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    2SK334 Search Results

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    2SK334 Price and Stock

    Rochester Electronics LLC 2SK3348CNTL-E

    N-CHANNEL MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SK3348CNTL-E Bulk 2,029
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    Toshiba America Electronic Components 2SK3342(TE16L1,NQ)

    MOSFET N-CH 250V 4.5A PW-MOLD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SK3342(TE16L1,NQ) Reel
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    Quest Components 2SK3342(TE16L1,NQ) 846
    • 1 $0.85
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    Toshiba America Electronic Components 2SK3342(T6L1MURATQ

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2SK3342(T6L1MURATQ 6,745
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    Renesas Electronics Corporation 2SK3348CNTL-E

    2SK3348 - N-Channel MOSFET High Speed Switching '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics 2SK3348CNTL-E 27,000 1
    • 1 $0.1422
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    2SK334 Datasheets (29)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK334 Unknown FET Data Book Scan PDF
    2SK334 Unknown General Purpose Transistors Scan PDF
    2SK334 Sanyo Semiconductor Sanyo Datasheets, Cross References and Circuit Examples Scan PDF
    2SK334 Sanyo Semiconductor Silicon N-Channel Junction-Type Field Effect TR For CONDENSER MICROPHONES Scan PDF
    2SK3340-01 Fuji Electric MOSFET / Power MOSFET Selection Guide Original PDF
    2SK3340-01 Fuji Electric N-CHANNEL SILICON POWER MOS-FET Original PDF
    2SK3341-01 Fuji Electric N-Channel Silicon Power MOSFET Original PDF
    2SK3341-01 Fuji Electric MOSFET / Power MOSFET Selection Guide Original PDF
    2SK3342 Toshiba 2SK3342 - TRANSISTOR 4.5 A, 250 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, 2-7J1B, 3 PIN, FET General Purpose Power Original PDF
    2SK3342 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    2SK3342 Toshiba Scan PDF
    2SK3342(2-7B1B) Toshiba 2SK3342 - TRANSISTOR 4.5 A, 250 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, 2-7B1B, SC-64, 3 PIN, FET General Purpose Power Original PDF
    2SK3342(2-7B2B) Toshiba 2SK3342 - TRANSISTOR 4.5 A, 250 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, 2-7B12, SC-64, 3 PIN, FET General Purpose Power Original PDF
    2SK3342(2-7J1B) Toshiba 2SK3342 - TRANSISTOR 4.5 A, 250 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, 2-7J1B, 3 PIN, FET General Purpose Power Original PDF
    2SK3342(TE16L1,NQ) Toshiba 2SK3342 - MOSFET N-CH 250V 4.5A SC-64 Original PDF
    2SK3348 Hitachi Semiconductor Silicon N Channel MOS FET High Speed Switching Original PDF
    2SK3348 Hitachi Semiconductor Silicon N Channel MOS FET Original PDF
    2SK3348 Renesas Technology Silicon N Channel MOS FET High Speed Switching Original PDF
    2SK3348 Renesas Technology Silicon N Channel MOS FET High Speed Switching Original PDF
    2SK3349 Hitachi Semiconductor Silicon N Channel MOS FET Original PDF

    2SK334 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2SK3341-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings


    Original     		PDF 2SK3341-01

    Untitled

    Abstract: No abstract text available
    Text: 2SK3341-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET 11.6±0.2 Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply DC-DC converters


    Original     		PDF 2SK3341-01

    Hitachi DSA002753

    Abstract: No abstract text available
    Text: 2SK3348 Silicon N Channel MOS FET High Speed Switching ADE-208-772 A Z 2nd.Edition. June 1999 Features • • • Low on-resistance RDS = 1.6 Ω typ. (VGS = 4 V , ID = 50 mA) RDS = 2.2 Ω typ. (VGS = 2.5 V , ID = 50 mA) 2.5 V gate drive device. Small package (CMPAK)


