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    AGR09030EF Price and Stock

    Advanced Semiconductor Inc AGR09030EF

    RF MOSFET Transistors RF Transistor
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    Mouser Electronics AGR09030EF
    • 1 $39.76
    • 10 $35.43
    • 100 $31.1
    • 1000 $29.99
    • 10000 $29.99
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    AGR09030EF Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    AGR09030EF Agere Systems FET, 30W, 865MHz-895MHz, N-Channel E-Mode, Lateral MOSFET Original PDF
    AGR09030EF Agere Systems 30 W, 865 MHz - 895 MHz, N-Channel E-Mode, Lateral MOSFET Original PDF

    AGR09030EF Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet May 2004 AGR09030E 30 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09030E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular


    Original
    PDF AGR09030E Hz--895 DS04-197RFPP DS04-149RFPP)

    TRANSISTOR A114

    Abstract: AGR09030E AGR09030EF AGR09030EU JESD22-A114 CDM 82 RF MOSFET CLASS AB
    Text: Preliminary Product Brief April 2003 AGR09030E 30 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09030E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular


    Original
    PDF AGR09030E Hz--895 AGR09030E PB03-083RFPP PB03-073RFPP) TRANSISTOR A114 AGR09030EF AGR09030EU JESD22-A114 CDM 82 RF MOSFET CLASS AB

    transistor j210

    Abstract: 100B1R0BW J283 AGR09030E AGR09030EF AGR09030EU JESD22-C101A RM73B2B C1206C104KRAC7800 c.d.m. technology acp
    Text: AGR09030E 30 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09030E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular


    Original
    PDF AGR09030E Hz--895 AGR09030E AGR09030EU AGR09030EF transistor j210 100B1R0BW J283 AGR09030EF AGR09030EU JESD22-C101A RM73B2B C1206C104KRAC7800 c.d.m. technology acp

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet November 2003 AGR09030E 30 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09030E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular


    Original
    PDF AGR09030E Hz--895 DS04-025RFPP DS02-218RFPP)

    AGR09030E

    Abstract: AGR09030EF AGR09030EU JESD22-C101A J02-1
    Text: Preliminary Data Sheet April 2004 AGR09030E 30 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09030E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular


    Original
    PDF AGR09030E Hz--895 AGR09030E DS04-149RFPP DS04-025RFPP) AGR09030EF AGR09030EU JESD22-C101A J02-1

    AGRA10EM

    Abstract: APP550 APP550TM AGR09085EF APP550TM and APP530TM 400-kHz agra 30 TAAD08JU2 AGR09030EF AGR09030GUM
    Text: RF Power Transistor Line RF Power Environment Agere’s RF LDMOS transistors are used in wireless base stations to boost voice, data, and video signals in various frequency ranges. They are targeted for second-generation 2G , 2.5-generation (2.5G), and thirdgeneration (3G) base station


    Original
    PDF CA03-005RFPP-7 CA03-005RFPP-6) AGRA10EM APP550 APP550TM AGR09085EF APP550TM and APP530TM 400-kHz agra 30 TAAD08JU2 AGR09030EF AGR09030GUM

    transistor j210

    Abstract: AGR09030E JESD22-C101A AGR09030EF AGR09030EU agere c8 c1 TOWA
    Text: Preliminary Data Sheet November 2004 AGR09030E 30 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09030E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular


    Original
    PDF AGR09030E Hz--895 AGR09030E packag-9138 DS04-294RFPP DS04-197RFPP) transistor j210 JESD22-C101A AGR09030EF AGR09030EU agere c8 c1 TOWA

    C1206C104KRAC7800

    Abstract: RM73B2B473J
    Text: Preliminary Data Sheet August 2003 AGR09030E 30 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09030E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular


    Original
    PDF AGR09030E Hz--895 DS02-218RFPP C1206C104KRAC7800 RM73B2B473J