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    IRF511 Search Results

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    IRF511 Price and Stock

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics IRF511 50
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
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    Quest Components IRF511 40
    • 1 $2.044
    • 10 $1.533
    • 100 $1.2775
    • 1000 $1.2775
    • 10000 $1.2775
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    Motorola Mobility LLC IRF511

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics IRF511 36 2
    • 1 -
    • 10 $2.25
    • 100 $1.875
    • 1000 $1.875
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    Motorola Semiconductor Products IRF511

    POWER FIELD-EFFECT TRANSISTOR, 4A I(D), 60V, 0.6OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components IRF511 28
    • 1 $4
    • 10 $2.5
    • 100 $2.5
    • 1000 $2.5
    • 10000 $2.5
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    RCA IRF511

    POWER FIELD-EFFECT TRANSISTOR, 4A I(D), 60V, 0.6OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components IRF511 7
    • 1 $4.8
    • 10 $3.52
    • 100 $3.52
    • 1000 $3.52
    • 10000 $3.52
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    Harris Semiconductor IRF511

    POWER FIELD-EFFECT TRANSISTOR, 4A I(D), 60V, 0.6OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components IRF511 4
    • 1 $3.96
    • 10 $2.64
    • 100 $2.64
    • 1000 $2.64
    • 10000 $2.64
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    IRF511 Datasheets (23)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRF511 Harris Semiconductor N-channel power MOSFET, 80V, 5.6A Original PDF
    IRF511 Fairchild Semiconductor N-Channel Power MOSFETs, 5.5 A, 60-100V Scan PDF
    IRF511 FCI POWER MOSFETs Scan PDF
    IRF511 Frederick Components Power MOSFET Selection Guide Scan PDF
    IRF511 General Electric Power Transistor Data Book 1985 Scan PDF
    IRF511 General Electric N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 4.0A. Scan PDF
    IRF511 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRF511 International Rectifier N-Channel Power MOSFETs Scan PDF
    IRF511 International Rectifier TO-220 N-Channel HEXFET Power MOSFET Scan PDF
    IRF511 Motorola European Master Selection Guide 1986 Scan PDF
    IRF511 Motorola Switchmode Datasheet Scan PDF
    IRF511 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    IRF511 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    IRF511 Unknown FET Data Book Scan PDF
    IRF511 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    IRF511 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRF511 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRF511 National Semiconductor N-Channel Power MOSFETs Scan PDF
    IRF511 Supertex N-Channel Enhancement-Mode Vertical DMOS Power FETs Scan PDF
    IRF511 Vishay Siliconix Shortform Siliconix Datasheet Short Form PDF

    IRF511 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF511R Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)80 V(BR)GSS (V)20 I(D) Max. (A)5.6# I(DM) Max. (A) Pulsed I(D)4.0# @Temp (øC)100 IDM Max (@25øC Amb)20# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)43 Minimum Operating Temp (øC)-55õ


    Original
    IRF511R PDF

    IRF510

    Abstract: IRF510 MOSFET transistor equivalent irf510 irf510 pdf switch irf510 datasheet IRF511 transistor irf510 IRF512 IRF510-2 TA17441
    Text: IRF510, IRF511, IRF512, IRF513 Semiconductor 4.9A, and 5.6A, 80V and 100V, 0.54 and 0.74 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 4.9A, and 5.6A, 80V and 100V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    Original
    IRF510, IRF511, IRF512, IRF513 IRF510 IRF510 MOSFET transistor equivalent irf510 irf510 pdf switch irf510 datasheet IRF511 transistor irf510 IRF512 IRF510-2 TA17441 PDF

    IRF510

    Abstract: IRF511 IRF512 power mosfet irf511 irf510 power IRF513 TA17441 TB334 IRF510 MOSFET IRF510-2
    Text: IRF510, IRF511, IRF512, IRF513 S E M I C O N D U C T O R 4.9A, and 5.6A, 80V and 100V, 0.54 and 0.74 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 4.9A, and 5.6A, 80V and 100V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    Original
    IRF510, IRF511, IRF512, IRF513 IRF510 IRF511 IRF512 power mosfet irf511 irf510 power IRF513 TA17441 TB334 IRF510 MOSFET IRF510-2 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF511 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)80 V(BR)GSS (V)20 I(D) Max. (A)5.6# I(DM) Max. (A) Pulsed I(D)4.0 @Temp (øC)100 IDM Max (@25øC Amb)20# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)43 Minimum Operating Temp (øC)-55õ


