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    2SK347 Search Results

    2SK347 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    2SK3479-Z-E1-AZ Renesas Electronics Corporation Nch Single Power Mosfet 100V 83A 11Mohm Mp-25Z/To-220Smd Visit Renesas Electronics Corporation
    2SK3479-ZJ-AZ Renesas Electronics Corporation Switching N Channel MOSFET Visit Renesas Electronics Corporation
    2SK3479-S-AZ Renesas Electronics Corporation Nch Single Power Mosfet 100V 83A 11Mohm Mp-25/To-220Ab Visit Renesas Electronics Corporation
    2SK3479-AZ Renesas Electronics Corporation Nch Single Power Mosfet 100V 83A 11Mohm Mp-25/To-220Ab Visit Renesas Electronics Corporation
    2SK3479-Z-AZ Renesas Electronics Corporation Nch Single Power Mosfet 100V 83A 11Mohm Mp-25Z/To-220Smd Visit Renesas Electronics Corporation Buy
    2SK3479-ZJ-E1-AZ Renesas Electronics Corporation Switching N Channel MOSFET Visit Renesas Electronics Corporation
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    2SK347 Price and Stock

    Renesas Electronics Corporation 2SK3479-Z-E1-AZ

    MOSFET N-CH 100V 83A TO-263
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    DigiKey 2SK3479-Z-E1-AZ Reel
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    Fuji Electric Co Ltd 2SK3474-01-TE24L

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    Quest Components 2SK3474-01-TE24L 41,864
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    Renesas Electronics Corporation 2SK3479-AZ

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    Quest Components 2SK3479-AZ 907
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    Toshiba America Electronic Components 2SK3475(TE12L,F)

    Transistor: N-MOSFET; unipolar; RF; 20V; 1A; 3W; SOT89; Pout: 630mW
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    TME 2SK3475(TE12L,F) 82 1
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    Toshiba America Electronic Components 2SK3475TE12LF

    FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
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    ComSIT USA 2SK3475TE12LF 1,995
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    Find more 2SK347 price and stock on Findchips.com

    2SK347 Datasheets (27)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SK347 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK3471 Toshiba Original PDF
    2SK3471 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    2SK3471(TE12L,F) Toshiba 2SK3471 - Trans MOSFET N-CH 500V 0.5A 4-Pin(3+Tab) PW-Mini T/R Original PDF
    2SK3472 Toshiba Field Effect Transistor Silicon N Channel MOS Type (Pi-MOS V) Original PDF
    2SK3472 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    2SK3473 Toshiba FETs - Nch 700V Original PDF
    2SK3473 Toshiba High-frequency Junction FET Original PDF
    2SK3473 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    2SK3474-01 Fuji Electric N-CHANNEL SILICON POWER MOSFET Original PDF
    2SK3475 Toshiba Original PDF
    2SK3475 Toshiba VHF/UHF Amplifier, 520MHz 0.63W, MOS-FET N-Channel enhanced Original PDF
    2SK3475(TE12L,F) Toshiba 2SK3475 - Trans MOSFET N-CH 20V 1A 4-Pin(3+Tab) PW-Mini T/R Original PDF
    2SK3475TE12LF Toshiba 2SK3475TE12LF - Trans MOSFET N-CH 20V 1A 4-Pin(3+Tab) PW-Mini T/R Original PDF
    2SK3476 Toshiba TOSHIBA Field Effect Transistor Silicon N Channel MOS Type Original PDF
    2SK3476 Toshiba Original PDF
    2SK3476(TE12L,Q) Toshiba 2SK3476 - Trans MOSFET N-CH 20V 3A 3-Pin PW-X T/R Original PDF
    2SK3476TE12LQ Toshiba 2SK3476TE12LQ - Trans MOSFET N-CH 20V 3A 3-Pin PW-X T/R Original PDF
    2SK3479 Kexin N-Channel MOSFET Original PDF
    2SK3479 NEC Nch MOS FET for large current switching Original PDF

    2SK347 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2SK3476 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3476 VHF- and UHF-band Amplifier Applications Unit: mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These


    Original     		PDF 2SK3476

    K3473

    Abstract: TOSHIBA K3473 transistor k3473 toshiba transistor k3473 K347 2SK3473 SC-65
    Text: 2SK3473 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK3473 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.3Ω (typ.) High forward transfer admittance: |Yfs| = 6.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)


