Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    VG 10 SAMSUNG Search Results

    VG 10 SAMSUNG Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BCM 4335

    Abstract: relay btk 1012 ADP 3208 bcm 3380 btk 1012 1664810000 97ATEX6007X DIN EN 60999-1 HD 11070 moduflex
    Text: Company profile Weidmüller is the leading manufacturer of components for electrical and electronic interconnection technologies. The company develops, produces and sells customer-oriented solutions comprising the entire Weidmüller product portfolio. As an OEM supplier, the company sets global standards in the


    Original     		PDF

    2N6155

    Abstract: BUZ24 4900 SIEMENS BUZ10 buz90 buzh bup 314 BUZ11 F133 251C
    Text: - 272 - m % f m * £ fê Ta=25,C Vg s t Vd s or Vd g (V) (V) *± £ V ÎD Pd %i * /CH * /CH (A) (W) (nA) Vg s th) Id s s ÎGSS Vg s (V) BS1Ü7A MOT N 200 ±20 0.25 0.6 10 15 BS170 MOT N 60 ±20 0.5 0.83 10 15 BSS123 MOT N 100 ±20 0.17 0.55 50 20 BUZ11 MOT


    OCR Scan     		PDF BSI07A O-226kk BS170 O-226AA BSS123 O-236AA O-220AB BUZ171 O-220ftB irf120 2N6155 BUZ24 4900 SIEMENS BUZ10 buz90 buzh bup 314 BUZ11 F133 251C

    1RF530

    Abstract: 1RF540 1rf630 RF543 BS107PT BS250F SD210 SD211 SD212 TD-12
    Text: - 244 - ä! € tt f # t Vd s * $ fg Vg s Ta=25‘ C ie. IGSS Pd Id Vg s ID S S th) or € * /CH * /CH (A) m (Ta^'C) Ciss max Vd s (V) Vg s (V) 14 Coss Crss (V) (nA) SD2 1 0 CALOGIC N 30 ± 40 5 0m 1. 2 SD211 CALOGIC N 30 25 50m 1. 2 SD212 CALOGIC N 10 ± 40


    OCR Scan     		PDF Ta-2510) SD210 TD-12 SD211 SD212 S0213 O-220AB IRF630 IRF631 1RF530 1RF540 1rf630 RF543 BS107PT BS250F TD-12

    IRF224

    Abstract: IRF154 N IRF034 IRF035 IRF123 IBF220
    Text: - 250 - T a = 2 5 <1C f t m € tt Vd s Vg s l: 1D SS Jg s s Pd Id Vg s th) 4- Vd g If (V) * /CH * /CH (A) (W) (V) (nA) (V) C m A) Vd s (V) (V) Id (mA) (V) 25 T O - 2 2 0 A B 18 13 0 0 * 650* 100* 25 T O - 2 0 4 A E 25 10 9. 3 18 13 0 0 * 650* 100* 25 T O - 2 0 4 A E


    OCR Scan     		PDF 1RF9Z32 O-220AB 1RF48 IRF034 O-204AE IRF250 IRF252 IRF224 IRF154 N IRF035 IRF123 IBF220

    irf113

    Abstract: IRF224 buz90 buzh F133 IRF035 IRF034 IRF123
    Text: - 250 T a = 2 5 <1C f t m € tt Vd s Vg s l: 1D SS Jg s s Pd Id Vg s th) 4- Vd g If (V) * /CH * /CH (A) (W) (V) (nA) (V) C m A) Vd s (V) (V) Id (mA) (V) 25 T O - 2 2 0 A B 18 13 0 0 * 650* 100* 25 T O - 2 0 4 A E 25 10 9. 3 18 13 0 0 * 650* 100* 25 T O - 2 0 4 A E


    OCR Scan     		PDF 1RF9Z32 O-220AB 1RF48 IRF034 O-204AE IRF250 IRF252 irf113 IRF224 buz90 buzh F133 IRF035 IRF123

