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    2N3019 Price and Stock

    Microchip Technology Inc JANS2N3019

    TRANS NPN 80V 1A TO5
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    DigiKey JANS2N3019 Bulk 933 1
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    Microchip Technology Inc 2N3019

    TRANS NPN 80V 1A TO5
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    Microchip Technology Inc 2N3019 1
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    Microchip Technology Inc 2N3019S

    TRANS NPN 80V 1A TO39
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    DigiKey 2N3019S Bulk 79 1
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    Central Semiconductor Corp CP305-2N3019-CT20

    TRANS NPN 80V 1A DIE 1=20PCS
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    DigiKey CP305-2N3019-CT20 Tray 25 1
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    STMicroelectronics 2N3019

    TRANS NPN 80V 1A TO39
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    Component Electronics, Inc 2N3019 256
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    Find more 2N3019 price and stock on Findchips.com

    2N3019 Datasheets (112)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N3019 Central Semiconductor Small Signal Transistors Original PDF
    2N3019 Continental Device India Npn Silicon Planar Epitaxial Transistors Original PDF
    2N3019 Microsemi Low Power NPN Silicon Transistor Original PDF
    2N3019 Microsemi Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN 80V 1A TO-5 Original PDF
    2N3019 Motorola Bipolar Transistor, General Transistors NPN Silicon - Pol=NPN / Pkg=TO39 / Vceo=80 / Ic=1 / Hfe=80min / fT(Hz)=100M / Pwr(W)=0.8 Original PDF
    2N3019 On Semiconductor 2N3019 - TRANSISTOR 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-5, BIP General Purpose Small Signal Original PDF
    2N3019 Philips Semiconductors NPN medium power transistor - Pol=NPN / Pkg=TO39 / Vceo=80 / Ic=1 / Hfe=80min / fT(Hz)=100M / Pwr(W)=0.8 Original PDF
    2N3019 Philips Semiconductors Small-signal Transistors Original PDF
    2N3019 Semelab BJT, NPN, Silicon Transistor, IC 1A - Pol=NPN / Pkg=TO39 / Vceo=80 / Ic=1 / Hfe=80min / fT(Hz)=100M / Pwr(W)=0.8 Original PDF
    2N3019 Semelab NPN Silicon Transistor - Pol=NPN / Pkg=TO39 / Vceo=80 / Ic=1 / Hfe=80min / fT(Hz)=100M / Pwr(W)=0.8 Original PDF
    2N3019 Semico Type 2N3019 Geometry 4500 Polarity NPN - Pol=NPN / Pkg=TO39 / Vceo=80 / Ic=1 / Hfe=80min / fT(Hz)=100M / Pwr(W)=0.8 Original PDF
    2N3019 Semico Chip: geometry 4500 polarity PNP - Pol=NPN / Pkg=TO39 / Vceo=80 / Ic=1 / Hfe=80min / fT(Hz)=100M / Pwr(W)=0.8 Original PDF
    2N3019 Semico Chip: 7.0V geometry 4500 polarity NPN - Pol=NPN / Pkg=TO39 / Vceo=80 / Ic=1 / Hfe=80min / fT(Hz)=100M / Pwr(W)=0.8 Original PDF
    2N3019 Siemens Cross Reference Guide 1998 Original PDF
    2N3019 STMicroelectronics HIGH CURRENT, HIGH FREQUENCY AMPLIFIERS - Pol=NPN / Pkg=TO39 / Vceo=80 / Ic=1 / Hfe=80min / fT(Hz)=100M / Pwr(W)=0.8 Original PDF
    2N3019 STMicroelectronics TRANS GP BJT NPN 80V 1A 3TO-39 - Pol=NPN / Pkg=TO39 / Vceo=80 / Ic=1 / Hfe=80min / fT(Hz)=100M / Pwr(W)=0.8 Original PDF
    2N3019 Advanced Semiconductor Silicon Transistor Selection Guide Scan PDF
    2N3019 Boca Semiconductor GENERAL TRANSISTOR NPN SILICON - Pol=NPN / Pkg=TO39 / Vceo=80 / Ic=1 / Hfe=80min / fT(Hz)=100M / Pwr(W)=0.8 Scan PDF
    2N3019 Central Semiconductor NPN METAL CAN - SWITCHING AND GENERAL PURPOSE Scan PDF
    2N3019 Continental Device India Semiconductor Device Data Book 1996 Scan PDF

