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    2N6054 Search Results

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    2N6054 Price and Stock

    SPC Multicomp 2N6054

    Trans, Npn, 80V, 8A, 200Deg C, 100W; Transistor Polarity:Npn; No. Of Pins:2Pins; Transistor Mounting:Through Hole; Operating Temperature Max:200°C; Product Range:-; Qualification:-; Collector Emitter Voltage Max:80V Rohs Compliant: Yes |Multicomp Pro 2N6054
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark 2N6054 Bulk 1,000
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    Motorola Mobility LLC 2N6054

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    Bristol Electronics 2N6054 1
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    GTCAP 2N6054

    Bipolar Junction Transistor, Darlington, PNP Type, TO-3
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    Quest Components 2N6054 73
    • 1 $6.75
    • 10 $6.75
    • 100 $4.1625
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    Motorola Semiconductor Products 2N6054

    Bipolar Junction Transistor, Darlington, PNP Type, TO-3
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    Quest Components 2N6054 16
    • 1 $14.175
    • 10 $12.6
    • 100 $12.6
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    2N6054 11
    • 1 $6.75
    • 10 $3.375
    • 100 $3.375
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    2N6054 1
    • 1 $9
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    • 100 $9
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    Central Semiconductor Corp 2N6054

    Bipolar Junction Transistor, Darlington, PNP Type, TO-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2N6054 12
    • 1 $7.14
    • 10 $3.57
    • 100 $3.57
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    2N6054 8
    • 1 $6.75
    • 10 $4.95
    • 100 $4.95
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    2N6054 Datasheets (28)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N6054 Motorola Darlington Complementary Silicon Power Transistor - Pol=PNP / Pkg=TO3 / Vceo=80 / Ic=8 / Hfe=750-18k / fT(Hz)=4M / Pwr(W)=100 Original PDF
    2N6054 Semelab Bipolar PNP Device in a Hermetically Sealed TO3 Metal Package - Pol=PNP / Pkg=TO3 / Vceo=80 / Ic=8 / Hfe=750-18k / fT(Hz)=4M / Pwr(W)=100 Original PDF
    2N6054 Advanced Semiconductor Silicon Transistor Selection Guide Scan PDF
    2N6054 Central Semiconductor Silicon Darlington Power Transistor, TO-3 Scan PDF
    2N6054 Central Semiconductor POWER DARLINGTON TRANSISTORS (EPOXY / METAL) Scan PDF
    2N6054 Crimson Semiconductor EPITAXIAL BASE / PLANAR Transistors Scan PDF
    2N6054 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan PDF
    2N6054 LAMBDA Semiconductor Data Book V1 1988 Scan PDF
    2N6054 Mospec POWER TRANSISTORS(8A,100W) - Pol=PNP / Pkg=TO3 / Vceo=80 / Ic=8 / Hfe=750-18k / fT(Hz)=4M / Pwr(W)=100 Scan PDF
    2N6054 Mospec Darlington Complementary Silicon Power Transistor Scan PDF
    2N6054 Motorola The European Selection Data Book 1976 Scan PDF
    2N6054 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2N6054 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N6054 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N6054 Unknown Transistor Replacements Scan PDF
    2N6054 Unknown Cross Reference Datasheet Scan PDF
    2N6054 Unknown Transistor Replacements Scan PDF
    2N6054 Unknown Transistor Replacements Scan PDF
    2N6054 Unknown Transistor Replacements Scan PDF
    2N6054 Unknown Transistor Replacements Scan PDF

    2N6054 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N6054

    Abstract: 2N6053 2N6055 2N6056
    Text: Inchange Semiconductor Product Specification 2N6053 2N6054 Silicon PNP Power Transistors DESCRIPTION •With TO-3 package ·Low collector saturation voltage ·DARLINGTON ·Complement to type 2N6055;2N6056 APPLICATIONS ·General-purpose power amplifier and low


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    PDF 2N6053 2N6054 2N6055 2N6056 2N6053 2N6054 2N6056

    Untitled

    Abstract: No abstract text available
    Text: 2N6054 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


