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    100A470JW Price and Stock

    Kyocera AVX Components 100A470JW150XT1K

    CAP CER 47PF 150V P90 0505
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    DigiKey 100A470JW150XT1K Reel 13,000 500
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    100A470JW150XT1K Cut Tape 75 1
    • 1 $1.06
    • 10 $0.796
    • 100 $0.5949
    • 1000 $0.5949
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    100A470JW150XT1K Digi-Reel 1
    • 1 $1.06
    • 10 $0.796
    • 100 $0.5949
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    Mouser Electronics 100A470JW150XT1K
    • 1 $1.54
    • 10 $1.16
    • 100 $0.863
    • 1000 $0.854
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    Richardson RFPD 100A470JW150XT1K 1,000
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    Kyocera AVX Components 100A470JW150XTV

    MLC A/B/R - Tape and Reel (Alt: 100A470JW150XTV)
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    Avnet Americas 100A470JW150XTV Reel 16 Weeks 500
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    Mouser Electronics 100A470JW150XTV
    • 1 $2.76
    • 10 $2.12
    • 100 $1.61
    • 1000 $1.13
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    Kyocera AVX Components 100A470JW150XT

    Silicon RF Capacitors / Thin Film 150volts 47pF 5%
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    Mouser Electronics 100A470JW150XT 782
    • 1 $2.76
    • 10 $2.12
    • 100 $1.61
    • 1000 $1.29
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    TTI 100A470JW150XT Reel 1,500 500
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    Richardson RFPD 100A470JW150XT 2,500 500
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    Kyocera AVX Components 100A470JWN150XT

    Silicon RF Capacitors / Thin Film
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 100A470JWN150XT 500
    • 1 $3.19
    • 10 $2.45
    • 100 $1.87
    • 1000 $1.31
    • 10000 $1.21
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    Kyocera AVX Components 100A470JW150XC100

    Silicon RF Capacitors / Thin Film 47PF 150V 5% 0505
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    Mouser Electronics 100A470JW150XC100
    • 1 $3.44
    • 10 $2.64
    • 100 $1.98
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    TTI 100A470JW150XC100 WAFL 100
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    Richardson RFPD 100A470JW150XC100 200
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    Find more 100A470JW price and stock on Findchips.com

    100A470JW Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    100A470JW150XT American Technical Ceramics Capacitors - Ceramic Capacitors - CAP CER 47PF 150V P90 0505 Original PDF
    100A470JW150XT1K American Technical Ceramics Ceramic Capacitor 47PF 150V P90 0505 Original PDF

    100A470JW Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AGR09030GUM

    Abstract: JESD22-C101A RF35
    Text: Preliminary Data Sheet August 2004 AGR09030GUM 30 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09030GUM is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular


    Original     		PDF AGR09030GUM Hz--895 AGR09030GUM DS04-246RFPP PB04-094RFPP) JESD22-C101A RF35

    Untitled

    Abstract: No abstract text available
    Text: T2G4005528-FS 55W, 28V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features


    Original     		PDF T2G4005528-FS T2G4005528-FS TQGaN25

    Untitled

    Abstract: No abstract text available
    Text: T2G4005528-FS 55W, 28V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features


    Original     		PDF T2G4005528-FS T2G4005528-FS

    T2G405528-FSEVB2

    Abstract: No abstract text available
    Text: T2G4005528-FS 55W, 28V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features


    Original     		PDF T2G4005528-FS T2G4005528-FS TQGaN25 T2G405528-FSEVB2

    J293

    Abstract: 100A470JW RM73B2B100J Transistor Z17 100B100JW AGR18125E AGR18125EF AGR18125EU JESD22-C101A
    Text: Product Brief AGR18125E 125 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18125E is a 125 W, 26 V, N-channel goldmetallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor


    Original     		PDF AGR18125E AGR18125E AGR18125EF AGR18125XF M-AGR21125F 12-digit J293 100A470JW RM73B2B100J Transistor Z17 100B100JW AGR18125EF AGR18125EU JESD22-C101A

    ATC 100pf 0603 CAPACITOR

    Abstract: 100A470JW150X RF 900MHz schematics for a PA amplifier GRM39X7R102K050V GSM transmitter LL1608-FH8N2K MAX2235 grm39x7r471k050 DASF0023420
    Text: Maxim > App Notes > WIRELESS, RF, AND CABLE Keywords: rf, rfic, pa, power amplifiers, transmitter, ism band, gsm, rf ics, integrated circuits May 01, 2002 APPLICATION NOTE 1005 Ultra-Low Cost +30dBm PA for GSM and 900MHz-ISM Applications Abstract: This application note, based on the MAX2235 power amplifier PA shows the operation in GSM and


    Original     		PDF 30dBm 900MHz-ISM MAX2235 900MHz RMC16-000T MAX2235EUP TSSOP-20) ATC 100pf 0603 CAPACITOR 100A470JW150X RF 900MHz schematics for a PA amplifier GRM39X7R102K050V GSM transmitter LL1608-FH8N2K grm39x7r471k050 DASF0023420

    Untitled

    Abstract: No abstract text available
    Text: T1G4005528-FS 55W, 28V, DC – 3.5GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Avionics Wideband or narrowband amplifiers Product Features


    Original     		PDF T1G4005528-FS T1G4005528-FS

    AGR26180EF

    Abstract: J500 JESD22-C101A j78 transistor j78 transistor equivalent
    Text: Preliminary Data Sheet May 2004 AGR26180EF 180 W, 2.535 GHz—2.655 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR26180EF is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for ultrahigh-frequency (UHF) applications,


    Original     		PDF AGR26180EF AGR26180EF DS04-112RFPP J500 JESD22-C101A j78 transistor j78 transistor equivalent

