bosch ecu 0 261 200 218 connection diagram
Abstract: CK 77-1 3 94V-0 WK2 94V0 KL SN 102 94v-0 lcd wiring diagram relay ECU bosch ME 7.4.9 circuit diagram used for pick and place colour sensing robot bosch ecu 0 261 200 100 connection diagram bosch 0 261 204 243 ecu circuit wk2 94v-0 0838
Text: Canada Wieland Electric Inc. 2889 Brighton Road Oakville, Ontario L6H 6C9 Phone: 905 829-8414 Fax: (905) 829-8413 e-mail: oakville@wielandinc.com On the Internet: www.wielandinc.com DIN rail terminal blocks • with screw connection • with spring connection
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1-800-wieland
bosch ecu 0 261 200 218 connection diagram
CK 77-1 3 94V-0
WK2 94V0
KL SN 102 94v-0 lcd
wiring diagram relay
ECU bosch ME 7.4.9
circuit diagram used for pick and place colour sensing robot
bosch ecu 0 261 200 100 connection diagram
bosch 0 261 204 243 ecu circuit
wk2 94v-0 0838
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LD 8105 GL
Abstract: BFK 82 99.801.3900.9 F8313 LD25V BFK12 bfk13 cn/A/U 237 BG 98.060.0000.0 15x5
Text: contents contents contents of type description TYPE Type Part no. ,0 BIS 11,0 MM ,0 BIS 11,0 MM ,5 BIS 13,5 MM ,5 BIS 6,5 MM .ADC 1 GELB / 70 E S35 0,0 BIS 17,0 MM 0,2 -0,56 QMM 0,2 -0,56 QMM 0,2 -0,56 QMM 0,2 -0,56 QMM 0,5 -01,5 QMM 0,5 -1,5 QMM 0,5 -1,5 QMM
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ld33v
Abstract: LD33V voltage regulator voltage regulator ld33v LD25V voltage regulator ld18v st ld33v ld18v LD33V regulator ST LD33V voltage regulator STR912FA
Text: AN2633 Application note STR91xFA low power management and power consumption Introduction Power consumption is a significant issue for developers of embedded systems today. Whether the target application is a cellphone, MP3 player, remote control, bio-medical
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AN2633
STR91xFA
ld33v
LD33V voltage regulator
voltage regulator ld33v
LD25V
voltage regulator ld18v
st ld33v
ld18v
LD33V regulator
ST LD33V voltage regulator
STR912FA
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Untitled
Abstract: No abstract text available
Text: High Voltage MOSFET IXTA2N100 IXTP2N100 N-Channel Enhancement Mode v DSS ^D25 P DS on =1000 V =2A =7Q 9 Symbol Test Conditions V ¥ dss Tj =25°Cto150°C 1000 V VDGR Tj = 25° C to 150° C; RGS= 1 MQ 1000 V Continuous i2 0 V Transient 130 V VGS v GSM ^D25
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IXTA2N100
IXTP2N100
Cto150
O-263
O-22QAB
1999IXYS
C2-76
C2-77
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Untitled
Abstract: No abstract text available
Text: □ IXYS HiPerFET IXFJ 13N50 V DSS Power MOSFETs ^D cont D DS(on) N-Channel Enhancement Mode Highdv/dt, Lowtrr, HDMOS™ Family Symbol t rr Tj = 25°C to 150°C 500 V v DGR Tj = 25°C to 150°C; RGS = 1 Mß 500 V V GS Continuous ±20 V VGSM Transient
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13N50
25value
13N50
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80N20
Abstract: TEA 2029 A
Text: IÖIXYS HiPerFET Power MOSFETs v p DSS ^D25 DS on 200 V 72 A 35 mû 200 V 80 A 30 m a t < 200 ns IXFK72N20 IXFK80N20 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Preliminary data Symbol Test Conditions Maximum Ratings VOSS Tj = 2 5 °C tO l50°C
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IXFK72N20
IXFK80N20
72N20
80N20
80N20
25value
IXFK72N20
TEA 2029 A
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2N100
Abstract: C285 IXTP2N100A
