Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    100B1R0BW Search Results

    SF Impression Pixel

    100B1R0BW Price and Stock

    Kyocera AVX Components 100B1R0BW500XT1K

    CAP CER 1PF 500V P90 1111
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 100B1R0BW500XT1K Cut Tape 15,802 1
    • 1 $8.81
    • 10 $6.135
    • 100 $4.7107
    • 1000 $4.13106
    • 10000 $4.13106
    		Buy Now
    100B1R0BW500XT1K Digi-Reel 15,802 1
    • 1 $8.81
    • 10 $6.135
    • 100 $4.7107
    • 1000 $4.13106
    • 10000 $4.13106
    		Buy Now
    100B1R0BW500XT1K Reel 3,000 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $3.94965
    • 10000 $3.79935
    		Buy Now
    Avnet Americas 100B1R0BW500XT1K Tape w/Leader 16 Weeks 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote
    Mouser Electronics 100B1R0BW500XT1K
    • 1 $6.27
    • 10 $4.75
    • 100 $3.61
    • 1000 $2.97
    • 10000 $2.88
    		Get Quote
    Richardson RFPD 100B1R0BW500XT1K 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $2.21
    • 10000 $1.72
    		Buy Now

    Kyocera AVX Components 100B1R0BW500XC100

    MLC A/B/R - Waffle Pack (Alt: 100B1R0BW500XC100)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas 100B1R0BW500XC100 Waffle Pack 16 Weeks 100
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote
    Mouser Electronics 100B1R0BW500XC100 172
    • 1 $6.65
    • 10 $5.77
    • 100 $4.43
    • 1000 $3.76
    • 10000 $3.69
    		Buy Now
    Richardson RFPD 100B1R0BW500XC100 355 100
    • 1 -
    • 10 -
    • 100 $3.57
    • 1000 $2.16
    • 10000 $1.69
    		Buy Now

    Kyocera AVX Components 100B1R0BW1500XT

    MLC A/B/R - Custom Tape W/Leader (Alt: 100B1R0BW1500XT)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas 100B1R0BW1500XT Tape w/Leader 16 Weeks 500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote
    Mouser Electronics 100B1R0BW1500XT
    • 1 -
    • 10 -
    • 100 -
    • 1000 $3.71
    • 10000 $3.71
    		Get Quote

    Kyocera AVX Components 100B1R0BW1500XTV

    MLC A/B/R - Custom Tape W/Leader (Alt: 100B1R0BW1500XTV)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas 100B1R0BW1500XTV Tape w/Leader 16 Weeks 500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote
    Mouser Electronics 100B1R0BW1500XTV
    • 1 -
    • 10 -
    • 100 -
    • 1000 $2.84
    • 10000 $2.84
    		Get Quote
    Newark 100B1R0BW1500XTV Bulk 500
    • 1 -
    • 10 -
    • 100 -
    • 1000 $5.59
    • 10000 $5.59
    		Buy Now

    Kyocera AVX Components 100B1R0BWN500XT

    MLC A/B/R - Custom Tape W/Leader (Alt: 100B1R0BWN500XT)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas 100B1R0BWN500XT Tape w/Leader 16 Weeks 500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote
    Mouser Electronics 100B1R0BWN500XT
    • 1 -
    • 10 -
    • 100 -
    • 1000 $3.64
    • 10000 $3.64
    		Get Quote
    Find more 100B1R0BW price and stock on Findchips.com

    100B1R0BW Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    100B1R0BW500XT American Technical Ceramics Capacitors - Ceramic Capacitors - CAP CER 1PF 500V P90 1111 Original PDF
    100B1R0BW500XT1K American Technical Ceramics Ceramic Capacitor 1PF 500V P90 1111 Original PDF

    100B1R0BW Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    100B0R1BW

    Abstract: 100A1R5BW A113 A114 A115 AN1955 C101 JESD22 MW6IC2015GNBR1 MW6IC2015NBR1
    Text: Freescale Semiconductor Technical Data Document Number: MW6IC2015N Rev. 0, 2/2006 RF LDMOS Wideband Integrated Power Amplifiers The MW6IC2015N wideband integrated circuit is designed for base station applications. It uses Freescale’s newest High Voltage 26 to 32 Volts LDMOS


    Original     		MW6IC2015N MW6IC2015N MW6IC2015NBR1 MW6IC2015GNBR1 100B0R1BW 100A1R5BW A113 A114 A115 AN1955 C101 JESD22 MW6IC2015GNBR1 PDF

    A113

    Abstract: A114 A115 C101 JESD22 MRF6S18060MBR1
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S18060 Rev. 2, 5/2006 Replaced by MRF6S18060NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.