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    PDF 2N6054 O204AA) 16-Jul-02

    2N6054

    Abstract: No abstract text available
    Text: 2N6054 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


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    PDF 2N6054 O204AA) 31-Jul-02 2N6054

    2N6053

    Abstract: 2N6054 2N6055 2N6056
    Text: SavantIC Semiconductor Product Specification 2N6053 2N6054 Silicon PNP Power Transistors DESCRIPTION •With TO-3 package ·Low collector saturation voltage ·DARLINGTON ·Complement to type 2N6055;2N6056 APPLICATIONS ·General-purpose power amplifier and low


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    PDF 2N6053 2N6054 2N6055 2N6056 2N6053 2N6054 2N6056

    Transistor 358 to3

    Abstract: 2N6054
    Text: 2N6054 Darlington Complementary Silicon Power Transistor 2.86 Transi. 1 of 2 Home Part Number: 2N6054 Online Store 2N6054 Diodes Darlingt o n C o m plem entary Silico n Po w er Transis t o r Transistors


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    PDF 2N6054 com/2n6054 2N6054 Transistor 358 to3

    Untitled

    Abstract: No abstract text available
    Text: 2N6054 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


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    PDF 2N6054 O204AA) 18-Jun-02

    2N6054

    Abstract: 2N6056
    Text: 2N6054/2N6056 Darlington Transistors Features: • General-purpose power amplifier and low frequency switching applications. • Low Collector-Emitter Saturation Voltage VCE SAT = 2.0V (Maximum) at IC = 4.0A = 3.0V (Maximum) at IC = 8.0A • Monolithic construction with Built-in Base-Emitter Shunt Resistors.


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    PDF 2N6054/2N6056 2N6056 2N6054 2N6054 2N6056

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


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    PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    IRF470

    Abstract: IRFP240R IRF840CF IRF449 IRF340A irf520 power IRF341R IRFP20 irf460 to-247 IRF331R
    Text: STI Type: IRF331 Notes: Breakdown Voltage: 350 Continuous Current: 5.5 RDS on Ohm: 1.0 Trans Conductance Mhos: 3.0 Trans Conductance A: 3.0 Gate Threshold min: 2.0 Gate Threshold max: 4.0 Resistance Switching ton: 30 Resistance Switching toff: 55 Resistance Switching ID: 3.0


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    PDF IRF331 O-204AA/TO-3 IRF332 2N6012 O-247 IRFP352R IRFP353R IRF470 IRFP240R IRF840CF IRF449 IRF340A irf520 power IRF341R IRFP20 irf460 to-247 IRF331R

    pmd10K80

    Abstract: PMD17K100 MJ-6503 MJ802 EQUIVALENT 2n6545 BDW52 BU208A BUW35 PMD10K40 BDX88
    Text: Power Transistors TO-3 Case TYPE NO. IC PD BVCBO BVCEO hFE V MIN (V) MIN MIN @ IC VCE(SAT) @ IC PNP (A) MAX (W) NPN 2N3055 MJ2955 15 115 100 60 5.0 - 10 10 117 160 140 20 70 3.0 2N3442 (A) MAX (V) MAX fT (A) (MHz) MIN 3.0 10 2.5 5.0 10 - 2N3713 2N3789


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    PDF 2N3055 MJ2955 2N3442 2N3713 2N3789 2N3714 2N3790 2N3715 2N3791 2N3716 pmd10K80 PMD17K100 MJ-6503 MJ802 EQUIVALENT 2n6545 BDW52 BU208A BUW35 PMD10K40 BDX88

    2N6055

    Abstract: 2N6053 2N6054 2N6056 2N6055 transistor 2N6052
    Text: Data Sheet Central Semiconductor Corp. 2N6053 2N6054 PNP 2N6055 2N6056 NPN COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTOR 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC TO-3 CASE Manufacturers of W orld Class Discrete Semiconductors


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    PDF 2N6053 2N6054 2N6055 2N6056 2N6053, 2N6055) 2N6054, 2N6056) 2N6055 transistor 2N6052

