Untitled
Abstract: No abstract text available
Text: 2SK2474 Power F-MOS FETs 2SK2474 Silicon N-Channel MOS Unit : mm For high-speed switching 6.5±0.1 5.3±0.1 • Features 1.8±0.1 2.5±0.1 4.35±0.1 3.0±0.1 ON-resistance RDS on 0.85±0.1 Symbol Rating Unit Drain-Source breakdown voltage VDSS 250 V Gate-Source voltage
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2SK2474
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5310A
Abstract: No abstract text available
Text: 2SK2471-01 N-channel MOS-FET FAP-II Series 300V > Features - 0,53Ω 10A 80W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators
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2SK2471-01
5310A
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2SK2476
Abstract: IEI-1213 MEI-1202 MF-1134
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2476 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2476 is N-Channel MOS Field Effect Transistor designed in millimeter for high voltage switching applications. FEATURES 10.0±0.3
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2SK2476
2SK2476
O-220
IEI-1213
MEI-1202
MF-1134
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mosfet 300V 10A
Abstract: 2SK2471-01 5310A
Text: 2SK2471-01 N-channel MOS-FET FAP-II Series 300V > Features - 0,53Ω 10A 80W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators
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2SK2471-01
mosfet 300V 10A
2SK2471-01
5310A
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D1026
Abstract: 2SK2477 MP-88 2SK24
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2477 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK2477 is N-Channel MOS Field Effect Transistors designed for high voltage switching applications. FEATURES • Low on-state resistance RDS on = 1.0 Ω MAX. (VGS = 10 V, ID = 5.0 A)
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2SK2477
2SK2477
D1026
MP-88
2SK24
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Untitled
Abstract: No abstract text available
Text: 2SK2471-01 N-channel MOS-FET FAP-II Series 300V > Features - 0,53Ω 10A 80W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators
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2SK2471-01
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Untitled
Abstract: No abstract text available
Text: 2SK2473-01 N-channel MOS-FET FAP-II Series 300V > Features - 0,2Ω 20A 125W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators
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2SK2473-01
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2SK2479
Abstract: IEI-1213 MEI-1202 MF-1134 MP-25 ED 03 Diode
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2479 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2479 is N-Channel MOS Field Effect Transistor de- in millimeters • Low On-Resistance 3.6 ± 0.2 4 1.3 ± 0.2 ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
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2SK2479
2SK2479
IEI-1213
MEI-1202
MF-1134
MP-25
ED 03 Diode
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54mj
Abstract: SMD Transistor nc 2SK2479
Text: Transistors IC SMD Type MOS Field Effect Transistors 2SK2479 TO-263 Unit: mm Low On-state Resistance:RDS on =7.5 max.(VGS=10V,ID=2.0A) Low Ciss Ciss=485pF TYP 1 .2 7 -0+ 0.1.1 Features +0.1 1.27-0.1 +0.2 4.57-0.2 5 .2 8 -0+ 0.2.2 +0.1 0.81-0.1 2.54 2.54 +0.2
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2SK2479
O-263
485pF
54mj
SMD Transistor nc
2SK2479
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2SK2478
Abstract: IEI-1213 MEI-1202 MF-1134
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2478 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2478 is N-Channel MOS Field Effect Transistor designed in millimeter for high voltage switching applications. FEATURES 10.0±0.3
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2SK2478
2SK2478
O-220
IEI-1213
MEI-1202
MF-1134
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Untitled
Abstract: No abstract text available
Text: 2SK2470-01MR N-channel MOS-FET FAP-II Series 300V > Features - 0,53Ω 10A 40W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators
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2SK2470-01MR
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Untitled
Abstract: No abstract text available
Text: PU J1 2SK2470-01 MR N-channel MOS-FET tìU tìlE L T te U K FAP-II Series 300V > Features - 0,53ß 10A 40W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V g s = ± 30V Guarantee Avalanche Proof
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2SK2470-01
20KiJ)
0004b25
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Untitled
Abstract: No abstract text available
Text: MOSFETs FAP-II Series - VGS ± 30V, Reduced Turn-Off Time, High Avalanche Ruggedness 200 - 900 Volts Device Type 2SK2519-01 2SK2520-01 MR 2SK2521-01 2SK2522-01MR 2SK2469-01MR 2SK2470-01MR 2SK2471-01 2SK2473-01 2SK1006-01MR 2SK1007-01 2SK1009-01 2SK1386-01
