Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b4E D • 7Tbm42 GD12174 71b «SflG K N-CHANNEL POWER MOSFETS IRF620/621/622/623 FEATURES • • • • • • • Lower R d s ON Improved Inductive ruggedness Fast switching times R ugged polysilicon gate cell structure Lower input capacitance
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7Tbm42
GD12174
IRF620/621/622/623
IRF620
IRF621
IRF622
IRF623
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PDF
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km41c1001
Abstract: No abstract text available
Text: SAMSUNG SEMICONDUCTOR INC S3E D • 7Tbm42 KM41C1001A CMOS DRAM T '4 -6 '5 1 3 - 1 M x 1 Bit Dynamic RAM with Nibble Mode FEATURES GENERAL DESCRIPTION • Performance range: tcAc tnc 70ns 20ns 130ns KM41C1001A- 8 80ns 20ns 150ns KM41C1001A-10 100ns 25ns 180ns
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OCR Scan
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7Tbm42
KM41C1001A
KM41C1001A
18-LEAD
7Tb414E
20-LEAD
20-PIN
km41c1001
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PDF
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R0310
Abstract: 64KX4 samsung CMOS SRAM 28-pin SOJ SRAM
Text: I SAMSUNG ELECTRONICS INC b?E D m 7Tbm42 KM 64258B 00175fc.b Ö2T SI1GK CM OS SRAM 6 4 K X 4 Bit High-Speed CMOS Static RAM With OE FEATURES GENERAL DESCRIPTION • Fast Access Tim e: 15, 20, 25ns (max.) • Low Power Dissipation Standby (TTL) : 40m A (m ax.)
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KM64258B
7Tbm42
D017Sfc
64KX4
KM642S8BP/J-15:
140mA
KM64258BP/J-20:
130mA
KM64258BP/J-25:
120mA
R0310
samsung CMOS SRAM
28-pin SOJ SRAM
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PDF
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ka7309
Abstract: TI 81W CAMERA 803 CMOS sync timing generator T3D 77 KS7214 78235 T3D 91 oil temperature sensor generator
Text: KS7214 Timing & SYNC. Generator for B/W CCD GENERAL DESCRIPTION KS7214 is Timing control IC for generating timing signal & sync signal which required camera system using monochrome CCD Image sensor. FUNCTIONS - EIA/CCIR STANDARDS TIMING MODE - HI-BAND/ NORMAL TIMING MODE
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OCR Scan
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KS7214
KS7214
48-QFP-0707
37T37
71b4142
48-QFP-0707
ka7309
TI 81W
CAMERA 803 CMOS
sync timing generator
T3D 77
78235
T3D 91
oil temperature sensor generator
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PDF
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250M
Abstract: IRFS820 IRFS821
Text: N-CHANNEL POWER MOSFETS IRFS820/821 FEATURES TQ-220F • Lower R d s <o n • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability
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OCR Scan
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IRFS820/821
IRFS820
IRFS821
to-220f
250M
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PDF
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Untitled
Abstract: No abstract text available
Text: KM641001A CMOS SRAM 256K x 4 Bit With ÜE High-Speed CMOS Static RAM GENERAL DESCRIPTION FEATURES The KM641001A is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words • Fast Access Time 15,17,20 ns(Max.) • Low Power Dissipation
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OCR Scan
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KM641001A
KM641001A
576-bit
KM641001A-15
KM641001A-17
KM641001A-20
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PDF
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC m 4SE D 7 % H 1 4 2 000=1011 b • " T V'?>1 - VS> MJD30/30C PHP EPITAXIAL SILICON TRANSÌSTOR GENERAL PURPOSE AMPLIFIER. LOW SPEED SWITCHING APPLICATIONS. D-PACK FOR SURFACE MOUNT APPLICATIONS • Lead Formed or Surface Mount Applications (No Suffix
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OCR Scan
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MJD30/30C
TIP30
TIP30C
MJD30
MJD30C
-200m
300/tS,
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PDF
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Untitled
Abstract: No abstract text available
Text: S A MS UN G E L E C T R O N I C S INC b?E ]> 7^142 CMOS VIDEO RAM KM428C128 1 2 8 K X 8 Bit CMOS Video RAM FEATURES • Dual port A rchitecture 128K X 8 bits RAM port 256 X 8 bits SAM port • Performance RAM access tim e tRAC • • • • • • •
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OCR Scan
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KM428C128
150ns
130ns
40-PIN
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PDF
