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    18N60 Search Results

    18N60 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    SiT1602BC-21-18N-6.000000 SiTime 3.57 to 77.76 MHz, Low Power Oscillator Datasheet
    SiT1602BC-72-18N-60.000000 SiTime 3.57 to 77.76 MHz, Low Power Oscillator Datasheet
    SiT1602BC-73-18N-6.000000 SiTime 3.57 to 77.76 MHz, Low Power Oscillator Datasheet
    SiT1602BI-11-18N-60.000000 SiTime 3.57 to 77.76 MHz, Low Power Oscillator Datasheet
    SiT1602BI-12-18N-6.000000 SiTime 3.57 to 77.76 MHz, Low Power Oscillator Datasheet
    SiT1602BI-32-18N-6.000000 SiTime 3.57 to 77.76 MHz, Low Power Oscillator Datasheet
    SF Impression Pixel

    18N60 Price and Stock

    STMicroelectronics STB18N60M2

    MOSFET N-CH 600V 13A D2PAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey STB18N60M2 Reel 2,000 1,000
    • 1 -
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    • 100 -
    • 1000 $1.07464
    • 10000 $0.95
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    STB18N60M2 Cut Tape 766 1
    • 1 $2.26
    • 10 $1.881
    • 100 $1.4968
    • 1000 $1.26654
    • 10000 $1.26654
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    Mouser Electronics STB18N60M2 603
    • 1 $2.37
    • 10 $1.97
    • 100 $1.57
    • 1000 $1.12
    • 10000 $1.02
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    STMicroelectronics STD18N60M6

    MOSFET N-CH 600V 13A DPAK
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    DigiKey STD18N60M6 Cut Tape 1,637 1
    • 1 $2.17
    • 10 $1.8
    • 100 $1.4328
    • 1000 $1.02868
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    Mouser Electronics STD18N60M6 2,433
    • 1 $2.06
    • 10 $1.74
    • 100 $1.48
    • 1000 $1
    • 10000 $0.968
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    TME STD18N60M6 2,471 1
    • 1 $2.27
    • 10 $2.05
    • 100 $1.63
    • 1000 $1.51
    • 10000 $1.51
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    STMicroelectronics STF18N60M2

    MOSFET N-CH 600V 13A TO220FP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey STF18N60M2 Tube 1,002 1
    • 1 $2.38
    • 10 $2.38
    • 100 $1.5754
    • 1000 $1.13106
    • 10000 $0.99988
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    Mouser Electronics STF18N60M2 711
    • 1 $2.38
    • 10 $1.77
    • 100 $1.57
    • 1000 $1.12
    • 10000 $1.03
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    STMicroelectronics STB18N60DM2

    MOSFET N-CH 600V 12A D2PAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey STB18N60DM2 Reel 1,000 1,000
    • 1 -
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    • 1000 $1.21109
    • 10000 $1.10728
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    STB18N60DM2 Cut Tape 780 1
    • 1 $2.55
    • 10 $2.119
    • 100 $1.6869
    • 1000 $1.42736
    • 10000 $1.42736
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    Mouser Electronics STB18N60DM2 1,444
    • 1 $2.62
    • 10 $2.18
    • 100 $1.73
    • 1000 $1.24
    • 10000 $1.14
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    TME STB18N60DM2 1
    • 1 $2.5
    • 10 $2.08
    • 100 $1.66
    • 1000 $1.4
    • 10000 $1.4
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    Vishay Siliconix SIHA18N60E-GE3

    N-CHANNEL 600V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIHA18N60E-GE3 Cut Tape 982 1
    • 1 $3.05
    • 10 $2.562
    • 100 $2.0725
    • 1000 $1.84224
    • 10000 $1.84224
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    Find more 18N60 price and stock on Findchips.com

    18N60 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Type PDF
    18N-60 Inmet ATTENUATOR Scan PDF
    18N-60F Inmet ATTENUATOR Scan PDF
    18N60G-T47-T Unisonic Technologies POLARHV HIPERFET POWER MOSFET Original PDF
    18N60L-T47-T Unisonic Technologies POLARHV HIPERFET POWER MOSFET Original PDF
    18N60-T47-T Unisonic Technologies POLARHV HIPERFET POWER MOSFET Original PDF

    18N60 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: VDSS = 600 V ID25 = 18 A Ω RDS on ≤ 420 mΩ IXTQ 18N60P IXTV 18N60P IXTV 18N60PS PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF 18N60P 18N60PS 18N60P

