 2N1893 2N17H Ic-500mA 300uA,

    2N1711 MOTOROLA

    Abstract: 2N1711 transistor 2n1711 2N1711 M 2N1711D "2N1711"
    Text: MOTOROLA Order this document by 2N1711/D SEMICONDUCTOR TECHNICAL DATA General Purpose Transistor NPN Silicon 2N1711 COLLECTOR 3 2 BASE 1 EMITTER ARCHIVE INFORMATION Rating Symbol Value Unit Collector – Emitter Voltage VCER 50 Vdc Collector – Base Voltage


    Original     		PDF 2N1711/D 2N1711 2N1711/D* 2N1711 MOTOROLA 2N1711 transistor 2n1711 2N1711 M 2N1711D "2N1711"

    2n1711

    Abstract: transistor 2n1711 equivalent transistor 2N1711 2N1890 2N1711 Data Sheet
    Text: TECHNICAL DATA 2N1711 JAN, JTX 2N1890 JAN, JTX MIL-PRF QML DEVICES Processed per MIL-PRF-19500/225 NPN LOW-POWER SILICON TRANSISTORS MAXIMUM RATINGS Ratings Symbol 2N1711 2N1890 Units VCEB VCBO VEBO IC PT 50 75 80 100 Vdc Vdc Vdc mAdc W W Collector-Emitter Voltage


    Original     		PDF 2N1711 2N1890 MIL-PRF-19500/225 2N1711 2N1890 N1890 transistor 2n1711 equivalent transistor 2N1711 2N1711 Data Sheet

    Diode 400V 5A

    Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
    Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM


    Original     		PDF 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 Diode 400V 5A lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN

    2n1711

    Abstract: No abstract text available
    Text: TECHNICAL DATA NPN LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/ 225 Qualified Level Devices 2N1711 JAN JANTX 2N1890 MAXIMUM RATINGS Ratings Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = +250C 1


    Original     		PDF MIL-PRF-19500/ 2N1711 2N1890 2N1711, 2N1890, MIL-PRF-19500/225) 2n1711

    TRANSISTOR DATASHEET D1555

    Abstract: d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878
    Text: 型号 2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 2N2166 2N2219A 2N2222A 2N2223 2N2223A 2N2243A 2N2369A 2N2857 2N2894 2N2905A 2N2906A 2N2907A 2N2917 2N2926 2N2955 2N3019 2N3053 2N3054 2N3055 2N3055 2N3055H 2N3251 2N3375 2N3439 2N3440


    Original     		PDF 2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 TRANSISTOR DATASHEET D1555 d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878

    2N1711

    Abstract: No abstract text available
    Text: , Una. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Devices 2N1711 2N1890 MAXIMUM RATINGS Ratings Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation ia> TA = +25°C (1)


    Original     		PDF 2N1711 2N1890 2N1711, 2N1890, 2N17U, 2N1711

    Untitled

    Abstract: No abstract text available
    Text: 2N1711 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 50V 0.41 (0.016) 0.53 (0.021)


    Original     		PDF 2N1711 O205AD) 19-Jun-02

    2N1711

    Abstract: No abstract text available
    Text: 2N1711 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 50V 0.41 (0.016) 0.53 (0.021)


    Original     		PDF 2N1711 O205AD) 17-Jul-02 2N1711

    2N1711

    Abstract: 2N1890 equivalent transistor 2N1711 transistor 2N1711 2N171-1 MIL-PRF-19500/225
    Text: TECHNICAL DATA NPN LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/225 Devices Qualified Level 2N1711 JAN JANTX 2N1890 MAXIMUM RATINGS Ratings Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = +250C 1 @ TC = +250C (2)


    Original     		PDF MIL-PRF-19500/225 2N1711 2N1890 2N1711, 2N1890, MIL-PRF-19500/225) 2N1711 2N1890 equivalent transistor 2N1711 transistor 2N1711 2N171-1 MIL-PRF-19500/225