    2N3019 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N3019

    Abstract: JAN2N3700 2N3019S 2N3019S JAN
    Text: 2N3019, 2N3019S, 2N3700 Low Power Transistors NPN Silicon Features • MIL−PRF−19500/391 Qualified • Available as JAN, JANTX, and JANTXV http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS TA = 25°C unless otherwise noted Characteristic Symbol Value Unit


    Original     		PDF 2N3019, 2N3019S, 2N3700 MIL-PRF-19500/391 2N3019S 2N3019 JAN2N3700 2N3019S JAN

    2N3019

    Abstract: 2N3019J 2N3019JS 2N3019JV 2N3019JX 2N3019 DIE
    Text: 2N3019 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N3019J • JANTX level (2N3019JX)


    Original     		PDF 2N3019 MIL-PRF-19500 2N3019J) 2N3019JX) 2N3019JV) 2N3019JS) MIL-STD-750 MIL-PRF-19500/391 2N3019 2N3019J 2N3019JS 2N3019JV 2N3019JX 2N3019 DIE

    2N3019RB

    Abstract: No abstract text available
    Text: 2N3019RB Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 80V 0.41 (0.016)


    Original     		PDF 2N3019RB O205AD) 1-Aug-02 2N3019RB

    power transistor 2n3020

    Abstract: 2N3019 and applications
    Text: 2N3019 2N3020 NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3019, 2N3020 types are NPN silicon transistors designed for general purpose amplifier applications. MARKING: FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS: TA=25°C


    Original     		PDF 2N3019 2N3020 2N3019, 150mA, 150mA 500mA 20MHz power transistor 2n3020 2N3019 and applications

    JANSL 2N3019S

    Abstract: JANS2N3700UB 2n3019 equivalent
    Text: 2N3019 and 2N3019S Qualified Levels: JANSM, JANSD, JANSP, JANSL, and JANSR RADIATION HARDENED LOW POWER NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/391 DESCRIPTION This RHA level 2N3019 and 2N3019S NPN leaded metal device is RAD hard qualified for


    Original     		PDF 2N3019 2N3019S MIL-PRF-19500/391 2N3019S 2N3019. O-205AD) T4-LDS-0098, JANSL 2N3019S JANS2N3700UB 2n3019 equivalent

    2N3019A

    Abstract: 2N3019HR 15384 st marking code
    Text: 2N3019HR Hi-Rel NPN bipolar transistor 80 V - 1 A Features BVCEO 80 V IC max 1A HFE at 10 V - 150 mA > 100 Operating temperature range -65°C to +200°C • Hi-Rel NPN bipolar transistor ■ Linear gain characteristics ■ ESCC qualified ■ European preferred part list - EPPL


    Original     		PDF 2N3019HR 2N3019AHR 2N3019A 2N3019HR 15384 st marking code

    2N3019 motorola

    Abstract: 2N3700 MOTOROLA motorola 2N3019 2N3019 2N3700 MOTOROLA TO205AD
    Text: MOTOROLA Order this document by 2N3019/D SEMICONDUCTOR TECHNICAL DATA General Transistors COLLECTOR 3 LAST SHIP 21/03/00 2N3019 2N3700 NPN Silicon Motorola Preferred Devices 2 BASE 1 EMITTER MAXIMUM RATINGS 2N3019 2N3700 Unit VCEO 80 80 Vdc Collector – Base Voltage


    Original     		PDF 2N3019/D 2N3019 2N3700 2N3019/D* 2N3019 motorola 2N3700 MOTOROLA motorola 2N3019 2N3019 2N3700 MOTOROLA TO205AD

    2N3019

    Abstract: No abstract text available
    Text: 2N3019, 2N3019S, 2N3700 Low Power Transistors NPN Silicon Features • MIL−PRF−19500/391 Qualified • Available as JAN, JANTX, and JANTXV http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS TA = 25°C unless otherwise noted Characteristic Symbol Value Unit


    Original     		PDF 2N3019, 2N3019S, 2N3700 2N3019S 2N3019/D 2N3019

    Untitled

    Abstract: No abstract text available
    Text: 2N3019 NPN SILICON TRANSISTOR MECHANICAL DATA Dimensions in mm inches 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) FEATURES • NPN High Voltage Planar Transistor 4.19 (0.165) 4.95 (0.195) • Hermetic TO39 Package 12.70 (0.500) min. 0.89 max. (0.035)


