2N6301 Search Results
2N6301 Price and Stock
Microchip Technology Inc 2N6301TRANS NPN DARL 80V 8A TO66 |
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Central Semiconductor Corp CP127-2N6301-CT5TRANS NPN DARL 80V 8A DIE |
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Microchip Technology Inc 2N6301PTRANS NPN DARL 80V 8A TO66 |
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Microchip Technology Inc 2N6301E3TRANS NPN DARL 80V 8A TO66 |
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Microchip Technology Inc JAN2N6301TRANS NPN DARL 80V 8A TO66 |
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2N6301 Datasheets (34)
Part |
ECAD Model |
Manufacturer |
Description |
Curated |
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2N6301 |
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PNP Darlington Power Silicon Transistor | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2N6301 | Motorola | Darlington Complementary Silicon Power Transistor - Pol=NPN / Pkg=TO66 / Vceo=80 / Ic=8 / Hfe=750-18k / fT(Hz)=4M / Pwr(W)=75 | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2N6301 |
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Bipolar NPN Device in a Hermetically Sealed TO66 Metal Package - Pol=NPN / Pkg=TO66 / Vceo=80 / Ic=8 / Hfe=750-18k / fT(Hz)=4M / Pwr(W)=75 | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2N6301 | Boca Semiconductor | DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS - Pol=NPN / Pkg=TO66 / Vceo=80 / Ic=8 / Hfe=750-18k / fT(Hz)=4M / Pwr(W)=75 | Scan | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2N6301 |
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Darlington Bipolar Transistor, NPN, 100V, TO-66, 2-Pin - Pol=NPN / Pkg=TO66 / Vceo=80 / Ic=8 / Hfe=750-18k / fT(Hz)=4M / Pwr(W)=75 | Scan | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2N6301 | Mospec | POWER TRANSISTORS(8A, 75W) - Pol=NPN / Pkg=TO66 / Vceo=80 / Ic=8 / Hfe=750-18k / fT(Hz)=4M / Pwr(W)=75 | Scan | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2N6301 | Motorola | The European Selection Data Book 1976 | Scan | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2N6301 | Motorola | European Master Selection Guide 1986 | Scan | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2N6301 | Motorola | Power Transistor Selection Guide | Scan | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2N6301 | Motorola | Motorola Semiconductor Data & Cross Reference Book | Scan | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2N6301 | Unknown | Shortform IC and Component Datasheets (Plus Cross Reference Data) | Short Form | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2N6301 | Unknown | Semiconductor Master Cross Reference Guide | Scan | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2N6301 | Unknown | Shortform Transistor Datasheet Guide | Short Form | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2N6301 | Unknown | Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. | Historical | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N6301 | Unknown | Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. | Historical | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2N6301 | Unknown | Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. | Historical | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2N6301 | Unknown | Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. | Historical | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2N6301 | Unknown | Basic Transistor and Cross Reference Specification | Scan | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2N6301 | Unknown | Transistor Shortform Datasheet & Cross References | Scan | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2N6301 | Unknown | Transistor Replacements | Scan |
2N6301 Datasheets Context Search
Catalog Datasheet |
Type |
Document Tags |
PDF |
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2N6298
Abstract: 2N6299 2N6300 2N6301
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OCR Scan |
2N6298, 2N6299 2N6300, 2N6301 2N6300 2N6299, 2N6301 2N6300 2N6298 | |
Contextual Info: 2N6298 2N6299 2N6300 2N6301 PNP NPN COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6298 series devices are complementary silicon Darlington power transistors manufactured by the epitaxial base process |
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2N6298 2N6299 2N6300 2N6301 100mA 2N6299, 2N6301) 100kHz | |
2n6300Contextual Info: NPN Darlington Power Silicon Transistor 2N6300 & 2N6301 Features • Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/539 • TO-66 TO-213AA Package Maximum Ratings Symbol 2N6300 2N6301 Units Collector - Emitter Voltage Ratings VCEO 60 80 Vdc Collector - Base Voltage |
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2N6300 2N6301 MIL-PRF-19500/539 O-213AA) 2N6300 | |
2N6301 applications
Abstract: TO-213AA 1000C 2N6300 2N6301
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2N6300 2N6301 MIL-PRF-19500/539 2N6300 2N6301 1000C O-213AA) 2N6301 applications TO-213AA 1000C | |
2N6301Contextual Info: 2N6300 and 2N6301 NPN Darlington Power Silicon Transistor Available Qualified per MIL-PRF-19500/539 Qualified Levels: JAN, JANTX, and JANTXV DESCRIPTION This high speed NPN transistor is rated at 8 amps and is military qualified up to a JANTXV level. This TO-213AA isolated package features a 180 degree lead orientation. |
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2N6300 2N6301 MIL-PRF-19500/539 O-213AA O-213AA T4-LDS-0171, 2N6301 | |