    Original     		PDF 2SK3348 ADE-208-772 2SK3348 Hitachi DSA002753

    Untitled

    Abstract: No abstract text available
    Text: 2SK3342 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK3342 Unit: mm : |Yfs| = 4.5 S (typ.) 1.5 ± 0. 2 5.5 ± 0. 2 : RDS (ON) = 0.8 Ω (typ.) z High forward transfer admittance 1.2 MAX. z Low drain-source ON resistance 6.5 ± 0.2


    Original     		PDF 2SK3342

    K3342

    Abstract: 2SK3342
    Text: 2SK3342 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK3342 Unit: mm Switching Regulator and DC-DC Converter Applications Motor Drive Applications z Low drain-source ON resistance : RDS (ON) = 0.8 Ω (typ.) z High forward transfer admittance


    Original     		PDF 2SK3342 K3342 2SK3342

    2SK3341-01 equivalent

    Abstract: 2SK3341-01 2sk3341
    Text: 2SK3341-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET 11.6±0.2 Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply DC-DC converters


    Original     		PDF 2SK3341-01 2SK3341-01 equivalent 2SK3341-01 2sk3341

    k3342

    Abstract: 2sk3342 2-7J1B
    Text: 2SK3342 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π−MOSV 2SK3342 Switching Regulator and DC/DC Converter Applications Motor Drive Applications Low drain-source ON-resistance : RDS (ON) = 0.8 Ω (typ.) High forward transfer admittance


    Original     		PDF 2SK3342 k3342 2sk3342 2-7J1B

    Untitled

    Abstract: No abstract text available
    Text: 2SK3341-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET 11.6±0.2 Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply DC-DC converters


    Original     		PDF 2SK3341-01

    K3342

    Abstract: 2SK3342
    Text: 2SK3342 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK3342 Unit: mm : |Yfs| = 4.5 S (typ.) 1.5 ± 0. 2 5.5 ± 0. 2 : RDS (ON) = 0.8 Ω (typ.) z High forward transfer admittance 1.2 MAX. z Low drain-source ON resistance 6.5 ± 0.2


    Original     		PDF 2SK3342 K3342 2SK3342

    2SK3102-01R

    Abstract: 2sk3102 2SK2850 2SK2640 2SK3264 2SK2640 equivalent 2SK2645 2SK3264-01MR 2sk3102-01 2SK2648 equivalent
    Text: パワーMOSFET / Power MOSFETs • パワーMOSFET Power MOSFET FAP-IIS シリーズ FAP-IIS series 高温・連続アバランシェ耐量保証 Repetitive avalanche rated 形 式 Device type 2SK3340-01 2SK2870-01L, S 2SK2871-01 2SK2872-01MR 2SK2873-01


    Original     		PDF 2SK3340-01 2SK2870-01L, 2SK2871-01 2SK2872-01MR 2SK2873-01 2SK2638-01MR 2SK2639-01 2SK2754-01L, 2SK2755-01 2SK2756-01R 2SK3102-01R 2sk3102 2SK2850 2SK2640 2SK3264 2SK2640 equivalent 2SK2645 2SK3264-01MR 2sk3102-01 2SK2648 equivalent

    Hitachi DSA002753

    Abstract: No abstract text available
    Text: 2SK3349 Silicon N Channel MOS FET High Speed Switching ADE-208-804 Z 1st.Edition. June 1999 Features • • • Low on-resistance RDS = 2.8 Ω typ. (at VGS = 4 V , ID = 25 mA) RDS = 4.8 Ω typ. (at VGS = 2.5 V , ID = 10 mA) 2.5 V gate drive device Small package (SMPAK)


    Original     		PDF 2SK3349 ADE-208-804 2SK3349 Hitachi DSA002753

    k3342

    Abstract: 2SK3342 TC4025
    Text: 2SK3342 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK3342 Unit: mm Switching Regulator and DC-DC Converter Applications Motor Drive Applications : |Yfs| = 4.5 S (typ.) 1.7 ± 0. 2 5.5 ± 0.2 : RDS (ON) = 0.8 Ω (typ.) z High forward transfer admittance


