KM416C4004B
Abstract: No abstract text available
Text: KM416C4004B, KM416C4104B CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -5 or -6) are optional features of this
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KM416C4004B,
KM416C4104B
16bit
4Mx16
400mil
KM416C4004B
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Untitled
Abstract: No abstract text available
Text: KM416C4004B, KM416C4104B CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -5 or -6) are optional features of this
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KM416C4004B,
KM416C4104B
16bit
4Mx16
400mil
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31DQ8
Abstract: 31DQ14 3DA10 31DQ12
Text: KM416C4004B, KM416C4104 B CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -5 or -6) are optional features of this
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KM416C4004B,
KM416C4104
16bit
4Mx16
KM416C4004B
KM416C4104B
tAsc26ns,
tRASS2l00u8,
31DQ8
31DQ14
3DA10
31DQ12
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Untitled
Abstract: No abstract text available
Text: KM416C4004B, KM416C4104B CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a fam ily of 4,194,304 x 16 bit Extended Data O ut Mode CMOS DRAMs. Extended Data O ut Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-5 or -6) are optional features of this family.
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KM416C4004B,
KM416C4104B
16bit
4Mx16
416C4004B
416C4104B
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KM44C4105C-6
Abstract: KM44C16004
Text: General Information CMOS DRAM 1. introduction 4Mbit 4Mx1 KM41C4000D-5 - KM41C4000D-6 - KM41C4000D-7 KM41C4000D-L5 1Mx4 KM41C4000D-L6 KM41C4000D-L7 KM41V4000D-6 KM41V4000D-7 KM41V4000D-L6 KM41V4000D-L7 KM44C1000D-5 - KM44C1000D-6 - KM44C1000D-7 KM44C1000D-L5 - KM44C1000D-L6 - KM44C1000D-L7
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KM41C4000D-5
KM41C4000D-6
KM41C4000D-7
KM41C4000D-L5
KM41C4000D-L6
KM41V4000D-6
KM41V4000D-L6
KM41C4000D-L7
KM41V4000D-7
KM41V4000D-L7
KM44C4105C-6
KM44C16004
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE KMM364E40 8 4BS KMM364E40(8)4BS EDO Mode 4M x 64 DRAM DIMM Using 4M x16, 4K & 8K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM364E40(8)4B is a 4Mx64bits Dynamic RAM high density memory module. The Samsung KMM364E40(8)4B consists of four CMOS 4Mx16bits DRAMs
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KMM364E40
4Mx64bits
4Mx16bits
400mil
168-pin
KMM364E404BS
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k2624
Abstract: No abstract text available
Text: General Information CMOS DRAM 2. Product Guide Density Org. Power Supply 4Mbit 4Mx1 +5V±10% Part Number KM41C4000D# Spe«d ns 50/60/70 KM41 C4000D#-L +3.3V±0.3V KM41V4000D# 60/70 +5V±10% +3.3V±0.3V KM44C1000D# FP, LP KM44C1003D# Quad CÄS FP KM44C1004D#
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KM41C4000D#
C4000D
KM41V4000D#
KM41V4000W-L
KM44C1000D#
KM44C10OOD
KM44C1003D#
KM44C1004D#
KM44C1004D
KM44C1005D#
k2624
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