    Untitled

    Abstract: No abstract text available
    Text: 2N6054 m \\ SILICON PNP-DARLINGTON POWER TRANSISTOR DESCRIPTION: The 2N6054 is Designed for General Purpose Amplifier and Switching Applications. PACKAGE STYLE T O - 3 k. I MAX. I MAXIMUM RATINGS 8.0 A lc -80 V ce 100 W @ T C = 25 °C P diss 65 °C to +200 °C


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    PDF 2N6054 2N6054

    2N6220

    Abstract: 2N6256 2N6258 PNP 2N60 2N6033 2N6047 2N6049 2N6049E 2N6050 2N6051
    Text: 4ÖE J> m Ö1331Ö7 00DÜ442 322 SEMELAB SEMELAB LT D TW t> \ BI POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY HI-REL Type Number 2N6033 2N6047 2N6049 2N6049E 2N6050 2N6051 2N6052 2N6053 2N6054 2N6055 2N6056 2N6057 2N6058 2N6059 2N6077 2N6078 2N6079


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    PDF 2N6033 2N6047 2N6049 2N6049E 2N6050 750-12k 2N6051 2N6052 2N6220 2N6256 2N6258 PNP 2N60

    transistor te 2443

    Abstract: No abstract text available
    Text: 2N6054 SILICON NPN-DARLINGTON POWER TRANSISTOR DESCRIPTION: The 2N6294 is Designed for General Purpose Amplifier and Switching Applications. PACKAGE STYLE TO- 66 < o m MAXIMUM RATINGS 4.o A Ie 8.o A PEAK 6o V Pd is s 5o W @ Te # 25 0C Tj -65 0C to +2oo 0C


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    PDF 2N6054 2N6294 RAD8-89 RAD190 transistor te 2443

    2N6054

    Abstract: No abstract text available
    Text: 2N6054 SILICON PNP-DARLINGTON POWER TRANSISTOR DESCRIPTION; The 2N6054 is Designed for General Purpose Amplifier and Switching Applications. PACKAGE STYLE TO- 3 MAXIMUM RATINGS Ie 8.O A Vc e -8O V Pd is s 1OO W @ Te " 25 0C Tj 65 0C to +2OO 0C Ts t g 65 0C to +2OO 0C


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    PDF 2N6054

    2N6300

    Abstract: No abstract text available
    Text: M OT OR OL A SC X S TR S /R 1SE D I L3b7254 QQflMSTS 5 I F • 2N6053, 2N6054 2N6298, 2N6299 PNP 2N6055, 2N6056 2N6300, 2N6301 NPN MOTOROLA SEMICONDUCTOR TECHNICAL DATA D ARLIN GTO N COM PLEM EN TARY SILICON POWER TRAN SISTO RS DARLINGTON 8 AM PERE . . . designed for general-purpose amplifier and low frequency switching


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    PDF L3b7254 2N6053, 2N6054 2N6298, 2N6299 2N6055, 2N6056 2N6300, 2N6301 2N6300

    Untitled

    Abstract: No abstract text available
    Text: General Transistor Corporation CASE TO-3 le MAX = 2-50A V c e o (sus) = 35-500V NPN Power Transistors PNP Type No. complement MJ1000 MJ900 MJ1001 MJ3001 MJ13014 MJ901 MJ2501 DARLINGTON yes yes yes yes MJ10012 MJ13015 MJ 13330 VCEO (sus) IC (max) (v) (A)


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    PDF 5-500V MJ1000 MJ900 MJ1001 MJ3001 MJ13014 MJ901 MJ2501 MJ10012 MJ13015

    MC7805CK

    Abstract: MC7812Ck MC7815CK MC7824CK LM340K-24 LM7812KC lm7805kc LM340K24 LM7824KC 78h05ck
    Text: Selection of Equivalents for Monolithic Voltage Regulators, Darlington Transistors, Rectifiers and Switching Transistors LAMBDA TYPE * LAS723A LAS723B LAS1000 LAS1100 LAS1405 LAS1406 LAS1408 LAS1410 LAS1412 LAS1415 LAS14U LAS1505 LAS 1506 LAS1508 LAS1510


