plessey inductors
Abstract: polysilicon resistor High Speed Amplifiers DS00105
Text: HJB Complementary Bipolar Process Data Sheet DS00105 / June 2010 HJB is a double polysilicon trench isolated complementary bipolar process for RF applications in the range 900MHz to 2.4GHz. Key parameters minimum geometry device NPN PNP fT 19 GHz 15GHz CJC
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DS00105
900MHz
15GHz
110/155/on
plessey inductors
polysilicon resistor
High Speed Amplifiers
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Frequency
Abstract: RLNA1218G22
Text: RF-LAMBDA RLNA1218G22 The power beyond expectations Wide Band Low Noise Amplifier 12GHz~18GHz Feature Gain: 25dB Typical Noise Figure: 1.6dB Typical P1dB Output Power: +16dBm Typical Supply Voltage: +12V @ 200mA 50 Ohm Matched Input / Output
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RLNA1218G22
12GHz
18GHz
16dBmÂ
200mA
Frequency
RLNA1218G22
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FTLX8511D3
Abstract: GR-1089-CORE IEC-61000-4-2
Text: 850nm XFP Multi-Mode for 10GbE / 10GFC Duplex XFP Transceiver RoHS6 Compliant Features Fully compliant to XFP MSA Rev.4.5 Support of IEEE 802.3ae 10GBASE-SR at 10.3125 Gbit/s Compliance to Fibre Channel 1200-M5-SN-l, 1200-M5E-SN-l, 1200-M6-SN-l at 10.51875Gbit/s
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850nm
10GbE
10GFC
10GBASE-SR
1200-M5-SN-l,
1200-M5E-SN-l,
1200-M6-SN-l
51875Gbit/s
FTLX8511D3
GR-1089-CORE
IEC-61000-4-2
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sn 16862
Abstract: EID1314-8
Text: EID1314-8 13.75-14.50 GHz 8-Watt Internally-Matched Power FET FEATURES • • • • • • • • 13.75-14.50 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +39.5 dBm Output Power at 1dB Compression 6.5 dB Power Gain at 1dB Compression 27% Power Added Efficiency
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EID1314-8
EID1314-8
sn 16862
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uhf modulator SSB ASK, PR ASK
Abstract: European 869MHz 49mhz transmitter and receiver VCO at 15GHZ isotropic antenna 49MHz FM transmitter practical circuit of FSK modulator 49MHz FM transceiver modulator at 15GHz pll fsk MODULATOR
Text: TA0028 TA0028 RF2905/2915/2925: Silicon Transceiver Family for Low-Power Wireless Communications A family of low-power RF transceivers has been developed for wireless data communications devices operating in the European 433MHz to 869MHz ISM bands
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TA0028
RF2905/2915/2925:
433MHz
869MHz
902MHz
928MHz
15GHz
uhf modulator SSB ASK, PR ASK
European 869MHz
49mhz transmitter and receiver
VCO at 15GHZ
isotropic antenna
49MHz FM transmitter
practical circuit of FSK modulator
49MHz FM transceiver
modulator at 15GHz
pll fsk MODULATOR
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EID1314-5
Abstract: No abstract text available
Text: EID1314-5 13.75-14.50 GHz 5-Watt Internally-Matched Power FET FEATURES • • • • • • • • 13.75-14.50 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +37.5 dBm Output Power at 1dB Compression 7.5 dB Power Gain at 1dB Compression 35% Power Added Efficiency
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EID1314-5
EID1314-5
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EIC1314-4
Abstract: No abstract text available
Text: EIC1314-4 13.75-14.50 GHz 4-Watt Internally-Matched Power FET FEATURES • • • • • • • • 13.75-14.50 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +36.0 dBm Output Power at 1dB Compression 6.0 dB Power Gain at 1dB Compression 25% Power Added Efficiency
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EIC1314-4
EIC1314-4
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EID1414-5
Abstract: No abstract text available
