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    Vishay Vitramon VJ1206Y222KXGAT5Z

    CAP CER 2200PF 1KV X7R 1206
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    DigiKey VJ1206Y222KXGAT5Z Cut Tape 13,677 1
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    VJ1206Y222KXGAT5Z Digi-Reel 13,677 1
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    VJ1206Y222KXGAT5Z Reel 9,000 3,000
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    Vishay Vitramon VJ1206Y222KXEMC

    CAP CER 2200PF 500V X7R 1206
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    DigiKey VJ1206Y222KXEMC Digi-Reel 6,100 1
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    VJ1206Y222KXEMC Cut Tape 6,100 1
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    VJ1206Y222KXEMC Reel 6,000 3,000
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    Vishay Vitramon VJ1206Y222MXEAT5Z

    CAP CER 2200PF 500V X7R 1206
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    DigiKey VJ1206Y222MXEAT5Z Digi-Reel 5,900 1
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    VJ1206Y222MXEAT5Z Cut Tape 5,900 1
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    VJ1206Y222MXEAT5Z Reel 3,000 3,000
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    Vishay Vitramon VJ1206Y222KBEAT4X

    CAP CER 2200PF 500V X7R 1206
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    DigiKey VJ1206Y222KBEAT4X Digi-Reel 4,274 1
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    VJ1206Y222KBEAT4X Cut Tape 4,274 1
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    VJ1206Y222KBEAT4X Reel 3,000 3,000
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    Vishay Vitramon VJ1206Y222KXEAC

    CAP CER 2200PF 500V X7R 1206
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    DigiKey VJ1206Y222KXEAC Digi-Reel 3,616 1
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    VJ1206Y222KXEAC Reel 3,000 3,000
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    VJ1206Y222 Datasheets (135)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    VJ1206Y222JBAAT4X Vishay Vitramon Ceramic Capacitors, Capacitors, CAP CER 2200PF 50V 5% X7R 1206 Original PDF
    VJ1206Y222JBBAT4X Vishay Vitramon Ceramic Capacitors, Capacitors, CAP CER 2200PF 100V 5% X7R 1206 Original PDF
    VJ1206Y222JBCAT4X Vishay Vitramon Ceramic Capacitors, Capacitors, CAP CER 2200PF 200V 5% X7R 1206 Original PDF
    VJ1206Y222JBEAT4X Vishay Vitramon Ceramic Capacitors, Capacitors, CAP CER 2200PF 500V 5% X7R 1206 Original PDF
    VJ1206Y222JBGAT4X Vishay Vitramon Ceramic Capacitors, Capacitors, CAP CER 2200PF 1KV 5% X7R 1206 Original PDF
    VJ1206Y222JBLAT4X Vishay Vitramon Ceramic Capacitors, Capacitors, CAP CER 2200PF 630V 5% X7R 1206 Original PDF
    VJ1206Y222JLAAJ32 Vishay Vitramon Ceramic Capacitor 2200 PF 50V X7R 1206 PB Original PDF
    VJ1206Y222JLBAJ32 Vishay Vitramon Ceramic Capacitor 2200 PF 100V X7R 1206 PB Original PDF
    VJ1206Y222JLCAJ32 Vishay Vitramon Ceramic Capacitor 2200 PF 200V X7R 1206 PB Original PDF
    VJ1206Y222JLEAJ32 Vishay Vitramon Ceramic Capacitor 2200 PF 500V X7R 1206 PB Original PDF
    VJ1206Y222JLJAJ32 Vishay Vitramon Ceramic Capacitor 2200 PF 16V X7R 1206 PB Original PDF
    VJ1206Y222JLLAJ32 Vishay Vitramon Ceramic Capacitor 2200 PF 630V X7R 1206 PB Original PDF
    VJ1206Y222JLXAJ32 Vishay Vitramon Ceramic Capacitor 2200 PF 25V X7R 1206 PB Original PDF
    VJ1206Y222JXAAC Vishay Vitramon Capacitors - Ceramic Capacitors - CAP CER 2200PF 50V X7R 1206 Original PDF
    VJ1206Y222JXAAP Vishay Vitramon Capacitors - Ceramic Capacitors - CAP CER 2200PF 50V X7R 1206 Original PDF
    VJ1206Y222JXAAT Vishay Vitramon Capacitors - Ceramic Capacitors - CAP CER 2200PF 50V X7R 1206 Original PDF
    VJ1206Y222JXACW1BC Vishay Vitramon Capacitors - Ceramic Capacitors - CAP CER 2200PF 50V X7R 1206 Original PDF
    VJ1206Y222JXAMC Vishay Vitramon Capacitors - Ceramic Capacitors - CAP CER 2200PF 50V X7R 1206 Original PDF
    VJ1206Y222JXAMP Vishay Vitramon Capacitors - Ceramic Capacitors - CAP CER 2200PF 50V X7R 1206 Original PDF
    VJ1206Y222JXAMR Vishay Vitramon Capacitors - Ceramic Capacitors - CAP CER 2200PF 50V X7R 1206 Original PDF
    ...

