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    2N6056 Search Results

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    2N6056 Price and Stock

    SPC Multicomp 2N6056

    Trans, Npn, 80V, 8A, 200Deg C, 100W; Transistor Polarity:Npn; No. Of Pins:2Pins; Transistor Mounting:Through Hole; Operating Temperature Max:200°C; Product Range:-; Qualification:-; Collector Emitter Voltage Max:80V Rohs Compliant: Yes |Multicomp Pro 2N6056
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark 2N6056 Bulk 1,000
    • 1 -
    • 10 -
    • 100 -
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    GTCAP 2N6056

    Bipolar Junction Transistor, Darlington, NPN Type, TO-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2N6056 444
    • 1 $3.87
    • 10 $3.87
    • 100 $2.3865
    • 1000 $2.1285
    • 10000 $2.1285
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    Central Semiconductor Corp 2N6056

    Bipolar Junction Transistor, Darlington, NPN Type, TO-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2N6056 146
    • 1 $3.6
    • 10 $3.6
    • 100 $1.8
    • 1000 $1.68
    • 10000 $1.68
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    Motorola Semiconductor Products 2N6056

    Bipolar Junction Transistor, Darlington, NPN Type, TO-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2N6056 3
    • 1 $8.64
    • 10 $6.336
    • 100 $6.336
    • 1000 $6.336
    • 10000 $6.336
    		Buy Now
    2N6056 2
    • 1 $9.4572
    • 10 $7.881
    • 100 $7.881
    • 1000 $7.881
    • 10000 $7.881
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    2N6056 Datasheets (31)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N6056 Motorola Darlington Complementary Silicon Power Transistor - Pol=NPN / Pkg=TO3 / Vceo=80 / Ic=8 / Hfe=750min / fT(Hz)=4M / Pwr(W)=100 Original PDF
    2N6056 On Semiconductor TRANS DARLINGTON NPN 80V 8A 3TO-204AA - Pol=NPN / Pkg=TO3 / Vceo=80 / Ic=8 / Hfe=750min / fT(Hz)=4M / Pwr(W)=100 Original PDF
    2N6056 Semelab Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package - Pol=NPN / Pkg=TO3 / Vceo=80 / Ic=8 / Hfe=750min / fT(Hz)=4M / Pwr(W)=100 Original PDF
    2N6056 Advanced Semiconductor Silicon Transistor Selection Guide Scan PDF
    2N6056 Central Semiconductor POWER DARLINGTON TRANSISTORS (EPOXY / METAL) Scan PDF
    2N6056 Central Semiconductor Silicon Darlington Power Transistor, TO-3 Scan PDF
    2N6056 Crimson Semiconductor EPITAXIAL BASE / PLANAR Transistors Scan PDF
    2N6056 General Electric 8 A silicon N-P-N darlington power transistor. - Pol=NPN / Pkg=TO3 / Vceo=80 / Ic=8 / Hfe=750min / fT(Hz)=4M / Pwr(W)=100 Scan PDF
    2N6056 LAMBDA Semiconductor Data Book V1 1988 Scan PDF
    2N6056 Mospec POWER TRANSISTORS(8A,100W) - Pol=NPN / Pkg=TO3 / Vceo=80 / Ic=8 / Hfe=750min / fT(Hz)=4M / Pwr(W)=100 Scan PDF
    2N6056 Mospec Darlington Complementary Silicon Power Transistor Scan PDF
    2N6056 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2N6056 Motorola The European Selection Data Book 1976 Scan PDF
    2N6056 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N6056 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N6056 Unknown Shortform Electronic Component Datasheets Short Form PDF
    2N6056 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N6056 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N6056 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2N6056 Unknown Basic Transistor and Cross Reference Specification Scan PDF

    2N6056 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N6055

    Abstract: 2N6056 2N6053 2N6054
    Text: Inchange Semiconductor Product Specification 2N6055 2N6056 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Low collector saturation voltage ·DARLINGTON ·Complement to type 2N6053;2N6054 APPLICATIONS ·General-purpose power amplifier and low


    Original     		PDF 2N6055 2N6056 2N6053 2N6054 2N6055 2N6056 2N6054

    2N6056

    Abstract: No abstract text available
    Text: 2N6056 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		PDF 2N6056 O204AA) 31-Jul-02 2N6056

    Untitled

    Abstract: No abstract text available
    Text: 2N6056 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		PDF 2N6056 O204AA) 16-Jul-02

    2N6056

    Abstract: 1N5825 MSD6100
    Text: ON Semiconductort 2N6056 NPN Darlington Silicon Power Transistor ON Semiconductor Preferred Device . . . designed for general–purpose amplifier and low frequency switching applications. DARLINGTON 8 AMPERE SILICON POWER TRANSISTOR 80 VOLTS 100 WATTS • High DC Current Gain —


