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    IRFP131 Search Results

    IRFP131 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRFP131 Unknown FET Data Book Scan PDF
    IRFP131 Samsung Electronics N-CHANNEL POWER MOSFETS Scan PDF

    IRFP131 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SSH60N06

    Abstract: IRFP141 IRFP142 IRFP143 Irfp250 irfp254 IRFP230 IRFP242 IRFP130 IRFP333 SSH40N15A
    Text: POWER MOSFETs FUNCTION GUIDE TO-3P N-CHANNEL BVdss V ID(onXA) RDS(onXG) Part Number 60.00 60.00 60.00 0.03 0.025 SSH60N06 SSH60N06A 80.00 12.00 14.00 25.00 28.00 34.00 40.00 0.23 0.16 0.10 0.077 0.080 0.055 IRFP133 IRFP131 IRFP143 IRFP141 IRFP153 IRFP151


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    PDF SSH60N06 SSH60N06A IRFP133 IRFP131 IRFP143 IRFP141 IRFP153 IRFP151 IRFP132 IRFP130 IRFP142 Irfp250 irfp254 IRFP230 IRFP242 IRFP333 SSH40N15A

    IRF5303

    Abstract: irf530 diode IR 132 E FP133 IRF530-3 IR 126 D 34 FP-13 IRF532 F532 FP132
    Text: IRF530/531/532/533 IRFP130/131/132/133 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • TO-220 Lower Ros ON Improved inductive ru gg ed ness Fast sw itching tim es Rugged p olysilicon gate cell structure Lower input capacitance Extended safe operating area


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    PDF IRF530/531/532/533 IRFP130/131/132/133 O-220 IRF5303 irf530 diode IR 132 E FP133 IRF530-3 IR 126 D 34 FP-13 IRF532 F532 FP132

    IRF 544 N MOSFET

    Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511
    Text: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no


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    PDF

    1RF9640

    Abstract: IRFP120 IRFP123 IRFP143 IRFA1Z0 IRFP220 IRFP230 IRFP142 TO-3P IRFP121
    Text: - 298 - f m % *± € i m ± £ f é T a - 2 5 ^ ft V Vd s Vg s or Vdg Id Pd ♦ /CH (V) (A) I g ss Vg s th ) I dss * /CH (nA) Vg s (V) ( ma) Vd s (V) min max (V) (V) % Id (mA) (T a = 2 5 ^ ) (ft RD s(on) Vd s= Vg s Io (o n ) C is s g fs Coss C rss 5* B


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    PDF Ta-25 1RF9632 O-220 1RF9633 T0-220 1RF9640 1RF9641 IRFP120 IRFP123 IRFP143 IRFA1Z0 IRFP220 IRFP230 IRFP142 TO-3P IRFP121

    1rfp360

    Abstract: IRFP143 1rfp254 IRFP240 irfa1z0 IRFP230 IRFP141 IRFP151 IRFP153 IRFP241
    Text: - M tt % f ft ± ï Vd s or i Vd g k V £ £ Vg s (V) fë 1 (Ta=25°C) Id Pd * /CH * /CH (A) (W) Ig ss (nA) V g s th) Id ss Vg s (V) min max (V) (V) a ) (V) (nA) fè FD s ( o n ) Vd s = Vg s Id Vd s (m ft % g fs Io(on) Ciss Coss Crss * B m % Vg s =0 (max)


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    PDF O-247AC IRFP141 IRFP14! T0-247AC IRFPI41 IRFP142 IRFP143 IRFP150 IRFP152 1rfp360 1rfp254 IRFP240 irfa1z0 IRFP230 IRFP151 IRFP153 IRFP241

    1RFD110

    Abstract: 1RF840 IRFA1Z0 IRFP120 IRFP230 1RF740 1RF9641 1RF640 IRFP150 IRF641
    Text: - 275 f m ± t £ tt £ Vd s or Ta=25<C Vg s • f Vd g h (V) (V) ee. 1GSS Pd Id * /CH * /CH (A) m V g s th) 1DSS Vg s (V) (HA) Vd s (V) (V) t± (Ta=25°C) Id (mA) fv) urss Coss Ciss Vd s = Vg s max (nA) ft ii l ft & m % V g s =0 (max) *typ (0) *typ (A)


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    PDF Taz25cC) 1RF640 O-220AB IRF641 1RF642 IRFPI41 IRFP142 IRFP143 1RFD110 1RF840 IRFA1Z0 IRFP120 IRFP230 1RF740 1RF9641 IRFP150

    IRF740 "direct replacement"

    Abstract: irf9640 REPLACEMENT GUIDE IRF9540 replacement IRF640 irf510 2Sk350 HITACHI IRF9613 rca9213a buz11 cross reference sgsp467 fu120
    Text: CROSS REFERENCE GUIDE POWER MOSFETs Inter­ national Rectifier SAMSUNG Direct Replace­ ment Inter­ national Rectifier SAMSUNG Direct Replace­ ment Inter­ national Rectifier SAMSUNG Direct Replace­ ment Inter­ national Rectifier SAMSUNG Direct Replace­


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    PDF IRF510 IRF511 IRF512 IRF513 IRF520 IRF521 IRF522 IRF523 IRF610 IRF611 IRF740 "direct replacement" irf9640 REPLACEMENT GUIDE IRF9540 replacement IRF640 irf510 2Sk350 HITACHI IRF9613 rca9213a buz11 cross reference sgsp467 fu120

    IRF530

    Abstract: IRF5303 IR IRF532 IRF530 mosfet IRFP130 OF IRF530 irf532 IRF531 reliability irf530 IRFP131
    Text: SAMSUNG ELECTRONICS INC b4E P • 7^*4142 00121S7 h37 ■ SMGK N-CHANNEL POWER MOSFETS IRF530/531/532/533 IRFP130/131 /132/133 FEATURES TO-220 • Low er R d s <o n > • • • • • • Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure


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    PDF 00121S7 IRF530/531/532/533 IRFP130/131 IRF530/IRFP130 IRF531 IRF532/IRFP1 IRF533/IRFP133 O-220 IRFP130/131/132/133 IRF530 IRF5303 IR IRF532 IRF530 mosfet IRFP130 OF IRF530 irf532 reliability irf530 IRFP131