Contextual Info: NPN Darlington Power Silicon Transistor 2N6300 & 2N6301 Features • Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/539 • TO-66 TO-213AA Package Maximum Ratings Symbol 2N6300 2N6301 Units Collector - Emitter Voltage Ratings VCEO 60 80 Vdc Collector - Base Voltage |
Original |
2N6300 2N6301 MIL-PRF-19500/539 O-213AA) | |
Contextual Info: 2N6300 2N6301 MECHANICAL DATA Dimensions in mm inches 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. 11.94 (0.470) 12.70 (0.500) 2 Designed for general purpose amplifier and low frequency switching applications. 0.71 (0.028) |
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2N6300 2N6301 O-213AA) | |
2N6300
Abstract: 2N6301
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2N6300 2N6301 MIL-PRF-19500/539 1000C 2N6300 2N6301 O-213AA) | |
Contextual Info: 2N6299SMD 2N6301SMD 2N6299SMD05 2N6301SMD05 MECHANICAL DATA Dimensions in mm inches 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) COMPLEMENTARY SILICON POWER TRANSISTORS 3 .6 0 (0 .1 4 2 ) M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 1 1 0 .6 9 (0 .4 2 1 ) |
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2N6299SMD 2N6301SMD 2N6299SMD05 2N6301SMD05 2N6299SMD 2N6301SMD O-276AB) | |
Contextual Info: 2N6299SMD 2N6301SMD 2N6299SMD05 2N6301SMD05 MECHANICAL DATA Dimensions in mm inches 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) COMPLEMENTARY SILICON POWER TRANSISTORS 3 .6 0 (0 .1 4 2 ) M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 1 1 0 .6 9 (0 .4 2 1 ) |
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2N6299SMD 2N6301SMD 2N6299SMD05 2N6301SMD05 2N6301SMD O-276AB) lab/0516/2N6299-JQR-B 2N6299-JQR" 2N6299-JQR-B | |
2N6301
Abstract: ams 2411
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Original |
2N6301 2N6301 com/2n6301 ams 2411 | |
2N6301
Abstract: 1000C 2N6300 2N6300 JANTXV
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Original |
MIL-PRF-19500/539 2N6300 2N6301 1000C O-213AA) 2N6301 1000C 2N6300 2N6300 JANTXV | |
Contextual Info: 2N6300 and 2N6301 NPN Darlington Power Silicon Transistor Available Qualified per MIL-PRF-19500/539 Qualified Levels: JAN, JANTX, and JANTXV DESCRIPTION This high speed NPN transistor is rated at 8 amps and is military qualified up to a JANTXV level. This TO-213AA isolated package features a 180 degree lead orientation. |
Original |
2N6300 2N6301 MIL-PRF-19500/539 O-213AA O-213AA T4-LDS-0171, | |
Contextual Info: SHD418302 SHD418302A SHD418302B SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4024, REV.Formerly part number SHD4182/A/B NPN BI-POLAR DARLINGTON POWER TRANSISTOR • • • Hermetic, Ceramic Package Electrically equivalent to 2N6301 Surface Mount Package |
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SHD4182/A/B SHD418302 SHD418302A SHD418302B 2N6301 | |
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t066
Abstract: 2n6354a 2N6278 2N6279 2N6280 2N6281 2N6282 2N6283 2N6284 2N6285
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OCR Scan |
QD0D443 2N6278 2N6279 2N6280 2N6281 2N6282 750-18k 2N6283 2N6284 t066 2n6354a 2N6285 | |
Contextual Info: 2N6299SMD 2N6301SMD COMPLEMENTARY SILICON POWER TRANSISTORS MECHANICAL DATA Dimensions in mm inches 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 3 .6 0 (0 .1 4 2 ) M a x . 2 9 .6 9 .3 1 1 .5 1 1 .2 2N6301SMD - NPN TRANSISTOR 7 (0 8 (0 8 (0 8 (0 .3 8 .3 6 .4 5 .4 4 |
Original |
2N6299SMD 2N6301SMD 2N6301SMD | |
Contextual Info: 2N6301 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar NPN Device in a |
Original |
2N6301 O213AA) 30-Jul-02 | |
2N6299SMD
Abstract: 2N6299SMD05 2N6301SMD 2N6301SMD05 SMD05 75W PNP TO276AA
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Original |
2N6299SMD 2N6301SMD 2N6299SMD05 2N6301SMD05 2N6299SMD 2N6301SMD O-276AB) 2N6299SMD05 2N6301SMD05 SMD05 75W PNP TO276AA | |
2N6298
Abstract: Darlington 40A 2n6300
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Original |
2N6298 2N6299 2N6300 2N6301 2N6301 100mA Darlington 40A | |
2N6301Contextual Info: 2N6301 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar NPN Device in a |
Original |
2N6301 O213AA) 1-Aug-02 2N6301 | |
2N6300
Abstract: 2N6301 2N6298
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Original |
2N6300 2N6301 2N6298/6299 2N6300 2N6301 2N6298 | |
Contextual Info: 2N6298 2N6299 2N6300 2N6301 PNP NPN COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6298 series types are complementary silicon darlington power transistors manufactured by the epitaxial base process |
Original |
2N6298 2N6299 2N6300 2N6301 Operatin00) 100mA 2N6299, 2N6301) 100kHz | |
2N6300Contextual Info: M OT OR OL A SC X S TR S /R 1SE D I L3b7254 QQflMSTS 5 I F • 2N6053, 2N6054 2N6298, 2N6299 PNP 2N6055, 2N6056 2N6300, 2N6301 NPN MOTOROLA SEMICONDUCTOR TECHNICAL DATA D ARLIN GTO N COM PLEM EN TARY SILICON POWER TRAN SISTO RS DARLINGTON 8 AM PERE . . . designed for general-purpose amplifier and low frequency switching |
OCR Scan |
L3b7254 2N6053, 2N6054 2N6298, 2N6299 2N6055, 2N6056 2N6300, 2N6301 2N6300 | |
2N6301SMD05Contextual Info: 2N6301SMD05 Dimensions in mm inches . 7.54 (0.296) 0.76 (0.030) min. 2.41 (0.095) 3.175 (0.125) Max. 2.41 (0.095) 3.05 (0.120) 0.127 (0.005) 3 10.16 (0.400) 5.72 (.225) 0.76 (0.030) min. 1 Bipolar NPN Device in a Hermetically sealed Ceramic Surface Mount |
Original |
2N6301SMD05 O276AA) 15-Aug-02 2N6301SMD05 |