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    PDF LAS723A LAS723B LAS1100 LAS1405 LM123K LM223K LM323K SH0323 LAS1406 LAS1408 MC7805CK MC7812Ck MC7815CK MC7824CK LM340K-24 LM7812KC lm7805kc LM340K24 LM7824KC 78h05ck

    MJE3055F

    Abstract: SE9300 FT3055 2N3715 FAIRCHILD FT50 SE9303 2N3440 2N5683 2N5684 2N5685
    Text: FAIRCHILD TRANSISTORS POWER POWER TRANSISTORS BY lC max, POLARITY AND ASCENDING VCEO Item DEVICE NO. Polarity NPN PNP ic = 50.0 A Max v CEO V Max VCE(sat) @ ic V A Max hpE @ 'C A Min/Max (Cont d) it PD(Max) MHz Min(Typ) Tc= 25°C Package No. Continuous (Cont'd)


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    PDF 2N5685 2N5683 2N5686 2N5684 2N3440 2N6387* 1K/20K O-220 MJE30S5F MJE3055F SE9300 FT3055 2N3715 FAIRCHILD FT50 SE9303 2N3440

    transistor buv18a

    Abstract: motorola transistor cross reference BUV18A BUX98A motorola N6030 BUT13 transistor buv10 MPSU06 transistor MJ12005 MOTOROLA MJ15021 "cross reference"
    Text: STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR COLLECTOR CONNECTED TO TAB Resistive Switching IcCont Amps Max VcEO sus) Volts Min 0.5 300 MPSU10 0.8 40 MPSU02 1 120 2 Device Type *s US Max tf US Max fT MHz Min P q (Case) Watts hFE Min/Max @ lc Amp MPSU60 30 min


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    PDF MPSU10 MPSU02 MPSU03 MPSU04 MPSU01 MPSU01A MPSU45# MPSU60 MPSU52 MPSU51 transistor buv18a motorola transistor cross reference BUV18A BUX98A motorola N6030 BUT13 transistor buv10 MPSU06 transistor MJ12005 MOTOROLA MJ15021 "cross reference"

    triac zd 607

    Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
    Text: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.


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    PDF SG73/D triac zd 607 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845

    2N3442

    Abstract: 2N5875 NPN Transistor 2N3055 darlington 2N3055 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790
    Text: Pow er Transistors TO-3 Case TYPE NO. •c Pd BVc b O b v C e o @ Ic hFE VCE SAT @ <c *TYP (A) NPN 2N3055 PNP MJ2955 2N3442 (W) MAX 15 115 (A) (V) (V) MIN MIN MIN 100 60 5.0 — 00 (A) 10 (MHZ) MIN MAX MAX fT *TYP 3.0 10 2.5 . 10 117 160 140 20 70 3.0 5.0


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    PDF 2N3055 MJ2955 2N3442 2N3713 2N3789 2N3714 2N3790 2N3715 2N3791 2N3716 2N3442 2N5875 NPN Transistor 2N3055 darlington

    RCA8350B

    Abstract: RCA8350 30957 2N6053 2N612B 2N6054 RCA8350A TIP600 TIP601 TIP602
    Text: INSTR -COPTÔ} 8961726 b2 TEXAS INSTR Ï Ë J a^bl?2h 0031^52 OPTO 62C 36952 D TIP605, TIP606, TIP6Ô7 P-N-P DARLINGTON-CONNECTED SILICON POWER TRANSISTORS REVISED OCTOBER 1984 T T—33 —31 Designed For Complementary Use With TIP600, TIP601, TIP602 10 A Rated Collector Current


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    PDF TIP605, TIP606, TIP600, TIP601, TIP602 2N6053, 2N6054, RCA8350, RCA8350A, RCA8350B RCA8350B RCA8350 30957 2N6053 2N612B 2N6054 RCA8350A TIP600 TIP601 TIP602

    TRIAC 97A6

    Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
    Text: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1


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    PDF OD-80 OD-323 OT-23 OT-89 OT-143 OT-223 OT-323 TRIAC 97A6 S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C