    VJ1206Y222 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AGR09030GUM

    Abstract: JESD22-C101A RF35
    Text: Preliminary Data Sheet August 2004 AGR09030GUM 30 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09030GUM is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular


    Original     		PDF AGR09030GUM Hz--895 AGR09030GUM DS04-246RFPP PB04-094RFPP) JESD22-C101A RF35

    C1206C104KRAC7800

    Abstract: 100b6r8 AGR09045E AGR09045EF AGR09045EU JESD22-C101A RM73B2B103J 100B470JW
    Text: AGR09045E 45 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09045E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular


    Original     		PDF AGR09045E Hz--895 AGR09045E DS04-295RFPP DS04-198RFPP) C1206C104KRAC7800 100b6r8 AGR09045EF AGR09045EU JESD22-C101A RM73B2B103J 100B470JW

    mmbt914

    Abstract: zener diode c18 5t optocoupler a 3131 zener diode c24 5t power transformer PAYTON 105 GD103 Payton power transformer PAYTON 125 c22 5t CRCW1206000ZJ
    Text: AND8105/D Design of a 100 W DC−DC Converter for Telecom Systems Using the NCP1560 http://onsemi.com Prepared by: Juan Carlos Pastrana ON Semiconductor APPLICATION NOTE • Dual Mode Overcurrent Protection Circuit: handles INTRODUCTION The NCP1560 PWM controller contains all the features


    Original     		PDF AND8105/D NCP1560 NCP1560 mmbt914 zener diode c18 5t optocoupler a 3131 zener diode c24 5t power transformer PAYTON 105 GD103 Payton power transformer PAYTON 125 c22 5t CRCW1206000ZJ

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet May 2004 AGR09030E 30 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09030E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular


    Original     		PDF AGR09030E Hz--895 DS04-197RFPP DS04-149RFPP)

    b0912

    Abstract: No abstract text available
    Text: T1G6003028-FS 30W, 28V, DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features


    Original     		PDF T1G6003028-FS T1G6003028-FS b0912

    agere c8 c1

    Abstract: 100b8r2jw 100B6R8JW
    Text: Preliminary Data Sheet January 2003 AGR09045E 45 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09045E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular


    Original     		PDF AGR09045E Hz--895 DS02-219RFPP agere c8 c1 100b8r2jw 100B6R8JW

    GD103

    Abstract: 4752F 1N914 diode free max5776 power transformer PAYTON 125 mosfet 9452
    Text: NCP1560 Advance Information Full Featured Voltage Mode PWM Controller The NCP1560 PWM controller contains all of the features and flexibility needed to implement voltage–mode control for modern high performance power converters. This device cost effectively


    Original     		PDF NCP1560 r14525 NCP1560/D GD103 4752F 1N914 diode free max5776 power transformer PAYTON 125 mosfet 9452

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    Untitled

    Abstract: No abstract text available
    Text: T2G4005528-FS 55W, 28V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features


    Original     		PDF T2G4005528-FS T2G4005528-FS TQGaN25

    Untitled

    Abstract: No abstract text available
    Text: T2G4005528-FS 55W, 28V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features


    Original     		PDF T2G4005528-FS T2G4005528-FS

    Untitled

    Abstract: No abstract text available
    Text: T2G6003028-FS 30W, 28V DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features •


    Original     		PDF T2G6003028-FS T2G6003028-FS TQGaN25

    T2G405528-FSEVB2

    Abstract: No abstract text available
    Text: T2G4005528-FS 55W, 28V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features


    Original     		PDF T2G4005528-FS T2G4005528-FS TQGaN25 T2G405528-FSEVB2

    J293

    Abstract: 100A470JW RM73B2B100J Transistor Z17 100B100JW AGR18125E AGR18125EF AGR18125EU JESD22-C101A
    Text: Product Brief AGR18125E 125 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18125E is a 125 W, 26 V, N-channel goldmetallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor


    Original     		PDF AGR18125E AGR18125E AGR18125EF AGR18125XF M-AGR21125F 12-digit J293 100A470JW RM73B2B100J Transistor Z17 100B100JW AGR18125EF AGR18125EU JESD22-C101A

    panasonic inverter dv 707 manual

    Abstract: 018T A423 Mosfet FTR 03-E Arcotronics 1.27.6 nsl 7053 mkp DX 3500 manual Honeywell DBM 01A Polyester capacitors 823k 250V SPRAGUE powerlytic 36Dx sprague 68D
    Text: PASSIVE COMPONENTS Resistors Networks and Arrays Bourns. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 590, 591, 592 Caddock . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 593 CTS. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 594


