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    MGF4316F

    Abstract: MGF4319F MGF4310 MGF4319 251C M5M27C102P
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F4310F Series S U P E R LOW NOISE InGaAs HEMT D ESC R IP T IO N O U TLIN E DRAWING The MGF4310F series super-low-noise HEMT High Electron Mobility Transistor is designed for use in X to K band amplifiers. The hermetically sealed metal-ceramic


    OCR Scan     		PDF MGF4310F 12GHz MGF4319F: MGF4316F: M5M27C102P RV-15 1048576-BIT 65536-W0RD MGF4316F MGF4319F MGF4310 MGF4319 251C

    MGF4310

    Abstract: 6020M f491
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F4910F Series S U P E R LOW NOISE InGaAs HEMT DESCRIPTION The M GF4910F series super-low-noise HEMT High Electron Mobility Transistor is designed for use in X to K band amplifiers. The hermetically sealed metal-ceramic


    OCR Scan     		PDF F4910F GF4910F MGF4310F 12GHz GF4919F: GF4916F: 12GHz 27C102P, RV-15 MGF4310 6020M f491