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Rochester Electronics LLC 2SK3348CNTL-E N-CHANNEL MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SK3348CNTL-E	Bulk			1,664	1 - 10 - 100 - 1000 - 10000 $0.18	Buy Now
Toshiba America Electronic Components 2SK3342(TE16L1,NQ) MOSFET N-CH 250V 4.5A PW-MOLD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SK3342(TE16L1,NQ)	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Quest Components	2SK3342(TE16L1,NQ)		846			1 $0.85 10 $0.85 100 $0.85 1000 $0.34 10000 $0.34	Buy Now
Renesas Electronics Corporation 2SK3348CNTL-E 2SK3348CNTL-E
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	2SK3348CNTL-E		27,000		1,731	1 - 10 - 100 - 1000 - 10000 $0.2168	Buy Now
Rochester Electronics	2SK3348CNTL-E		27,000		1	1 - 10 - 100 $0.1734 1000 $0.1439 10000 $0.1283	Buy Now
Toshiba America Electronic Components 2SK3342(T6L1MURATQ
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	2SK3342(T6L1MURATQ		6,745			1 $0.83 10 $0.83 100 $0.83 1000 $0.83 10000 $0.249	Buy Now

2SK334 Datasheets (29)

Part	Manufacturer	Description	Datasheet Type	PDF
2SK334	Unknown	FET Data Book	Scan	PDF
2SK334	Unknown	General Purpose Transistors	Scan	PDF
2SK334	Sanyo Semiconductor	Sanyo Datasheets, Cross References and Circuit Examples	Scan	PDF
2SK334	Sanyo Semiconductor	Silicon N-Channel Junction-Type Field Effect TR For CONDENSER MICROPHONES	Scan	PDF
2SK3340-01	Fuji Electric	MOSFET / Power MOSFET Selection Guide	Original	PDF
2SK3340-01	Fuji Electric	N-CHANNEL SILICON POWER MOS-FET	Original	PDF
2SK3341-01	Fuji Electric	N-Channel Silicon Power MOSFET	Original	PDF
2SK3341-01	Fuji Electric	MOSFET / Power MOSFET Selection Guide	Original	PDF
2SK3342	Toshiba	2SK3342 - TRANSISTOR 4.5 A, 250 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, 2-7J1B, 3 PIN, FET General Purpose Power	Original	PDF
2SK3342	Toshiba	Power MOSFET Selection Guide with Cross Reference Data	Original	PDF
2SK3342	Toshiba		Scan	PDF
2SK3342(2-7B1B)	Toshiba	2SK3342 - TRANSISTOR 4.5 A, 250 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, 2-7B1B, SC-64, 3 PIN, FET General Purpose Power	Original	PDF
2SK3342(2-7B2B)	Toshiba	2SK3342 - TRANSISTOR 4.5 A, 250 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, 2-7B12, SC-64, 3 PIN, FET General Purpose Power	Original	PDF
2SK3342(2-7J1B)	Toshiba	2SK3342 - TRANSISTOR 4.5 A, 250 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, 2-7J1B, 3 PIN, FET General Purpose Power	Original	PDF

2SK3342(TE16L1,NQ)	Toshiba	2SK3342 - MOSFET N-CH 250V 4.5A SC-64	Original	PDF
2SK3348	Hitachi Semiconductor	Silicon N Channel MOS FET High Speed Switching	Original	PDF
2SK3348	Hitachi Semiconductor	Silicon N Channel MOS FET	Original	PDF
2SK3348	Renesas Technology	Silicon N Channel MOS FET High Speed Switching	Original	PDF
2SK3348	Renesas Technology	Silicon N Channel MOS FET High Speed Switching	Original	PDF
2SK3349	Hitachi Semiconductor	Silicon N Channel MOS FET	Original	PDF