    Original     		MRF6S18060 MRF6S18060NR1/NBR1. MRF6S18060MR1 MRF6S18060MBR1 MRF6S18060MR1 A113 A114 A115 C101 JESD22 MRF6S18060MBR1 PDF

    100B0R5BW

    Abstract: MW4IC2020NBR1
    Text: Freescale Semiconductor Technical Data Document Number: MW4IC2020 Rev. 7, 8/2005 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC2020 wideband integrated circuit is designed with on - chip matching that makes it usable from 1600 to 2400 MHz. This multi - stage


    Original     		MW4IC2020 MW4IC2020NBR1 MW4IC2020GNBR1 MW4IC2020MBR1 MW4IC2020GMBR1 MW4IC2020 100B0R5BW PDF

    MRF5S21045N

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF5S21045N Rev. 3, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for W - CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		MRF5S21045N MRF5S21045NR1 MRF5S21045NBR1 MRF5S21045N PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF5S19060N Rev. 4, 8/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S19060NR1 MRF5S19060NBR1 MRF5S19060MR1 MRF5S19060MBR1 Designed for broadband commercial and industrial applications with


    Original     		MRF5S19060N MRF5S19060NR1 MRF5S19060NBR1 MRF5S19060MR1 MRF5S19060MBR1 MRF5S19060N PDF

    mosfet 1412

    Abstract: No abstract text available
    Text: Draft Copy Only Preliminary Data Sheet September 2003 AGR09090EF 90 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced


    Original     		AGR09090EF Hz--960 DS03-202RFPP mosfet 1412 PDF

    MW4IC2020NBR1

    Abstract: Marking Z7 Gate Driver A113 AN1955 AN1977 AN1987 MW4IC2020 MW4IC2020GMBR1 MW4IC2020MBR1 MW4IC2020MBR
    Text: Document Number: MW4IC2020 Freescale Semiconductor Rev. 8, 5/2006 Replaced by MW4IC2020NBR1 GNBR1 . There are no form, fit or function changes with this Technical Data part replacement. N suffix added to part number to indicate transition to lead - free terminations.


    Original     		MW4IC2020 MW4IC2020NBR1 MW4IC2020 MW4IC2020MBR1 MW4IC2020GMBR1 Marking Z7 Gate Driver A113 AN1955 AN1977 AN1987 MW4IC2020GMBR1 MW4IC2020MBR PDF

    ATC capacitor 100b

    Abstract: MRF9130LR3 MRF9130L MRF9130LSR3 irl130
    Text: MOTOROLA Order this document by MRF9130L/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF9130L MRF9130LR3 MRF9130LSR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with


    Original     		MRF9130L/D MRF9130L MRF9130LR3 MRF9130LSR3 MRF9130L MRF9130LR3 ATC capacitor 100b MRF9130LSR3 irl130 PDF

    A113

    Abstract: AN1955 MRF5S19060MBR1 MRF5S19060MR1 MRF5S19060NBR1 MRF5S19060NR1
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S19060N/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF5S19060NR1 Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFETs MRF5S19060NBR1


    Original     		MRF5S19060N/D MRF5S19060NR1 MRF5S19060NBR1 MRF5S19060NR1 MRF5S19060NBR1 MRF5S19060MR1 MRF5S19060MBR1 A113 AN1955 MRF5S19060MBR1 PDF

    100B100JW500X

    Abstract: AGR09090EF JESD22-C101A
    Text: Preliminary Data Sheet November 2003 AGR09090EF 90 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced


    Original     		AGR09090EF Hz--960 AGR09090EF DS04-058RFPP DS04-029RFPP) 100B100JW500X JESD22-C101A PDF

    A113

    Abstract: AN1987 MW4IC2020GMBR1 MW4IC2020MBR1
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MW4IC2020/D SEMICONDUCTOR TECHNICAL DATA The Wideband IC Line Freescale Semiconductor, Inc. RF LDMOS Wideband Integrated Power Amplifiers The MW4IC2020M wideband integrated circuit is designed for base station