    MIL-S-19500

    Abstract: 2902n TRANSISTOR 2n697 2N3700 DIE MIL-S-19500 FOR POWER LINE TRANSISTOR 2N497 2N497 JAN 2n2222 jan 2N657 2N910 JAN
    Text: Winter 1997-1998 Microsemi's Watertown division received QPL Status on the following transistor part types in August 1997. PART TYPE 2N497 & S 2N498 & S 2N656 & S 2N657 & S 2N696 & S 2N697 & S 2N1131 & L 2N1132 & L 2N718A 2N1613 & L 2N720A 2N1893 & S 2N1711 & S


    Original     		PDF 2N497 2N498 2N656 2N657 2N696 2N697 2N1131 2N1132 2N718A 2N1613 MIL-S-19500 2902n TRANSISTOR 2n697 2N3700 DIE MIL-S-19500 FOR POWER LINE TRANSISTOR 2N497 2N497 JAN 2n2222 jan 2N657 2N910 JAN

    2N1711

    Abstract: No abstract text available
    Text: 2N1711 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 50V 0.41 (0.016) 0.53 (0.021)


    Original     		PDF 2N1711 O205AD) 1-Aug-02 2N1711

    FN1016

    Abstract: 2sC9012 on4409 on4673 ON4843 C9012 S2000A3 bul310xi 2SD5080 MN1016
    Text: ТРАНЗИСТОРЫ БИПОЛЯРНЫЕ ИМПОРТНЫЕ Наименование 2N1112 2N1212 2N1217 2N1711 2N2219A 2N2222 Metal 2N2222A 2N2222Aмет 2N2369 2N2369A 2N2646 2N2905A 2N2905Aпластик 2N2907 2N2907(Metal) 2N3055 2N3055 2N3440 2N3773


    Original     		PDF 2N1112 2N1212 2N1217 2N1711 2N2219A 2N2222 2N2222A 2N2369 2N2369A FN1016 2sC9012 on4409 on4673 ON4843 C9012 S2000A3 bul310xi 2SD5080 MN1016

    equivalent transistor 2N1711

    Abstract: 2N1711 transistor 2n1711 2N1711S 2N1890 2N1890S 2N1711S JAN
    Text: INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be completed by 6 October 2007. MIL-PRF-19500/225J 6 July 2007 SUPERSEDING MIL-PRF-19500/225H 25 July 2006 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON,


    Original     		PDF MIL-PRF-19500/225J MIL-PRF-19500/225H 2N1711, 2N1711S, 2N1890, 2N1890S, MIL-PRF-19500. equivalent transistor 2N1711 2N1711 transistor 2n1711 2N1711S 2N1890 2N1890S 2N1711S JAN

    transistor npn double

    Abstract: TO-39 CASE to ambient 2N1711 D73 transistor
    Text: N AUER PHILIPS/DISCRETE b^E T> • bbS3*131 GD2ÔD73 275 2N1711 SILICON PLANAR TRANSISTOR N-P-N double diffused transistor in a TO-39 metal envelope designed fora wide variety of applications such as d.c. and wideband amplifiers. QUICK REFERENCE DATA Collector-base voltage open emitter


    OCR Scan     		PDF 2N1711 7Z593220 bb53T31 002007b transistor npn double TO-39 CASE to ambient 2N1711 D73 transistor

    Untitled

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE bRE D APX bbSB'iai 0 0 2 S 0 7 3 272 2N1711 SILICON PLANAR TRANSISTOR N-P-N double diffused transistor inaTO-39 metal envelope designed for a wide variety of applications such as d.c. and wideband amplifiers. QUICK REFERENCE DATA Collector-base voltage open emitter


    OCR Scan     		PDF 2N1711 inaTO-39

    2N1711

    Abstract: 2N1893 2N3019 2N718A
    Text: Boca Semiconductor Corp. 2N1711 For Specifications, See 2N718A Data. M A X IM U M R ATINGS Rating Symbol Value Unit C o lle ctor-E m itter Voltage VCEO 80 Vdc C o lle ctor-E m itter Voltage V CER 100 Vdc Collector-Base Voltage v CBO 120 Vdc Em itter-Base Voltage