    Original     		PDF

    ILS-1206

    Abstract: Vishay Siliconix COILCRAFT DT3316-103 sprague catalog CRCW1206101J DT3316 VJ1206Y103KXA VJ1206Y103KXAAT Surface mount NPN/PNP complementary transistor VJ1206Y222KXAAT
    Text: AN715 Vishay Siliconix AN715 Designing Low-Voltage DC/DC Converters with the Si9145 INTRODUCTION The Siliconix Si9145 switchmode controller IC is designed to make dc-to-dc conversion smaller and more efficient in lowvoltage, low-power applications such as portable cellular


    Original     		PDF AN715 Si9145 Si9145 CRCW1206102JRT1 CRCW1206103JRT1 CRCW12065110FRT1 CRCW12061000FRT1 ILS-1206 Vishay Siliconix COILCRAFT DT3316-103 sprague catalog CRCW1206101J DT3316 VJ1206Y103KXA VJ1206Y103KXAAT Surface mount NPN/PNP complementary transistor VJ1206Y222KXAAT

    Untitled

    Abstract: No abstract text available
    Text: T1G4005528-FS 55W, 28V, DC – 3.5GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Avionics Wideband or narrowband amplifiers Product Features


    Original     		PDF T1G4005528-FS T1G4005528-FS

    VJ1206Y104KXAAT

    Abstract: onsemi 035 diode LM2586 LM341-15 "PWM regulator" 1SMB22AT3 594D156X9050R2T MBRS240LT3 MURS140T3 LM3411-5
    Text: 1.0 Design Specifications Inputs Outputs #1 VinMin=12.00 V Vout1=5.00 V VinMax=30.00 V Iout1=1.50 A 2.0 Design Description The LM2586 and the LM3411-5 are employed here to design a fully isolated, "flyback" power supply where minimizing the parts count and simplicity is important. The LM2586 is a PWM


    Original     		PDF LM2586 LM3411-5 CSP-9-111S2) CSP-9-111S2. LM2586 VJ1206Y104KXAAT onsemi 035 diode LM341-15 "PWM regulator" 1SMB22AT3 594D156X9050R2T MBRS240LT3 MURS140T3

    AGR09045E

    Abstract: AGR09045EF AGR09045EU JESD22-C101A RM73B2B103J
    Text: Preliminary Data Sheet October 2004 AGR09045E 45 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09045E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular


    Original     		PDF AGR09045E Hz--895 AGR09045E package9-9138 DS04-295RFPP DS04-198RFPP) AGR09045EF AGR09045EU JESD22-C101A RM73B2B103J

    AGR09045XUM

    Abstract: JESD22-C101A RF35 z24 mosfet RK73H2A10R0F
    Text: Preliminary Data Sheet April 2004 AGR09045XUM 45 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09045XUM is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular


    Original     		PDF AGR09045XUM Hz--895 AGR09045XUM DS04-138RFPP PB04-071RFPP) JESD22-C101A RF35 z24 mosfet RK73H2A10R0F

    ATC600S3R0

    Abstract: ATC600S0R3 ATC600S0R2 37C0064
    Text: T1G6003028-FL 30W, 28V, DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features


    Original     		PDF T1G6003028-FL T1G6003028-FL ATC600S3R0 ATC600S0R3 ATC600S0R2 37C0064

    Untitled

    Abstract: No abstract text available
    Text: User's Guide SNVA019A – October 2007 – Revised April 2013 AN-1147 LM2651_EVAL 1.5A High Efficiency Synchronous Switching Regulator Evaluation Board 1 Introduction The LM2651 switching regulator provides high efficiency power conversion over a 100:1 load range 1.5A


    Original     		PDF SNVA019A AN-1147 LM2651

    transistor j210

    Abstract: 100B1R0BW J283 AGR09030E AGR09030EF AGR09030EU JESD22-C101A RM73B2B C1206C104KRAC7800 c.d.m. technology acp
    Text: AGR09030E 30 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09030E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular


    Original     		PDF AGR09030E Hz--895 AGR09030E AGR09030EU AGR09030EF transistor j210 100B1R0BW J283 AGR09030EF AGR09030EU JESD22-C101A RM73B2B C1206C104KRAC7800 c.d.m. technology acp

    RM73B2B103J

    Abstract: C1206C104KRAC7800 100B100JW DS02-219RFPP
    Text: Preliminary Data Sheet July 2003 AGR09045E 45 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09045E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular


    Original     		PDF AGR09045E Hz--895 DS03-058RFPP DS02-219RFPP) RM73B2B103J C1206C104KRAC7800 100B100JW DS02-219RFPP

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet November 2003 AGR09045E 45 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09045E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular


    Original     		PDF AGR09045E Hz--895 DS04-026RFPP DS03-058RFPP)