    1RF9620

    Abstract: 1RF9540 1RF9622 IRF9532 IRF9522 IRF9523 IRF9611 IRF9630 samsung IRF9613 IRF9240
    Text: - W. f Ä * £ fê 13=25*0 m % tt % IRF9240 tR F 9 2 41 SAMSUNG SAMSUNG IRF9242 IRF9243 IRF9510 SAMSUNG SAMSUNG SAMSUNG 1RF9511 IRF9512 IRF9513 SAMSUNG SAMSUNG SAMSUNG 1RF9520 IRF9521 IRF9522 IRF9523 IRF953Ü IRF9531 IRF9532 IRF9533 IRF954Q IRF9541 íR F 9 542


    OCR Scan     		PDF -25cC) IRF9240 IRFS241 25F9542 O-220 IRF9543 IRF961G IRF9612 1RF9620 1RF9540 1RF9622 IRF9532 IRF9522 IRF9523 IRF9611 IRF9630 samsung IRF9613

    KMM5324100V

    Abstract: No abstract text available
    Text: KMM53241OOV/VG/VP DRAM MODULES 4M X 32 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5324100V is a 4M bit x 32 Dynamic RAM high density memory module. The Samsung KMM5324100V consist of eight C M O S 4M x 4 bit


    OCR Scan     		PDF KMM53241OOV/VG/VP 110ns 130ns 150ns KMM5324100V 24-pin 72-pin 22/iF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b7E ]> QD1SSSQ ^35 I SMGK • KM M5324000V/VG/VP DRAM MODULES 4M x32 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5324000V is a 4M bitsx32 Dynamic RAM high density memory module. The Samsung


    OCR Scan     		PDF M5324000V/VG/VP KMM5324000V bitsx32 24-pin 72-pin 110ns KMM5324000V-7 130ns KMM5324000V-8

    Untitled

    Abstract: No abstract text available
    Text: SA MS UN G E L E C T R O N I C S b7E D INC T T b M l H S D D 1 5 2 4 4 b31 • SMÛK ■ KM M53241OOV/VG/VP DRAM MODULES 4 M x 3 2 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5324100V is a 4M bit x 32 Dynamic


    OCR Scan     		PDF M53241OOV/VG/VP KMM5324100V 24-pin 72-pin 22/jF 110ns KMM5324100V-7 130ns KMM5324100V-8

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b?E D • 7 ^ 4 1 4 5 QQ152fit. 0^0 I SMGK KM M53281OOV/VG/VP DRAM MODULES 8 M x 3 2 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5328100V is a 8M bit x 32 Dynamic RAM high density memory module. The Samsung


    OCR Scan     		PDF QQ152fit. M53281OOV/VG/VP KMM5328100V 24-pin 72-pin 22/xF KMM5328100V-6 110ns KMM532810QV-7

    dxo 1100

    Abstract: Y312
    Text: PRELIMINARY SPECIFICATION KS0642 300/312CH SOURCE DRIVER FOR TFT LCD KS0642 64G/S 300/312CH. TFT LCD SOURCE DRIVER 1997. 7 . 21 SAMSUNG ELECTRONICS CO. LDI-97-P004-R0 97-07-21 ELECTRONICS 1 PRELIMINARY SPECIFICATION KS0642 300/312CH SOURCE DRIVER FOR TFT LCD


    OCR Scan     		PDF KS0642 300/312CH 64G/S 300/312CH. LDI-97-P004-R0 KS0642 Page14> dxo 1100 Y312

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b4E D • 7Tbm42 GD12174 71b «SflG K N-CHANNEL POWER MOSFETS IRF620/621/622/623 FEATURES • • • • • • • Lower R d s ON Improved Inductive ruggedness Fast switching times R ugged polysilicon gate cell structure Lower input capacitance


    OCR Scan     		PDF 7Tbm42 GD12174 IRF620/621/622/623 IRF620 IRF621 IRF622 IRF623

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b4E D • 7 S b 4 1 4 B DQlSlMt. ÒSI ■ SM6K N-CHANNEL IRF510/511 /512/513 POWER MOSFETS FEATURES • Lower R d s <on > • • • • • • Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure


