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    TRANSISTOR PNP 200V 20A Search Results

    TRANSISTOR PNP 200V 20A Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR PNP 200V 20A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Diode 400V 5A

    Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
    Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM


    Original     		PDF 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 Diode 400V 5A lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN

    BZX85C12V

    Abstract: TOSHIBA 2N3055 bta41-600b application BTA41-600B firing circuit TAB 429 H toshiba BZX85C20V SCR tyn612 pin configuration picaxe TYN612 specification 2SA1085E
    Text: SEMICONDUCTORS DISCRETE DEVICES Cathode Anode DO-15 DO-201AD 6.8 x 3.5mm 9.5 x 5.3mm Anode Cathode TO-220AC Fast recovery diodes page 427 Schottky power diodes page 428 Isolated tab triacs page 430 Anode 1 Gate Anode 2 Bridge rectifiers Current regulating diodes


    Original     		PDF DO-15 DO-201AD O-220AC T0202-3 STGP3NB60HD* STGP7NB60HD* STGP3NB60HD STGP7NB60HD BZX85C12V TOSHIBA 2N3055 bta41-600b application BTA41-600B firing circuit TAB 429 H toshiba BZX85C20V SCR tyn612 pin configuration picaxe TYN612 specification 2SA1085E

    SM3159

    Abstract: SM3160 ic pt 2223 POWER TRANSISTORS 10A 400v pnp Magnatec 200w silicon audio power transistor NPN Transistor 1.5A 400V npn transistors 400V
    Text: SM3159 MAGNA TEC COMPLEMENTARY SILICON POWER TRANSISTORS MECHANICAL DATA Dimensions in mm 40.01 1.575 Max. 26.67 (1.050) Max. 4.47 (0.176) Rad. 2 Pls. 22.23 (0.875) Max. 11.43 (0.450) 6.35 (0.250) 1.09 (0.043) 0.97 (0.038) Dia. 1.63 (0.064) 1.52 (0.060)


    Original     		PDF SM3159 SM3159 SM3160 SM3160 ic pt 2223 POWER TRANSISTORS 10A 400v pnp Magnatec 200w silicon audio power transistor NPN Transistor 1.5A 400V npn transistors 400V

    DALE PT 30-2 PULSE TRANSFORMER

    Abstract: d28 sot23 PA0801 2501 optocoupler 330pF 200V 68uF 10V SANYO TRANSISTOR SOT23 16TQC68M 2N7002-SOT23 AC Transformer 50A 100V
    Text: QUICK START GUIDE FOR DEMONSTRATION CIRCUIT 1032A 36V-72VIN, ISOLATED SYNCHRONOUS FORWARD LTC3725/LTC3726 DESCRIPTION Demonstration circuit 1032A is a high power isolated synchronous forward converter featuring the LTC3725 and LTC3726 When powered from a 3672V input, a single DC1032A provides an isolated


    Original     		PDF 6V-72VIN, LTC3725/LTC3726 LTC3725 LTC3726 DC1032A 300kHz DC1031A-A/B/C DC888A-A/B/C DALE PT 30-2 PULSE TRANSFORMER d28 sot23 PA0801 2501 optocoupler 330pF 200V 68uF 10V SANYO TRANSISTOR SOT23 16TQC68M 2N7002-SOT23 AC Transformer 50A 100V

    transistor SMD p12

    Abstract: SMD 1K tapped inductor boost converter 15V zener diode small package 2 pins smd NCP1252 CRCW12060000Z0EA P10 Draloric NCP1252B smd transistor 637 EKXJ
    Text: TN1252 NCP1252 Boost and CAT4026 LED Driver Board 2010-October-04 TECHNICAL NOTE Disclaimer: ON Semiconductor is providing this reference design documentation package “AS IS” and the recipient assumes all risk associated with the use and/or commercialization of this design package. No licenses to ON Semiconductor’s or any third party’s Intellectual Property is conveyed by the transfer of this


    Original     		PDF TN1252 NCP1252 CAT4026 2010-October-04 TN4026/D transistor SMD p12 SMD 1K tapped inductor boost converter 15V zener diode small package 2 pins smd CRCW12060000Z0EA P10 Draloric NCP1252B smd transistor 637 EKXJ

    1500w audio amplifier circuit

    Abstract: Schottky Diode 80V 6A 1500w PWM 220v C106MG marking code SS SOT23 tl494cn inverter datasheet smps 1500W MMSZ5231BT1G dc 220v motor speed control circuit with scr NCP1200P60G
    Text: SGD501/D REV 19, October 9, 2004 NORTH AMERICA SALES AND DISTRIBUTION ON Semiconductor PRICE BOOK THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION − Please see General Information Section EFFECTIVE DATE: OCTOBER 9, 2004  General Information ON Semiconductor Standard Policies


