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plessey inductors Abstract: polysilicon resistor High Speed Amplifiers DS00105 Text: HJB Complementary Bipolar Process Data Sheet DS00105 / June 2010 HJB is a double polysilicon trench isolated complementary bipolar process for RF applications in the range 900MHz to 2.4GHz. Key parameters minimum geometry device NPN PNP fT 19 GHz 15GHz CJC	Original	PDF	DS00105 900MHz 15GHz 110/155/on plessey inductors polysilicon resistor High Speed Amplifiers
DS-00105 Abstract: 2417J4A EIA-625 Text: Data Sheet, Rev. 1 August 2001 NetLight 2417J4A 1300 nm Laser Gigabit Transceiver • TTL signal-detect output ■ Low power dissipation ■ Single 3.3 V power supply ■ Raised ECL LVPECL logic data interfaces ■ ■ Operating temperature range: 0 °C to	Original	PDF	2417J4A RJ-45 1000Base-LX 1000Base-LX 10-pin recep3201 DS00-105OPTO-1 DS00-105OPTO) DS-00105 EIA-625
MT1570 Abstract: MT2170 Microtune mt2170 Microtune mt1570 DS-00105 AN-0001 CATV Amplifier Application microtune docsis 2.0 docsis "docsis 3.0" Text: Product Brief MT1570 DOCSIS 3.0 Upstream Amplifier DESIGNED FOR DOCSIS 3.0 HIGH TRANSMIT POWER. Related Product Information: • Press Release • Related Products • Order Information • Cable Product Selector Guide AND DOCSIS 2.0 MODEMS REQUIRING DESCRIPTION	Original	PDF	MT1570 MT1570 MT2170 Microtune mt2170 Microtune mt1570 DS-00105 AN-0001 CATV Amplifier Application microtune docsis 2.0 docsis "docsis 3.0"
EIA-625 Abstract: 2417J4A TA-TSY-000983 TR-NWT-000468 Text: Data Sheet January 2000 NetLight 2417J4A 1300 nm Laser Gigabit Transceiver • Transmitter disable input ■ Wide dynamic range receiver with InGaAs PIN photodetector ■ TTL signal-detect output ■ Low power dissipation ■ Single +3.3 V power supply	Original	PDF	2417J4A RJ-45 1000BaseLX 1000Base-LX DS00-105OPTO DS99-204LWP) EIA-625 TA-TSY-000983 TR-NWT-000468