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    2SB937A Search Results

    2SB937A Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SB937A Panasonic Silicon PNP epitaxial planar type Darlington Original PDF
    2SB937A) Panasonic PNP Transistor Darlington Original PDF
    2SB937A Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SB937A Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB937A Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB937A Unknown Cross Reference Datasheet Scan PDF
    2SB937A Panasonic Si PNP epitaxial planar darlington. AF power amplifier. Scan PDF
    2SB937AP Panasonic Si PNP EPITAXIAL PLANAR Scan PDF
    2SB937AQ Panasonic Si PNP EPITAXIAL PLANAR Scan PDF
    2SB937AR Panasonic Si PNP EPITAXIAL PLANAR Scan PDF

    2SB937A Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2SB937

    Abstract: 2SB937A 2SD1260 2SD1260A
    Text: Power Transistors 2SD1260, 2SD1260A Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB937 and 2SB937A Unit: mm VCEO 10.0±0.3 V 80 VEBO 5 V Peak collector current ICP 4 A Collector current IC 2 A dissipation Ta=25°C


    Original     		2SD1260, 2SD1260A 2SB937 2SB937A 2SD1260 2SB937A 2SD1260 2SD1260A PDF

    2SB0937

    Abstract: 2SB0937A 2SB937 2SB937A 2SD1260 2SD1260A
    Text: Power Transistors 2SB0937 2SB937 , 2SB0937A (2SB937A) Silicon PNP epitaxial planar type Darlington Unit: mm Symbol Rating Unit VCBO −60 V 2SB0937 −80 2SB0937A −60 Emitter-base voltage (Collector open) VEBO −5 V Collector current IC −2 A Peak collector current


    Original     		2SB0937 2SB937) 2SB0937A 2SB937A) 2SB0937 2SB0937A 2SB937 2SB937A 2SD1260 2SD1260A PDF

    2SB0937

    Abstract: 2SB0937A 2SB937 2SB937A 2SD1260 2SD1260A
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0937 (2SB937), 2SB0937A (2SB937A) Silicon PNP epitaxial planar type Darlington Unit: mm 1.0±0.1 2SB0937 Symbol Rating Unit VCBO −60 V −80 2SB0937A −60 Collector-emitter voltage 2SB0937


    Original     		2002/95/EC) 2SB0937 2SB937) 2SB0937A 2SB937A) 2SB0937 2SB0937A 2SB937 2SB937A 2SD1260 2SD1260A PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0937 (2SB937), 2SB0937A (2SB937A) Silicon PNP epitaxial planar type Darlington Unit: mm Rating Unit VCBO −60 V −80 2SB0937A Collector-emitter voltage 2SB0937 (Base open)


    Original     		2002/95/EC) 2SB0937 2SB937) 2SB0937A 2SB937A) 2SD1260, 2SD1260A PDF

    TRANSISTOR 10003

    Abstract: 2SB0937 2SB0937A 2SB937 2SB937A 2SD1260 2SD1260A
    Text: Power Transistors 2SB0937, 2SB0937A 2SB937, 2SB937A Silicon PNP epitaxial planar type Darlington Unit: mm For power amplification and switching Complementary to 2SD1260 and 2SD1260A emitter voltage 2SB0937A 10.0±0.3 Unit: mm –60 V –80 Emitter to base voltage


    Original     		2SB0937, 2SB0937A 2SB937, 2SB937A) 2SD1260 2SD1260A 2SB0937 TRANSISTOR 10003 2SB0937 2SB0937A 2SB937 2SB937A 2SD1260A PDF

    2SB937

    Abstract: 2SB937A 2SD1260 2SD1260A DSA003716
    Text: Power Transistors 2SB937, 2SB937A Silicon PNP epitaxial planar type Darlington Unit: mm For power amplification and switching Complementary to 2SD1260 and 2SD1260A emitter voltage 2SB937A –60 VCEO –80 10.0±0.3 Unit: mm V Emitter to base voltage VEBO –5


    Original     		2SB937, 2SB937A 2SD1260 2SD1260A 2SB937 2SB937 2SB937A 2SD1260A DSA003716 PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0937 (2SB937), 2SB0937A (2SB937A) Silicon PNP epitaxial planar type Darlington Unit: mm Symbol Rating Unit VCBO −60 V 2SB0937 −80 2SB0937A −60 VCEO Emitter-base voltage (Collector open)


