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    RF35 Price and Stock

    Elpress AB KRF35-10

    BATTERY LUG 35 MM M10 2 AWG 3/8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey KRF35-10 Bulk 2,600 100
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    • 100 $2.9043
    • 1000 $2.9043
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    Elpress AB KRF35-8-45GR

    BATTERY LUG 45 35 MM M8, 2AWG
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey KRF35-8-45GR 1,499 100
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    • 100 $6.1693
    • 1000 $6.1693
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    Elpress AB KRF35-8-90GR

    BATTERY LUG 90 35 MM M8, 2AWG
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey KRF35-8-90GR 1,100 100
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    • 100 $3.8061
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    Elpress AB KRF35-10-90GR

    BATTERY LUG 90 35 MM M10 2 AWG
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey KRF35-10-90GR Bulk 500 100
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    • 100 $3.8807
    • 1000 $3.8807
    • 10000 $3.8807
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    Elpress AB KRF35-6

    BATTERY LUG 35 MM M6, 2 AWG
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey KRF35-6 Bulk 400 100
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    • 100 $2.9043
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    Find more RF35 price and stock on Findchips.com

    RF35 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    RF35 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    RF3501E RF Monolithics SAW Filters, Filters, FILTER SAW 866.1 MHZ Original PDF

    RF35 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: • • • • RF3501E 863.0 - 870.0 MHz Filter Optimized for use with the TRC103 Transceiver Balanced 150 ohm IC Interface Complies with Directive 2002/95/EC RoHS 866.1 MHz SAW Filter Pb Absolute Maximum Ratings Rating Value Units +15 dBm ±5 V Operating Temperature Range


    Original     		PDF RF3501E TRC103 2002/95/EC SM3030-8 RF3501E

    ferrite antenna

    Abstract: ferrite RF35 RF-45 2C10 FERRITE core datasheet ferrite cores RF10 PUF-D03CA IRL32
    Text: Sintered Ferrite Cores And Ferrite Powders For The RFID Systems Ferrites For The RFID Systems Sintered Ferrite Cores For Antennas And Shields RF RF10 series Ferrite Powders IR series 9 *1 *1. at 100kHz, 0.4A/m, 23 2 °C RF35 90 *1 RF45 RF70 RF75 230 *1 1300 *1


    Original     		PDF 100kHz, 16kA/m] PUF-D03CA ferrite antenna ferrite RF35 RF-45 2C10 FERRITE core datasheet ferrite cores RF10 IRL32

    RF3501E

    Abstract: TRC103 1218 footprint dimension
    Text: • • • • RF3501E 863.0 - 870.0 MHz Filter Optimized for use with the TRC103 Transceiver Balanced 150 ohm IC Interface Complies with Directive 2002/95/EC RoHS 866.1 MHz SAW Filter Pb Absolute Maximum Ratings Rating Value Units +15 dBm ±5 V Operating Temperature Range


    Original     		PDF RF3501E TRC103 2002/95/EC SM3030-8 RF3501E 1218 footprint dimension

    rf35

    Abstract: RF10 RF-35 RF-45 RFID
    Text: TDK CORPORATION TDK CORPORATION RF, IR series Ni-Zn RF10 9* *1. at 100kHz, 0.4A/m, 23 2 °C RF35 1 90 * Mn-Zn RF45 1 RF70 230 * *2. at 1kHz, 0.4A/m, 23 1 1300 * RF75 1 1800 *2 2°C * RoHS指令対応：EU Directive を使用していないことを表します。


    Original     		PDF 100kHz, 2002/95/EC 56MHz 952954MHz 56MHzRFIDPDA 120150kHz 56MHzRFID 3m34m4 680mm BSF-D03JD rf35 RF10 RF-35 RF-45 RFID

    AGR19045XF

    Abstract: No abstract text available
    Text: Preliminary Data Sheet June 2004 AGR19045EF 45 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19045EF is a 45 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for


    Original     		PDF AGR19045EF Hz--1990 AGR19045XF

    TH 2190 HOT Transistor

    Abstract: No abstract text available
    Text: Preliminary Data Sheet March 2004 AGR21180EF 180 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband


