Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    100B6R8JW Search Results

    SF Impression Pixel

    100B6R8JW Price and Stock

    Kyocera AVX Components 100B6R8JW500XC100

    Silicon RF Capacitors / Thin Film MLC A/B/R
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 100B6R8JW500XC100
    • 1 $5.13
    • 10 $4.42
    • 100 $3.3
    • 1000 $2.67
    • 10000 $2.61
    		Get Quote
    Richardson RFPD 100B6R8JW500XC100 150 200
    • 1 -
    • 10 -
    • 100 -
    • 1000 $2.31
    • 10000 $2.05
    		Buy Now
    Chip1Stop 100B6R8JW500XC100 150
    • 1 -
    • 10 -
    • 100 $3.43
    • 1000 $3.43
    • 10000 $3.43
    		Buy Now

    Kyocera AVX Components 100B6R8JWN500XC100

    Silicon RF Capacitors / Thin Film MLC A/B/R
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 100B6R8JWN500XC100
    • 1 $5.91
    • 10 $5.09
    • 100 $3.8
    • 1000 $3.07
    • 10000 $3.01
    		Get Quote
    Richardson RFPD 100B6R8JWN500XC100 200
    • 1 -
    • 10 -
    • 100 -
    • 1000 $2.64
    • 10000 $2.35
    		Buy Now

    Kyocera AVX Components 100B6R8JW500XT

    Silicon RF Capacitors / Thin Film 500volts 6.8pF 5%
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 100B6R8JW500XT
    • 1 $4.7
    • 10 $4.05
    • 100 $3.46
    • 1000 $2.93
    • 10000 $2.93
    		Get Quote
    Richardson RFPD 100B6R8JW500XT 500
    • 1 -
    • 10 -
    • 100 -
    • 1000 $2.31
    • 10000 $2.05
    		Buy Now

    Kyocera AVX Components 100B6R8JW500XTV

    Silicon RF Capacitors / Thin Film 500V 6.8pF Tol 5% Las Mkg Vertical
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 100B6R8JW500XTV
    • 1 -
    • 10 -
    • 100 -
    • 1000 $2.93
    • 10000 $2.93
    		Get Quote
    TTI 100B6R8JW500XTV Reel 500
    • 1 -
    • 10 -
    • 100 -
    • 1000 $2.9
    • 10000 $2.9
    		Buy Now

    Kyocera AVX Components 100B6R8JWN500XTV

    Silicon RF Capacitors / Thin Film 500V 6.8pF Tol 5% Las Mkg Vertical
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 100B6R8JWN500XTV
    • 1 -
    • 10 -
    • 100 -
    • 1000 $2.56
    • 10000 $2.51
    		Get Quote
    Find more 100B6R8JW price and stock on Findchips.com

    100B6R8JW Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    J593

    Abstract: AGR21030E AGR21030EF AGR21030EU JESD22-C101A J157
    Text: Preliminary Data Sheet April 2004 AGR21030E 30 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21030E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband


    Original     		PDF AGR21030E AGR21030E AGR21030EU AGR21030EF DS04-163RFPP DS04-065RFPP) J593 AGR21030EF AGR21030EU JESD22-C101A J157

    J161 mosfet transistor

    Abstract: MOSFET J161 100B6R8JW
    Text: Preliminary Data Sheet July 2003 AGR21090E 90 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21090E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband


    Original     		PDF AGR21090E AGR21090EU AGR21090EF DS03-070RFPP DS02-276RFPP) J161 mosfet transistor MOSFET J161 100B6R8JW

    agere c8 c1

    Abstract: 100b8r2jw 100B6R8JW
    Text: Preliminary Data Sheet January 2003 AGR09045E 45 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09045E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular


    Original     		PDF AGR09045E Hz--895 DS02-219RFPP agere c8 c1 100b8r2jw 100B6R8JW

    AGR21045EF

    Abstract: AGR21045XF JESD22-C101A
    Text: Data Sheet June 2004 AGR21045EF 45 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21045EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access (W-CDMA), single and


    Original     		PDF AGR21045EF AGR21045EF DS04-241RFPP DS04-178RFPP) AGR21045XF JESD22-C101A

    AGR21030EF

    Abstract: 2.4 ghz mosfet AGR21030XF JESD22-C101A
    Text: AGR21030EF 30 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21030EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access (W-CDMA), single and


    Original     		PDF AGR21030EF AGR21030EF 1030EF AGR21030XF 21045F 12-digit 2.4 ghz mosfet AGR21030XF JESD22-C101A

    "RF Power Transistor"

    Abstract: AGR18030EF JESD22-C101A transistor equivalent table 557
    Text: AGR18030EF 30 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18030EF is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for global system for mobile communication


    Original     		PDF AGR18030EF AGR18030EF 21045F "RF Power Transistor" JESD22-C101A transistor equivalent table 557

    J964

    Abstract: AGR21045EF AGR21045XF JESD22-C101A
    Text: Data Sheet AGR21045EF 45 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21045EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access (W-CDMA), single and


    Original     		PDF AGR21045EF AGR21045EF CGR21045EF AGR21045XF 21045F 12-digit J964 AGR21045XF JESD22-C101A

    sm 4500

    Abstract: No abstract text available
    Text: Preliminary Data Sheet February 2004 AGR21125E 125 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21125E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access


    Original     		PDF AGR21125E AGR21125EU AGR21125EF AGR21125End sm 4500

    sm 4500

    Abstract: No abstract text available
    Text: Preliminary Data Sheet January 2003 AGR21125E 125 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21125E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access (WCDMA), single and multicarrier class AB wireless


    Original     		PDF AGR21125E AGR21125EU AGR21125EF DS03-037RFPP DS03-012RFPP) sm 4500