Text: ItilXYS IXTA/fXTP 2 N100 IXTA/IXTP 2 N100A VDSS ^D25 1000 V 1000 V 2A 2A p DS on 7.0 Û 6.0 ß N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VOSS Tj = 25°C to 150°C 1000 V V Tj = 25°C to 150°C; RGS= 1 M fi 1000 V Vos VGSM Continuous
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N100A
O-220
O-263
2N100
2N100A
2N100A
C2-85
C285
IXTP2N100A
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13n50
Abstract: IXYS DS 145 MAX1352
Text: gixYS HiPerFET Power MOSFETs IXFJ 13N50 VDSS = 500 V iD cont = 13 A \ N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family Test Conditions VDSS Tj =25°Cto150°C 500 V VDGR T j = 25° C to 150° C; RQS= 1 M£2 500 V Vos v GSM Continuous ±20
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13N50
Cto150
T0-220
C1-111
IXYS DS 145
MAX1352
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TOp-264 vg
Abstract: No abstract text available
Text: □ IXYS Preliminary data V DSS HiPerFET Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Lowtrr Test Conditions Maximum Ratings V DSS Td = 25°C to 150°C 200 V v DGR Td = 25°C to 150°C; RGS = 1 M£i 200 V VGS VGSM Continuous ±20
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72N20
80N20
O-264
IXFK72N20
IXFK80N20
TOp-264 vg
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Untitled
Abstract: No abstract text available
Text: □ IXYS HiPerFET VDSS Power MOSFETs IXFK 110 N06 IXFK 105 N07 IXFK 110 N07 N -C h an n el E n h a n ce m e n t M ode A v a la n c h e R ated, High dv/dt, L o w trr Symbol TestConditions v DSS Tj = 25°C to 150°C v DGR Td = 25°C to 150°C; RGS = 1 M£i
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O-264
110N06
105N07
110N07
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Untitled
Abstract: No abstract text available
Text: HiPerFET Power MOSFETs ix f n 200N07 Maximum Ratings Tj = 25° C to 150° C Tj = 25°C to 150°C; RGS= 1 Mi2 Va, VGSM ^0130 U EAR 70 70 V V Continuous Transient ±20 ±30 V V Tc= 25° C Tc= 130° C, limited by external leads Tc= 25° C, pulse width limited by TJM
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200N07
OT-227
E153432
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Untitled
Abstract: No abstract text available
Text: □ IXYS HiPerFET Power MOSFETs IXFN 200 N06 IXFN180 N07 IXFN 200 N07 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, L ow trr Symbol N07 N06 N07 N06 70 60 70 60 V V V V Continuous ±20 V Transient ±30 V 180 A Td = 25°C to 150°C; RGS = 1 M ß
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IXFN180
E153432
200N06/200N07
180N07
200N06
180N07
200N07
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Untitled
Abstract: No abstract text available
Text: □ IXYS H H ifl JL æ* X HiPerFET Power MOSFETs Single DieMOSFET ix f n 34N80 v , DSS ^D25 N-Channel Enhancement Mode Avalanche Rated, Highdv/dt, Lowtrr R DS on = 800 V = 34 A = 0.24 Q trr < 250 ns Preliminary data sheet Maximum Ratings Symbol Test C onditions
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34N80
OT-227
E153432
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72N2
Abstract: diode 253 SMD-264 TO-264-aa 80N20
Text: OIXYS Preliminary data vDSS HiPerFET Power MOSFETs ^D25 RDS on 200 V 72 A 35 mQ 200 V 80 A 30 mQ t < 200 ns IXFK72N20 IXFK80N20 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t„ Symbol Test Conditions Maximum Ratings VDSS VDGR Tj = 25°C to 150°C
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IXFK72N20
IXFK80N20
72N20
80N20
80N20
O-264
UL94V-0
IXFK72N2Ô
72N2
diode 253
SMD-264
TO-264-aa
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