    Original     		PDF 2SK3473 K3473 TOSHIBA K3473 transistor k3473 toshiba transistor k3473 K347 2SK3473 SC-65

    k3472

    Abstract: 2SK3472
    Text: 2SK3472 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3472 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 4.0 mΩ (typ.) • High forward transfer admittance: |Yfs| = 0.8 S (typ.) • Low leakage current: IDSS = 100 µA (max) (VDS = 450 V)


    Original     		PDF 2SK3472 k3472 2SK3472

    MOSFET TOSHIBA 2015

    Abstract: No abstract text available
    Text: TOSHIBA Discrete Devices RF Power MOSFET 2SK3476 Application Note Contens Contens ・・Bias Bias Current Current // DC DC Characteristics Characteristics Vds Vds = 4.8V, 4.8V, 6.0V, 6.0V, 7.2V, 7.2V, 8.4V, 8.4V, 9.6V 9.6V Vgs = 0.5V ~ 2.2V 0.05V Step


    Original     		PDF 2SK3476 100mA, 300mA, 500mA, 700mA, 900mA MOSFET TOSHIBA 2015

    0480F

    Abstract: transistor marking zg c2 2SK3475
    Text: 2SK3475 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3475 VHF- and UHF-band Amplifier Applications • Output power: PO = 630 mW min • Gain: GP = 14.9dB (min) Drain efficiency: ηD = 45% (min) • Maximum Ratings (Ta = 25°C) Characteristics


    Original     		PDF 2SK3475 0480F transistor marking zg c2 2SK3475

    k3472

    Abstract: 2SK3472 MJ103
    Text: 2SK3472 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOS V 2SK3472 Switching Regulator Applications Unit: mm • Low drain-source ON-resistance: RDS (ON) = 4.0 mΩ (typ.) • High forward transfer admittance: |Yfs| = 0.8 S (typ.) • Low leakage current: IDSS = 100 µA (max) (VDS = 450 V)


    Original     		PDF 2SK3472 k3472 2SK3472 MJ103

    2SK3476

    Abstract: No abstract text available
    Text: 2SK3476 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3476 VHF- and UHF-band Amplifier Applications Unit: mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These


    Original     		PDF 2SK3476 2SK3476

    2SK3476

    Abstract: No abstract text available
    Text: 2SK3476 東芝電界効果トランジスタ シリコンNチャネルMOS形 2SK3476 ○ HAM業務高周波電力増幅用 単位: mm ご注意 本資料に掲載されている製品は、通信機器向高周波電力増幅用に使 用されることを意図しています。他の用途に使用することは意図もされてい


    Original     		PDF 2SK3476 2SK3476

    0480F

    Abstract: 2SK3475
    Text: 2SK3475 東芝電界効果トランジスタ シリコン N チャネル MOS 形 2SK3475 ○ HAM業務無線高周波電力増幅用 単位: mm ご注意 本資料に掲載されている製品は、通信機器向高周波電力増幅用に使 用されることを意図しています。他の用途に使用することは意図もされてい


    Original     		PDF 2SK3475 SC-62 030519TAA 0480F 2SK3475

    2SK3471

    Abstract: No abstract text available
    Text: 2SK3471 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3471 Switching Regulator and DC-DC Converter Applications • Low drain-source ON resistance: RDS (ON) = 10 Ω (typ.) · High forward transfer admittance: |Yfs| = 0.4 S (typ.)


    Original     		PDF 2SK3471 2SK3471

    Untitled

    Abstract: No abstract text available
    Text: 2SK3474-01 FUJI POWER MOSFET Maximum Avalanche Energy vs. starting Tch E AV =f(starting Tch):Vcc=48V,I(AV)<=23A High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof 20 IAV [A] EAV [mJ] Features 25 200 150 100 N-CHANNEL SILICON POWER MOSFET


    Original     		PDF 2SK3474-01

    d1507

    Abstract: 2SK3479 2SK3479-S 2SK3479-Z 2SK3479-ZJ MP-25 MP-25Z
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3479 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3479 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3479 TO-220AB 2SK3479-S TO-262 2SK3479-ZJ TO-263 2SK3479-Z TO-220SMDNote