    Original
    IRF511 PDF

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


    Original
    2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B PDF

    irf510

    Abstract: IRF511 irf512 jrf512 TA17441
    Text: if* ? S IRF510, IRF511, IRF512, IRF513 S e m ico n d ucto r y 7 4.9A, and 5.6A, 80V and 100V, 0.54 and 0.74 Ohm, N-Channel Power MOSFETs January 1998 Description Features 4.9A, and 5.6A, 80V and 100V High Input Impedance These are N-Channel enhancement mode silicon gate


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    IRF510, IRF511, IRF512, IRF513 RF510, RF512, RF513 irf510 IRF511 irf512 jrf512 TA17441 PDF

    irf510

    Abstract: transistor irf510 irf510 Motorola IRF511 IRF 511 Transistor motorola 513
    Text: MOTOROLA SC X S T R S /R F I b3b?2S4 1ME D MOTOROLA QüäTböl 7 I IRF510 IRF511 IRF512 IRF513 •i SEMICONDUCTOR TECHNICAL DATA Part Number V DS N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR IRF510 100 V rDS on 0.6 n IRF511 60 V


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    IRF510 IRF511 IRF512 IRF513 transistor irf510 irf510 Motorola IRF 511 Transistor motorola 513 PDF

    1rf510

    Abstract: 1rf510 n-channel irf511 irf510 IRF512 IRF513 1RF511 20W Solenoid Driver transistor irf510 IRF510 complementary
    Text: SUPERTEX □1 INC D E l f l 7 7 3 2 c]S □□□15ÛG t, IRF510 IRF511 IRF512 IRF513 T"~ i f * d 7 N-Channel Enhancement-Mode Vertical DMOS Power FETs Ordering Information W n min) Order Number / Package (max) 100V 60V 0.6Q 0.6Q 4.0A 4.0A IRF510 IRF511


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    IRF510 IRF511 IRF512 IRF513 O-220 IRF510 IRF511 IRF512 1rf510 1rf510 n-channel IRF513 1RF511 20W Solenoid Driver transistor irf510 IRF510 complementary PDF

    MOSFET IRF 570

    Abstract: IRF 511 MOSfet irf510 Motorola transistor irf510 IRF510-513 power mosfet irf511 IRF*125 IRF511 MOSFET Transistor motorola 513 511 MOSFET TRANSISTOR motorola
    Text: MOTOROLA IRF510 IRF511 IRF512 IRF513 SEMICONDUCTOR TECHNICAL DATA Part Num ber v Ds N-CHANNEL ENHANCEMENT-MO DE SILICON GATE T M O S POWER FIELD EFFECT TRANSISTOR IRF510 100 V 0.6 n IRF511 60 V 0.6 0 4.0 A These TM OS Power FETs are designed for low voltage, high


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    IRF510 IRF511 IRF512 IRF513 MOSFET IRF 570 IRF 511 MOSfet irf510 Motorola transistor irf510 IRF510-513 power mosfet irf511 IRF*125 IRF511 MOSFET Transistor motorola 513 511 MOSFET TRANSISTOR motorola PDF

    IRF510

    Abstract: IRF510 MOSFET Irf510 mosfet circuit diagram MOSFET IRF510 IRF511 IRF511 MOSFET IRF512 RELAY HGS RF510 IRF513
    Text: Standard Power MOSFETs- IRF510, IRF511, IRF512, IRF513 File Number 1573 Power MOS Field-Effect Transistors N -C H A N N EL E N H AN C E M E N T MODE N-Channel Enhancement-Mode Power Field-Effect Transistors 3.5A and 4.0A, 60V-100V


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    IRF510, IRF511, IRF512, IRF513 0V-100V IRF512 IFIF513 RF510 IRF510 IRF510 MOSFET Irf510 mosfet circuit diagram MOSFET IRF510 IRF511 IRF511 MOSFET RELAY HGS RF510 IRF513 PDF

    IRF510 application note

    Abstract: irf511 VQE22 Gate Drive circuit for irf510 VQE 22 N0540 AN975 IRF510
    Text: HE 0 | MÛS54S2 0 0 0 0 4 3 4 3 | Data Sheet No. PD-9.325J 7 INTERNATIONAL R E C T I F I E R * 7 INTERNATIONAL RECTIFIER 7 - / / I«R REPETITIVE AVALANCHE AND dv/dt RATED* LOWER ON STATE RESISTANCE, 175°C OPERATING TEMPERATURE IRF510 IRF511 IRF5ÌS IRF513


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    S54S2 IRF510 IRF511 IRF513 O-220AB C-189 IRF510, IRF511, IRF512, IRF513 IRF510 application note VQE22 Gate Drive circuit for irf510 VQE 22 N0540 AN975 PDF