    Original     		2002/95/EC) 2SB0937 2SB937) 2SB0937A 2SB937A) 2SD1260, 2SD1260A 2SB0937 PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0937 (2SB937), 2SB0937A (2SB937A) Silicon PNP epitaxial planar type Darlington Unit: mm Symbol Rating Unit VCBO −60 V 2SB0937 −80 2SB0937A −60 VCEO Emitter-base voltage (Collector open)


    Original     		2002/95/EC) 2SB0937 2SB937) 2SB0937A 2SB937A) 2SD1260, 2SD1260A 2SB0937 PDF

    2SB0937

    Abstract: 2SB0937A 2SB937 2SB937A 2SD1260 2SD1260A
    Text: Power Transistors 2SD1260, 2SD1260A Silicon NPN triple diffusion planar type Darlington For power amplification Unit: mm Complementary to 2SB0937 2SB937 and 2SB0937A (2SB937A) VCEO 10.0±0.3 V 80 VEBO 5 V Peak collector current ICP 4 A Collector current


    Original     		2SD1260, 2SD1260A 2SB0937 2SB937) 2SB0937A 2SB937A) 2SD1260 2SB0937 2SB0937A 2SB937 2SB937A 2SD1260 2SD1260A PDF

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


    Original     		2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B PDF

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE PDF

    2SB909

    Abstract: 2SB971 2SB978 2sb911 2SB901 2SB917 2SB918 2SB983 2SD1347 2SB902
    Text: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SB901 -60 -4A 40W(Tc=25ºC) 150 120 -4 -1A 2SB902 -30 -15 -100 200 125


    Original     		2SB901 2SB902 2SB903 2SB904 2SB905 2SB906 2SB907 2SB908 2SB909 2SB910 2SB909 2SB971 2SB978 2sb911 2SB901 2SB917 2SB918 2SB983 2SD1347 2SB902 PDF

    2SD1204

    Abstract: 2SD1202 2SD1278 2SD1227 2SD1300 2SD1225 2SD1297 equivalent 2sd1285 2SD1240 2SD1201
    Text: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber ºñ°í VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 100W 2SD1201 500 7 10A 150 100 3 10A (Tc=25ºC) 100W 2SD1202


    Original     		2SD1201 2SD1202 2SD1203 2SD1204 2SD1205 20002SD1205A 2SD1206 2SB894 2SD1207 2SD1208 2SD1204 2SD1202 2SD1278 2SD1227 2SD1300 2SD1225 2SD1297 equivalent 2sd1285 2SD1240 2SD1201 PDF

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SD1260, 2SD1260A 2SD1260, 2SD1260A Package Dimensions U nit ! mm Silicon NPN Triple-Diffused Planar Darlington Type • High DC current gain 3.7 max 8.7 max. Power Amplifier Complementary Pair with 2SB937, 2SB937A • Features U m ax. 6.5 max.


    OCR Scan     		2SD1260, 2SD1260A 2SB937, 2SB937A 2SD1260 001bb4cJ PDF

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SB937, 2SB937A 2SB937, 2SB937A P ackage Dim ensions U nit : mm Silicon PNP Epitaxial Planar Darlington Type 3.7 max. 8.7 max. P ow er Am plifier, Switching C o m plem entary Pair with 2 S D 1 2 6 0 , 2 S D 1 2 6 0 A I* l.lm ax. 6.5 max.


    OCR Scan     		2SB937, 2SB937A 2SB937 2SB937A PDF

    PA8080

    Abstract: 2SD1245 2SD1246 2SD1247 2SD1248K 2SD1249 2SD1249A 2SD1250 2SD1250A 2SD1251
    Text: - 240 * mXÊfâ Ta=25*0, *0](âTc=25tC m s S 2SD1245 2SD1246 m H # VCBO VcEO (V) (V) 500 400 PSW 30 PSW 30 PA 2SD1247 fè S ic(DC) Pc Pc* I.CBO, (A) (W) (W) (max) (uA) 40 Ä tt Vc b (V) 100 350 (min) [*EP(ïtypÎÜ] V c E Í s a t ) 'ÍB E ( s a t ) (max)


    OCR Scan     		2SD1245 2SD1246 2SD1247 2SD1248K 2SD1249 2SD1249A 2SD1250 2SD1259A 2SB937 2SD1260 PA8080 2SD1246 2SD1247 2SD1250A 2SD1251 PDF

