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    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F4410D Series I SUPER LOW NOISE InGaAs HEMT i DESCRIPTION The M G F 4 4 1 0D series super-low -noise HEMT High Electron M ob ility Transistor is designed fo r use in X to K band am plifiers. The herm etically sealed m etal-ceram ic


    OCR Scan     		PDF F4410D MGF4416D MGF4417D MGF4418D

    4410D

    Abstract: F4410D
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F4410D Series j SUPER LOW NOISE InGaAs HEMT 1-


    OCR Scan     		PDF F4410D 4410D MGF4416D MGF4417D MGF4418D

    gD 679 transistor

    Abstract: MGF4410 M5M27C102P MGF4416D MGF4417D MGF4418D MGF4410D M5M27C102
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> F4410D Series S U P E R LOW NOISE InGaAs HEMT DESCRIPTION Th e M G F4410D series su per-lo w -n oise H E M T High Electron M obility Transistor is designed fo r use in X to K band am plifiers. The herm etically sealed m etal-ceram ic


    OCR Scan     		PDF MGF4410D 12GHz MGF4416D: MGF4417D: MGF4418D: M5M27C102P RV-15 1048576-BIT gD 679 transistor MGF4410 MGF4416D MGF4417D MGF4418D M5M27C102