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    TRANSISTOR 131 TIP Search Results

    TRANSISTOR 131 TIP Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 131 TIP Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    TIP3055 Collector Peak Current

    Abstract: 1U105 TIP2955 TIP3055 transistor TIP3055 transistor tip2955
    Text: TIP2955 A _ SILICON POWER TRANSISTOR P-N-P epitaxial-base power transistor in a plastic SOT-93 envelope, fo r use in audio ou tput stages and general am plifier and switching applications. N-P-N complement is TIP3055. Q UICK REFERENCE D A T A Collector-base voltage open em itter


    OCR Scan     		TIP2955 OT-93 TIP3055. OT-93. Pinning55 72B1016 QQ35D1S TIP3055 Collector Peak Current 1U105 TIP2955 TIP3055 transistor TIP3055 transistor tip2955 PDF

    TIP132

    Abstract: TIP136 TIP130 TIP131 TIP135 TIP137 tip132.tip137
    Text: ¿Z&MOSPEC PLASTIC MEDIUM-POWER COPLEMENTARY SILICON TRANSISTORS NPN TIP130 TIP131 TIP132 .designed for general-purpose amplifier and low speed switching applications FEATURES: * Collector-Emitter Sustaining VoltageVCE0 8us = 6 0 V (Min) - TIP130.TIP135


    OCR Scan     		TIP130 TIP135 TIPI31 TIPI36 TIP132 TIP137 TIP131 TIP136 TIP136 TIP135 TIP137 tip132.tip137 PDF

    CNR36

    Abstract: D020 T015 phototransistor t418
    Text: rr •I ^53=131 G020Ô71 1 ■ DEVELOPMENT DATA 11 This data sheet contains advance Inform ation and specifications are subject to change w ith o u t notice. CNR36 N AMER PHILIPS/DISCRETE S5E HIGH-SPEED OPTOCOUPLER The CNR36 is a fast switching optocoupler consisting of a GaAIAs light emitting diode which is opti­


    OCR Scan     		CNR36 REFEREN10 7Z97263 bbS3131 CNR36 T-41-83 7Z97271 7Z97289 7Z97272 D020 T015 phototransistor t418 PDF

    CNX71

    Abstract: No abstract text available
    Text: [ [ N AMER PHILIPS/DISCRETE 2SE D • kbS3*m QQSIOHS 0 ■ Jl CNX71 HIGH-VOLTAGE OPTOCOUPLER The CNX71 is an optocoupler consisting o f an infrared emitting GaAs diode and a silicon npn phototransistor in a dual-in-line OIL plastic envelope. The base is not connected.


    OCR Scan     		CNX71 E90700 0110b AC/450 57/804/VDE CNX71 GQ21Q34 T-41-83 7Z82663 PDF

    MCP102

    Abstract: transistor chn 037 chn 037 chn 935 CHN 950 MCP103 MCP121 MCP131 DS21906 transistor chn 115
    Text: MCP102/103/121/131 Micropower Voltage Supervisors Features Package Types RST 1 VDD 2 3 VSS RST VDD VSS SOT23-3/SC-70 VSS 1 3 VDD RST 2 Block Diagram • Critical Microcontroller and Microprocessor Power Monitoring Applications • Computers • Intelligent Instruments


    Original     		MCP102/103/121/131 OT23-3/SC-70 MCP102/103/121/131 MCP103 MCP102/121/131 curre334-8870 DS21906A-page MCP102 transistor chn 037 chn 037 chn 935 CHN 950 MCP103 MCP121 MCP131 DS21906 transistor chn 115 PDF

    MCP103-300I/transistor chn 047

    Abstract: No abstract text available
    Text: MCP102/103/121/131 Micropower Voltage Supervisors Package Types SOT23-3/SC-70 RST 1 VDD 2 TO-92 3 VSS RST VDD VSS SOT23-3/SC-70 VSS 1 MCP103 • Ultra low supply current: 1.75 µA steady-state max. • Precision monitoring options of: - 1.90V, 2.32V, 2.63V, 2.93V, 3.08V, 4.38V