    Original     		PDF 2SK3342 k3342 2SK3342 TC4025

    2SK3348

    Abstract: Hitachi DSA00397
    Text: 2SK3348 Silicon N Channel MOS FET High Speed Switching ADE-208-772 A Z 2nd.Edition. June 1999 Features • Low on-resistance R DS = 1.6 Ω typ. (VGS = 4 V , ID = 50 mA) R DS = 2.2 Ω typ. (VGS = 2.5 V , I D = 50 mA) • 2.5 V gate drive device. • Small package (CMPAK)


    Original     		PDF 2SK3348 ADE-208-772 2SK3348 Hitachi DSA00397

    Untitled

    Abstract: No abstract text available
    Text: 2SK3342 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK3342 Unit: mm Switching Regulator and DC-DC Converter Applications Motor Drive Applications z Low drain-source ON resistance : RDS (ON) = 0.8 Ω (typ.) z High forward transfer admittance


    Original     		PDF 2SK3342

    Untitled

    Abstract: No abstract text available
    Text: 2SK3340-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings


    Original     		PDF 2SK3340-01

    Untitled

    Abstract: No abstract text available
    Text: 2SK3340-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET Features 11.6±0.2 High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply DC-DC converters


    Original     		PDF 2SK3340-01

    2SK3349

    Abstract: DSA003644
    Text: 2SK3349 Silicon N Channel MOS FET High Speed Switching ADE-208-804 Z 1st.Edition. June 1999 Features • Low on-resistance R DS = 2.8 typ. (at V GS = 4 V , ID = 25 mA) R DS = 4.8 typ. (at V GS = 2.5 V , I D = 10 mA) • 2.5 V gate drive device • Small package (SMPAK)


    Original     		PDF 2SK3349 ADE-208-804 2SK3349 DSA003644

    k3342

    Abstract: No abstract text available
    Text: 2SK3342 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK3342 Unit: mm Switching Regulator and DC-DC Converter Applications Motor Drive Applications  Low drain-source ON resistance : RDS (ON) = 0.8 Ω (typ.)  High forward transfer admittance


    Original     		PDF 2SK3342 k3342

    k3342

    Abstract: No abstract text available
    Text: 2SK3342 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK3342 Switching Regulator and DC-DC Converter Applications Motor Drive Applications Low drain-source ON resistance : RDS (ON) = 0.8 Ω (typ.) High forward transfer admittance


    Original     		PDF 2SK3342 k3342

    2SK3349

    Abstract: Hitachi DSA00395
    Text: 2SK3349 Silicon N Channel MOS FET High Speed Switching ADE-208-804 Z 1st.Edition. June 1999 Features • Low on-resistance R DS = 2.8 Ω typ. (at VGS = 4 V , ID = 25 mA) R DS = 4.8 Ω typ. (at VGS = 2.5 V , I D = 10 mA) • 2.5 V gate drive device • Small package (SMPAK)


    Original     		PDF 2SK3349 ADE-208-804 2SK3349 Hitachi DSA00395

    Untitled

    Abstract: No abstract text available
    Text: 2SK3341-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings


    Original     		PDF 2SK3341-01

    Untitled

    Abstract: No abstract text available
    Text: 2SK3340-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings


    Original     		PDF 2SK3340-01

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SK3342 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SV 2SK3342 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS SWITCHING REGULATOR APPLICATIONS, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm


    OCR Scan     		PDF 2SK3342

    2SK334

    Abstract: B00J TT 25 N12
    Text: 2SK334 KO.C933B S ilic o n N-Channel Junction-Type F ie ld E ffe c t TR F or Co n d e n s e r Mic r o p h o n e s SAM VO FEATURE • Because it has an u ltra -c o m p a c t o u tlin e . s t b can be made c o m p a c t ABSOLUTE MAXIMUM RATINGS/T* Drain-gate current


    OCR Scan     		PDF C9338 2075KI 2SK334 2SK334 B00J TT 25 N12