2SK337 Search Results

k3374

Abstract: 2SK3374
Contextual Info: 2SK3374 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3374 Switching Regulator Applications • Unit: mm Low drain-source ON resistance: RDS (ON) = 4.0 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 0.8 S (typ.) • Low leakage current: IDSS = 100 µA (max) (VDS = 450 V)

2SK3373

Contextual Info: 2SK3373 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSV 2SK3373 Switching Regulator and DC/DC Converter Applications Motor Drive Applications Unit: mm 1.5 ± 0. 2 6.5 ± 0.2 High forward transfer admittance: |Yfs| = 1.7 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 500 V)

2SK3371

Abstract: 53-common
Contextual Info: 2SK3371 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSV 2SK3371 Switching Regulator Applications Unit: mm 5.2 ± 0.2 Features 5.5 ± 0.2 Low drain-source ON-resistance: RDS (ON) = 6.4 Ω (typ.) High forward transfer admittance: |Yfs| = 0.85 S (typ.)

2SK3377

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3377 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3377 is N-Channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3377 TO-251 MP-3 2SK3377-Z TO-252 (MP-3Z) designed for high current switching applications.

2SK3377

Abstract: D1432 2SK3377-Z 2SK3377-Z equivalent
Contextual Info: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR 2SK3377 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3377 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3372 Silicon N-Channel Junction FET For impedance conversion in low frequency For electret capacitor microphone • Package ■ Features • Code SSSMini3-F1

K3373

Abstract: 2SK3373 toshiba marking code transistor
Contextual Info: 2SK3373 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSV 2SK3373 Switching Regulator and DC/DC Converter Applications Motor Drive Applications • Low drain-source ON-resistance: RDS (ON) = 2.9 mΩ (typ.) • High forward transfer admittance: |Yfs| = 1.7 S (typ.)

k3374

Abstract: 2SK3374
Contextual Info: 2SK3374 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3374 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 4.0 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 0.8 S (typ.) •

2SK3378ENTL

Contextual Info: 2SK3378 Silicon N Channel MOS FET High Speed Switching REJ03G1599-0200 Previous: ADE-208-805 Rev.2.00 Oct 23, 2007 Features • Low on-resistance RDS = 2.7 Ω typ. (VGS = 10 V, ID = 50 mA) RDS = 4.7 Ω typ. (VGS = 4 V, ID = 20 mA) • 4 V gate drive device.

Contextual Info: 2SK3376TV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3376TV For ECM Unit: mm VGDO -20 V IG 10 mA Drain power dissipation Ta = 25°C PD 100 mW Tj 125 °C Tstg −55~125 °C Storage temperature range 0.4 0.4 2 0.3±0.05 3 Unit Gate Current

K3371

Contextual Info: 2SK3371 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSV 2SK3371 Switching Regulator Applications Unit: mm Features • • • • Low drain-source ON-resistance: RDS (ON) = 6.4 Ω (typ.) High forward transfer admittance: |Yfs| = 0.85 S (typ.)

2SK3371

Contextual Info: 2SK3371 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSV 2SK3371 Switching Regulator Applications Unit: mm Features • • • • Low drain-source ON-resistance: RDS (ON) = 6.4 Ω (typ.) High forward transfer admittance: |Yfs| = 0.85 S (typ.)

2SK3372

Abstract: ED-4701 3gv2
Contextual Info: Silicon Junction FETs Small Signal 2SK3372 Silicon N-Channel Junction FET Unit: mm 0.10+0.05 –0.02 0.33+0.05 –0.02 For impedance conversion in low frequency For electret capacitor microphone 0.15 min. 5˚ • Features 1.20±0.05 0.80±0.05 3 2 0.15 min.

2SK3373

Abstract: K3373 k337
Contextual Info: 2SK3373 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSV 2SK3373 Switching Regulator and DC/DC Converter Applications Motor Drive Applications • Low drain-source ON-resistance: RDS (ON) = 2.9 mΩ (typ.) • High forward transfer admittance: |Yfs| = 1.7 S (typ.)

K3371

Abstract: 2SK3371 2SK3371,K3371
Contextual Info: 2SK3371 東芝電界効果トランジスタ シリコンNチャネルMOS形 π-MOS V 2SK3371 ○ スイッチングレギュレータ用 単位: mm 1.7 ± 0. 2 6.8 MAX. 5.2 ± 0. 2 0.95 MAX. 0.6 ± 0.15 絶対最大定格 (Ta = 25°C) 項 目 記 号 定

D1432

Abstract: M2SK3377 2SK3377 2SK3377-Z
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3377 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3377 is N-Channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3377 TO-251 2SK3377-Z TO-252 designed for high current switching applications.

Contextual Info: 2SK3376TV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3376TV For ECM Unit: mm Application for Ultra-compact ECM 1.2±0.05 Rating VGDO -20 V IG 10 mA Drain power dissipation Ta = 25°C PD 100 mW Tj 125 °C Tstg −55~125 °C Storage temperature range

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3372 Silicon N-Channel Junction FET Unit: mm 0.10+0.05 –0.02 0.33+0.05 –0.02 For impedance conversion in low frequency For electret capacitor microphone

Contextual Info: IC SMD Type Product specification 2SK3377 TO-252 Low Ciss : Ciss = 760 pF TYP. +0.1 0.80-0.1 Built-in gate protection diode 2.3 +0.1 0.60-0.1 3.80 MAX. VGS = 4.0 V, ID = 10 A +0.8 0.50-0.7 +0.15 5.55-0.15 RDS(on)2 = 78 m Unit: mm +0.1 2.30-0.1 0.127 max

k3374

Abstract: 2SK3374
Contextual Info: 2SK3374 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type F-MOSV 2SK3374 Switching Regulator Applications • Unit: mm Low drain-source ON resistance: RDS (ON) = 4.0 W (typ.) · High forward transfer admittance: ïYfsï = 0.8 S (typ.) · Low leakage current: IDSS = 100 µA (max) (VDS = 450 V)

2SK3376TK

Contextual Info: 2SK3376TK 東芝ジャンクション ＦＥＴ シリコンＮチャネル接合形 2SK3376TK エレクトレットコンデンサマイクロフォン用 単位: mm 0.9±0.1 絶対最大定格 Ta=25℃ 1.2±0.05 0.32±0.05 0.45 0.45 0.22±0.05 0.395mm 厚薄型パッケージのため薄型マイクロフォンに最適

Contextual Info: 2SK3373 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3373 Switching Regulator and DC-DC Converter Applications Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 2.9 mΩ (typ.) • High forward transfer admittance: |Yfs| = 1.7 S (typ.)

K3371

Contextual Info: 2SK3371 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3371 Switching Regulator Applications Unit: mm Features • • • • Low drain-source ON resistance: RDS (ON) = 6.4 Ω (typ.) High forward transfer admittance: |Yfs| = 0.85 S (typ.)

2SK3377-Z equivalent

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3377 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3377 is N-Channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3377 TO-251 2SK3377-Z TO-252 designed for high current switching applications.