    Original     		MCP102/103/121/131 OT23-3/SC-70 MCP103 MCP121: MCP131: MCP102 MCP103: OT23-3, SC-70 MCP103-300I/transistor chn 047 PDF

    Supervisors

    Abstract: MCP1XX transistor chn 047 CHN 445 CHN 950 equivalent transistor TT 3034 transistor chn 037 MCP102 transistor chn 115 mcp102t195
    Text: MCP102/103/121/131 Micropower Voltage Supervisors Package Types SOT23-3/SC-70 RST 1 VDD 2 TO-92 3 VSS RST VDD VSS SOT23-3/SC-70 VSS 1 MCP103 • Ultra low supply current: 1.75 µA steady-state max. • Precision monitoring options of: - 1.90V, 2.32V, 2.63V, 2.93V, 3.08V, 4.38V


    Original     		MCP102/103/121/131 OT23-3/SC-70 MCP103 MCP121: MCP131: MCP102 MCP103: OT23-3, SC-70 Supervisors MCP1XX transistor chn 047 CHN 445 CHN 950 equivalent transistor TT 3034 transistor chn 037 transistor chn 115 mcp102t195 PDF

    Untitled

    Abstract: No abstract text available
    Text: W m tip L 'fiaïï PHAE CWKLAERT DT Avantek Products Thin-Film Cascadable Amplifier 5 to 1000 MHz Technical Data UTO/UTC/PPA 1005 Series Features • Frequency Range: 5 to 1000 MHz • High Dynamic Range • High Output Power: +21.0 dBm Typ • Noise Figure: 5.0 dB (Typ)


    OCR Scan     		PDF

    transistor chn 037

    Abstract: LB 122 transistor To-92 chn 037 MCP1XX-475
    Text: MCP102/103/121/131 Micropower Voltage Supervisors Package Types SOT23-3/SC-70 RST 1 VDD 2 TO-92 3 VSS RST VDD VSS SOT23-3/SC-70 VSS 1 MCP103 • Ultra low supply current: 1.75 µA steady-state max. • Precision monitoring options of: - 1.90V, 2.32V, 2.63V, 2.93V, 3.08V, 4.38V and


    Original     		MCP102/103/121/131 MCP121: MCP131: MCP102 MCP103: OT23-3, SC-70 MCP1XX-195) MCP1XX-195 OT23-3/SC-70 transistor chn 037 LB 122 transistor To-92 chn 037 MCP1XX-475 PDF

    I8212

    Abstract: No abstract text available
    Text: TIP30F TIP30AF; TIP30BF TIP30CF: TIP30DF PHILIPS INTERNATIONAL 5 bE D I 7 1 1 DflEb [IDM3 4 bb 7 G 0 « P H I N SILICON EPITAXIAL POWER TRANSISTORS PNP silicon power transistor in a SOT186 envelope with an electrically insulated mounting base, for use in audio output stages and for general purpose amplifier and high-speed switching applications.


    OCR Scan     		TIP30F TIP30AF; TIP30BF TIP30CF: TIP30DF OT186 TIP29F, TIP29AF, TIP29BF, TIP29CF I8212 PDF

    optocoupler 357

    Abstract: No abstract text available
    Text: SL5504 J V O PTO C O U PLER Optically coupled isolator consisting of an infrared emitting GaAs diode and a high voltage silicon npn phototransistor w ith accessible base. Plastic envelope. Suitable for TTL integrated circuits Features • High output/input DC current transfer ratio


    OCR Scan     		SL5504 bbS3T31 QD35S64 optocoupler 357 PDF

    PHILIPS CNX36

    Abstract: optocoupler cnx36 cnx36 CNX35 PHILIPS CNX35 CNX35U CNX36U CNX39 CNX39U T-41-83
    Text: CNX35 CNX36 CNX39 •I bbS3T31 005QT15 k N AÏ1ER PHILIPS/DISCRETE SSE D T ~ H \ ~ 8 3 OPTOCOUPLERS Optically coupled isolators consisting of an infrared emitting GaAs diode and a silicon npn photo transistor with accessible base. Plastic envelopes. Suitable for T T L integrated circuits.


