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    IRF9521

    Abstract: f9520 IRF9520 Samsung
    Text: SAMSUNG ELECTRONICS INC b4E D • 71134142 DP12S4Ô 5 0 5 « S I I G K P-CHANNEL POWER MOSFETS IRF9520/9521/9522/9523 FEATURES • • • • • • • Lower Rqs o n Improved inductive ruggedness Fast sw itching tim es Rugged poiysilicon gate cell structure


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    PDF DP12S4Ã IRF9520/9521/9522/9523 F9520 F9512 F9523 IRF9520 IRF9521 IRF9522 IRF9523 IRF9521 f9520 IRF9520 Samsung