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet August 2003 AGR21045E 45 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21045E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband


    Original     		PDF AGR21045E AGR21045EU AGR21045EF DS02-380RFPP DS02-276RFPP)

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet November 2003 AGR21090E 90 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21090E is a high-voltage, gold-metalized, laterally diffused, metal oxide semiconductor LDMOS RF power transistor suitable for wideband


    Original     		PDF AGR21090E AGR21090EU AGR21090EF DS04-018RFPP DS03-070RFPP)

    J299

    Abstract: No abstract text available
    Text: Preliminary Data Sheet December 2003 AGR21090E 90 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21090E is a high-voltage, gold-metalized, laterally diffused, metal oxide semiconductor LDMOS RF power transistor suitable for wideband


    Original     		PDF AGR21090E AGR21090EU AGR21090EF DS04-059RFPP DS04-018RFPP) J299

    RF POWER MOSFET

    Abstract: No abstract text available
    Text: Preliminary Data Sheet February 2004 AGR21125E 125 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21125E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access


    Original     		PDF AGR21125E AGR21125EU AGR21125EF AG210-12, DS04-108RFPP DS04-038RFPP) RF POWER MOSFET

    AGR21090E

    Abstract: AGR21090EF JESD22-C101A mosfet 6 ghz
    Text: AGR21090E 90 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21090E is a high-voltage, gold-metalized, laterally diffused, metal oxide semiconductor LDMOS RF power transistor suitable for wideband


    Original     		PDF AGR21090E AGR21090E AGR21090EU AGR21090EF 1090EF AGR21090XF M-AGR21090F 12-digit AGR21090EF JESD22-C101A mosfet 6 ghz

    equivalent transistor PT 3500

    Abstract: 100B100JW500X AGR19125E AGR19125EF AGR19125EU JESD22-C101A
    Text: Preliminary Data Sheet April 2004 AGR19125E 125 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR19125E is a 125 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for


    Original     		PDF AGR19125E Hz--1990 AGR19125E AGR19125EU AGR19125EF IS-95 DS04-161RFPP DS04-035RFPP) equivalent transistor PT 3500 100B100JW500X AGR19125EF AGR19125EU JESD22-C101A

    C15B material sheet

    Abstract: C14A AGR21125E AGR21125EF AGR21125EU C10A C11A C12A C12D JESD22-C101A
    Text: Preliminary Data Sheet April 2004 AGR21125E 125 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21125E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access


    Original     		PDF AGR21125E AGR21125E AGR21125EU AGR21125EF DS04-166RFPP DS04-108RFPP) C15B material sheet C14A AGR21125EF AGR21125EU C10A C11A C12A C12D JESD22-C101A

    AGR21045E

    Abstract: AGR21045EF AGR21045EU JESD22-C101A 178rf
    Text: Data Sheet May 2004 AGR21045E 45 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21045E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband


    Original     		PDF AGR21045E AGR21045E AGR21045EU AGR21045EF car18109-9138 DS04-178RFPP DS04-164RFPP) AGR21045EF AGR21045EU JESD22-C101A 178rf

    100B100JW500X

    Abstract: AGR21125E AGR21125EF AGR21125EU JESD22-C101A
    Text: Preliminary Data Sheet November 2003 AGR21125E 125 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21125E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access (WCDMA), single and multicarrier class AB wireless


    Original     		PDF AGR21125E AGR21125E AGR21125EU AGR21125EF DS04-038RFPP DS03-037RFPP) 100B100JW500X AGR21125EF AGR21125EU JESD22-C101A

    transistor equivalent table 557

    Abstract: 21045F
    Text: AGR18030EF 30 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18030EF is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for global system for mobile communication


    Original     		PDF AGR18030EF DS04-204RFPP PB04-101RFPP) transistor equivalent table 557 21045F

    AGR21090

    Abstract: mosfet j460 AGR21090E AGR21090EF JESD22-C101A mosfet J442 100b6r8 100B8 100B6R8JW
    Text: Preliminary Data Sheet April 2004 AGR21090E 90 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21090E is a high-voltage, gold-metalized, laterally diffused, metal oxide semiconductor LDMOS RF power transistor suitable for wideband


    Original     		PDF AGR21090E AGR21090E AGR21090EU AGR21090EF DS04-165RFPP DS04-059RFPP) AGR21090 mosfet j460 AGR21090EF JESD22-C101A mosfet J442 100b6r8 100B8 100B6R8JW

    AGR21045E

    Abstract: AGR21045EF AGR21045EU JESD22-C101A 100B8 Agere Systems
    Text: Preliminary Data Sheet April 2004 AGR21045E 45 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21045E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband


    Original     		PDF AGR21045E AGR21045E AGR21045EU AGR21045EF DS04-164RFPP DS04-037RFPP) AGR21045EF AGR21045EU JESD22-C101A 100B8 Agere Systems

    AGR21030EF

    Abstract: AGR21030XF JESD22-C101A J622
    Text: Preliminary Data Sheet June 2004 AGR21030EF 30 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21030EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband


    Original     		PDF AGR21030EF AGR21030EF DS04-225RFPP DS04-200RFPP) AGR21030XF JESD22-C101A J622

    AGR18030EF

    Abstract: JESD22-C101A
    Text: Preliminary Data Sheet November 2004 AGR18030EF 30 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18030EF is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for global system for mobile communication


    Original     		PDF AGR18030EF AGR18030EF DS04-204RFPP PB04-101RFPP) JESD22-C101A

    J605

    Abstract: No abstract text available
    Text: Preliminary Data Sheet December 2003 AGR21030E 30 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21030E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband


    Original     		PDF AGR21030E AGR21030EU AGR21030EF Powe10-12, DS04-065RFPP J605