    OCR Scan     		bbS3T31 005CH15 CNX35 CNX36 CNX39 T-41-03 CNX35U, CNX36U CNX39U. 20pective PHILIPS CNX36 optocoupler cnx36 cnx36 CNX35 PHILIPS CNX35 CNX35U CNX39 CNX39U T-41-83 PDF

    DS41285A

    Abstract: tip 147 TRANSISTOR equivalent transistor 131 tip ZENER DIODE POWER RATING IRF7201 IRF7467 MCP2515 MCP2551 MCP3221 Tricks
    Text: 3V Tips ‘n Tricks M Tips ‘n Tricks Table of Contents Tips ‘N Tricks Introduction TIP #1: TIP #2: TIP #3: TIP #4: TIP #5: TIP #6: TIP #7: TIP #8: TIP #9: TIP #10: TIP #11: TIP #12: TIP #13: TIP #14: TIP #15: TIP #16: TIP #17: TIP #18: TIP #19: Powering 3.3V Systems From 5V


    Original     		DS41285A DS41285A* DS41285A tip 147 TRANSISTOR equivalent transistor 131 tip ZENER DIODE POWER RATING IRF7201 IRF7467 MCP2515 MCP2551 MCP3221 Tricks PDF

    LMV431

    Abstract: high power pulse generator with mosfet Signal path designer LM5117
    Text: POWER designer Expert tips, tricks, and techniques for powerful designs No. 131 Precision Output Current Limiting Using Average Current Monitor Feature — By Eric Lee, Applications Engineer and Robert Bell, Design Center Director Introduction Traditionally, current limiting of a buck regulator


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: WJ-PA38/SMPA38 200 to 2000 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT WIDE BANDWIDTH: 200-2400 MHz TYP. HIGH OUTPUT LEVEL: +23.0 dBm (TYP.) LOW NOISE FIGURE: 4.0 dB (TYP.) HIGH THIRD ORDER INTERCEPT POINT: +34 dBm (TYP.)


    OCR Scan     		WJ-PA38/SMPA38 PDF

    30BF

    Abstract: TIP30DF TIP3 TIP29AF TIP29BF TIP29CF TIP29DF TIP29F TIP30AF TIP30BF
    Text: TIP30F TIP30AF; TIP30BF TIP30CF: TIP30DF PHILIPS INTERNATIONAL Sb E D I 7110ä2b 00M34bb 700 « P H I N SILICON EPITAXIAL POWER TRANSISTORS T - & - IT PNP silicon power transistor in a S O T 186 envelope w ith an electrically insulated mounting base, for use in audio output stages and for general purpose am plifier and high-speed switching applications.


    OCR Scan     		TIP30F TIP30AF; TIP30BF TIP30CF: TIP30DF 00M34bb T-33-IT OT186 TIP29F, TIP29AF, 30BF TIP30DF TIP3 TIP29AF TIP29BF TIP29CF TIP29DF TIP29F TIP30AF TIP30BF PDF

    MICROPROCESSOR Z80

    Abstract: uPD72020 uPC5102 transistor 2p4m UPD6487 2SD1557 2SJ 3305 UPD77529 TRANSISTOR SOD MARKING CODE 352A micro servo 9g tower pro
    Text: The export of these products from Japan is regulated by the Japanese government. The export of some or all of these products may be prohibited without governmental license. To export or re-export some or all of these products from a country other than Japan may also be prohibited without a license from that country. Please call


    Original     		Z80TM V20TM, V20HLTM, V25TM, V25HSTM, V30TM, V30HLTM, V33TM, V33ATM, V35TM, MICROPROCESSOR Z80 uPD72020 uPC5102 transistor 2p4m UPD6487 2SD1557 2SJ 3305 UPD77529 TRANSISTOR SOD MARKING CODE 352A micro servo 9g tower pro PDF

    transistor marking code 12W SOT-23

    Abstract: MGB20N40CL laptop charging crb kp series stepper motor japan servo co 2n3773 power Amplifier circuit diagrams MJ2955 TRANSISTOR pwm brush dc motor controller sg3526 SG3526 boost controller for PWM fan tl494 tip122 tip127 mosfet audio amp
    Text: SG388/D Rev. 1, Aug-1999 ON Semiconductor PUBLICATION ORDERING INFORMATION USA/EUROPE Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5193, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada