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2SK2519-01
2SK2520-01
2SK2521-01
2SK2522-01MR
2SK2469-01MR
2SK2470-01MR
2SK2471-01
2SK2473-01
2SK1006-01MR
2SK1007-01
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2478 SW ITCHING N-CHANNEL POWER M O S FET INDUSTRIAL USE DESCRIPTION The 2SK2478is N-Channel MOS Field E ffe c tT ra n s is to r designed P A C K A G E D IM E N S IO N S in m illimeter fo r hig h v o lta g e s w itc h in g applications,
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2SK2478
2SK2478is
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D1026
Abstract: 2SK2364 2SK2476 wy 509
Text: M O S F ie ld E ffe c t T r a n s is to r 2SK2476 N ^ - Ÿ T 'J l'/W x -M O S FET m m 2SK2363/2SK2364«N5l + ^;U Ìé M / W - MOS FET7\ X -f -y ^ > ^ 1 4 ^ ' 1 * n T Ì 3 V , # -f -y 3=-> ft O y - M f iI± 3 0 V f Ä lIT '- r o O tìÀ Ciss = 590 p F t l ï
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2SK2476
2SK2363/2SK2364
MP-45F
O-220)
D10268JJ1V0DS00
D1026
2SK2364
2SK2476
wy 509
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1Lp marking
Abstract: TI42 2SK316 100AA 2SK247 2SK301 b5ml BT35 ic marking Yb
Text: PANASONIC INDL/ELEKiSEMI} 7EC D | b^EflSM D0mb7b 2SK247 2SK247 " F y IJ □ y N f N-Channel Junction "b Ib 1! /W ide-B and, Low -N oise Amplifier • i# • ^ /F e a tu re s A iJ # M ;C ,SS5 ^ h 5 i'0/ L o w Ciss • S S s > 7 9 9 > x gra A{± £ i ' 0/H ig h gm
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2SK247
1Lp marking
TI42
2SK316
100AA
2SK247
2SK301
b5ml
BT35
ic marking Yb
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Untitled
Abstract: No abstract text available
Text: MOSFETs FAP-II Series - VGS ± 30V, Reduced Turn-Off Time, High Avalanche Ruggedness 200 - 900 Volts Device Type 2SK2519-01 2SK2520-01MR 2SK2521-01 2SK2522-01MR 2SK2469-01MR 2SK2470-01MR 2SK2471-01 2SK2473-01 2SK1006-01 MR 2SK1007-01 *2SK1009-01 2SK1386-01
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2SK2519-01
2SK2520-01MR
2SK2521-01
2SK2522-01MR
2SK2469-01MR
2SK2470-01MR
2SK2471-01
2SK2473-01
2SK1006-01
2SK1007-01
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55L Power Mosfet
Abstract: 150P T151 VI-AIM RGS100 80-XI
Text: FUJI '95 No. 12 ^ít£;í:i;l-*?»<?<r.¿í.;Mi: !'Í-Í> í¡í;!:¡í îii.ï ïf i3î.Sfï«-ï - _ 300V / 1 0 A / 0.53 Q ií d t /W —MOSFET FAP-D Nz- V ^ J l ' X > y \ > A ^ < > 2SK2470-01m r MOSFET mm N-channel enhancement mode POWER MOSFET M • ft
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2SK2470-01
55L Power Mosfet
150P
T151
VI-AIM
RGS100
80-XI
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jm01
Abstract: HM 1211
Text: FUJI '95 No. 13 S U JM E iF iM E • , I. ; F uj i: S e ma€ o;n d u;ct c^r ; *P J^ ^ u c;t;s 300V /10A/ 0.530 l i d r / ' v r7 — M O S F E T 2SK2471 -01 F A P - n N5- y*Jl'X > / \ > 7 .j< > hff$/\°7~M0SFET mm N-c hannel enhancement mode PO W ER M O SFET
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2SK2471
jm01
HM 1211
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2SK2476
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2476 SW ITCHING N-CHANNEL POWER M O S FET INDUSTRIAL USE DESCRIPTION P A C K A G E D IM E N S IO N S The 2SK2476is N-Channel MOS Field Effect T ra n s is to r designed in m illimeter fo r hig h v o lta g e s w itc h in g applications,
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2SK2476
2SK2476
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Untitled
Abstract: No abstract text available
Text: FUJI '95 No.1 4 m ±w M :H :" '“ r : 3 0 0 V / 2 0 A / 0.2 Q Ii± /W —MOSFET F A P -n 2SK2473-01 Kffj/\°7-MOSFET N-c hannel enhancement mode POWER MOSFET I $ :H: Features nW vk High curre nt \\ i t > ilc ia Low -on resistance i\i%\LW W t) Low driving pow er
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2SK2473-01
111iw
13dS01AI-Â
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Untitled
Abstract: No abstract text available
Text: FU JI 2SK2473-01 N-channel MOS-FET FAP-II Series 300V > Features - 0,2Q 20A 125W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage Vgs = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators
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2SK2473-01
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2479 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2479 is N -C hannel MOS Field E ffect T ra n s is to r de PACKAGE D IM E N S IO N S in m illim e te rs sig n e d fo r high v o lta g e s w itc h in g a p p lic a tio n s .
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2SK2479
2SK2479
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2SK2477
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2477 SW ITCHING N-CHANNEL POWER M O S FET INDUSTRIAL USE DESCRIPTION The 2SK2477 is N-Channel MOS Field Effect T ra n s is to r designed P A C K A G E D IM E N S IO N S in m illimeter fo r hig h v o lta g e s w itc h in g applications,
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2SK2477
2SK2477
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