    18N60

    Abstract: 18N60G-T47-T 18N60L-T47-T 18N60-T47-T 408M power mosfet 600v
    Text: UNISONIC TECHNOLOGIES CO., LTD 18N60 Power MOSFET 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 18N60 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is


    Original     		PDF 18N60 18N60 O-247 18N60L 18N60G 18N60-T47-T QW-R502-221 18N60G-T47-T 18N60L-T47-T 18N60-T47-T 408M power mosfet 600v

    IXTV18N60P

    Abstract: PLUS220SMD
    Text: IXTQ 18N60P IXTV 18N60P IXTV 18N60PS PolarHVTM Power MOSFET VDSS ID25 = 600 V = 18 A ≤ 400 mΩ Ω RDS on N-Channel Enhancement Mode TO-3P (IXTQ) Symbol Test Conditions VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 600 V VGS Continuous


    Original     		PDF 18N60P 18N60PS PLUS220 IXTV18N60P 2005IXYS IXTV18N60P PLUS220SMD

    Untitled

    Abstract: No abstract text available
    Text: IXTQ 18N60P IXTT 18N60P PolarHVTM Power MOSFET VDSS ID25 RDS on = 600 V = 18 A ≤ 400 mΩ Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 600 V VGS Continuous


    Original     		PDF 18N60P 18N60P O-268 O-268 405B2

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 18N60 Power MOSFET 18A,600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 18N60 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is


    Original     		PDF 18N60 18N60 O-247 QW-R502-221

    PLUS220SMD

    Abstract: No abstract text available
    Text: IXTQ 18N60P IXTV 18N60P IXTV 18N60PS PolarHVTM Power MOSFET VDSS = 600 V ID25 = 18 A Ω RDS on ≤ 420 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF 18N60P 18N60PS 18N60P PLUS220SMD

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 18N60 Power MOSFET 18A,600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 18N60 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is


    Original     		PDF 18N60 18N60 18N60Lat QW-R502-221

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 18N60 Power MOSFET 18A,600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 18N60 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is


    Original     		PDF 18N60 18N60 O-247 18N60L-T47-T 18N60G-T47-T QW-R502-221

    N-channel MOSFET to-247

    Abstract: PLUS220SMD
    Text: PolarHVTM HiPerFET Power MOSFET IXFH 18N60P IXFV 18N60P IXFV 18N60PS VDSS ID25 RDS on trr = = ≤ ≤ 600 V 18 A Ω 400 mΩ 200 ns N-Channel Enhancement Mode Symbol Test Conditions VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF 18N60P 18N60PS O-247 PLUS220 15lts N-channel MOSFET to-247 PLUS220SMD

    18n60

    Abstract: 18N60-T47-T 18N60L-T47-T 18N60G-T47-T
    Text: UNISONIC TECHNOLOGIES CO., LTD 18N60 Preliminary Power MOSFET POLARHV HIPERFET POWER MOSFET „ DESCRIPTION The UTC 18N60 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is


    Original     		PDF 18N60 18N60 O-247 18N60L 18N60G 18N60-T47-T QW-R502-221 18N60-T47-T 18N60L-T47-T 18N60G-T47-T

    18N60

    Abstract: 18N60G-T47-T 18N60L-T47-T
    Text: UNISONIC TECHNOLOGIES CO., LTD 18N60 Power MOSFET 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 18N60 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is


    Original     		PDF 18N60 18N60 O-247 18N60L-T47-T 18N60G-T47-T QW-R502-221 18N60G-T47-T 18N60L-T47-T

    18N60P

    Abstract: PLUS220SMD IXFH18N60P 18N60PS 18N60
    Text: PolarHVTM HiPerFET Power MOSFET IXFH 18N60P IXFV 18N60P IXFV 18N60PS VDSS ID25 RDS on trr N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 600 V VGS


    Original     		PDF 18N60P 18N60PS 18N60P PLUS220SMD IXFH18N60P 18N60PS 18N60

    Untitled

    Abstract: No abstract text available
    Text: PolarHVTM HiPerFET Power MOSFET IXFH 18N60P IXFV 18N60P IXFV 18N60PS VDSS ID25 RDS on trr N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF 18N60P 18N60PS O-247 PLU30 18N60P

    18N60

    Abstract: 18N60G-T47-T 18N60L-T47-T mosfet 600V N-CHANNEL power mosfet 600v IAR18
    Text: UNISONIC TECHNOLOGIES CO., LTD 18N60 Power MOSFET 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 18N60 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is


