f4316
Abstract: F4319F MGF4319F
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F4310F Series ! S U P E R LOW NOISE InGaAs HEMT DESCRIPTION OUTLINE DRAWING The M G F 4 3 1 0F series super-low -noise HEMT High Electron M o b ility Transistor is designed fo r use in X to K band am plifiers. The herm etically sealed m etal-ceram ic
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F4310F
F4316F
F4319F
f4316
F4319F
MGF4319F
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MGF4316F
Abstract: MGF4319F MGF4310 MGF4319 251C M5M27C102P
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F4310F Series S U P E R LOW NOISE InGaAs HEMT D ESC R IP T IO N O U TLIN E DRAWING The F4310F series super-low-noise HEMT High Electron Mobility Transistor is designed for use in X to K band amplifiers. The hermetically sealed metal-ceramic
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MGF4310F
12GHz
MGF4319F:
MGF4316F:
M5M27C102P
RV-15
1048576-BIT
65536-W0RD
MGF4316F
MGF4319F
MGF4310
MGF4319
251C
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MGF4916F
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF4910F Series SUPER LOW NOISE InGaAs HEMT DESCRIPTION The M G F 4 9 1 0 F series super-low -noise HEMT High Electron M ob ility Transistor is designed fo r use in X to K band am plifiers. The herm etically sealed m etal-ceram ic
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MGF4910F
F4310F
4910F
MGF4916F
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