    Original     		PDF SGD501/D 74VCX16373DT 74VCX16373DTR 74VCX16374DT 16BIT 74VCX16374DTR 80SQ045N 80SQ045NRL 1500w audio amplifier circuit Schottky Diode 80V 6A 1500w PWM 220v C106MG marking code SS SOT23 tl494cn inverter datasheet smps 1500W MMSZ5231BT1G dc 220v motor speed control circuit with scr NCP1200P60G

    350V transistor npn 15a

    Abstract: 300V transistor npn 2a 2N6678
    Text: 2N6678 MECHANICAL DATA Dimensions in mm inches HIGH VOLTAGE NPN POWER TRANSISTOR 4 0 .0 1 (1 .5 7 5 ) M a x . 2 6 .6 7 (1 .0 5 0 ) M a x . 4 .4 7 (0 .1 7 6 ) R a d . 2 P ls . 2 2 .2 3 (0 .8 7 5 ) M a x . FEATURES 1 1 .4 3 (0 .4 5 0 ) 6 .3 5 (0 .2 5 0 ) 1 2 .1 9 (0 .4 8 )


    Original     		PDF 2N6678 350V transistor npn 15a 300V transistor npn 2a 2N6678

    panasonic inverter manual vf 200

    Abstract: panasonic inverter manual vf 100 MBDHT2510 MANUAL npn transistor w26 CY-122A-P-Z
    Text: 02/04/2013 Overview Panasonic automation products Panasonic offers a broad spectrum of products for all automation tasks, sensors, PLCs, HMIs, Servo Drives and FA Components. Along with our service philosophy to advise and take care of our customers, products


    Original     		PDF RM1205-9, panasonic inverter manual vf 200 panasonic inverter manual vf 100 MBDHT2510 MANUAL npn transistor w26 CY-122A-P-Z

    102k 50v capacitor

    Abstract: dr127-100 3.3uH inductor 1210 SIZE murata CAPACITOR X7R 0.1uF Capacitor Ceramic capacitor ceramic 47pF TL431AID ECJ-2YB2D103K GRM39X7R222K050A SANYO POSCAP D3
    Text: Qty RefDes Part Number Value Description 5 C10, C23, C25, C29, C30 GRM39X7R103K025A 0.01uF Capacitor, Ceramic, 0.01uF, 25V, X7R, 10% muRata 2 C9, C32 GRM39X7R223K025A 1 2 1 2 1 2 2 1 C46 C27, C35 C12, C15, C24, C43 C13 C19 C14, C36 C16 C42, C44 C39, C45 C18


    Original     		PDF GRM39X7R103K025A GRM39X7R223K025A GRM39X7R473K025A GRM39X7R104K016A 022uF 022uF, 047uF 047uF, 102k 50v capacitor dr127-100 3.3uH inductor 1210 SIZE murata CAPACITOR X7R 0.1uF Capacitor Ceramic capacitor ceramic 47pF TL431AID ECJ-2YB2D103K GRM39X7R222K050A SANYO POSCAP D3

    IRF9210

    Abstract: darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1
    Text: PRODUCT INDEX FUNCTIONAL SELECTION GUIDE BIPOLAR TRANSISTOR DESCRIPTION MRTNO. 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 KSP13 KSP2222A KSP27 KSP2907A KSP42 KSP44 KSP56 KSP92 KST10-TF KST2222A-TF KST2484-TF KST2907-TF KST3904-TF KST3906-TF


    OCR Scan     		PDF 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 IRF9210 darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1

    IFRZ44

    Abstract: IRFZ43 KA3842D irf510 switch TRANSISTOR MC7805CT KA336Z Transistor mc7812ct high voltage pnp transistor 700v IRFZ44 PNP KS82C670N
    Text: PRODUCT INDEX ALPHA NUMERIC INDEX Part numbers In BOLD are preferred standard parts. PART NO. 2N3904 2N3906 2N4400 2N4401 2N4402 2N4403 2N5087 2NS088 2NS551 2N6S15 IRF510 IRF511 IRF512 IRF513 IRF520 IRF521 IRF522 IRF523 IRFS30 IRF531 IRF532 IRF533 IRF540 IRF541


    OCR Scan     		PDF 2N3904 2N3906 2N4400 2N4401 2N4402 2N4403 2N5087 2NS088 2NS551 2N6S15 IFRZ44 IRFZ43 KA3842D irf510 switch TRANSISTOR MC7805CT KA336Z Transistor mc7812ct high voltage pnp transistor 700v IRFZ44 PNP KS82C670N