    Original     		PDF 18N60 18N60 O-247 18N60L-T47-T 18N60G-T47-T QW-R502-221 18N60G-T47-T 18N60L-T47-T mosfet 600V N-CHANNEL power mosfet 600v IAR18

    STP18N60M2

    Abstract: No abstract text available
    Text: 18N60M2, 18N60M2, 18N60M2 N-channel 600 V, 0.255 Ω typ., 13 A MDmesh II Plus low Qg Power MOSFET in D2PAK, TO-220 and TO-247 packages Datasheet - production data Features TAB Order codes 3 1 2 VDS @ TJmax RDS on max ID 650 V 0.28 Ω 13 A D PAK


    Original     		PDF STB18N60M2, STP18N60M2, STW18N60M2 O-220 O-247 STB18N60M2 STP18N60M2 O-220 O-247 STP18N60M2

    18N60M2

    Abstract: No abstract text available
    Text: 18N60M2 045Y N-channel 600 V, 0.255 Ω typ., 13 A MDmesh II Plus low Qg Power MOSFET in a TO-220FP narrow leads package Datasheet − production data Features Order code VDS @ TJmax RDS(on) max ID 18N60M2(045Y) 650 V 0.28 Ω 13 A • Extremely low gate charge


    Original     		PDF STF18N60M2 O-220FP O-220FP DocID024730 18N60M2

    2n60p

    Abstract: gsm based speed control of single phase induction motor thyristor family 48N60 600v 20 amp mosfet 14n60 300V HiPerFET power MOSFET single die MOSFET Wireless A.C motor speed controlling system IXYS SCR MODULE Gate Drive 15N60P
    Text: 2005 / 1 IXYS NEWS MSC IGBT Module Line to include Economical Small 6Pack Incorporating Latest NPT3 and Trench IGBT Technologies IXYS announced that in keeping up with ambitious growth plans in the IGBT market, its European Operation, a leader in Direct Copper Bond


    Original     		PDF IXFR48N60P 18N60P 30N60P 22N60P 36N60P 26N60P 48N60P PLUS220 IXTV22N50PS. 2n60p gsm based speed control of single phase induction motor thyristor family 48N60 600v 20 amp mosfet 14n60 300V HiPerFET power MOSFET single die MOSFET Wireless A.C motor speed controlling system IXYS SCR MODULE Gate Drive 15N60P

    Untitled

    Abstract: No abstract text available
    Text: 18N60M2 N-channel 600 V, 0.255 Ω typ., 13 A MDmesh II Plus low Qg Power MOSFET in a TO-220FP package Datasheet − production data Features Order code VDS @ TJmax RDS on max ID 18N60M2 650 V 0.28 Ω 13 A • Extremely low gate charge 3 1 • Lower RDS(on) x area vs previous generation


    Original     		PDF STF18N60M2 O-220FP O-220FP DocID024729

    Untitled

    Abstract: No abstract text available
    Text: 18N60M2, 18N60M2, 18N60M2 N-channel 600 V, 0.255 Ω typ., 13 A MDmesh II Plus low Qg Power MOSFET in D2PAK, TO-220 and TO-247 packages Datasheet - production data Features TAB Order codes 3 1 2 D PAK VDS @ TJmax RDS on max ID 650 V 0.28 Ω 13 A


    Original     		PDF STB18N60M2, STP18N60M2, STW18N60M2 O-220 O-247 STB18N60M2 STP18N60M2 O-220 O-247

    Untitled

    Abstract: No abstract text available
    Text: 18N60M2 045Y N-channel 600 V, 0.255 Ω typ., 13 A MDmesh II Plus low Qg Power MOSFET in a TO-220FP narrow leads package Datasheet − production data Features VDS @ TJmax RDS(on) max ID 18N60M2(045Y) 650 V 0.28 Ω 13 A • Extremely low gate charge


    Original     		PDF STF18N60M2 O-220FP O-220FP DocID024730

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		PDF MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2

    STW20N60

    Abstract: 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p
    Text: PolarHTTM 55V to 300V Standard Power MOSFETs Benefits of Polar HTTM and Polar HVTM This new “Polar” technology platform utilizes a patented proprietary cell design, as well as numerous process improvements that reduce RDS(on) by over 30% per unit area, while also reducing Qg by an equal


    Original     		PDF O-220, ISOPLUS220TM, O-247, ISOPLUS247TM, O-264, ISOPLUS264TM. PLUS220 ISOPLUS220TM PLUS220SMD O-252 STW20N60 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p