    Original     		PDF 2N6056 r14525 2N6056/D 2N6056 1N5825 MSD6100

    1N5825

    Abstract: 2N6056 MSD6100
    Text: 2N6056 NPN Darlington Silicon Power Transistor The NPN Darlington silicon power transistor is designed for general−purpose amplifier and low frequency switching applications. • High DC Current Gain — • • http://onsemi.com hFE = 3000 Typ @ IC = 4.0 Adc


    Original     		PDF 2N6056 2N6056/D 1N5825 2N6056 MSD6100

    2N6055

    Abstract: 2N6056 2N6054 2N6053
    Text: SavantIC Semiconductor Product Specification 2N6055 2N6056 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Low collector saturation voltage ·DARLINGTON ·Complement to type 2N6053;2N6054 APPLICATIONS ·General-purpose power amplifier and low


    Original     		PDF 2N6055 2N6056 2N6053 2N6054 2N6055 2N6056 2N6054

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by 2N6056/D SEMICONDUCTOR TECHNICAL DATA 2N6056 NPN Darlington Silicon Power Transistor Motorola Preferred Device . . . designed for general–purpose amplifier and low frequency switching applications. DARLINGTON 8 AMPERE SILICON


    Original     		PDF 2N6056/D 2N6056

    Untitled

    Abstract: No abstract text available
    Text: 2N6056 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		PDF 2N6056 O204AA) 18-Jun-02

    2N6056

    Abstract: ALL SILICON COMPLEMENTARY transistors darlington
    Text: 2N6056 Darlington complementary silicon power transistor 8.63 Transistors Darlington T. Page 1 of 2 Enter Your Part # Home Part Number: 2N6056 Online Store 2N6056 Diodes Darlington complementary silicon power transistor Transistors Integrated Circuits Optoelectronics


    Original     		PDF 2N6056 2N6056 com/2n6056 ALL SILICON COMPLEMENTARY transistors darlington

    2N6055 MOTOROLA

    Abstract: Darlington Silicon Power Transistor 10 amp npn darlington power transistors 2N6055 100 amp npn darlington power transistors 2N6056 2N6056 MOTOROLA POWER BIPOLAR JUNCTION TRANSISTOR power transistors 03 transistor
    Text: MOTOROLA Order this document by 2N6055/D SEMICONDUCTOR TECHNICAL DATA NPN 2N6055 2N6056* Darlington Complementary Silicon Power Transistors *Motorola Preferred Device . . . designed for general–purpose amplifier and low frequency switching applications.


    Original     		PDF 2N6055/D 2N6055 2N6056* 2N6056 2N6055/D* 2N6055 MOTOROLA Darlington Silicon Power Transistor 10 amp npn darlington power transistors 2N6055 100 amp npn darlington power transistors 2N6056 2N6056 MOTOROLA POWER BIPOLAR JUNCTION TRANSISTOR power transistors 03 transistor

    BD139

    Abstract: BU108 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N6055 2N6056* Darlington Complementary Silicon Power Transistors *Motorola Preferred Device . . . designed for general–purpose amplifier and low frequency switching applications. DARLINGTON 8 AMPERE COMPLEMENTARY


    Original     		PDF 2N6055 2N6056 2N6056* TIP73B TIP74 TIP74A TIP74B TIP75 BD139 BU108 BU326 BU100

    2N6054

    Abstract: 2N6056
    Text: 2N6054/2N6056 Darlington Transistors Features: • General-purpose power amplifier and low frequency switching applications. • Low Collector-Emitter Saturation Voltage VCE SAT = 2.0V (Maximum) at IC = 4.0A = 3.0V (Maximum) at IC = 8.0A • Monolithic construction with Built-in Base-Emitter Shunt Resistors.


    Original     		PDF 2N6054/2N6056 2N6056 2N6054 2N6054 2N6056

    MC68B21CP

    Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
    Text: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References


    Original     		PDF SG379/D 1N965BRL ZEN15V 1N751AS 1N967BRL ZEN18V 1N751ASRL 1N968BRL ZEN20V MC68B21CP xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


    Original     		PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    Untitled

    Abstract: No abstract text available
    Text: HARRIS SEIUCOND SECTOR SbE D • M3DE271 □ D 4 0 im 2N6055, 2N6056 Tb3 H H A S File Number 563 8-Ampere Silicon N-P-N Darlington Power Transistors 60- and 80-Volt, 100-Watt Types With Gain of 750 at 4 Amperes TERMINAL DESIGNATIONS Features: ■ Operation from 1C without predriver


    OCR Scan     		PDF M3DE271 2N6055, 2N6056 80-Volt, 100-Watt 2N6055 2N6056 92CS-I9942

    2N6220

    Abstract: 2N6256 2N6258 PNP 2N60 2N6033 2N6047 2N6049 2N6049E 2N6050 2N6051
    Text: 4ÖE J> m Ö1331Ö7 00DÜ442 322 SEMELAB SEMELAB LT D TW t> \ BI POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY HI-REL Type Number 2N6033 2N6047 2N6049 2N6049E 2N6050 2N6051 2N6052 2N6053 2N6054 2N6055 2N6056 2N6057 2N6058 2N6059 2N6077 2N6078 2N6079