    Original     		PDF 2SK3479 2SK3479 O-220AB 2SK3479-S O-262 2SK3479-ZJ O-263 2SK3479-Z O-220SMDNote d1507 2SK3479-S 2SK3479-Z 2SK3479-ZJ MP-25 MP-25Z

    gat 20

    Abstract: smd transistor 26 2SK3479 1013M
    Text: MOSFET SMD Type MOS Field Effect Transistor 2SK3479 TO-263 +0.1 1.27-0.1 RDS on 2 = 13 m MAX. (VGS = 4.5 V, ID = 42 A) Low Ciss: Ciss = 11000 pF TYP. 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 Built-in gate protection diode 5.60 MAX. (VGS = 10 V, ID = 42 A) +0.2 4.57-0.2


    Original     		PDF 2SK3479 O-263 gat 20 smd transistor 26 2SK3479 1013M

    TOSHIBA K3473

    Abstract: k3473 2SK3473 K347 SC-65
    Text: 2SK3473 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSIV 2SK3473 スイッチングレギュレータDC−DC コンバータ用 モータドライブ用 単位: mm : RDS (ON) = 1.3Ω (標準) オン抵抗が低い。 : |Yfs| = 6.5S (標準)


    Original     		PDF 2SK3473 SC-65 2-16C1B 20070701-JA TOSHIBA K3473 k3473 2SK3473 K347 SC-65

    Untitled

    Abstract: No abstract text available
    Text: 2SK3472 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3472 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 4.0 mΩ (typ.) • High forward transfer admittance: |Yfs| = 0.8 S (typ.) • Low leakage current: IDSS = 100 µA (max) (VDS = 450 V)


    Original     		PDF 2SK3472 to150

    Untitled

    Abstract: No abstract text available
    Text: 2SK3472 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3472 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 4.0 mΩ (typ.) • High forward transfer admittance: |Yfs| = 0.8 S (typ.) • Low leakage current: IDSS = 100 µA (max) (VDS = 450 V)


    Original     		PDF 2SK3472 to150

    Untitled

    Abstract: No abstract text available
    Text: 2SK3476 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3476 VHF- and UHF-band Amplifier Applications Unit: mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These


    Original     		PDF 2SK3476

    Untitled

    Abstract: No abstract text available
    Text: 2SK3473 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOSIV 2SK3473 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.3 (typ.) High forward transfer admittance: |Yfs| = 6.5 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 720 V)


    Original     		PDF 2SK3473

    2SK3471

    Abstract: No abstract text available
    Text: 2SK3471 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3471 Switching Regulator and DC-DC Converter Applications • Unit: mm Low drain-source ON-resistance: RDS (ON) = 10 Ω (typ.) • High forward transfer admittance: |Yfs| = 0.4 S (typ.)


    Original     		PDF 2SK3471 2SK3471

    2SK3471

    Abstract: No abstract text available
    Text: 2SK3471 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSV 2SK3471 ○ スイッチングレギュレータDC-DC コンバータ用 • 単位: mm : RDS (ON) = 10 Ω (標準) オン抵抗が低い。 • 順方向伝達アドミタンスが高い。 : |Yfs| = 0.4 S (標準)


    Original     		PDF 2SK3471 SC-62 2SK3471

    K3472

    Abstract: 2SK3472
    Text: 2SK3472 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOS V 2SK3472 Switching Regulator Applications Unit: mm High forward transfer admittance: |Yfs| = 0.8 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 450 V) • Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)


    Original     		PDF 2SK3472 K3472 2SK3472

    TOSHIBA K3473

    Abstract: toshiba transistor k3473 transistor k3473 K3473
    Text: 2SK3473 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK3473 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.3 Ω (typ.) High forward transfer admittance: |Yfs| = 6.5 S (typ.)


    Original     		PDF 2SK3473 TOSHIBA K3473 toshiba transistor k3473 transistor k3473 K3473

    k3473

    Abstract: TOSHIBA K3473 transistor k3473 2SK3473 SC-65
    Text: 2SK3473 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK3473 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.3Ω (typ.) High forward transfer admittance: |Yfs| = 6.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)


    Original     		PDF 2SK3473 k3473 TOSHIBA K3473 transistor k3473 2SK3473 SC-65

    Untitled

    Abstract: No abstract text available
    Text: 2SK3476 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3476 VHF- and UHF-band Amplifier Applications Unit: mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These


    Original     		PDF 2SK3476