    2SA1302 TOSHIBA

    Abstract: 2SA1302 Toshiba 2Sa1302 SB 1156 2sb817 2SB863 2SB1371 mitsubishi 1183 2SB1407 2SB1201
    Text: - 64 - S € Type No. tt « Manuf. H # SANYO M S TOSHIBA S NEC S ÏZ HITACHI 8 ± Ü FUJITSU fé T MATSUSHITA 2SB 1 1 4 « fé T 2SB 1149— ' « 2S6 1151 , B « 2SB1165 2SB 1152 «5 T 2SB817 2SB 1153 fé T 2SB 1155" fâ T 2SB 1156 - fé T 2SB 1157 fé T 2SB776


    OCR Scan     		2SB1267 2SB937A 2SB1165 2SB933 2SB817 2SB863 2SA1227A 2SA1302 2SB1371 2SB776 2SA1302 TOSHIBA 2SA1302 Toshiba 2Sa1302 SB 1156 2SB1371 mitsubishi 1183 2SB1407 2SB1201 PDF

    2SC144

    Abstract: 2SD466 2sc5266
    Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *


    OCR Scan     		T258-OMI FAX06 2SC144 2SD466 2sc5266 PDF

    2SB927

    Abstract: 2SB930 2SB813 2SB903 2SB904 2SB905 2SB906 2SB907 2SB908 2SB909M
    Text: - 66 - T a = 2 5 cC , *EÎ]ÎÏTc=25<C m z 2SB903 2SB904 tt £ m m 2SB905 2SB906 m m. VcBO VcEO (V) (V) Ic(DC) (A) Pc Pc* w (W) M ICBO (max) Ä) (u Vro (V) M (min) ft W (max) te Vcp (VÍ (Ta=25T;) Ic /1 e (A) [tEPIitypffi] (max) (V) le (A) (V) ÏB Ó O


    OCR Scan     		2SB903 2SB904 2SB905 2SB906 2SB907 2SB908 2SB909M 2SB930 2SD1253A 2SD1254 2SB927 2SB930 2SB813 2SB903 2SB904 2SB905 2SB907 2SB908 PDF

    2SB902

    Abstract: 2SB938 2SB937 2SB937A 2SB938A 2SD1260 2SD1260A 2SD1261 2SD1261A Scans-00138099
    Text: PANASONIC INDL/ELEKiSEMI} 75C I> | b*i35flSM h^>S>7/9 6 | * 2SB902 2SB902 '> ij □ y P N P i l f ^ y y \s~7\s— - y i & / Si P N P Epitaxial Planar —iSiiiH iffl/G eneral Amplifier • 1# M /F e a tu r e s • x. I • 3 L- ? ? ■J)L i •■/ i't&fD'ffiffi VCK sat) A 'tlt'.'o/Low V ,h(SBl)


    OCR Scan     		flci31 2SB902 2SB902 2SB938 2SB937 2SB937A 2SB938A 2SD1260 2SD1260A 2SD1261 2SD1261A Scans-00138099 PDF

    2sb504

    Abstract: 2t306 2N5983 2SD588 2sd73 2sc497 HD6801V
    Text: /T 1 4 R C“ 4 j r\ & M- -_ ~- i l^ it 4 4 ~\ 3 — 4 & 3 * 4 i3 !. 3: " & -\ vi- W- 4 3: - x 1 — v!r 'Hv j 4 n 3 fr 4 j •& $ 3t * 3 r^-. r+ *; 5+ x i •3I .<> iS I R k Q PS Q fit S r\ tiSE H-, 4 4 ~9> x-v r-i 5+ ' s, (vs •u- lit ZSZ\'1* n 3 St


    OCR Scan     		S029747 SS963& 2sb504 2t306 2N5983 2SD588 2sd73 2sc497 HD6801V PDF

    D1274A

    Abstract: B1317 C4714 D1707 b1108 c2258 transistor D2052 transistor transistor b1154 2sD2504 transistor B1398
    Text: Transistors Selection Guide by Packages • SS Mini Type Packages (D1) \ V C E 0 (V) 10 lc (mA) \ pc= i 25 mw 15 20 40 50 150 185 2SC4627 A 2SC5021 -2SA1790 >2SC4626 2SC4655 15 30 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 50 80 2SD2345 (2SA1791 i 2SC4656 2SC4691


    OCR Scan     		2SC4627 2SC5021 -2SA1790 2SC4626 2SC4655 2SC4809 2SC5295 2SC4808 2SA1806 2SD2345 D1274A B1317 C4714 D1707 b1108 c2258 transistor D2052 transistor transistor b1154 2sD2504 transistor B1398 PDF