2SK334 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: 2SK3341-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings	Original	2SK3341-01	PDF
Contextual Info: 2SK3341-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET 11.6±0.2 Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply DC-DC converters	Original	2SK3341-01	PDF
Hitachi DSA002753 Contextual Info: 2SK3348 Silicon N Channel MOS FET High Speed Switching ADE-208-772 A Z 2nd.Edition. June 1999 Features • • • Low on-resistance RDS = 1.6 Ω typ. (VGS = 4 V , ID = 50 mA) RDS = 2.2 Ω typ. (VGS = 2.5 V , ID = 50 mA) 2.5 V gate drive device. Small package (CMPAK)	Original	2SK3348 ADE-208-772 2SK3348 Hitachi DSA002753	PDF
Contextual Info: 2SK3342 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK3342 Unit: mm : \|Yfs\| = 4.5 S (typ.) 1.5 ± 0. 2 5.5 ± 0. 2 : RDS (ON) = 0.8 Ω (typ.) z High forward transfer admittance 1.2 MAX. z Low drain-source ON resistance 6.5 ± 0.2	Original	2SK3342	PDF
K3342 Abstract: 2SK3342 Contextual Info: 2SK3342 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK3342 Unit: mm Switching Regulator and DC-DC Converter Applications Motor Drive Applications z Low drain-source ON resistance : RDS (ON) = 0.8 Ω (typ.) z High forward transfer admittance	Original	2SK3342 K3342 2SK3342	PDF
2SK3341-01 equivalent Abstract: 2SK3341-01 2sk3341 Contextual Info: 2SK3341-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET 11.6±0.2 Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply DC-DC converters	Original	2SK3341-01 2SK3341-01 equivalent 2SK3341-01 2sk3341	PDF
k3342 Abstract: 2sk3342 2-7J1B Contextual Info: 2SK3342 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π−MOSV 2SK3342 Switching Regulator and DC/DC Converter Applications Motor Drive Applications Low drain-source ON-resistance : RDS (ON) = 0.8 Ω (typ.) High forward transfer admittance	Original	2SK3342 k3342 2sk3342 2-7J1B	PDF
Contextual Info: 2SK3341-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET 11.6±0.2 Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply DC-DC converters	Original	2SK3341-01	PDF
K3342 Abstract: 2SK3342 Contextual Info: 2SK3342 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK3342 Unit: mm : \|Yfs\| = 4.5 S (typ.) 1.5 ± 0. 2 5.5 ± 0. 2 : RDS (ON) = 0.8 Ω (typ.) z High forward transfer admittance 1.2 MAX. z Low drain-source ON resistance 6.5 ± 0.2	Original	2SK3342 K3342 2SK3342	PDF
Contextual Info: TOSHIBA 2SK3342 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SV 2SK3342 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS SWITCHING REGULATOR APPLICATIONS, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm	OCR Scan	2SK3342	PDF
2SK3102-01R Abstract: 2sk3102 2SK2850 2SK2640 2SK3264 2SK2640 equivalent 2SK2645 2SK3264-01MR 2sk3102-01 2SK2648 equivalent Contextual Info: パワーMOSFET / Power MOSFETs • パワーMOSFET Power MOSFET FAP-IIS シリーズ FAP-IIS series 高温・連続アバランシェ耐量保証 Repetitive avalanche rated 形式 Device type 2SK3340-01 2SK2870-01L, S 2SK2871-01 2SK2872-01MR 2SK2873-01	Original	2SK3340-01 2SK2870-01L, 2SK2871-01 2SK2872-01MR 2SK2873-01 2SK2638-01MR 2SK2639-01 2SK2754-01L, 2SK2755-01 2SK2756-01R 2SK3102-01R 2sk3102 2SK2850 2SK2640 2SK3264 2SK2640 equivalent 2SK2645 2SK3264-01MR 2sk3102-01 2SK2648 equivalent	PDF
Hitachi DSA002753 Contextual Info: 2SK3349 Silicon N Channel MOS FET High Speed Switching ADE-208-804 Z 1st.Edition. June 1999 Features • • • Low on-resistance RDS = 2.8 Ω typ. (at VGS = 4 V , ID = 25 mA) RDS = 4.8 Ω typ. (at VGS = 2.5 V , ID = 10 mA) 2.5 V gate drive device Small package (SMPAK)	Original	2SK3349 ADE-208-804 2SK3349 Hitachi DSA002753	PDF
k3342 Abstract: 2SK3342 TC4025 Contextual Info: 2SK3342 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK3342 Unit: mm Switching Regulator and DC-DC Converter Applications Motor Drive Applications : \|Yfs\| = 4.5 S (typ.) 1.7 ± 0. 2 5.5 ± 0.2 : RDS (ON) = 0.8 Ω (typ.) z High forward transfer admittance	Original	2SK3342 k3342 2SK3342 TC4025	PDF
2SK3348 Abstract: Hitachi DSA00397 Contextual Info: 2SK3348 Silicon N Channel MOS FET High Speed Switching ADE-208-772 A Z 2nd.Edition. June 1999 Features • Low on-resistance R DS = 1.6 Ω typ. (VGS = 4 V , ID = 50 mA) R DS = 2.2 Ω typ. (VGS = 2.5 V , I D = 50 mA) • 2.5 V gate drive device. • Small package (CMPAK)	Original	2SK3348 ADE-208-772 2SK3348 Hitachi DSA00397	PDF