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE KMM364E213BK/BS KMM364E213BK/BS Fast Page with EDO Mode 2Mx64 DRAM DIMM based on 2Mx8, 2K Refresh, 5V G ENERAL DESCRIPTION FEATURES The Samsung KMM364E213B is a 2M bit x 64 Dynamic RAM high density memory module. The • Part Identification Samsung KMM364E213B consists of eight CMOS
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OCR Scan
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KMM364E213BK/BS
KMM364E213BK/BS
2Mx64
KMM364E213B
KMM364E213BS
cycles/32ms
1000mil)
KMM364E213BK
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PDF
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SSH60N06
Abstract: No abstract text available
Text: SA M S UN G E L E C T R O N I C S INC b4E ]> 7^4142 SSH60N06/60N10 FEATURES • • • • • • • • GG 15 4b S 45b « S M Ò K N-CHANNEL POWER MOSFETS TO-3P Lower Rds on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure
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OCR Scan
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SSH60N06/60N10
O-220
SSH60N06
SSH60N1
SSH60N10
SSM60N06/60N10
SSH60N06
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PDF
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE KMM372F213BK/BS KMM372F213BK/BS Fast Page with EDO Mode 2Mx72 DRAM DIMM with ECC, 2K Refresh, 3.3V G E N E R A L DESCRIPTION FEA T U R ES The Samsung KMM372F213B is a 2M bit x 72 Dynamic RAM high density memory module. The Samsung KMM372F213B consists of nine CMOS
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OCR Scan
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KMM372F213BK/BS
KMM372F213BK/BS
2Mx72
KMM372F213B
300mil
KMM372F213BK
cycles/32ms
KMM372F213BS
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PDF
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ADC CCIR 601
Abstract: Solid state CCIR ca 151 KS0122-S aexo chroma 175 ic CCIR601 KS0119 KS0122 multi S-Video Input
Text: KS0122 Data Sheet MULTIMEDIA VIDEO MULTISTANDARD VIDEO DECODER The KS0122 converts analog NTSC or PAL video in composite or S-video format to digitized component video. Output data can be selected for CCIR 601 or square pixel sample rates in either YUV or RGB formats. All required
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OCR Scan
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KS0122
100-QFP-1420C
ADC CCIR 601
Solid state CCIR ca 151
KS0122-S
aexo
chroma 175 ic
CCIR601
KS0119
multi S-Video Input
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PDF
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U420
Abstract: ic 74148 74148 IC IRFR420 16-4 74148 IRFR422 irfr520 74148 free irfu420 of ic 74148
Text: SAM S UN G E L E C T R O N I C S INC b7E ]> • 7Tbm4B IRFR420/422 IRFU420/422 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • DD17Pbfi TST ■ SMGK D-PACK Lower R d s o n Improved inductive ruggedness Fast switching times Rugged poiysilicon gate cell structure
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OCR Scan
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0D172bfl
IRFR420/422
IRFU420/422
IRFR420/U420
IRFR422/U422
IRFR420/421
U420
ic 74148
74148 IC
IRFR420
16-4 74148
IRFR422
irfr520
74148 free
irfu420
of ic 74148
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PDF
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HMR-11000
Abstract: HMR11000
Text: SAMSUNG ELECTRONICS INC O HARRIS bOE D 7^4145 OGlliaO ^ 05 HMR-11000 GaAs MMIC Attenuator DC-18 GHz PRODUCT DATA Features Applications * Low VSWR • Gain Control * Ultra Low Power Consumption • Temperature Compensation * Voltage Controlled Impedence • SPST Switching
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OCR Scan
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HMR-11000
DC-18
HMR11000
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PDF
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b?E D • 7 ^ 4 1 4 2 DDlSSSfl 171 I KM41C4000B SUGK CMOS DRAM 4 M x 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C4000B is a high speed CMOS 4,194,304 x 1 Dynamic Random Access Memory. Its de
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OCR Scan
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KM41C4000B
KM41C4000B
110ns
KM41C4000B-7
130ns
KM41C4000B-8
150ns
KM41C4000B-6
SN54BCT8373A
i1bl723
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PDF
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Untitled
Abstract: No abstract text available
Text: KM64BV4002 CMOS SRAM 1Mx4Bit With /OE High-Speed BiCMOS Static RAM (3.3V Operating) FEATURES GENERAL DESCRIPTION • Fast Access Time 12,13,15 ns(Max) • Low Power Dissipation Standby (TTL) : 60mA(Max.) (CMOS): 30 mA(Max.) Operating KM64BV4002J-12:160mA(Max.)