    Original     		PDF AGR21180EF TH 2190 HOT Transistor

    X3DC18E2S

    Abstract: No abstract text available
    Text: Model X3DC18E2S Rev B PRELIMINARY Doherty Combiner b Description The X3DC18E2S is a low profile, high performance Doherty Combiner in a new easy to use, manufacturing friendly surface mount package. The X3DC18E2S is designed particularly for Doherty Amplifier


    Original     		PDF X3DC18E2S X3DC18E2S RF-35, RO4350 20log

    12065G105AT2A

    Abstract: j292 MRF7S18125 F 365 R A114 A115 AN1955 C101 JESD22 RF35
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S18125BH Rev. 0, 11/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S18125BHR3 MRF7S18125BHSR3 Designed for GSM and GSM EDGE base station applications with


    Original     		PDF MRF7S18125BH MRF7S18125BHR3 MRF7S18125BHSR3 MRF7S18125BHR3 12065G105AT2A j292 MRF7S18125 F 365 R A114 A115 AN1955 C101 JESD22 RF35

    RFH54006WG

    Abstract: a652 RFHD4012 IEC60335-1 Schrack rf RFH34012WG12VDC
    Text: General Purpose Relays PCB Relays SCHRACK Power Relay RF n 1 pole 16A, 1 form A NO or 1 form B (NC) contact power 400mW n Reinforced insulation (EN 61810, 60335, 60730) n Ambient temperature up to 105°C n Quick connect terminals for load side n WG version: Materials in accordance to IEC 60335-1


    Original     		PDF 400mW UL1446 60VDC F0273-BI E214025, 250VAC 12VDC RFH54006WG a652 RFHD4012 IEC60335-1 Schrack rf RFH34012WG12VDC

    RF35

    Abstract: No abstract text available
    Text: BLF6G27-10; BLF6G27-10G WiMAX power LDMOS transistor Rev. 01 — 4 February 2009 Product data sheet 1. Product profile 1.1 General description 10 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance


    Original     		PDF BLF6G27-10; BLF6G27-10G ACPR885k ACPR1980k BLF6G27-10 BLF6G27-10G RF35

    TRANSISTOR J601

    Abstract: gp816 RF35 J2396 J249
    Text: BLF6G38-10; BLF6G38-10G WiMAX power LDMOS transistor Rev. 01 — 3 February 2009 Product data sheet 1. Product profile 1.1 General description 10 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3600 MHz. Table 1. Typical performance


    Original     		PDF BLF6G38-10; BLF6G38-10G ACPR885k ACPR1980k BLF6G38-10 BLF6G38-10G TRANSISTOR J601 gp816 RF35 J2396 J249

    6603 Shenzhen

    Abstract: AGR19045E AGR19045EF AGR19045EU CDR33BX104AKWS JESD22-C101A transistor J600 J600 transistor
    Text: Preliminary Data Sheet April 2004 AGR19045E 45 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19045E is a 45 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for


    Original     		PDF AGR19045E Hz--1990 AGR19045E DS04-077RFPP DS02-378RFPP) 6603 Shenzhen AGR19045EF AGR19045EU CDR33BX104AKWS JESD22-C101A transistor J600 J600 transistor

    J593

    Abstract: AGR21030E AGR21030EF AGR21030EU JESD22-C101A J157
    Text: Preliminary Data Sheet April 2004 AGR21030E 30 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21030E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband


    Original     		PDF AGR21030E AGR21030E AGR21030EU AGR21030EF DS04-163RFPP DS04-065RFPP) J593 AGR21030EF AGR21030EU JESD22-C101A J157

    transistor 7350

    Abstract: agere c8 c1 transistor 7350 A 100B100JCA500X AGR19060E AGR19060EF AGR19060EU JESD22-C101A j496
    Text: Preliminary Data Sheet April 2004 AGR19060E 60 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19060E is a 60 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—