    Original     		SG388/D Aug-1999 r14153 transistor marking code 12W SOT-23 MGB20N40CL laptop charging crb kp series stepper motor japan servo co 2n3773 power Amplifier circuit diagrams MJ2955 TRANSISTOR pwm brush dc motor controller sg3526 SG3526 boost controller for PWM fan tl494 tip122 tip127 mosfet audio amp PDF

    FET transistors with s-parameters

    Abstract: MICROWAVE ASSOCIATES MA4F600 f TIP 122 transistor MA4F004-918 ma4f004
    Text: M/A-COM SEMICONDUCTOR “TÍ »T|st,M2al4 000Db25 t. J~. ¿S' AߣR MA4F004 Series Gallium Arsenide Field Effect Transistor Description The MA4F004 series of gallium arsenide fieldeffect transistors GaAs FETs is a series of Schottky barrier devices with a 1 micron length X


    OCR Scan     		000Db25 MA4F004 4701B MA-4F001 MA-4F004 MA-4F600 MA-4F200 MA-4F300 FET transistors with s-parameters MICROWAVE ASSOCIATES MA4F600 f TIP 122 transistor MA4F004-918 PDF

    Untitled

    Abstract: No abstract text available
    Text: H11B1 H11B2 H11B3 O P T O C O U P L E R S Optically coupled isolators consisting o f an infrared emitting GaAs diode and an npn silicon photoDarlington transistor. Features • Very high output/input DC current transfer ratio • Isolation voltage o f 2 kV RMS and 2.82 kV DC


    OCR Scan     		H11B1 H11B2 H11B3 0110b bbS3T31 D03SSD4 PDF

    crystal PHILIPS

    Abstract: by 028 x200 LTE42008R OP214 PTB23001X roe eg aeg power base 60 b 40/085/philips 40/085/aeg power base 60 b
    Text: - 7 = -3 /-fO Preliminary specification Philips Semiconductors NPN silicon planar epitaxial microwave crystal PHILIPS INTERNATIONAL FEATURES • Multiple ion Implantation for optimum concentration profile • Self-alignment process for better reproducibility


    OCR Scan     		OP214 711062b 3-5-52/E crystal PHILIPS by 028 x200 LTE42008R OP214 PTB23001X roe eg aeg power base 60 b 40/085/philips 40/085/aeg power base 60 b PDF

    H11B255

    Abstract: sot-90B OPTOCOUPLER dc
    Text: H11B255 _ y \ _ OPTOCOUPLER O ptically coupled isolator consisting o f an infrared em itting GaAs diode and an npn silicon photo­ Darlington transistor. Features • High maxim um o u tp u t voltage • V ery high o u tp u t/in p u t DC current transfer ratio


    OCR Scan     		H11B255 0110b 7Z94797A H11B255 sot-90B OPTOCOUPLER dc PDF

    UPC8236

    Abstract: MRFE6VP m74 7 segment display Mounting and Soldering of RF transistors MOBILE jammer GSM 1800 MHZ circuit diagram BLF4G08LS-160A rf Amplifier mhz Doherty 470-860 RF transceiver 802.11AC AN10882 m74 7 segment display input
    Text: RF Manual 16 edition th Application and design manual for High Performance RF products June 2012 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s


    Original     		PDF

    OMRON EE-1001

    Abstract: EE-1001 EE-sb5v-e OMRON EE-1006 EE-1006 EE-2002 transistor A 1006
    Text: EE-SB5M/SB5MC/SB5V/SB5VC/SB5V-E Photomicrosensor with 80-mA Switching Capacity that can be Built into Equipment H Built-in amplifier with NPN output H Models available with 5- to 12-VDC and 5H H H H H to 15-VDC input CMOS- and TTL-compatible 19-mm sensing distance EE-SB5V-E


    Original     		80-mA 12-VDC 15-VDC 19-mm EE-1001/1006) EE-2002 1-800-55-OMRON OMRON EE-1001 EE-1001 EE-sb5v-e OMRON EE-1006 EE-1006 EE-2002 transistor A 1006 PDF