    Transistor 200V 20A

    Abstract: 200V transistor npn 20a SDT6338 NPN Transistor VCEO 80V 100V POWER TRANSISTOR PNP 20a 80v TO-3 200V transistor pnp 20a
    Text: ^/outran [fk ®!!! ? ©ättm ^n Devices. Inc MEDIUM TO HIGH VOLTAGE, FAST SWITCHING CHIP NUM BER NPN EPITAXIAL PLANAR POWER TRANSISTOR* CONTACT METALLIZATION A Base and emitter: > 50,000 Aluminum Collector: Gold Polished silicon or "Chrome Nickel Silver” also available)


    OCR Scan     		PDF 305mm) Transistor 200V 20A 200V transistor npn 20a SDT6338 NPN Transistor VCEO 80V 100V POWER TRANSISTOR PNP 20a 80v TO-3 200V transistor pnp 20a

    soc 117a

    Abstract: 2N6277 equivalent 2N6215 2N6277 2N6279 SDT79823 POWER TRANSISTOR PNP 20a 80v TO-3
    Text: Contran [^ ©tUKSTT © Ä¥ÄIL MEDIUM TO HIGH VOLTAGE, FAST SWITCHING CHIP NUMBER IMPIM EPITAXIAL PLANAR POWER TRANSISTOR* (FORMERLY 79 ¿1 CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver" also available)


    OCR Scan     		PDF 305mm) soc 117a 2N6277 equivalent 2N6215 2N6277 2N6279 SDT79823 POWER TRANSISTOR PNP 20a 80v TO-3

    transistor c 2060

    Abstract: 2N6277 SOLITRON 179
    Text: SOLITRON DEVICES INC 3 DE I B3bñbD2 PDQ5S73 4 fit. «/ ELEMENT NUMBER 179 MEDIUM TO HIGH VOLTAGE, FAST SWITCHING NPN EPITAXIAL PLANAR POWER TRANSISTOR * CONTACT M ETALLIZATIO N Base and emitter: > F O R M E R LY 79 5 0 . 0 0 0 Â Aluminum Collector: polished Silicon


    OCR Scan     		PDF PDQ5S73 700pF 700pF 2N6279, transistor c 2060 2N6277 SOLITRON 179

    2N6277 equivalent

    Abstract: Transistor PnP 200V 20A Solitron Devices SOLITRON 179 2N6279
    Text: SOLITRO N DEVICES INC TS DEyfl3bflb0a OOOSfiS^ Q f ° [FIEiODOJ ? ©ATM. ® Devices. Inc. M EDIUM TO HIGH VOLTAGE, FAST SWITCHING CHIP N U M BER N PN EPITAXIAL PLANAR POWER TRANSISTOR* FORMERLY 79) CONTACT METALLIZATION B ase and emitter: > 50,000 A Aluminum


    OCR Scan     		PDF 305mm) a2N6279, SDT79823, 2N6215 2N6277 equivalent Transistor PnP 200V 20A Solitron Devices SOLITRON 179 2N6279

    Transistor 200V 20A

    Abstract: SDT6338
    Text: [ ^ E iiy x g ir g Ä T Ä ii © MEDIUM TO HIGH VOLTAGE, FAST SWITCHING CH IP NUM BER .J f o lit r o NPN EPITAXIAL PLANAR POWER TRANSISTOR * * CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver" also available


    OCR Scan     		PDF 305mm) SDT6338 Transistor 200V 20A

    20 amp MOSFET transistor

    Abstract: N and P MOSFET
    Text: OM8OOISC OM8003SC OM8002SC OM8004SC POWER MOSFET WITH GATE DRIVE CIRCUIT IN 6-PIN HERMETIC PACKAGE omnirel corp 43E D • bTô^QTB QGQQSTb 7 MOMNI 100V Thru 500V, Up To 35 Amp, N-Channel MOSFET With Low Power Gate Drive Circuitry FEATURES • Isolated Hermetic Package


    OCR Scan     		PDF OM803 OM8001 OM8002 OM8003 OM8004 OM8004 20 amp MOSFET transistor N and P MOSFET

    SDT899

    Abstract: No abstract text available
    Text: 83 686 02 SOL ITRON DE VI CE S INC 9 1 D 02701 Bolitron Devices, Inc. TI D Ì È )fl3bflbD a NO.: S P E C I F I C A T I O N S Tm 3 □□□E7Q1 T SDT89902 TYPE: PNP SILICON PWR. TRANS. CASE: TO-114 M AXIM UM RATINGS Voltage, Collector to Base VCB0) .