    Original     		MW4IC2020/D MW4IC2020M MW4IC2020MBR1 MW4IC2020GMBR1 A113 AN1987 MW4IC2020GMBR1 PDF

    gsm signal amplifier

    Abstract: 500 watts amplifier schematic diagram A113 A114 A115 AN1955 C101 JESD22 MW6IC2015GNBR1 MW6IC2015NBR1
    Text: Freescale Semiconductor Technical Data Document Number: MW6IC2015N Rev. 1, 5/2006 RF LDMOS Wideband Integrated Power Amplifiers The MW6IC2015N wideband integrated circuit is designed for base station applications. It uses Freescale’s newest High Voltage 26 to 32 Volts LDMOS


    Original     		MW6IC2015N MW6IC2015N MW6IC2015NBR1 MW6IC2015GNBR1 gsm signal amplifier 500 watts amplifier schematic diagram A113 A114 A115 AN1955 C101 JESD22 MW6IC2015GNBR1 PDF

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MRF6S18060 Rev. 2, 5/2006 Freescale Semiconductor Technical Data Replaced by MRF6S18060NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.


    Original     		MRF6S18060 MRF6S18060NR1/NBR1. MRF6S18060MR1 MRF6S18060MBR1 MRF6S18060MR1 PDF

    MRF5S21045N

    Abstract: No abstract text available
    Text: Document Number: MRF5S21045 Rev. 2, 5/2006 Freescale Semiconductor Technical Data Replaced by MRF5S21045NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.


    Original     		MRF5S21045 MRF5S21045NR1/NBR1. MRF5S21045MR1 MRF5S21045MBR1 MRF5S21045MR1 MRF5S21045N PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRF9130L Rev. 3, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs MRF9130LR3 MRF9130LSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance


    Original     		MRF9130L MRF9130LR3 MRF9130LSR3 PDF

    MW4IC2020NBR1

    Abstract: A113 AN1955 AN1977 AN1987 MW4IC2020GNBR1
    Text: Freescale Semiconductor Technical Data Document Number: MW4IC2020N Rev. 9, 5/2006 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC2020N wideband integrated circuit is designed with on - chip matching that makes it usable from 1600 to 2400 MHz. This multi - stage


    Original     		MW4IC2020N MW4IC2020N MW4IC2020NBR1 MW4IC2020GNBR1 A113 AN1955 AN1977 AN1987 MW4IC2020GNBR1 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet April 2004 AGR09090EF 90 W, 865 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced data for global evolution


    Original     		AGR09090EF Hz--960 DS04-134RFPP DS04-068RFPP) PDF

    Johanson Technology

    Abstract: No abstract text available
    Text: Preliminary Data Sheet November 2003 AGR09090EF 90 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced


    Original     		AGR09090EF Hz--960 DS04-029RFPP DS04-005RFPP) Johanson Technology PDF

    733W

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF5S19060N/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S19060NR1 Designed for broadband commercial and industrial applications with


    Original     		MRF5S19060N/D MRF5S19060NR1 MRF5S19060NBR1 733W PDF

    Motorola 506

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MW4IC2020/D SEMICONDUCTOR TECHNICAL DATA The Wideband IC Line RF LDMOS Wideband Integrated Power Amplifiers The MW4IC2020M wideband integrated circuit is designed for base station applications. It uses Motorola’s newest High Voltage 26 to 28 Volts LDMOS IC


    Original     		MW4IC2020/D MW4IC2020M MW4IC2020MBR1 MW4IC2020GMBR1 Motorola 506 PDF

    MRF9130L

    Abstract: MRF9130LR3 MRF9130LSR3
    Text: MOTOROLA Order this document by MRF9130L/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF9130L MRF9130LR3 MRF9130LSR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies


    Original     		MRF9130L/D MRF9130L MRF9130LR3 MRF9130LSR3 MRF9130L MRF9130LR3 MRF9130LSR3 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF9130L Rev. 4, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9130LR3 MRF9130LSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance


    Original     		MRF9130L MRF9130LR3 MRF9130LSR3 MRF9130LR3 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRF9130L Rev. 3, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs MRF9130LR3 MRF9130LSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance


    Original     		MRF9130L MRF9130LR3 MRF9130LSR3 MRF9130LR3 PDF

    100B1R0BW

    Abstract: A113 A114 A115 AN1955 C101 JESD22 MRF5S19060MBR1 MRF5S19060MR1
    Text: Freescale Semiconductor Technical Data Document Number: MRF5S19060M Rev. 5, 5/2006 Replaced by MRF5S19060NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.


    Original     		MRF5S19060M MRF5S19060NR1/NBR1. MRF5S19060MR1 MRF5S19060MBR1 MRF5S19060MR1 100B1R0BW A113 A114 A115 AN1955 C101 JESD22 MRF5S19060MBR1 PDF