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    KM416C4104 Search Results

    KM416C4104 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Type PDF
    KM416C4104BS-45 Samsung Electronics 4M x 16-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM416C4104BS-5 Samsung Electronics 4M x 16-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM416C4104BS-6 Samsung Electronics 4M x 16-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM416C4104C Samsung Electronics 4M x 16-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM416C4104CS-5 Samsung Electronics 4M x 16-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM416C4104CS-6 Samsung Electronics 4M x 16-Bit CMOS dynamic RAM with extended data out, 5V, 4K refresh, 60ns Original PDF

    KM416C4104 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    KM416C4004B

    Abstract: No abstract text available
    Text: KM416C4004B, KM416C4104B CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -5 or -6) are optional features of this


    Original     		PDF KM416C4004B, KM416C4104B 16bit 4Mx16 400mil KM416C4004B

    Untitled

    Abstract: No abstract text available
    Text: KM416C4004B, KM416C4104B CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -5 or -6) are optional features of this


    Original     		PDF KM416C4004B, KM416C4104B 16bit 4Mx16 400mil

    KM416C4004C

    Abstract: KM416C4104C
    Text: KM416C4004C, KM416C4104C CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-5 or -6) are optional features of this family.


    Original     		PDF KM416C4004C, KM416C4104C 16bit 4Mx16 400mil KM416C4004C KM416C4104C

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM5368005CSW/CSWG 4Byte 8Mx36 SIMM 4Mx16 & Quad CAS 4Mx4 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. KMM5368005CSW/CSWG DRAM MODULE


    Original     		PDF KMM5368005CSW/CSWG 8Mx36 4Mx16 KMM5368005CSW/CSWG KMM5368005C 8Mx36bits

    KMM5324004CSW

    Abstract: KMM5324004CSWG
    Text: DRAM MODULE KMM5324004CSW/CSWG 4Byte 4Mx32 SIMM 4Mx16 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. KMM5324004CSW/CSWG DRAM MODULE KMM5324004CSW/CSWG


    Original     		PDF KMM5324004CSW/CSWG 4Mx32 4Mx16 KMM5324004CSW/CSWG 4Mx16, KMM5324004C 4Mx32bits KMM5324004C KMM5324004CSW KMM5324004CSWG

    KMM5364005BSW

    Abstract: KMM5364005BSWG
    Text: DRAM MODULE KMM5364005BSW/BSWG KMM5364005BSW/BSWG EDO Mode 4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5364005B is a 4Mx36bits Dynamic RAM high density memory module. The Samsung KMM5364005B consists of two CMOS 4Mx16bits and one CMOS Quad CAS


    Original     		PDF KMM5364005BSW/BSWG KMM5364005BSW/BSWG 4Mx16 KMM5364005B 4Mx36bits KMM5364005B 4Mx16bits 72-pin KMM5364005BSW KMM5364005BSWG

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM364E80 8 4CS Buffered 8Mx64 DIMM (4Mx16 base) Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. KMM364E80(8)4CS DRAM MODULE KMM364E80(8)4CS


    Original     		PDF KMM364E80 8Mx64 4Mx16 4Mx16, 4Mx64bits 4Mx16bits

    Untitled

    Abstract: No abstract text available
    Text: KMM372E804CS DRAM MODULE Buffered 8Mx72 DIMM 4Mx16 & 4Mx4 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM componenets are applied for this module. KMM372E804CS KMM372E804CS DRAM MODULE


    Original     		PDF KMM372E804CS 8Mx72 4Mx16 KMM372E804CS KMM372E804C 8Mx72bits

    KMM5328004BSW

    Abstract: KMM5328004BSWG
    Text: DRAM MODULE KMM5328004BSW/BSWG KMM5328004BSW/BSWG EDO Mode 8M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5328004B is a 8Mx32bits Dynamic RAM high density memory module. The Samsung KMM5328004B consists of four CMOS 4Mx16bits DRAMs in TSOP packages