    Original     		PDF 2N3019 20MHz 100mA

    2N3019 and applications

    Abstract: 2N3019S 2n3019 JANTX2N3700 jantx2n3019
    Text: 2N3019, 2N3019S, 2N3700 Low Power Transistors NPN Silicon Features • MIL−PRF−19500/391 Qualified • Available as JAN, JANTX, and JANTXV http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS TA = 25°C unless otherwise noted Characteristic Symbol Value Unit


    Original     		PDF 2N3019, 2N3019S, 2N3700 MIL-PRF-19500/391 2N3019S 2N3019 and applications 2n3019 JANTX2N3700 jantx2n3019

    Untitled

    Abstract: No abstract text available
    Text: NPN SILICON TRANSISTOR 2N3019CSM • High Voltage, High Current Small Signal NPN Transistor. • Hermetic Ceramic Surface Mount Package. • Ideally Suited For General Purpose Amplifier and High Speed Switching Applications. • Screening Options Available


    Original     		PDF 2N3019CSM 500mW 86mW/Â

    Untitled

    Abstract: No abstract text available
    Text: 2N3019S Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N3019SJ • JANTX level (2N3019SJX)


    Original     		PDF 2N3019S MIL-PRF-19500 2N3019SJ) 2N3019SJX) 2N3019SJV) 2N3019SJS) MIL-STD-750 MIL-PRF-19500/391

    2N3019S

    Abstract: 2N3019
    Text: Data Sheet No. 2N3019S Generic Part Number: 2N3019 Type 2N3019S Geometry 4500 Polarity NPN Qual Level: JAN - JANS REF: MIL-PRF-19500/391 Features: • • • • • General-purpose transistor for switching and amplifier applicatons. Housed in a TO-39 case.


    Original     		PDF 2N3019S 2N3019 MIL-PRF-19500/391 MIL-PRF-19500/391 2N3019S 2N3019

    2N3019S

    Abstract: 2N3019SJ 2N3019SJS 2N3019SJV 2N3019SJX
    Text: 2N3019S Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N3019SJ • JANTX level (2N3019SJX)


    Original     		PDF 2N3019S MIL-PRF-19500 2N3019SJ) 2N3019SJX) 2N3019SJV) 2N3019SJS) MIL-STD-750 MIL-PRF-19500/391 2N3019S 2N3019SJ 2N3019SJS 2N3019SJV 2N3019SJX

    Untitled

    Abstract: No abstract text available
    Text: m 2N3019 \ \ SILICON NPN TRANSISTOR DESCRIPTION: The 2N3019 is Designed for General Purpose Amplifier and Switching Applications. MAXIMUM RATINGS 1.0 A lc V 80 V ce 5.0 W @ Tc = 25 °C P diss Tj -65 °C to +200 °C T -65 °C to +200 °C stg 16.5 °C/W 0JC


    OCR Scan     		PDF 2N3019 2N3019

    Untitled

    Abstract: No abstract text available
    Text: ¡J8BBBBB88& p |M iwiHBBffi sm ssssP e .rfHHHHHHHHMh. itittnnnnn hhhhhhk-. loniftBHhr. 1m1 IIr ^888o 88% #f 1 l Data S heet No. 2N 3019 $ sdL SEMICONDUCTORS G eneric Part Num ber: 2N3019 Type 2N3019 G eom etry 4500 Polarity NPN Qual Level: J A N -J A N S REF: M IL-P R F -19500/391


    OCR Scan     		PDF J8BBBBB88& 2N3019 MiL-PRF-19500/391

    Untitled

    Abstract: No abstract text available
    Text: ID I 2N3019CSM SEME LAB HIGH FREQUENCY, NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES 0 5 1 ± 0.10 (0.02 ± 0.004) 0.31 -^/(0012i • SILICON PLANAR EPITAXIAL NPN


    OCR Scan     		PDF 2N3019CSM 0012i 20MHz 00015flfl

    TA550c

    Abstract: 2N4033 2N3019 and applications TA-550C 2N5020 2N3019 2N3020 2N4031 550C
    Text: 2N3019 2N 3020 NPN SILICON AP MEDIUM POWER AMPLIFIERS & SWITCHES ' * •\ • * ’ * V •’ , ¿: u \ r> r 1 ¿ 7 . j * * V / • •' ¿ r . .* i f ^ C M i ? > % - ' l,- - • , • • . i * Í ;•: i Í ■ sir4 : 1 1' ; : ; > * ?• K v y i : r ^ V ; y . ‘£


