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    Untitled

    Abstract: No abstract text available
    Text: KMM5328100V/VG/VP DRAM MODULES 8 M x 3 2 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: tR A C KMM5328100V-6 60ns 15ns 110ns KMM5328100V-7 70ns 20ns 130ns KMM5328100V-8 80ns 20ns 150ns The KMM5328100V is a S ingle in-line M em ory M odule


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    PDF KMM5328100V/VG/VP KMM5328100V 24-pin 72-pin KMM5328100V-6 KMM5328100V-7 KMM5328100V-8 110ns

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b?E D • 7 ^ 4 1 4 5 QQ152fit. 0^0 I SMGK KM M53281OOV/VG/VP DRAM MODULES 8 M x 3 2 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5328100V is a 8M bit x 32 Dynamic RAM high density memory module. The Samsung


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    PDF QQ152fit. M53281OOV/VG/VP KMM5328100V 24-pin 72-pin 22/xF KMM5328100V-6 110ns KMM532810QV-7

    KM424C256Z

    Abstract: KM41C464 PB20 KM64258 KM68512 KMM5362000 KM23C2 64k 30-pin SIMM KM23C4000A KM41C4000BJ
    Text: MEMORY ICs FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM Capacity 256K bit Part Number KM41C256P KM41C255J KM41C258Z KM41C257P KM41C257J KM41C257Z KM41C25BP KM41C258J KM41C258Z Features Packages Remark 256K X 1 256K X 1 256K X 1 256K X 1 70/80/100 70/80/100


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    PDF KM41C256P KM41C255J KM41C258Z KM41C257P KM41C257J KM41C257Z KM41C25BP KM41C258J KM41C464P KM424C256Z KM41C464 PB20 KM64258 KM68512 KMM5362000 KM23C2 64k 30-pin SIMM KM23C4000A KM41C4000BJ

    KMM591000AN

    Abstract: KM41C464P KM424C256Z KMM591000B KM41C464 KMM584000B 4Mx1 nibble
    Text: MEMORY ICS FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM Capacity 256K bit Part Number KM41C256P 256K X 1 KM41C256J 256K X 1 KM41C256Z KM41C257P 256K X 1 256Kx 1 70/80/100 KM41C257J 256K X 1 256K X 1 Packages Remark CMOS Fast Page 16 Pin DIP Fast Page 18 Pin PLCC


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    PDF KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J KM41C257Z KM41C258P KM41C258J KM41C258Z KM41C464P KMM591000AN KM424C256Z KMM591000B KM41C464 KMM584000B 4Mx1 nibble