    OCR Scan     		PDF 2N1711 2N718A 2N1711 2N1893 2N3019

    pj 899

    Abstract: No abstract text available
    Text: T im es ? 2N1711* *also available a: JAN, JANTX, JANTXV SILICON SMALL-SIGNAL NPN TRANSISTORS NPN GENERAL PURPOSE TRANSISTOR HIGH FREQUENCY HIGH CURRENT GAIN @ 1 5 0 mA LOW SATURATION VOLTAGE TO-39 TO-205AD M A X IM U M R A T IN G S SY M BO L 2N 1711 U N IT S


    OCR Scan     		PDF 2N1711* O-205AD 794-1BBB pj 899

    2N2389

    Abstract: 2N2390 2N1711 Texas Instruments TI424
    Text: TYPES 2N2389, 2N2390 N-P-N SILICON TRANSISTORS B U L L E T I N N O . D L -S 6 4 6 0 2 7 , O C T O B E R 1 9 6 4 FOR GENERAL PURPOSE AMPLIFIER AND SWITCHING APPLICATIONS FROM <0.1 ma to >150 mo, dc to 30 Me Formerly TI424 and TI425 * Electrically Similar to 2N1613 and 2N1711


    OCR Scan     		PDF 2N2389, 2N2390 TI424 TI425 2N1613 2N1711 2N2389 2N1711 Texas Instruments

    MPS3388

    Abstract: 2N3783 MPSS172 A5T3904 SDMFL 2N1711 2N1893 2N3704 pn4227 MPS3704
    Text: s L MICRODEVICES INC ~ 14 D lF | s D 4 f lû 3 b OODDDTÛ b ^ ~ D GENERAL PURPOSE AMPLIFIERS AND MEDIUM-SPEED SWITCHES TYPE 2N1711 CASE STYLE BVc b o bvCEO b v eb o 'CBO Min Min Min Max 75V .5 0 VI 7V 10nA @ 1 20 V 80 V 7V T05 VCB 9 60 V 20 35 75 100-300 40


    OCR Scan     		PDF 2N1711 PN1711 10mA/10V 150mA 2N1893 PN1693 10mA/10 PN3566 MPS3388 2N3783 MPSS172 A5T3904 SDMFL 2N3704 pn4227 MPS3704

    2N718

    Abstract: SA37T 2N696 2N717 2N1711 2n697 2N1613 2N956 2N731 2NI613
    Text: TYPES 2N696, 2N697. 2N717. 2N718. 2N718A, 2N730, 2N731, 2N956, ZUmO, 2N150J. 2N1613. 2N1711 N-P-N SILICON TRANSISTORS B U L L E T IN N O . D L -S 6 9 3 4 7 1 , M A Y 1 9 6 3 - R E V I S E D A U G U S T 1 9 6 9 Highly Reliable, Versatile Devices Designed for


    OCR Scan     		PDF 2N696, 2N697. 2N717. 2N718. 2N718A, 2N730, 2N731, 2N956, 2N150J. 2N1613. 2N718 SA37T 2N696 2N717 2N1711 2n697 2N1613 2N956 2N731 2NI613

    2N1711

    Abstract: 2N956 2N718A X10-4 2N1711N
    Text: 2N718A 2N956 M A X IM U M R ATINGS Rating Symbol 2N718A 2N956 2N1711 CASE 22-03, STYLE 1 TO-18 TO-206AA Unit C o lie ctor-E m itter V o ltage VCER 50 Vdc Collector-Base V o ltage v CBO 75 Vdc E m itter-Base Voltage Ve bo 7.0 3 , 3 C o lle c to r Vdc Total Device D issipation @ TA = 25°C


    OCR Scan     		PDF 2N718A 2N956 2N1711 2N956 O-206AA) 2N1711 X10-4 2N1711N

    transistor 2n1711

    Abstract: No abstract text available
    Text: 2N1711 F or S p e c ific a tio n s. S ee 2 N 7 1 8 A D ata. 2N1893 MAXIMUM RATINGS R ating S ym b o l V alu e U n it C o lle c to r-E m itte r V o tta g e v CEO 80 Vdc C o lle c to r-E m itte r V o lta g e VCER 100 Vdc C o lle c to r-B a s e V o lta g e v CBO


    OCR Scan     		PDF 2N1711 2N1893 O-205AD) transistor 2n1711