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Advanced Semiconductor Inc AGR09030EF RF MOSFET Transistors RF Transistor
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	AGR09030EF					1 $39.76 10 $35.43 100 $31.1 1000 $29.99 10000 $29.99	Get Quote

AGR09030E Datasheets (6)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
AGR09030E		Agere Systems	30W, 865MHZ- 895MHZ, N-Channel E-Mode, Lateral MOSTFET		Original	PDF
AGR09030E		TriQuint Semiconductor	30 W, 865 MHz-895 MHz, N-Channel E-Mode, Lateral MOSFET		Original	PDF
AGR09030EF		Agere Systems	FET, 30W, 865MHz-895MHz, N-Channel E-Mode, Lateral MOSFET		Original	PDF
AGR09030EF		Agere Systems	30 W, 865 MHz - 895 MHz, N-Channel E-Mode, Lateral MOSFET		Original	PDF
AGR09030EU		Agere Systems	FET, 30W, 865MHz-895MHz, N-Channel E-Mode, Lateral MOSFET		Original	PDF
AGR09030EU		Agere Systems	30 W, 865 MHz - 895 MHz, N-Channel E-Mode, Lateral MOSFET		Original	PDF

AGR09030E Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: Preliminary Data Sheet May 2004 AGR09030E 30 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09030E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular	Original	PDF	AGR09030E Hz--895 DS04-197RFPP DS04-149RFPP)
TRANSISTOR A114 Abstract: AGR09030E AGR09030EF AGR09030EU JESD22-A114 CDM 82 RF MOSFET CLASS AB Text: Preliminary Product Brief April 2003 AGR09030E 30 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09030E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular	Original	PDF	AGR09030E Hz--895 AGR09030E PB03-083RFPP PB03-073RFPP) TRANSISTOR A114 AGR09030EF AGR09030EU JESD22-A114 CDM 82 RF MOSFET CLASS AB
transistor j210 Abstract: 100B1R0BW J283 AGR09030E AGR09030EF AGR09030EU JESD22-C101A RM73B2B C1206C104KRAC7800 c.d.m. technology acp Text: AGR09030E 30 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09030E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular	Original	PDF	AGR09030E Hz--895 AGR09030E AGR09030EU AGR09030EF transistor j210 100B1R0BW J283 AGR09030EF AGR09030EU JESD22-C101A RM73B2B C1206C104KRAC7800 c.d.m. technology acp
Untitled Abstract: No abstract text available Text: Preliminary Data Sheet November 2003 AGR09030E 30 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09030E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular	Original	PDF	AGR09030E Hz--895 DS04-025RFPP DS02-218RFPP)
AGR09030E Abstract: AGR09030EF AGR09030EU JESD22-C101A J02-1 Text: Preliminary Data Sheet April 2004 AGR09030E 30 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09030E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular	Original	PDF	AGR09030E Hz--895 AGR09030E DS04-149RFPP DS04-025RFPP) AGR09030EF AGR09030EU JESD22-C101A J02-1
transistor j210 Abstract: AGR09030E JESD22-C101A AGR09030EF AGR09030EU agere c8 c1 TOWA Text: Preliminary Data Sheet November 2004 AGR09030E 30 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09030E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular	Original	PDF	AGR09030E Hz--895 AGR09030E packag-9138 DS04-294RFPP DS04-197RFPP) transistor j210 JESD22-C101A AGR09030EF AGR09030EU agere c8 c1 TOWA
C1206C104KRAC7800 Abstract: RM73B2B473J Text: Preliminary Data Sheet August 2003 AGR09030E 30 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09030E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular	Original	PDF	AGR09030E Hz--895 DS02-218RFPP C1206C104KRAC7800 RM73B2B473J
TGA2517 Abstract: TQP6M9002 TQM653029 TGS4304 SG-O1-16 TGA2503 TAT7469 TGA9092-SCC 854651 AH125 Text: 02/2010 Triquint SEMICONDUCTOR Product Selection Guide 2010 ABOUT TRIQUINT SEMICONDUCTOR ABOUT TRIQUINT SEMICONDUCTOR Corporate Headquarters – Hillsboro, Oregon Corporate Headquarters – Hillsboro, OR Semiconductor is Digital a leading TriQuint TriQuint	Original	PDF	cus937 TGA2517 TQP6M9002 TQM653029 TGS4304 SG-O1-16 TGA2503 TAT7469 TGA9092-SCC 854651 AH125
TGA2517 Abstract: TQP6M9002 TQM7M5013 TGA4943-SL CGB241 TQM6M4003 bt ag402 TGA4956-SM TQM6M4048 TGA9092-SCC Text: TABLE OF CONTENTS About TriQuint Semiconductor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 Guide by Market Automotive . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4	Original	PDF
AGRA10EM Abstract: APP550 APP550TM AGR09085EF APP550TM and APP530TM 400-kHz agra 30 TAAD08JU2 AGR09030EF AGR09030GUM Text: RF Power Transistor Line RF Power Environment Agere’s RF LDMOS transistors are used in wireless base stations to boost voice, data, and video signals in various frequency ranges. They are targeted for second-generation 2G , 2.5-generation (2.5G), and thirdgeneration (3G) base station	Original	PDF	CA03-005RFPP-7 CA03-005RFPP-6) AGRA10EM APP550 APP550TM AGR09085EF APP550TM and APP530TM 400-kHz agra 30 TAAD08JU2 AGR09030EF AGR09030GUM