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    TRANSISTOR K 1096 Search Results

    TRANSISTOR K 1096 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    CA3082 Rochester Electronics LLC Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR K 1096 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    d667 transistor

    Abstract: nec tokin oe 128 NEC Tokin oe 907 inverter nec tokin diode tp806 K105 mosfet tokin lcd inverter transistor k58 LM2729 D635 sot
    Text: ORDER NO. CPD0304020C1 Notebook Computer CF-73 This is the Service Manual for the following areas. M …for U.S.A. and Canada Model Number Reference The following models are numbered in accordance with the types of CPU, LCD and HDD etc. featured by product.


    Original     		PDF CPD0304020C1 CF-73 CF-731 SuC1707 C1709 C1712 C1713 C1711 R1701 R1700 d667 transistor nec tokin oe 128 NEC Tokin oe 907 inverter nec tokin diode tp806 K105 mosfet tokin lcd inverter transistor k58 LM2729 D635 sot

    SHF300

    Abstract: SFH300 IF-E93A if-e93a-blue IF-E91C-blue IF-E91C CD 4069 HEX INVERTER working of fused tube light using diodes LPT80A IFE93A
    Text: Fiber Optic Lab Manual Fifth Edition 1102.eps INDUSTRIAL FIBER OPTICS * Copyright 2004, Fifth Edition Revision A Previous Printings 1992, 1994, 1996, 1998, 2003 By Industrial Fiber Optics * * * All rights reserved. No part of this publication may be reproduced, stored in a


    Original     		PDF

    MGF4310

    Abstract: MGF4314D MGF4318D MGF4310D MGF4316D MGF4317D M5M27C102P MGF4317 MGF4318 MGF431
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F4310D Series SUPER LOW NOISE InGaAs HEMT DESCRIPTION OUTLINE DRAWING The MGF4310D series super-low-noise HEMT High Electron Mobility Transistor is designed for use in X to K band amplifiers. The hermetically sealed metal-ceramic


    OCR Scan     		PDF MGF4310D 12GHz MGF4314D: MGF4316D. MGF4317D: MGF4318D: M5M27C102P RV-15 MGF4310 MGF4314D MGF4318D MGF4316D MGF4317D MGF4317 MGF4318 MGF431

    MGF4310

    Abstract: 6020M f491
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F4910F Series S U P E R LOW NOISE InGaAs HEMT DESCRIPTION The M GF4910F series super-low-noise HEMT High Electron Mobility Transistor is designed for use in X to K band amplifiers. The hermetically sealed metal-ceramic


    OCR Scan     		PDF F4910F GF4910F MGF4310F 12GHz GF4919F: GF4916F: 12GHz 27C102P, RV-15 MGF4310 6020M f491

    dfp 740

    Abstract: DFP 830 M5M27C102P MGF4511D m5m27c102pffp
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF4511D S U P E R LOW NOISE InGaAs HEMT DESCRIPTION OUTLINE DRAWING The MGF4511D super-low-noise HEMT High Electron Mobility Transistor is designed for use in K band ampli­ fiers. The new metal-ceramic package is used to reduce


    OCR Scan     		PDF MGF4511D MGF4511D 18GHz GD-15 M5M27C102P RV-15 1048576-BIT 65536-W0RD 16-BIT) dfp 740 DFP 830 m5m27c102pffp

    MGF4316F

    Abstract: MGF4319F MGF4310 MGF4319 251C M5M27C102P
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F4310F Series S U P E R LOW NOISE InGaAs HEMT D ESC R IP T IO N O U TLIN E DRAWING The MGF4310F series super-low-noise HEMT High Electron Mobility Transistor is designed for use in X to K band amplifiers. The hermetically sealed metal-ceramic


    OCR Scan     		PDF MGF4310F 12GHz MGF4319F: MGF4316F: M5M27C102P RV-15 1048576-BIT 65536-W0RD MGF4316F MGF4319F MGF4310 MGF4319 251C

    MGF4918D

    Abstract: mgf4914 MGF4914D MGF4910 mitsubishi mgf MGF4917D MGF4916D MGF4917 MGF4910D
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M GF4910D Series TA P E C A R R IER S U P E R LOW NOISE InGaAs HEMT DESCRIPTION OUTLINE D R A W IN G The MGF4910D series super-low-noise HEMT High Electron Mobility Transistor is designed for use in X to K band amplifiers. The hermetically sealed metal-ceramic