    AGR09045XUM

    Abstract: JESD22-C101A RF35 z24 mosfet RK73H2A10R0F
    Text: Preliminary Data Sheet April 2004 AGR09045XUM 45 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09045XUM is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular


    Original     		PDF AGR09045XUM Hz--895 AGR09045XUM DS04-138RFPP PB04-071RFPP) JESD22-C101A RF35 z24 mosfet RK73H2A10R0F

    T1G4005528-FS

    Abstract: C08BL242X-5UN-X0B 1078974 EAR99 RO3210 T1G4005528FS J546 CuMoCu VJ1206Y222KRA J-094
    Text: T1G4005528-FS 55W, 28V, DC – 3.5GHz, GaN RF Power Transistor Applications • Military radar • Civilian radar • Professional and military radio communications • Test instrumentation • Avionics • Wideband or narrowband amplifiers Product Features


    Original     		PDF T1G4005528-FS T1G4005528-FS C08BL242X-5UN-X0B 1078974 EAR99 RO3210 T1G4005528FS J546 CuMoCu VJ1206Y222KRA J-094

    MAX2235

    Abstract: RMC16-000T amplifier 900mhz 142-0701-801 LL1608-FH8N2K MAX2235EUP gsm amplifier schematic
    Text: WIRELESS, RF, AND CABLE May 01, 2002 Ultra-Low Cost +30dBm PA for GSM and 900MHzISM Applications This application note, based on the MAX2235 power amplifier PA shows the operation in GSM and 900MHz ISM band applications. +30dBm of output power is achieved with 40 percent efficiency. The device provides


    Original     		PDF 30dBm 900MHzISM MAX2235 900MHz 868MHz 900MHz-ISM 900MHz, de0805) RMC16-000T amplifier 900mhz 142-0701-801 LL1608-FH8N2K MAX2235EUP gsm amplifier schematic

    HP8482A

    Abstract: GRM42-6Y5V LL1608-FH8N2K capacitor 100pF 0805 datasheet GRM39COG MAX2235 MAX2235EVKIT HP8482 grm39x7r471k050 testing capacitors using a meter
    Text: 19-1463; Rev 0; 5/99 MAX2235 Evaluation Kit The MAX2235 evaluation kit EV kit simplifies evaluation of the MAX2235 power amplifier (PA). It enables testing of the device’s RF performance and requires no additional support circuitry. The EV kit’s signal inputs


    Original     		PDF MAX2235 824MHz 849MHz 800MHz 1000MHz. MAX2235 HP8482A GRM42-6Y5V LL1608-FH8N2K capacitor 100pF 0805 datasheet GRM39COG MAX2235EVKIT HP8482 grm39x7r471k050 testing capacitors using a meter

    Untitled

    Abstract: No abstract text available
    Text: T1G4005528-FS 55W, 28V, DC – 3.5GHz, GaN RF Power Transistor Applications • Military radar • Civilian radar • Professional and military radio communications • Test instrumentation • Avionics • Wideband or narrowband ampliiers Product Features


    Original     		PDF T1G4005528-FS T1G4005528-FS

    HP8482A

    Abstract: HP8482 GRM39COG101J 100A470JW150 HP8648C
    Text: 19-1463; Rev 2; 10/00 MAX2235 Evaluation Kit The MAX2235 evaluation kit EV kit simplifies evaluation of the MAX2235 power amplifier (PA). It enables testing of the device’s RF performance and requires no additional support circuitry. The EV kit’s signal inputs


    Original     		PDF MAX2235 824MHz 849MHz 800MHz 1000MHz. MAX2235 HP8482A HP8482 GRM39COG101J 100A470JW150 HP8648C

    LL1608-FH8N2K

    Abstract: MAX2235 MAX2235EVKIT testing capacitors using a meter SHORT NODE ON IC DEVICE 100A470JW
    Text: 19-1463; Rev 2; 10/00 MAX2235 Evaluation Kit The MAX2235 evaluation kit EV kit simplifies evaluation of the MAX2235 power amplifier (PA). It enables testing of the device’s RF performance and requires no additional support circuitry. The EV kit’s signal inputs


    Original     		PDF MAX2235 824MHz 849MHz 800MHz 1000MHz. MAX2235 LL1608-FH8N2K MAX2235EVKIT testing capacitors using a meter SHORT NODE ON IC DEVICE 100A470JW

    RK73H2A10R0F

    Abstract: AGR09060GUM JESD22-C101A RF35 RM73B2B103J
    Text: Preliminary Data Sheet July 2004 AGR09060GUM 60 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09060GUM is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular


    Original     		PDF AGR09060GUM Hz--895 AGR09060GUM m8109-9138 DS04-219RFPP PB04-073RFPP) RK73H2A10R0F JESD22-C101A RF35 RM73B2B103J

    RK73H2A10R0F

    Abstract: AGR09045GUM JESD22-C101A RF35 RM73B2b103j z24 mosfet
    Text: Preliminary Data Sheet October 2004 AGR09045GUM 45 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09045GUM is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular


    Original     		PDF AGR09045GUM Hz--895 AGR09045GUM DS05-015RFPP DS04-138RFPP) RK73H2A10R0F JESD22-C101A RF35 RM73B2b103j z24 mosfet

    Untitled

    Abstract: No abstract text available
    Text: T2G4005528-FS 55W, 28V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features


    Original     		PDF T2G4005528-FS T2G4005528-FS TQGaN25

    mmds

    Abstract: AGR26180EF J500 JESD22-C101A
    Text: Preliminary Data Sheet May 2004 AGR26180EF 180 W, 2.535 GHz—2.655 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR26180EF is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for ultrahigh-frequency (UHF) applications,


    Original     		PDF AGR26180EF AGR26180EF AGR19K180U AGR26180XF 12-digit mmds J500 JESD22-C101A