    OCR Scan     		PDF SDT89902 O-114 300ysec? SDT899

    100 amp npn mosfet

    Abstract: 100 amp mosfet 400v 20 amp mosfet 500V 25A Mosfet pnp 500v OM8001SC OM8002SC OM8003SC OM8004SC OM803
    Text: T M3E D bTÛ'JÜTB OOQQSTb 7 IOMNI OM 8OOISC OM8003SC OM8002SC OM8004SC POWER MOSFET WITH GATE DRIVE CIRCUIT IN 6-PIN HERMETIC PACKAGE OMNIREL CÔRP 100V Thru 500V, Up To 35 Amp, N-Channel MOSFET With Low Power Gate Drive Circuitry FEATURES • Isolated Hermetic Package


    OCR Scan     		PDF OM8003SC OM8002SC OM8004SC OM803 the003 QM8004 100 amp npn mosfet 100 amp mosfet 400v 20 amp mosfet 500V 25A Mosfet pnp 500v OM8001SC OM8004SC OM803

    Untitled

    Abstract: No abstract text available
    Text: »36860 2 SOL ITRON D EV ICE S INC 9 1 D 02698 S0LITR0N DEVICES INC ~TL i D T - 3 3 - 2 DE|fl3bfltDE QODEbTfl 2 Bolitron Devices, Inc. NO.: S P E C I F I C A T I O N S SD T 89702 TYPE: PNP S IL IC O N PWR. TRANS MAXIMUM RATINGS CASE: TO" 2 2 8 / AC Voltage, Collector to Base V CB0


    OCR Scan     		PDF 300ysec;

    2NXXXX

    Abstract: NPN Transistor 10A 400V to3 transistor 2N 3440 TO-59 Package c 3420 transistor 2n3741 MIL transistor 2n 523 POWER TRANSISTORS 10A 400v pnp power transistors table TO111 package
    Text: 62S4Ò22 S I L I üuin TRANSISTOR CORP u j . l 4. \ . v i i I n n m ü j. _88DQ0787 STOR CORP flfl D .T -A B -ß DE |fl2S40aa 000 Q7Ö7 S T • 2 .3 -1 / f NUMERICAL INDEX TO JAN QUALIFIED POWER TRANSISTORS 2NTYPE* JAN JAN TX JANTXV MIL-S19500 PAGETABLE 2N389


    OCR Scan     		PDF 88DQ0787 fl2S40aa 2N389 2N424 2N1016B 2N1016C 2N1016D 2N1480 2N1481 2N1484 2NXXXX NPN Transistor 10A 400V to3 transistor 2N 3440 TO-59 Package c 3420 transistor 2n3741 MIL transistor 2n 523 POWER TRANSISTORS 10A 400v pnp power transistors table TO111 package

    Untitled

    Abstract: No abstract text available
    Text: S O L ITRON D E VI CES 8368602 91D 02695 INC "il SOLITRON DEVICES INC QOlitron D D e | ÖBbßbüS DOOEblS 7 Devices, Inc. NO.: S P E C I F I C A T I O N S SDT89502 T Y P E : PNP SILICON PWR. TRANS, C A S E : TO- 68 M A X IM U M R A T IN G S Voltage, Collector to Base V C B 0


    OCR Scan     		PDF SDT89502 300ysec;

    2N3597

    Abstract: 2N3599 2N5539 BDY58 SDT8301 SDT8304 SDT8758 74c74 TRANSISTOR TO63
    Text: -Ælttron A T T Ä L ( MEDIUM VOLTAGE, FAST SWITCHING Devices. Inc. NPN EPITAXIAL/TRIPLE DIFFUSED PLANAR POWER TRANSISTOR* (FORMERLY 86 CHIP N UM BER CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver" also available)


    OCR Scan     		PDF 305mm) 2N3597 2N3599 2N5539 BDY58 SDT8301 SDT8304 SDT8758 74c74 TRANSISTOR TO63

    74c74

    Abstract: No abstract text available
    Text: -JSntnm [p[M>}[p yj Tr ©ÄTTÄIL ( MEDIUM VOLTAGE, FAST SWITCHING Devices. Inc NPN EPITAXIAL/TRIPLE DIFFUSED PLANAR POWER TRANSISTOR* * (FORMERLY 86) CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum Collector: Gold (Polished silicon or “Chrome Nickel Silver" also available)


    OCR Scan     		PDF 305mm) 74c74