    OCR Scan     		PDF MGF4910D 491OD 12GHz MGF4914D: MGF4916D: MGF4917D: MGF4918D: M5M27C102P MGF4918D mgf4914 MGF4914D MGF4910 mitsubishi mgf MGF4917D MGF4916D MGF4917

    gD 679 transistor

    Abstract: MGF4410 M5M27C102P MGF4416D MGF4417D MGF4418D MGF4410D M5M27C102
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF4410D Series S U P E R LOW NOISE InGaAs HEMT DESCRIPTION Th e M G F4410D series su per-lo w -n oise H E M T High Electron M obility Transistor is designed fo r use in X to K band am plifiers. The herm etically sealed m etal-ceram ic


    OCR Scan     		PDF MGF4410D 12GHz MGF4416D: MGF4417D: MGF4418D: M5M27C102P RV-15 1048576-BIT gD 679 transistor MGF4410 MGF4416D MGF4417D MGF4418D M5M27C102

    k 1094 transistor

    Abstract: transistor K 1096 MARKING Dt3 DT3 SC-88 PUMD3
    Text: Philips Semiconductors Preliminary specification NPN/PNP resistor-equipped transistors PUMD3 FEATURES • Transistors with different polarity and built-in bias resistors R1 and R2 typ. 10 k ii each 6 5 4 1 2 3 • No mutual interference between the transistors


    OCR Scan     		PDF SC-88) SC-88 k 1094 transistor transistor K 1096 MARKING Dt3 DT3 SC-88 PUMD3

    philips tea 1091

    Abstract: TEA 1091 philips tea 1090 ic tea 1090 TEA 1091 philips A1065 circuit diagram for automatic voltage regulator dpi 510 LV 1084 73 TEA1065
    Text: Philips Product specification Versatile telephone transmission circuit with dialler interface FEATURES • Current and voltage regulator mode with adjustable static resistances • Provides supply for external


    OCR Scan     		PDF TEA1065 711QflEt. 3c131 110fl2ti 7110fl2Â 00fi3T41 philips tea 1091 TEA 1091 philips tea 1090 ic tea 1090 TEA 1091 philips A1065 circuit diagram for automatic voltage regulator dpi 510 LV 1084 73 TEA1065

    BFG55A

    Abstract: philips discrete a440 IC05 philips a1211 lg SMD MARKING CODE ALg BST60
    Text: Philips Semiconductors Surface mounted semiconductors Contents page PART A SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors


    OCR Scan     		PDF LCD01 BFG55A philips discrete a440 IC05 philips a1211 lg SMD MARKING CODE ALg BST60

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE b b S B ' i a i □QSt17Q5 2flb WAPX b'JE D X BLY89C V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, industrial and military transmitters with a nominal supply voltage of 13,5 V. The transistor is resistance stabilized


    OCR Scan     		PDF QSt17Q5 BLY89C Z77109 7Z7710S

    LD25V

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has


    OCR Scan     		PDF BUK9510-30 T0220AB LD25V

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS NPN Silicon Double Transistors BCV61 • To be used as a current mirror • Good thermal coupling and V be matching • High current gain • Low emitter-saturation voltage Type Marking Ordering Code tape and reel BCV 61 A BCV61 B BCV 61 C 1Js 1Ks


    OCR Scan     		PDF BCV61 BCV61 Q62702-C2155 Q62702-C2156 Q62702-C2157 OT-143 fi235b05 fl235b05

    transistor f6 13003

    Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
    Text: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.