Text: EID1414-5 14.00-14.50 GHz 5-Watt Internally-Matched Power FET FEATURES • • • • • • • • 14.00-14.50 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +37.5 dBm Output Power at 1dB Compression 7.5 dB Power Gain at 1dB Compression 35% Power Added Efficiency
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EID1414-5
EID1414-5
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EIC1314-4
Abstract: EIC1414-4
Text: EIC1414-4 14.00-14.50 GHz 4-Watt Internally-Matched Power FET FEATURES • • • • • • • • 14.00-14.50 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +36.0 dBm Output Power at 1dB Compression 6.0 dB Power Gain at 1dB Compression 25% Power Added Efficiency
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EIC1414-4
EIC1414-4
EIC1314-4
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sn 16862
Abstract: pt 2097
Text: EID1314-8 13.75-14.50 GHz 8-Watt Internally-Matched Power FET FEATURES • • • • • • • • 13.75-14.50 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +39.5 dBm Output Power at 1dB Compression 6.5 dB Power Gain at 1dB Compression 27% Power Added Efficiency
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EID1314-8
EID1314-8
50GHz
sn 16862
pt 2097
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Untitled
Abstract: No abstract text available
Text: EID1314-5 13.75-14.50 GHz 5-Watt Internally-Matched Power FET FEATURES • • • • • • • • 13.75-14.50 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +37.5 dBm Output Power at 1dB Compression 7.5 dB Power Gain at 1dB Compression 35% Power Added Efficiency
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EID1314-5
EID1314-5
50GHz
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Untitled
Abstract: No abstract text available
Text: EID1414-8 14.00-14.50 GHz 8-Watt Internally-Matched Power FET FEATURES • • • • • • • • 14.00-14.50 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +39.5 dBm Output Power at 1dB Compression 6.5 dB Power Gain at 1dB Compression 27% Power Added Efficiency
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EID1414-8
EID1414-8
50GHz
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PDF
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Untitled
Abstract: No abstract text available
Text: EID1414-5 14.00-14.50 GHz 5-Watt Internally-Matched Power FET FEATURES • • • • • • • • 14.00-14.50 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +37.5 dBm Output Power at 1dB Compression 7.5 dB Power Gain at 1dB Compression 35% Power Added Efficiency
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EID1414-5
EID1414-5
50GHz
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EID1414-5
Abstract: No abstract text available
Text: EID1414A1-5 UPDATED 07/12/2007 14.00-14.50 GHz 5-Watt Internally-Matched Power FET FEATURES • • • • • • • 14.00-14.50 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +37.5 dBm Output Power at 1dB Compression 7.5 dB Power Gain at 1dB Compression
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EID1414A1-5
EID1414A1-5
50GHz
EID1414-5
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transistor 1346
Abstract: EID1414-8
Text: EID1414-8 14.00-14.50 GHz 8-Watt Internally-Matched Power FET FEATURES • • • • • • • • 14.00-14.50 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +39.5 dBm Output Power at 1dB Compression 6.5 dB Power Gain at 1dB Compression 27% Power Added Efficiency
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EID1414-8
EID1414-8
transistor 1346
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phemt transistor
Abstract: MAG 1832 EID1414-8
Text: EID1414A1-8 UPDATED 07/12/2007 14.00-14.50 GHz 8-Watt Internally-Matched Power FET FEATURES • • • • • • • 14.00-14.50 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +39.5 dBm Output Power at 1dB Compression 6.5 dB Power Gain at 1dB Compression
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EID1414A1-8
EID1414A1-8
50GHz
phemt transistor