    OCR Scan     		PDF 2N3019 2N3020 2N3019, 2N5020 2N4033, 2N4031. IC-150mA 150mA VCE-10V 500mA TA550c 2N4033 2N3019 and applications TA-550C 2N4031 550C

    2N3053

    Abstract: 2N3019 2N3700 2N3020 2N3019 MOTOROLA motorola 2N3020 test 2N3700 2N3053 motorola 2N3053A 336 motorola
    Text: 2N3019* 2N3020 M A X IM U M R A T IN G S Symbol 2N3019 2N3020 2N3700 Unit Collector-Emitter Voltage VCEO 80 80 Vdc Collector-Base Voltage VCBO 140 140 Vdc Rating Emitter-Base Voltage CA SE 79-04, STYLE 1 TO-39 TO-205AD V e BO 7.0 7.0 Vdc Collector Current — Continuous


    OCR Scan     		PDF 2N3019 2N3020 2N3700 2N3020 2N3700 2N3019* O-205AD) 2N3053 2N3019 MOTOROLA motorola 2N3020 test 2N3700 2N3053 motorola 2N3053A 336 motorola

    2n3019a

    Abstract: 2n3019
    Text: 2N3019 2N3020 Z A PHILIPS INTERNATIONAL 5bE D m 711GöSb DG42b4G 31e] HPHIN 7 = 3 5 "-/< ? SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in TO-39 metal envelopes intended fo r use as amplifiers and in switching circuits. Q UICK REFERENCE D A T A Collector-base voltage open em itter


    OCR Scan     		PDF 2N3019 2N3020 DG42b4G 2n3019a

    2N2222 - to-92

    Abstract: 2N2222A TO-92 JC547 2n2222 to92 2N2222 2N3904 TO-92 type JC500, Jc501
    Text: Small Signal Leaded Devices General Purpose and Sw itching Transistors - NPN Types bvceo •c c 3 hFE lc Type Pkg (V (mA) min max (mA) 2N1613 2N1711 2N1893 2N2219 2N2219A 2N2222 2N2222A 2N2297 2N2368 2N2369 2N2369A 2N3019 2N3020 2N3053 2N3904 2N4123 2N4124


    OCR Scan     		PDF 2N1613 2N1711 2N1893 2N2219 2N2219A 2N2222 2N2222A 2N2297 2N2368 2N2369 2N2222 - to-92 2N2222A TO-92 JC547 2n2222 to92 2N3904 TO-92 type JC500, Jc501

    Untitled

    Abstract: No abstract text available
    Text: 3QE D • 7^237 0031153 G T * 3s - is SGS-THOMSON [MOÛiiô&iOTlIRMOÛS 2N3019 2N3020 S G S-THOMSON HIGH CURRENT, HIGH FREQUENCY AMPLIFIERS DESCRIPTIO N The 2N3019 and 2N3020 are silicon planar epitax­ ial NPN transistors in Jedec TO-39 metal case, de­ signed for high-current, high-frequency amplifier


    OCR Scan     		PDF 2N3019 2N3020 2N3019 2N3020

    2n3019 equivalent

    Abstract: 2N3053 equivalent BC140 equivalent BC141 equivalent 2n930 equivalent bcy59 equivalent BC107 equivalent transistors 2N328A BC109C NPN bcy31
    Text: Discrete Devices Transistors Cont. General Purpose Amplifiers (Cont.) Electrical Characteristics @ 25° C Maximum Ratings Type Polarity PD Ambient mW 2N2897 NPN 2N2898 NPN NPN 2N2899 2N2900 2N3019 2N3020 2 N 3036 2N3053 NPN NPN NPN NPN NPN VCB Volts VCE


    OCR Scan     		PDF 2N2897 2N2898 2N2899 2N2900 2N3019 2N3020 2N3036 2N3053 2N329A BCY56 2n3019 equivalent 2N3053 equivalent BC140 equivalent BC141 equivalent 2n930 equivalent bcy59 equivalent BC107 equivalent transistors 2N328A BC109C NPN bcy31

    Untitled

    Abstract: No abstract text available
    Text: 2N3019 2N 3020 _ SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in TO-39 metal packages intended fo r use as amplifiers and in switching circuits. QUICK REFERENCE DATA Co I lector-base voltage open emitter


    OCR Scan     		PDF 2N3019 2N3020