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OCR Scan
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KM64BV4002
KM64BV4002J-12
160mA
KM64BV4002J-13
KM64BV4002J-15
KM64BV4002J
32-SOJ-400
KM64BV4002
304-bit
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PDF
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Untitled
Abstract: No abstract text available
Text: KSR2105 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In SOT-23 • Switching Circuit, Inverter, Interlace circuit Driver circuit • Built in bias Resistor (R,=4.7K1), R2=10Kfl) • Complement to KSR1105 ABSOLUTE MAXIMUM RATINGS (Ta=25°C )
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OCR Scan
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KSR2105
OT-23
10Kfl)
KSR1105
7Tbm42
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PDF
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b7E D • 7TL,4m2 DDlbSSb TT3 « S M C K KM424C257 CMOS VIDEO RAM 256K X 4 Bit CMOS Video RAM FEATURES GENERAL DESCRIPTION • Dual port Architecture 256K x 4 bits RAM port 512 x 4 bits SAM port * Perform ance The Samsung K M 4 2 4 C 2 5 7 is a CMOS 2 5 6 K X 4 bit Dual
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OCR Scan
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KM424C257
110ns
130ns
150ns
28-PIN
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PDF
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Untitled
Abstract: No abstract text available
Text: KM44C1003C/CL/CSL CMOS DRAM 1M x4B it CMOS Quad CAS RAM with Fast Page Mode GENERAL DESCRIPTION FEATURES • Performance range: tR A C tC A C tR C KM44C1003C/CIVCSL-5 50ns 13ns 90ns KM44Ú1003C/CL/CSL-6 60ns 15ns 110ns KM44C1003C/CL/CSL-7 70ns 20ns 130ns KM44C1003C/CL/CSL-8
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OCR Scan
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KM44C1003C/CL/CSL
KM44C1003C/CIVCSL-5
1003C/CL/CSL-6
110ns
KM44C1003C/CL/CSL-7
130ns
KM44C1003C/CL/CSL-8
150ns
cycle/16m
7TL4142
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PDF
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Untitled
Abstract: No abstract text available
Text: KM416C1000BJ CMOS DRAM ELECTRONICS 1Mx16Bit CMOS Dynamic RAM with Fast Page Mode D ESC R IPT IO N This is a family of 1,048,576 x16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh
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OCR Scan
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KM416C1000BJ
1Mx16Bit
1Mx16
71bm4E
16C1000BJ
40SOJ
1000B
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PDF
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Untitled
Abstract: No abstract text available
Text: KM44C4005BS CMOS DRAM ELECTRONICS 4M x 4 Bit CMOS Quad CAS DRAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 4bit Quad CAS with Extended Data Out Mode DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode.
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OCR Scan
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KM44C4005BS
16Mx4,
512Kx8)
71b414E
003455b
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PDF
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44C160
Abstract: No abstract text available
Text: KM44C16004A, KM44C16104A CMOS DRAM 1 6 M x 4 B i t CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a fam ily of 16,777,216 x 4 bit Extended Data Out M ode CM O S DRAMs. Extended Data O ut Mode offers high speed random access of m em ory cells w ithin the sam e row. Refresh cycle 4K Ref. o r 8K Ref. ,
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OCR Scan
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KM44C16004A,
KM44C16104A
16Mx4
44C160
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PDF
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KS57C5016
Abstract: No abstract text available
Text: K S57C 5016 4-BIT CMOS Microcontroller ELECTRONICS Product Specification OVERVIEW The KS57C5016 single-chip CMOS microcontroller is designed for high performance using Samsung's newest 4-bit CPU core and the SAM4 product development approach Samsung Arrangeable Microcontrollers . With its
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OCR Scan
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KS57C5016
64-pin
anb34
fx/64
002basa
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PDF
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Jzc 40F
Abstract: No abstract text available
Text: CMOS DIGITAL INTEGRATED CIRCUIT KS0066 DOT MATRIX LCD CONTROLLER & DRIVER The K S0066 is a dot matrix LCD driver & controller LSI which is fabricated by low power CMOS technology FUNCTION • Character type dot matrix LCD driver & controller • Internal driver: 16 common and 40 segment signal output.
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OCR Scan
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KS0066
S0066
32kinds
KSQ066F00,
Jzc 40F
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PDF
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