MAG 1832
EID1414-8
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EIC1414-4
Abstract: 175C EIC1314-4
Text: EIC1414-4 14.00-14.50GHz 4-Watt Internally-Matched Power FET UPDATED 08/21/2007 FEATURES • • • • • • • 14.00 –14.50GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +36.0 dBm Output Power at 1dB Compression 6.0 dB Power Gain at 1dB Compression
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EIC1414-4
50GHz
50GHz
1100mA
50Gystems
EIC1414-4
175C
EIC1314-4
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Untitled
Abstract: No abstract text available
Text: jU L 6 «* HITTITE MICROWAVE CORPORATION GaAs MMIC Voltage-Variable Attenuator HMC121 PRELIMINARY D ATASHEET, APRIL 1992 Features WIDE BANDWIDTH: DC-15GHZ LOW PHASE SHIFT VS ATTENUATION 30dB ATTENUATION RANGE Typical Performance SIMPLIFIED VOLTAGE CONTROL
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HMC121
DC-15GHZ
HMC121
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DSH3
Abstract: No abstract text available
Text: R E V IS IO N S M E C H A N IC A L ?0 Inte r Face D im ensions M IL-STD-3 4 0A. F re q u e n c y Range <GHz DC to 15 V o lt R ating VRMS MAXI 9 S ea Leve l V 5 WR 335 DC - 12 ¿GHz 1 2 * - 15GHz Fig 310 2 (DSH3 & 304 2 (N) Recom m enced Mattng T o rq u e
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A1203
Abstract: JS8853-AS
Text: TOSHIBA M IC R O W A V E P O W E R MICROWAVE SEMICONDUCTOR GaAs FET JS8853-AS TECHNICAL DATA FEATURES: • HIG H POW ER PldB = 28.0 dBm at f — 15 G Hz ■ SUITABLE FOR Ku-BAND , JOIM IM PLANTATIO N ■ HIG H GAIN GldB = 7 .0 dB at f = 15 G Hz ■ CHIP FORM
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JS8853-AS
15GHz
18GHz
15GHz
A1203
JS8853-AS
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET JS8850A-AS MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES: • ■ SUITABLE FOR Ku-BAND AMPLIFIER ION IM PLANTATIO N CH IP FORM H IG H POW ER p1dB = 2 1 5 dBm at f = 15 G H z H IG H G AIN GjdB = 9 '0 dB at f = 15 GHz RF PERFORMANCE SPECIFICATIONS Ta = 25° C
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JS8850A-AS
18GHz
15GHz
15GHz
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2sk270
Abstract: 2SJ96 2SK272 2SJ92 2SK260 2SK286 2SK247 2SK389 2SJ91 2SK261
Text: - 40 - 41 - % m tí & Ta=25'C u Cis (typ) (p F) Crs (typ) (pF) Vg s (V) typ max dB dB Vd s (V) f (Hz) Re <Q) R d s (ON) (max) Vg s (V) (0) •£ <D f& fé '14 Id (A) m £ & yfu 5* & m n m 10 82B SDG 2SK24G 7. 5 5 105A SDG 2SK247 800 -5 10 1.12 15 4 28A GDS
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2SK246
2SK247
2SK258
2SK259W)
2SK278
45GHztyp
2SK279
15GHz
2SK280
10dBtyp
2sk270
2SJ96
2SK272
2SJ92
2SK260
2SK286
2SK389
2SJ91
2SK261
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2SJ99
Abstract: 2SK354 2SK336 2sk3542 2SK356 2SK347 2SK354A 2SK353 2SK345 2sk351
Text: - 44 - m ? S £ tt m € ìà m & nu Ì i]/ K 2SK331 V * tt $ ft * (V) X I* (A) ft * P d /P c h g m Vg s (V) 100m (min) (max) V d s (A) (A) (V) (min) (max) V d s (V) (V) (V) C—MIC J N 1) -20 GDO 10m G 0.06m 1. 5m 10 2SK332 H # Diff J N D -40 GDS 10m G 0. 2/CH
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2SK331
2SK332
2SK333
2SK334
2SK336
2SK337
2SK354
8/12GHz
2SK354A
2SK355
2SJ99
2SK354
2sk3542
2SK356
2SK347
2SK354A
2SK353
2SK345
2sk351
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HT-1-3
Abstract: No abstract text available
Text: m icRouinvE c o íiip o íie íít s DC to 15.0GHz Stripline Terminations Internally Mounted C L 353 □ GENERAL FEATURES i This term ination fo r stripline installation (HT-type) is a complete ultracom pact stripline term ination com bining our company's ultracom pact resistor
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HT-025-1,
HT-025-2,
HT-05-2,
HT-50-1
HT-025-1
HT-025-2
HT-05-2
HT-30-1
HT-20-3
HT-10-2
HT-1-3
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