    SSP60N06

    Abstract: irf630 irf640 SSP50N06 ssp15n06
    Text: MOSFETs FUNCTION GUIDE TO-220 N-CHANNEL Part Number IRFZ10 BVdss^V lD on)(A) 50 10.00 15.00 16.00 30.00 IRFZ20 SSP15N05 IRFZ30 IRFZ40 SSP50N05 SSP60N05 IRFZ14 IRFZ24 60 SSP15N06 IRFZ34 IRFZ44 SSP50N06 SSP60N06 IRF511 80 IRF521 IRF531 IRF541 IRF510 IRF520


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    O-220 IRFZ10 IRFZ20 SSP15N05 IRFZ30 IRFZ40 SSP50N05 SSP60N05 IRFZ14 IRFZ24 SSP60N06 irf630 irf640 SSP50N06 ssp15n06 PDF

    IRF510

    Abstract: IRF511 irf513 irf512 IRF-510
    Text: □1 SUPERTEX INC D E £ 07732^5 □□□15ÛG t, IRF510 IRF511 IRF512 IRF513 T"~ i f * d 7 N-Channel Enhancement-Mode Vertical DMOS Power FETs Ordering Inform ation b v dss/ ^DS ON (max) W n) (min) Order Number / Package ^D G S 100V 60V 0.6Q 0.6Q 4.0A


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    IRF510 IRF511 IRF512 IRF513 O-220 IRF510 IRF512 IRF510. irf513 IRF-510 PDF

    IRF510R

    Abstract: dioda dioda rectifier l00a 250M IRF511R IRF512R IRF513R
    Text: _ Rugged Pow er M O SFETs File Num ber IRF510R, IRF511R, IRF512R, IRF513R 1995 Avalanche Energy Rated N-Channel Power MOSFETs 3.5A and 4.0A, 60V-100V ros on = 0.6 0 and 0.80 N-CHIANNEL ENHANCEMENT MODE Features: • ■ ■ ■ ■ Single pulse avalanche energy rated


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    IRF510R, IRF511R, IRF512R, IRF513R 0V-100V IRF512R IRF513R 92CS-42660 IRF510R dioda dioda rectifier l00a 250M IRF511R PDF

    IFRZ44

    Abstract: IRFZ43 KA3842D irf510 switch TRANSISTOR MC7805CT KA336Z Transistor mc7812ct high voltage pnp transistor 700v IRFZ44 PNP KS82C670N
    Text: PRODUCT INDEX ALPHA NUMERIC INDEX Part numbers In BOLD are preferred standard parts. PART NO. 2N3904 2N3906 2N4400 2N4401 2N4402 2N4403 2N5087 2NS088 2NS551 2N6S15 IRF510 IRF511 IRF512 IRF513 IRF520 IRF521 IRF522 IRF523 IRFS30 IRF531 IRF532 IRF533 IRF540 IRF541


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    2N3904 2N3906 2N4400 2N4401 2N4402 2N4403 2N5087 2NS088 2NS551 2N6S15 IFRZ44 IRFZ43 KA3842D irf510 switch TRANSISTOR MC7805CT KA336Z Transistor mc7812ct high voltage pnp transistor 700v IRFZ44 PNP KS82C670N PDF

    Transistor c 4138

    Abstract: TIP36 Application Note RFK25 IRF540 p channel
    Text: IN T E G R A T E D C IR C U IT S y UNITRODE High Efficiency Regulator Controller FEATURES • Complete Control fo r a High Current, Low Dropout, Linear Regulator • Fixed 5V or Adjustable O utput Voltage • Accurate 2.5A C urrent L im itin g w ith Foldback


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    UC1835 UC1836 UC2835 UC2836 UC3835 UC3836 TIP30 D41D4 TIP32 D45C2 Transistor c 4138 TIP36 Application Note RFK25 IRF540 p channel PDF

    IRF510

    Abstract: Gate Drive circuit for irf510 irf510 power IRF5105 7937 4N10 DD57 IRF510-513 IRF511 IRF512
    Text: 3469674 FAIRCHILD SEMICONDUCTOR f l 14 D e I 3 4 ^ 7 4 DGETTBM fl I IRF510-513 MTP4N08/4N10 T 3 9 // N-Channel Power MOSFETs, 5.5 A, 60-100 V FA IR C H ILD A Schlumberger Company Power And Discrete Division Description TO-220AB These devices are n-channel, enhancement mode, power


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    IRF510-513 MTP4N08/4N10 O-220AB IRF510 IRF511 IRF512 IRF513 MTP4N08 MTP4N10 IRF510-513 IRF510 Gate Drive circuit for irf510 irf510 power IRF5105 7937 4N10 DD57 IRF511 IRF512 PDF