    OCR Scan     		PDF 2N6033 2N6047 2N6049 2N6049E 2N6050 750-12k 2N6051 2N6052 2N6220 2N6256 2N6258 PNP 2N60

    2N6053

    Abstract: 2N6055 2N6054 2N6056
    Text: ¿2&M0SPEC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS PNP 2N6053 2 N6054 General-purpose power amplifier and low frequency switching applications NPN 2N6055 2N6056 FEATURES: * Low Collector-Emitter Saturation Voltage VCE SAT =2.0V(Max.)@lc=4.0A =3.0V(Max.)@lc=8.0A


    OCR Scan     		PDF 2N6053 2N6055 N6054 2N6056 2N6055 2N6054 2N6056 2N6054,

    N6055

    Abstract: RCA-2N6055 SUS CIRCUIT 2N6055 2N6056 darlington npn rca TYPES OF TRANSISTORS TEKTRONIX TRANSISTORS
    Text: 3875081 G E SOLID STATE~Öl Dlf| 3375001 0017534 7 ^ $ 3Darlington Power ? _ 2N6055, 2N6056 File Number 8-Ampere Silicon N-P-N Darlington Power Transistors 60- and 80-Volt, 100-Watt Types


    OCR Scan     		PDF 3fl75Dfll 0D17534 2N6055, 2N6056 80-Volt, 100-Watt O-204AA RCA-2N6055 0D17H3Ã N6055 SUS CIRCUIT 2N6055 darlington npn rca TYPES OF TRANSISTORS TEKTRONIX TRANSISTORS

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by 2N6056/D SEMICONDUCTOR TECHNICAL DATA 2 N 60 56 NPN D arlington Silicon Pow er Transistor Motorola Preferred Device . . . designed for general-purpose amplifier and low frequency switching applications. • • • • DARLINGTON


    OCR Scan     		PDF 2N6056/D O-204AA

    Transistor 638 MOTOROLA

    Abstract: 2N6056 MOTOROLA DIODE 851 MOTOROLA eisc REF2667
    Text: M OTOROLA Order this document by 2N6056/D SEMICONDUCTOR TECHNICAL DATA 2N6056 NPN Darlington S ilicon Power Transistor Motorola Preferred Device . . . designed for general-purpose amplifier and low frequency switching applications. DARLINGTON 8 AMPERE SILICON


    OCR Scan     		PDF 2N6056/D Transistor 638 MOTOROLA 2N6056 MOTOROLA DIODE 851 MOTOROLA eisc REF2667

    Untitled

    Abstract: No abstract text available
    Text: 2N6055, 2N6056 File N u m b e r 563 8-Ampere Silicon N-P-N Darlington Power Transistors 60- and 80-V olt, 100-Watt Types W ith Gain o f 750 at 4 Amperes TERM INAL DESIGNATIONS Features: • Operation from 1C w ith o u t predriver ■ Low leakage at high temperature


    OCR Scan     		PDF 2N6055, 2N6056 100-Watt O-204A

    2N6300

    Abstract: No abstract text available
    Text: M OT OR OL A SC X S TR S /R 1SE D I L3b7254 QQflMSTS 5 I F • 2N6053, 2N6054 2N6298, 2N6299 PNP 2N6055, 2N6056 2N6300, 2N6301 NPN MOTOROLA SEMICONDUCTOR TECHNICAL DATA D ARLIN GTO N COM PLEM EN TARY SILICON POWER TRAN SISTO RS DARLINGTON 8 AM PERE . . . designed for general-purpose amplifier and low frequency switching


    OCR Scan     		PDF L3b7254 2N6053, 2N6054 2N6298, 2N6299 2N6055, 2N6056 2N6300, 2N6301 2N6300

    2N6054

    Abstract: 2N6056
    Text: SEMTECH CÔRP SÔE D • 313^13^ 0003304 OST « S E 100 WATT 8 AM P CONTINUOUS, 16 AM P PEAK 2N 6054, 2n6056 ‘ MAXIMUM RATINGS PARAM ETER SYM BO L C o lle cto r E m itter Voltage C o lle cto r B ase Voltage E m itte r B ase Voltage V dc VcBO 80 Vdc ho


    OCR Scan     		PDF 2N6054, 2N6056 2N6056) 2N6054) 00033CH 2N6054 2N6056

    Untitled

    Abstract: No abstract text available
    Text: General Transistor Corporation CASE TO-3 le MAX = 2-50A V c e o (sus) = 35-500V NPN Power Transistors PNP Type No. complement MJ1000 MJ900 MJ1001 MJ3001 MJ13014 MJ901 MJ2501 DARLINGTON yes yes yes yes MJ10012 MJ13015 MJ 13330 VCEO (sus) IC (max) (v) (A)


    OCR Scan     		PDF 5-500V MJ1000 MJ900 MJ1001 MJ3001 MJ13014 MJ901 MJ2501 MJ10012 MJ13015