    Original     		PDF AGR19060E Hz--1990 AGR19060E DS04-159RFPP DS04-078RFPP) transistor 7350 agere c8 c1 transistor 7350 A 100B100JCA500X AGR19060EF AGR19060EU JESD22-C101A j496

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRF9080 Rev. 5, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband performance of these devices make them ideal for large−signal, common−


    Original     		PDF MRF9080 MRF9080LR3 MRF9080LSR3

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRF9100 Rev. 3, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs MRF9100R3 MRF9100SR3 Designed for GSM and EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance of these


    Original     		PDF MRF9100 MRF9100R3 MRF9100SR3 MRF9100R3

    Untitled

    Abstract: No abstract text available
    Text: Model X3DC09E2S RevA Doherty Combiner b Description The X3DC09E2S is a low profile, high performance Doherty Combiner in a new easy to use, manufacturing friendly surface mount package. The X3DC09E2S is designed particularly for Doherty Amplifier applications, where tightly controlled phase and amplitude imbalance as


    Original     		PDF X3DC09E2S X3DC09E2S RF-35, RO4350 20log

    RF power amplifier MHz

    Abstract: No abstract text available
    Text: Model X3DC21E2S Rev A Doherty Combiner b Description The X3DC21E2S is a low profile, high performance Doherty Combiner in a new easy to use, manufacturing friendly surface mount package. The X3DC21E2S is designed particularly for Doherty Amplifier applications, where tightly controlled phase and amplitude imbalance


    Original     		PDF X3DC21E2S X3DC21E2S RF-35, RO4350 20log RF power amplifier MHz

    BLF7G20L-90P

    Abstract: 1800 ldmos BLF7G20LS-90P RF35 PLW70
    Text: BLF7G20L-90P; BLF7G20LS-90P Power LDMOS transistor Rev. 01 — 28 April 2010 Product data sheet 1. Product profile 1.1 General description 90 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance


    Original     		PDF BLF7G20L-90P; BLF7G20LS-90P ACPR400k ACPR600k BLF7G20L-90P 7G20LS-90P 1800 ldmos BLF7G20LS-90P RF35 PLW70

    BLF7G20LS-140P

    Abstract: 850 SMD Rework Station RF35
    Text: BLF7G20LS-140P Power LDMOS transistor Rev. 2 — 17 August 2010 Product data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance


    Original     		PDF BLF7G20LS-140P ACPR400k ACPR600k BLF7G20LS-140P 850 SMD Rework Station RF35

    AGR09030GUM

    Abstract: JESD22-C101A RF35
    Text: Preliminary Data Sheet August 2004 AGR09030GUM 30 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09030GUM is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular


    Original     		PDF AGR09030GUM Hz--895 AGR09030GUM DS04-246RFPP PB04-094RFPP) JESD22-C101A RF35

    Z9 TRANSISTOR SMD

    Abstract: AGR18045E JESD22-C101A agere c8 c1 transistor smd z9 grm216r71h transistor smd z8
    Text: Preliminary Data Sheet November 2004 AGR18045E 45 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18045E is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for global system for mobile communication


    Original     		PDF AGR18045E AGR18045E DS03-186RFPP Z9 TRANSISTOR SMD JESD22-C101A agere c8 c1 transistor smd z9 grm216r71h transistor smd z8

    Untitled

    Abstract: No abstract text available
    Text: BLF10M6135; BLF10M6LS135 Power LDMOS transistor Rev. 1 — 24 June 2014 Product data sheet 1. Product profile 1.1 General description 135 W LDMOS power transistor for industrial applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance


    Original     		PDF BLF10M6135; BLF10M6LS135 BLF10M6135

    J122 SMD TRANSISTOR

    Abstract: BLC6G22L-40BN/2 800B BLF6G22L-40BN
    Text: BLF6G22L-40BN Power LDMOS transistor Rev. 1 — 30 August 2010 Product data sheet 1. Product profile 1.1 General description 40 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.


    Original     		PDF BLF6G22L-40BN J122 SMD TRANSISTOR BLC6G22L-40BN/2 800B BLF6G22L-40BN