    OCR Scan     		PDF IRF510/511 IRF510 IRF51 IRF513 IRF511 IRF512 G012150

    IRF*125

    Abstract: s4c diode IRFR IRFR020 0MFL IRFU025
    Text: SAMSUNG ELECTRONICS INC b4E D • 7^4142 IRFR020/22/24/25 IRFU020/22/24/25 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • □□1232Q 307 ■ SMGK D-PACK L ow e r R d s <o n > Im p ro ve d in du ctive r u g g e d n e s s F a s t s w itc h in g tim e s


    OCR Scan     		PDF IRFR020/22/24/25 IRFU020/22/24/25 ib4142 IRFR020/U020 IRFR022/U022 IRFR024/U024 IRFR025/U025 IRFR020/012 IRFR024/025 IRFU020/012 IRF*125 s4c diode IRFR IRFR020 0MFL IRFU025

    HMR-11000

    Abstract: HMR11000
    Text: SAMSUNG ELECTRONICS INC O HARRIS bOE D 7 ^ 4 1 4 5 OGlliaO ^05 HMR-11000 GaAs MMIC Attenuator DC-18 GHz PRODUCT DATA Features Applications * Low VSWR • Gain Control * Ultra Low Power Consumption • Temperature Compensation * Voltage Controlled Impedence


    OCR Scan     		PDF HMR-11000 DC-18 HMR-11000 HMR11000

    ssh20n50

    Abstract: ssm20n45 20N45 2on50 20n50
    Text: D E j ? ci b m 4 2 000S3Û7 1 | : N-CHÂNNEL * POWER MOSFETS ? / \ -fó SAMSUNG SE MI CO NDUCT OR INC 2 SSM20N45/20N50 SSH20N45/20N50 ’ •> f Preliminary Specifications PRODUCT SUMMARY 500 Volt, 0.3 Ohm SFET V ds RoS on Id SSM20N45 450V 0.3 0 20A SSM20N50


    OCR Scan     		PDF SSM20N45/20N50 SSH20N45/20N50 000S3 SSM20N45 SSM20N50 SSM20N50 00GS435 ssh20n50 20N45 2on50 20n50

    IRF530

    Abstract: IRF5303 IR IRF532 IRF530 mosfet IRFP130 OF IRF530 irf532 IRF531 reliability irf530 IRFP131
    Text: SAMSUNG ELECTRONICS INC b4E P • 7^*4142 00121S7 h37 ■ SMGK N-CHANNEL POWER MOSFETS IRF530/531/532/533 IRFP130/131 /132/133 FEATURES TO-220 • Low er R d s <o n > • • • • • • Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure


    OCR Scan     		PDF 00121S7 IRF530/531/532/533 IRFP130/131 IRF530/IRFP130 IRF531 IRF532/IRFP1 IRF533/IRFP133 O-220 IRFP130/131/132/133 IRF530 IRF5303 IR IRF532 IRF530 mosfet IRFP130 OF IRF530 irf532 reliability irf530 IRFP131

    IRF440

    Abstract: DDD511B DDD5141 IRF44 IRF441 IRF442 IRF443 mosfet 441 7964 mosfet
    Text: 7964142 DE I T T b m M E SAMSUNG S E M I C O N D UCTOR 98D IN C D T S f -t3 05139 N-CHANNEL POWER MOSFETS □ □ □ S 1 3 ci 1 IRF440/441/442/443 FEATURES Low RD£i on at high voltage Improved inductive ruggedness Excellent high voltage stability Fast switching times


    OCR Scan     		PDF S13ci IRF440/441/442/443 IRF440 IRF441 IRF442 IRF443 DDD511B DDD5141 IRF44 mosfet 441 7964 mosfet