    OCR Scan     		PDF SC08b transistor f6 13003 equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350

    TCA160

    Abstract: BY164 Mullard C296 TAA310A TAA435 TAA700 TBA550 TBA480 PCC88 TAA300
    Text: MULLARD DATA BOOK 1973-74 ER R A TA A U G U S T 1973 j\ 1 d - ^ Mullard Limited Renewal Sales Department Mullard House Torrington Place London WC1E 7HD N / , S E M IC O M D U C Type No. Page No. AC187 13 Correction Delete minus signs to read: *IC = 300m A;


    OCR Scan     		PDF AC187 BC157 BC158 BC159 BC186 BC187 BD201 BD202 BD203 BD204 TCA160 BY164 Mullard C296 TAA310A TAA435 TAA700 TBA550 TBA480 PCC88 TAA300

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Objective Specification PowerMOS transistor Isolated version fo PHP1N50E GENERAL DESCRIPTION PHX1N50E QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER field-effect power transistor in a full pack, plastic envelope featuring high


    OCR Scan     		PDF PHP1N50E PHX1N50E

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Objective Specification PowerMOS transistor Isolated version fo PHP1N50E GEN ER AL DESCRIPTION PHX1N50E QUICK R EFEREN CE DATA N-channel enhancement mode field-effect power transistor in a fuf! pack, plastic envelope featuring high avalanche energy capability, stable


    OCR Scan     		PDF PHP1N50E PHX1N50E PINNING-SOT186A

    MOTOROLA d1100

    Abstract: max525 DIGITA ECHO DELAY IC 935
    Text: 19-1096;Rev0;6/96 Low -Pow er, Quad, 12-B it Voltage-O utput DAC w ith S é ria i In te rfa c e Features ♦ Four 12-Bit DACs with Configurable Output Amplifiers ♦ +5V Single-Supply Operation ♦ Low Supply Current: 0.85mA Normal Operation 10pA Shutdown Mode


    OCR Scan     		PDF MAX525 12-bit 20-pin MAX525BC/D MAX525AEPP MAX525BEPP 20SSOP MAX525AEAP MOTOROLA d1100 DIGITA ECHO DELAY IC 935

    4013AE

    Abstract: 4016AE 4019AE HBF4002AE hbf4011AE HBF4049AE HBF4013AE HBF4008AE HBF4029AE HBF4025AE
    Text: S G S -A T E S Sem iconductors Digital I.C .'s-C O S /M O S Integrated Circuits -C O S /M O S HBF4000AE Series FEATURES V ery low pow er dissipation: 10 n W typ./gate package Equivalent to R C A CD40Q0AE series 10 ,xW ty p./MSI D E S C R IP T IO N T h e H B F4000 A E series is a complementary N and


    OCR Scan     		PDF HBF4000AE CD4000AE 4012AE 4016AE 4013AE 4014AE 017AE 4019AE 4013AE 4016AE 4019AE HBF4002AE hbf4011AE HBF4049AE HBF4013AE HBF4008AE HBF4029AE HBF4025AE

    Motorola transistors MRF 947

    Abstract: motorola hep cross reference 2N5070 2N5591 MOTOROLA Semicon volume 1 mrf532 transistor equivalents for 2n3866 siemens semiconductor manual Microlab Splitter Specification sheet pt9797
    Text: MOTOROLA RF DATA MANUAL Prepared by Technical Information Center M otorola’s leadership position of RF power, small-signal transistors and hybrid amplifiers is by research and new product development coupled with a com plete in-house m anufacturing ca pa b ility in clu d in g silico n g row ing,


    OCR Scan     		PDF

    BFR91 philips

    Abstract: No abstract text available
    Text: bbS3T31 0025175 2S4 M A P X Philips Semiconductors N AMER PHILIPS/DISCRETE NPN 5 GHz wideband transistor Product specification b7E » £ BFR93 DESCRIPTION NPN transistor in a plastic SOT23 envelope primarily intended for use in RF amplifiers and oscillators. The


    OCR Scan     		PDF bbS3T31 BFR93 ON4186) BFT93. BFR91 philips

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


    OCR Scan     		PDF

    TR4943

    Abstract: SKB 7 02 LC66506B LC66508B LC66512B LC66516B LC66556A LC66E516 P91PA QFC64
    Text: Ordering number: EN ÌK2928A ? CMOS LSI LC66E516 No. *2928A i Preliminary 4-Bit Single Chip Microcomputer with EPROM Overview The LC66E516 is a 4-bit single-chip microcomputer w ith an EPROM on-chip, and can be used for developing and evaluating application programs for the LC665XX series 4-bit single-chip


    OCR Scan     		PDF c2928A LC66E516 LC66E516 LC665XX DIC64S QFC64 TR4943 SKB 7 02 LC66506B LC66508B LC66512B LC66516B LC66556A P91PA