    Original     		PDF KMM5328004BSW/BSWG KMM5328004BSW/BSWG 4Mx16, KMM5328004B 8Mx32bits KMM5328004B 4Mx16bits 72-pin KMM5328004BSW KMM5328004BSWG

    KMM5324004BSW

    Abstract: KMM5324004BSWG
    Text: DRAM MODULE KMM5324004BSW/BSWG KMM5324004BSW/BSWG EDO Mode 4M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5324004B is a 4Mx32bits Dynamic RAM high density memory module. The Samsung KMM5324004B consists of two CMOS 4Mx16bits DRAMs in TSOP packages


    Original     		PDF KMM5324004BSW/BSWG KMM5324004BSW/BSWG 4Mx16, KMM5324004B 4Mx32bits KMM5324004B 4Mx16bits 72-pin KMM5324004BSW KMM5324004BSWG

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM364E40 8 4CS Buffered 4Mx64 DIMM (4Mx16 base) Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. KMM364E40(8)4CS DRAM MODULE KMM364E40(8)4CS


    Original     		PDF KMM364E40 4Mx64 4Mx16 4Mx16, 4Mx64bits

    capacitor taa

    Abstract: KMM5328004BSW KMM5328004BSWG
    Text: DRAM MODULE KMM5328004BSW/BSWG KMM5328004BSW/BSWG EDO Mode 8M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5328004B is a 8Mx32bits Dynamic RAM high density memory module. The Samsung KMM5328004B consists of four CMOS 4Mx16bits DRAMs in TSOP packages


    Original     		PDF KMM5328004BSW/BSWG KMM5328004BSW/BSWG 4Mx16, KMM5328004B 8Mx32bits KMM5328004B 4Mx16bits 72-pin capacitor taa KMM5328004BSW KMM5328004BSWG

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM372E404CS Buffered 4Mx72 DIMM 4Mx16 & 4Mx4 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. KMM372E404CS DRAM MODULE KMM372E404CS


    Original     		PDF KMM372E404CS 4Mx72 4Mx16 KMM372E404CK/CS KMM372E404C 4Mx72bits 4Mx16bits

    KMM5328004CSW

    Abstract: KMM5328004CSWG samsung 64mb dram module 72-pin simm
    Text: DRAM MODULE KMM5328004CSW/CSWG 4Byte 8Mx32 SIMM 4Mx16 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. KMM5328004CSW/CSWG DRAM MODULE KMM5328004CSW/CSWG


    Original     		PDF KMM5328004CSW/CSWG 8Mx32 4Mx16 KMM5328004CSW/CSWG 4Mx16, KMM5328004C 8Mx32bits KMM5328004C KMM5328004CSW KMM5328004CSWG samsung 64mb dram module 72-pin simm

    31DQ8

    Abstract: 31DQ14 3DA10 31DQ12
    Text: KM416C4004B, KM416C4104 B CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -5 or -6) are optional features of this


    OCR Scan     		PDF KM416C4004B, KM416C4104 16bit 4Mx16 KM416C4004B KM416C4104B tAsc26ns, tRASS2l00u8, 31DQ8 31DQ14 3DA10 31DQ12

    Untitled

    Abstract: No abstract text available
    Text: KM416C4004B, KM416C4104B CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a fam ily of 4,194,304 x 16 bit Extended Data O ut Mode CMOS DRAMs. Extended Data O ut Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-5 or -6) are optional features of this family.


    OCR Scan     		PDF KM416C4004B, KM416C4104B 16bit 4Mx16 416C4004B 416C4104B

    4MB DRAM

    Abstract: 4MX16 1MX16
    Text: TABLE OF CONTENTS I. GENERAL INFORMATION 1. Introduction . 11 2. Product Guide . 17 3. Ordering information . .


    OCR Scan     		PDF KM41C4000D/KM41V4000D. KM44C1000D/KM44V1000D. KM44C1003D -KM44C1004D/KM44V1004D. KM44C1005D -KM48C512D/KM48V512D. KM48C512D 4MB DRAM 4MX16 1MX16

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KM M 3 7 2 E 4 0 4 B S Buffered 4Mx72 DIMM 4Mx16 & 4Mx4 base Revision 0.0 Sept. 1997 DRAM MODULE KM M 3 7 2 E 4 0 4 B S Revision History Version 0.0 (Sept, 1997) ; Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS.