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b4E D • 7^4142 IRFZ44/45 IRFZ40/42 QD124SD TES ■ SIIGK N-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower R d s o n Improved inductive ru gge d n e ss Fast sw itching tim es R u g g e d polysilicon gate cell structure


    OCR Scan     		PDF IRFZ44/45 IRFZ40/42 QD124SD IRFZ44 IRFZ40 IRFZ45 GQ12454

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b4E ]> • 7^4142 FEATURES • • • • • • • QGISSÔR 02Ô « S U G K P-CHANNEL POWER MOSFETS IRF9Z14/Z15 IRF9Z10/Z12 TO-220 Lower R d s o n Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure


    OCR Scan     		PDF IRF9Z14/Z15 IRF9Z10/Z12 O-220 IRF9Z10 7Tb4142 00122C

    IRF413

    Abstract: 1RF530 IRF449 IRF460 RF543 samsung irf540 1RF540 1RF620 irf362 IRF448
    Text: - 244 - f ä! SD210 SD211 SD212 S0213 S02T4 SD215 SD211 SD219 BS107P BSI07PT BSUOF BS17ÜP DS250F BS250P 1RF 520 IRF521 IRF522 IRF523 IRF530 IRF531 IRF532 IRF533 IRF620 IRF621 IRF622 IRF623 IRF630 IRF631 1RF632 IRF633 € tt € CALOGIC CALOGIC CALOGIC CALOGIC


    OCR Scan     		PDF Ta-2510) SD210 TD-12 SD211 SD212 S0213 O-220AB IRF630 IRF631 IRF413 1RF530 IRF449 IRF460 RF543 samsung irf540 1RF540 1RF620 irf362 IRF448

    1rf520

    Abstract: 1RF540 1RF620 1RF640 IRF510 RF523 IRF530 IRF532 IRF533 IRF541
    Text: - 253 £> tt £ f m * £ V Vd s Vg s € Id Pd Vg s th lo s s I gss or * V dg Hr V) (V) ft eg. t S (Ta=25*0) * /CH * /CH (A) m (nA) Vg s (V) ( m A) Vd s (V) min max (V) (V) Id (mA) (Ta=25T3) lo (o n ) F Ds(on) Vd s = Vg s 14 C is s g fs Coss ft & 11 m Vg s =0


    OCR Scan     		PDF 1RF522 O-220AB RF523 IRF530 O-220 1RF620 1rf520 1RF540 1RF640 IRF510 IRF532 IRF533 IRF541

    IRF9521

    Abstract: f9520 IRF9520 Samsung
    Text: SAMSUNG ELECTRONICS INC b4E D • 71134142 DP12S4Ô 5 0 5 « S I I G K P-CHANNEL POWER MOSFETS IRF9520/9521/9522/9523 FEATURES • • • • • • • Lower Rqs o n Improved inductive ruggedness Fast sw itching tim es Rugged poiysilicon gate cell structure


    OCR Scan     		PDF DP12S4Ã IRF9520/9521/9522/9523 F9520 F9512 F9523 IRF9520 IRF9521 IRF9522 IRF9523 IRF9521 f9520 IRF9520 Samsung

    IRF411

    Abstract: IRF449 1RF540 irf413 1RF620 1rf520 irf362 IRF352 IRF353 IRF421
    Text: - 252 - Mi m *± « % Vds Vg s or * Vd g % 1RF35! IRF353 IR !R IR IRF360 IRF362 IRF420 IRF421 IRF422 IRF423 IRF430 IRF431 IRF432 IRF433 IRF440 IRF441 IRF442 IRF443 IRF448 IRF449 IRF450 IRF451 IRF452 IRF453 IRF460 IRF462 IRF510 IR IR IR IR IR IR IR IR IR IR


    OCR Scan     		PDF Ta-25 IRF352 IRF353 IRF360 O-204AE IRF362 TQ-204AE IRF421 O-3150 O-204AA IRF411 IRF449 1RF540 irf413 1RF620 1rf520 irf362 IRF352 IRF353 IRF421