K3342 Abstract: 2SK3342 Contextual Info: 2SK3342 東芝電界効果トランジスタシリコンNチャネルMOS形 π−MOSⅤ 2SK3342 単位: mm ○ スイッチングレギュレータ用 ○ DC−DC コンバータ用 ○ モータドライブ用 0.8 MAX. : Vth = 1.5～3.5 V (VDS = 10 V, ID = 1 mA)	Original	2SK3342 K3342 2SK3342	PDF
Contextual Info: 2SK3340-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings	Original	2SK3340-01	PDF
Contextual Info: 2SK3340-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET Features 11.6±0.2 High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply DC-DC converters	Original	2SK3340-01	PDF
2SK334 Abstract: B00J TT 25 N12 Contextual Info: 2SK334 KO.C933B S ilic o n N-Channel Junction-Type F ie ld E ffe c t TR F or Co n d e n s e r Mic r o p h o n e s SAM VO FEATURE • Because it has an u ltra -c o m p a c t o u tlin e . s t b can be made c o m p a c t ABSOLUTE MAXIMUM RATINGS/T* Drain-gate current	OCR Scan	C9338 2075KI 2SK334 2SK334 B00J TT 25 N12	PDF
2SK3349 Abstract: DSA003644 Contextual Info: 2SK3349 Silicon N Channel MOS FET High Speed Switching ADE-208-804 Z 1st.Edition. June 1999 Features • Low on-resistance R DS = 2.8 typ. (at V GS = 4 V , ID = 25 mA) R DS = 4.8 typ. (at V GS = 2.5 V , I D = 10 mA) • 2.5 V gate drive device • Small package (SMPAK)	Original	2SK3349 ADE-208-804 2SK3349 DSA003644	PDF
k3342 Contextual Info: 2SK3342 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK3342 Unit: mm Switching Regulator and DC-DC Converter Applications Motor Drive Applications  Low drain-source ON resistance : RDS (ON) = 0.8 Ω (typ.)  High forward transfer admittance	Original	2SK3342 k3342	PDF
k3342 Contextual Info: 2SK3342 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK3342 Switching Regulator and DC-DC Converter Applications Motor Drive Applications Low drain-source ON resistance : RDS (ON) = 0.8 Ω (typ.) High forward transfer admittance	Original	2SK3342 k3342	PDF
2SK3349 Abstract: Hitachi DSA00395 Contextual Info: 2SK3349 Silicon N Channel MOS FET High Speed Switching ADE-208-804 Z 1st.Edition. June 1999 Features • Low on-resistance R DS = 2.8 Ω typ. (at VGS = 4 V , ID = 25 mA) R DS = 4.8 Ω typ. (at VGS = 2.5 V , I D = 10 mA) • 2.5 V gate drive device • Small package (SMPAK)	Original	2SK3349 ADE-208-804 2SK3349 Hitachi DSA00395	PDF
Contextual Info: 2SK3341-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings	Original	2SK3341-01	PDF
Contextual Info: 2SK3340-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings	Original	2SK3340-01	PDF

2SK334 Search Results

2SK334 Price and Stock

Rochester Electronics LLC 2SK3348CNTL-E

Toshiba America Electronic Components 2SK3342(TE16L1,NQ)

Renesas Electronics Corporation 2SK3348CNTL-E

Toshiba America Electronic Components 2SK3342(T6L1MURATQ

2SK334 Datasheets (29)

2SK334 Datasheets Context Search

Hitachi DSA002753

K3342

2SK3341-01 equivalent

k3342

K3342

2SK3102-01R

Hitachi DSA002753

k3342

2SK3348

K3342

2SK334

2SK3349

k3342

k3342

2SK3349

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