2SK3310
Abstract: No abstract text available
Text: 2SK3310 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3310 Switching Regulator Applications • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.48 Ω (typ.) • High forward transfer admittance: |Yfs| = 4.3 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 450 V)
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2SK3310
2SK3310
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2SK3310
Abstract: K3310
Text: 2SK3310 東芝電界効果トランジスタ シリコンNチャネルMOS形 π-MOSV 2SK3310 単位: mm ○ スイッチングレギュレータ用 • : RDS (ON) = 0.48 Ω (標準) オン抵抗が低い。 • 順方向伝達アドミタンスが高い。 : |Yfs| = 4.3 S (標準)
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2SK3310
SC-67
2-10R1B
2SK3310
K3310
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k3313
Abstract: 2SK3313
Text: 2SK3313 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK3313 Chopper Regulatorand DC−DC Converter Applications Motor Drive Applications Fast reverse recovery time Unit: mm : trr = 90 ns (typ.) Built−in high−speed free−wheeling diode
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2SK3313
k3313
2SK3313
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k3314
Abstract: 2SK3314
Text: 2SK3314 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK3314 Chopper Regulator and DC−DC Converter Applications Motor Drive Applications z Fast reverse recovery time Unit: mm : trr = 105 ns (typ.) z Built-in high-speed free-wheeling diode
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2SK3314
k3314
2SK3314
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k3316
Abstract: 2SK3316
Text: 2SK3316 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK3316 Switching Regulator Applications z Fast reverse recovery time Unit: mm : trr = 60 ns (typ.) z Built-in high-speed free-wheeling diode z Low drain−source ON resistance
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2SK3316
k3316
2SK3316
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k3314
Abstract: No abstract text available
Text: 2SK3314 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK3314 Chopper Regulator and DC−DC Converter Applications Motor Drive Applications z Fast reverse recovery time Unit: mm : trr = 105 ns (typ.) z Built-in high-speed free-wheeling diode
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2SK3314
15HIBA
k3314
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Untitled
Abstract: No abstract text available
Text: 2SK3313 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK3313 Chopper Regulator, DC−DC Converter Applications Motor Drive Applications Fast reverse recovery time Unit: mm : trr = 90 ns (typ.) Built−in high−speed free−wheeling diode
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2SK3313
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Untitled
Abstract: No abstract text available
Text: 2SK3314 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK3314 Chopper Regulator, DC−DC Converter Applications Motor Drive Applications Fast reverse recovery time Unit: mm : trr = 105 ns (typ.) Built−in high−speed free−wheeling diode
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2SK3314
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Untitled
Abstract: No abstract text available
Text: 2SK3313 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK3313 Chopper Regulator, DC−DC Converter Applications Motor Drive Applications Fast reverse recovery time Unit: mm : trr = 90 ns (typ.) Built−in high−speed free−wheeling diode
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2SK3313
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K3314
Abstract: 2SK3314
Text: 2SK3314 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK3314 Chopper Regulator and DC−DC Converter Applications Motor Drive Applications z Fast reverse recovery time Unit: mm : trr = 105 ns (typ.) z Built-in high-speed free-wheeling diode
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2SK3314
K3314
2SK3314
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2SK3318
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3318 Silicon N-channel power MOSFET Unit: mm 5.0±0.2 15.0±0.3 (0.7) For switching 21.0±0.5 φ 3.2±0.1 • Absolute Maximum Ratings TC = 25°C Symbol Rating Unit VDSS 600 V
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2002/95/EC)
2SK3318
2SK3318
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k3314
Abstract: 2SK3314
Text: 2SK3314 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK3314 Chopper Regulator and DC−DC Converter Applications Motor Drive Applications z Fast reverse recovery time Unit: mm : trr = 105 ns (typ.) z Built-in high-speed free-wheeling diode
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2SK3314
k3314
2SK3314
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3318 Silicon N-channel power MOSFET Unit: mm 15.0±0.3 (0.7) For switching • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Drain-source surrender voltage VDSS
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2002/95/EC)
2SK3318
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2SK3318
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3318 Silicon N-channel power MOSFET Unit: mm 5.0±0.2 15.0±0.3 (0.7) For switching Parameter Symbol Rating Unit Drain-source surrender voltage VDSS 600 V Gate-source surrender voltage
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2002/95/EC)
2SK3318
2SK3318
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K3313
Abstract: 2SK3313
Text: 2SK3313 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK3313 Chopper Regulator and DC−DC Converter Applications Motor Drive Applications z Fast reverse recovery time Unit: mm : trr = 90 ns (typ.) z Built-in high-speed free-wheeling diode
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2SK3313
K3313
2SK3313
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2SK3313
Abstract: No abstract text available
Text: 2SK3313 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK3313 Chopper Regulator, DC−DC Converter Applications Motor Drive Applications l Fast reverse recovery time Unit: mm : trr = 90 ns (typ.) l Built−in high−speed free−wheeling diode
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2SK3313
2SK3313
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2SK3312
Abstract: D400T
Text: 2SK3312 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-−MOSV 2SK3312 Chopper Regulator, DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 0.9 Ω (typ.) z High forward transfer admittance : |Yfs| = 3.5 S (typ.)