    OCR Scan     		PDF 4Mx72 4Mx16 372E404BS 4096cycles/64ms 100Max 54Max) KMM372E404BS -KM416C4104BS

    KM416C4104AS

    Abstract: KM416C4104a KM44C4005BS
    Text: Preliminary KMM5364005ASW/ASWG DRAM MODULE KMM5364005ASW/ASWG EDO Mode 4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5364005A is a 4Mx36bits Dynamic RAM - Part Identification high density memory module. The Samsung KMM5364005A


    OCR Scan     		PDF KMM5364005ASW/ASWG KMM5364005ASW/ASWG 4Mx16 KMM5364005A 4Mx36bits 4Mx16bits 72-pin KMM5364005ASW KM416C4104AS KM416C4104a KM44C4005BS

    KM44C4105C-6

    Abstract: KM44C16004
    Text: General Information CMOS DRAM 1. introduction 4Mbit 4Mx1 KM41C4000D-5 - KM41C4000D-6 - KM41C4000D-7 KM41C4000D-L5 1Mx4 KM41C4000D-L6 KM41C4000D-L7 KM41V4000D-6 KM41V4000D-7 KM41V4000D-L6 KM41V4000D-L7 KM44C1000D-5 - KM44C1000D-6 - KM44C1000D-7 KM44C1000D-L5 - KM44C1000D-L6 - KM44C1000D-L7


    OCR Scan     		PDF KM41C4000D-5 KM41C4000D-6 KM41C4000D-7 KM41C4000D-L5 KM41C4000D-L6 KM41V4000D-6 KM41V4000D-L6 KM41C4000D-L7 KM41V4000D-7 KM41V4000D-L7 KM44C4105C-6 KM44C16004

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM5364005BSW/BSWG KMM5364005BSW/BSWG EDO Mode 4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5364005B is a 4Mx36bits Dynamic RAM high density memory module. The Samsung KMM5364005B consists of two CMOS 4Mx16bits and one CMOS Quad CAS


    OCR Scan     		PDF KMM5364005BSW/BSWG KMM5364005BSW/BSWG 4Mx16 KMM5364005B 4Mx36bits 4Mx16bits 72-pin KMM5364005BSW

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM364E40 8 4BS KMM364E40(8)4BS EDO Mode 4M x 64 DRAM DIMM Using 4M x16, 4K & 8K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM364E40(8)4B is a 4Mx64bits Dynamic RAM high density memory module. The Samsung KMM364E40(8)4B consists of four CMOS 4Mx16bits DRAMs


    OCR Scan     		PDF KMM364E40 4Mx64bits 4Mx16bits 400mil 168-pin KMM364E404BS

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM372E404BS KMM372E404BK/BS EDO Mode 4M x 72 DRAM DIMM Using 4Mx16 & 4Mx4, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM372E404B is a 4Mx72bits Dynamic RAM high density memory module. The Samsung KMM372E404B consists of four 4Mx16bits & two 4Mx4bits CMOS DRAM in


    OCR Scan     		PDF KMM372E404BK/BS 4Mx16 KMM372E404B 4Mx72bits 4Mx16bits 400mil 168-pin KMM372E404BS

    KM416C4104AS

    Abstract: kmm5328004asw km416c4104a
    Text: Preliminary KMM5328004ASW/ASWG DRAM MODULE KMM5328004ASW/ASWG EDO Mode 8M X 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5328004A is a 8Mx32bits Dynamic RAM - Part Identification high density memory module. The Samsung KMM5328004A


    OCR Scan     		PDF KMM5328004ASW/ASWG 4Mx16, KMM5328004A 8Mx32bits 4Mx16bits 72-pin KMM5328004ASW/ASWG KMM5328004ASW KM416C4104AS km416c4104a