    1RF540

    Abstract: 1RF620 1RF640 IRF614 IRF540 RF543 1RF530 IRF530 LM3661TL-1.25 IRF533
    Text: - £> tt £ f m * V Vd s € £ eg. tS Ta=25*0 Vg s Id Pd V g s th) loss Igss or * Vdg Hr (V) (V) * /CH * /CH (A) m (nA) Vg s (V) ( m A) Vd s (V) min max (V) (V) Ciss g fs Coss ft & 11 m Vg s =0 (max) *typ V g s (V) (Q) *typ (A) Id (A) Vg s (V) *typ (S)


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    1RF522 O-220AB RF523 IRF530 IRF630 IRF631 T0-220AB 1RF540 1RF620 1RF640 IRF614 IRF540 RF543 1RF530 LM3661TL-1.25 IRF533 PDF

    IRF449

    Abstract: irf362 irf413 IRF352 IRF353 IRF360 IRF421 IRF430 IRF433 IRF441
    Text: - 25 2 - Mi m *± « % Vds Vg s or * Vd g % 1RF35! IRF353 IR !R IR IRF360 IRF362 IRF420 IRF421 IRF422 IRF423 IRF430 IRF431 IRF432 IRF433 IRF440 IRF441 IRF442 IRF443 IRF448 IRF449 IRF450 IRF451 IRF452 IRF453 IRF460 IRF462 IRF510 IR IR IR IR IR IR IR IR IR IR


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    Ta-25 IRF352 IRF353 IRF360 O-204AE IRF362 TQ-204AE IRF421 O-3150 O-204AA IRF449 irf362 irf413 IRF352 IRF353 IRF360 IRF421 IRF430 IRF433 IRF441 PDF

    1RF530

    Abstract: 1RF540 1rf520 RF543 IRF530 IRF532 IRF533 IRF541 IRF542 IRF543
    Text: - f * m V Vd s £> tt £ £ Vg s eg. tS Ta=25*0 Id Pd V g s th) loss I gss or € * Vdg Hr (V) (V) * /CH * /CH (A) m (nA) Vg s (V) ( m A) Vd s (V) min max (V) (V) Ciss g fs Coss ft & 11 m Vg s =0 (max) *typ V g s ( Q ) (V) *typ (A) Id (A) Vg s (V) *typ (S)


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    1RF522 O-220AB RF523 IRF530 IRF630 IRF631 T0-220AB 1RF530 1RF540 1rf520 RF543 IRF532 IRF533 IRF541 IRF542 IRF543 PDF

    MTP8N10

    Abstract: mtp7n06 mtp12n10 MTP7N15 power mosfets to 204aa MTP5N15 mtp25n10 MTP12P08 MTP3N15 MTH8P20
    Text: POWER TRANSISTORS — TMOS continued V b R(DSS) (Volt*) Min (Ohms) Max (Amp) 500 6 3 DS(on) @ >D Device 450 M TM 2P50 >D(Contl (Amp) Max PD @ TC = 25-C (Watts) Max Package 2 75 2 04AA M TP2P50 220AB M TM 2P45 204AA 220A8 M T P 2P45 200 0.7 4 M TM 8P20 1


    OCR Scan
    O-218 O-22QAB MTM2P50 204AA MTP2P50 220AB MTM2P45 MTP2P45 MTP8N10 mtp7n06 mtp12n10 MTP7N15 power mosfets to 204aa MTP5N15 mtp25n10 MTP12P08 MTP3N15 MTH8P20 PDF

    irf411

    Abstract: IRF413 IRF449 IRF448 irf362 IRF352 IRF353 IRF360 IRF421 IRF430
    Text: - 252 - Mi X m % *± « * % Vd s or Vdg V £ Vg s Pd Id * /CH (V) 11 fé (Ta= 25 tJ) (A) Vg s th) I d ss I g ss * /CH <W) min (nA) Vg s (V) (u A ) Vd s (V) (V) Id («A ) fó f Ds(on) Vrs= Vg s max (V) % te (Ta=25cO ) I d ( on) C i ss g fs Coss C rss % &


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    Ta-25 IRF352 IRF353 IRF360 O-204AE IRF362 TQ-204AE IRF421 IRF448 TQ-204AA irf411 IRF413 IRF449 IRF448 irf362 IRF352 IRF353 IRF360 IRF421 IRF430 PDF

    triac zd 607

    Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
    Text: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.


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    SG73/D triac zd 607 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845 PDF

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


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