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Catalog Datasheet	MFG & Type	PDF	Document Tags
MGF4418D Abstract: low noise x band hemt transistor MGF4410D NF510 MGF4416D gm 09 134 755 MGF4417D low noise hemt transistor k 1241 transistor transistor K D 2499 Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> bSM'iôe'i 0 Q 1 7 Û Ô 3 T32 MGF4410D Series SU PER LOW NOISE InGaAs HEMT DESCRIPTION The M G F 4 4 1 0 D OUTLINE DRAWING series super-low-noise HEMT High Electron Mobility Transistor is designed for use in X to K band amplifiers. The hermetically sealed metal-ceramic	OCR Scan	PDF	MGF4410D 12GHz MGF4416D: MGF4417D: MGF4418D: unit071 0017A6b MGF4418D low noise x band hemt transistor NF510 MGF4416D gm 09 134 755 MGF4417D low noise hemt transistor k 1241 transistor transistor K D 2499
gD 679 transistor Abstract: MGF4410 M5M27C102P MGF4416D MGF4417D MGF4418D MGF4410D M5M27C102 Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF4410D Series S U P E R LOW NOISE InGaAs HEMT DESCRIPTION Th e M G F4410D series su per-lo w -n oise H E M T High Electron M obility Transistor is designed fo r use in X to K band am plifiers. The herm etically sealed m etal-ceram ic	OCR Scan	PDF	MGF4410D 12GHz MGF4416D: MGF4417D: MGF4418D: M5M27C102P RV-15 1048576-BIT gD 679 transistor MGF4410 MGF4416D MGF4417D MGF4418D M5M27C102
MGF1200 Abstract: MGF4310 MGF1100 MGF1412 MGF4301 MGF1304 MGF7003 MGF1102 MGF1302 MGF4305A Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> SYMBOL ON PACKAGE EXAMPLE OF SYMBOL ON MICRO DISK PACKAGE W ithou t bottom bar w ith b o tto m bar Blue A p r. O o t. Orange M ay N ov. B lack June D ec. Red July Jan . Green A ug. Feb. Brown S ep. M a r. « L e f t side c h a ra c te r in d ic a te s th e type num ber.	OCR Scan	PDF	MGF1102 MGF1302 MGF1303B MGFI323 MGF1402B MGFI412B MGF1403B MGF1423B MGFI425B MGFI902B MGF1200 MGF4310 MGF1100 MGF1412 MGF4301 MGF1304 MGF7003 MGF4305A

Catalog Datasheet

MFG & Type

PDF

Document Tags

MGF4418D

Abstract: low noise x band hemt transistor MGF4410D NF510 MGF4416D gm 09 134 755 MGF4417D low noise hemt transistor k 1241 transistor transistor K D 2499
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> bSM'iôe'i 0 Q 1 7 Û Ô 3 T32 MGF4410D Series SU PER LOW NOISE InGaAs HEMT DESCRIPTION The M G F 4 4 1 0 D OUTLINE DRAWING series super-low-noise HEMT High Electron Mobility Transistor is designed for use in X to K band amplifiers. The hermetically sealed metal-ceramic

OCR Scan

PDF

MGF4410D 12GHz MGF4416D: MGF4417D: MGF4418D: unit071 0017A6b MGF4418D low noise x band hemt transistor NF510 MGF4416D gm 09 134 755 MGF4417D low noise hemt transistor k 1241 transistor transistor K D 2499

gD 679 transistor

Abstract: MGF4410 M5M27C102P MGF4416D MGF4417D MGF4418D MGF4410D M5M27C102
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF4410D Series S U P E R LOW NOISE InGaAs HEMT DESCRIPTION Th e M G F4410D series su per-lo w -n oise H E M T High Electron M obility Transistor is designed fo r use in X to K band am plifiers. The herm etically sealed m etal-ceram ic

OCR Scan

PDF

MGF4410D 12GHz MGF4416D: MGF4417D: MGF4418D: M5M27C102P RV-15 1048576-BIT gD 679 transistor MGF4410 MGF4416D MGF4417D MGF4418D M5M27C102

MGF1200

Abstract: MGF4310 MGF1100 MGF1412 MGF4301 MGF1304 MGF7003 MGF1102 MGF1302 MGF4305A
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> SYMBOL ON PACKAGE EXAMPLE OF SYMBOL ON MICRO DISK PACKAGE W ithou t bottom bar w ith b o tto m bar Blue A p r. O o t. Orange M ay N ov. B lack June D ec. Red July Jan . Green A ug. Feb. Brown S ep. M a r. « L e f t side c h a ra c te r in d ic a te s th e type num ber.

OCR Scan

PDF

MGF1102 MGF1302 MGF1303B MGFI323 MGF1402B MGFI412B MGF1403B MGF1423B MGFI425B MGFI902B MGF1200 MGF4310 MGF1100 MGF1412 MGF4301 MGF1304 MGF7003 MGF4305A