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2SK3312
2SK3312
D400T
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k3314
Abstract: 2SK3314 SC-65 jeita sc-65
Text: 2SK3314 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅤ 2SK3314 ○ スイッチングレギュレータDC−DC コンバータ用 ○ モータドライブ用 単位: mm : trr = 105ns (標準) z 逆回復時間が速い。
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2SK3314
105ns
10VID
SC-65
2-16C1B
VDD400V,
K3314
k3314
2SK3314
SC-65
jeita sc-65
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2SK3312
Abstract: No abstract text available
Text: 2SK3312 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOS V 2SK3312 ○ スイッチングレギュレータ用 単位: mm : RDS (ON) = 0.9Ω(標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : |Yfs| = 3.5S (標準)
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2SK3312
10VID
2-10S1B
20070701-JA
2SK3312
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k3313
Abstract: 2SK3313
Text: 2SK3313 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK3313 Chopper Regulator and DC−DC Converter Applications Motor Drive Applications z Fast reverse recovery time Unit: mm : trr = 90 ns (typ.) z Built-in high-speed free-wheeling diode
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2SK3313
k3313
2SK3313
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k3314
Abstract: 2SK3314 SC-65
Text: 2SK3314 TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O S V 2SK3314 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS SWITCHING REGULATOR, DC-DC CONVERTER APPLICATIONS M OTO R DRIVE APPLICATIONS Fast Reverse Recovery Time INDUSTRIAL APPLICATIONS
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2SK3314
k3314
2SK3314
SC-65
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2SJ99
Abstract: 2SK354 2SK336 2sk3542 2SK356 2SK347 2SK354A 2SK353 2SK345 2sk351
Text: - 44 - m ? S £ tt m € ìà m & nu Ì i]/ K 2SK331 V * tt $ ft * (V) X I* (A) ft * P d /P c h g m Vg s (V) 100m (min) (max) V d s (A) (A) (V) (min) (max) V d s (V) (V) (V) C—MIC J N 1) -20 GDO 10m G 0.06m 1. 5m 10 2SK332 H # Diff J N D -40 GDS 10m G 0. 2/CH
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2SK331
2SK332
2SK333
2SK334
2SK336
2SK337
2SK354
8/12GHz
2SK354A
2SK355
2SJ99
2SK354
2sk3542
2SK356
2SK347
2SK354A
2SK353
2SK345
2sk351
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SK3316 TO SHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SV 2SK3316 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm SWITCHING REGULATOR APPLICATIONS TO-220 (NIS) 10 ± 0 .3 Fast Reverse Recovery Time
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2SK3316
O-220
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2SK3316
Abstract: k3316 2-10R1B
Text: TOSHIBA 2SK3316 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSV 2SK3316 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS SWITCHING REGULATOR APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm TO-220 (NIS) Fast Reverse Recovery Time : trr = 60 ns (Typ.)
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2SK3316
VDD-400V,
2SK3316
k3316
2-10R1B
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