Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    LTE42008R Search Results

    LTE42008R Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Type PDF
    LTE42008R Philips Semiconductors NPN microwave power transistor Original PDF
    LTE42008R Philips Semiconductors Microwave Linear Power Transistor Original PDF
    LTE42008R Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    LTE42008R Philips Semiconductors NPN microwave power transistor Scan PDF

    LTE42008R Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: LTE42008R Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)40 I(C) Max. (A)940m Absolute Max. Power Diss. (W)6¥ Minimum Operating Temp (øC) Maximum Operating Temp (øC)200õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)


    Original     		PDF LTE42008R

    SC15

    Abstract: LTE42008R Data Handbook sc15
    Text: DISCRETE SEMICONDUCTORS DATA SHEET LTE42008R NPN microwave power transistor Product specification Supersedes data of June 1992 File under Discrete Semiconductors, SC15 1997 Feb 24 Philips Semiconductors Product specification NPN microwave power transistor


    Original     		PDF LTE42008R OT440A SCA53 127147/00/02/pp12 SC15 LTE42008R Data Handbook sc15

    MCD628

    Abstract: LTE42008R SC15 transistor marking code 1325 ss 297 transistor
    Text: Philips Semiconductors Product specification NPN microwave power transistor LTE42008R FEATURES PINNING - SOT44QA • Diffused emitter ballasting resistors provide excellent current sharing and withstanding a high VSWR PIN 1 collector • Gold metallization realizes very stable characteristics


    OCR Scan     		PDF LTE42008R OT440A OT440A MCD628 OT440A. MCD628 LTE42008R SC15 transistor marking code 1325 ss 297 transistor

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE ObE D • bb 5 3 T 31 Q O m ^ b ? b ■ J V LTE42005S LTE42008R MICROWAVE LINEAR POWER TRANSISTORS N-P-N transistors for use in a common-emitter class-A linear power amplifier up to 4,2 GHz. Diffused emitter ballasting resistors, self-aligned process entirely ion implanted and gold sandwich


    OCR Scan     		PDF LTE42005S LTE42008R

    application for bt 151

    Abstract: LTE42005S LTE42008R R3305
    Text: Jl N AMER PHILIPS/DISCRET E ObE D • bL53131 O D m ^ b ? b I LTE42005S LTE42008R MICROWAVE LINEAR POWER TRANSISTORS N-P-N transistors for use in a common-emitter class-A linear power amplifier up to 4,2 GHz. Diffused emitter ballasting resistors, self-aligned process entirely ion implanted and gold sandwich


    OCR Scan     		PDF bL53131 LTE42005S LTE42008R LTE42005S application for bt 151 LTE42008R R3305

    417 - 162 TRANSISTOR

    Abstract: 1273 transistor
    Text: Philips Semiconductors Product specification NPN microwave power transistor LTE42008R FEATURES PINNING - SOT440A • Diffused emitter ballasting resistors provide excellent current sharing and withstanding a high VSWR PIN • Gold metallization realizes very stable characteristics


    OCR Scan     		PDF OT440A LTE42008R 417 - 162 TRANSISTOR 1273 transistor

    FO-229

    Abstract: No abstract text available
    Text: 69 RF/Microwave Devices Microwave Transistors, Continuous Power cont. Type No Package Outline ' f " (GHz) (V| PL1"> (W) Gpo<2) (dB) CLASS A, MEDIUM POWER (cont.) LA E4001R LA E4 002 S LTE4002S LTE42005S LTE42008R LTE42012R 4.0 4.0 4.0 4.2 4.2 4.2 15 18 18


    OCR Scan     		PDF E4001R LTE4002S LTE42005S LTE42008R LTE42012R T-100 FO-41B FO-229

    BPW22A

    Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
    Text: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey


    OCR Scan     		PDF BS9000, D3007 HE4000B 80RIBUTION BS9000 BPW22A cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8

    Philips Semiconductors Selection Guide

    Abstract: LTE42005S BLS2731-10
    Text: SELECTION GUIDE Page Pulsed power transistors for radar 8 Pulsed power transistors for avionics 8 Linear power transistors 9 CW power transistors 10 Oscillator power transistors 10 Philips Semiconductors Microwave transistors Selection guide PULSED POWER TRANSISTORS FOR RADAR


    OCR Scan     		PDF RX1214B80W RX1214B130Y RX1214B170W RX1214B300Y RX1214B350Y RZ1214B35Y RZ1214B65Y BLS2731-10 BLS2731-20 BLS2731 Philips Semiconductors Selection Guide LTE42005S

    bf0262a

    Abstract: BF0262 OM335 1N5821ID OM336 OM2061 OM926 BUK645 OM2060 BLY94
    Text: Alphanumeric Type Index Typo Page Type Page Type Page Page Type 1N821 1N821A 1N823 1N823A 1N825 11 11 11 11 11 1N5227B 1N5228B 1N5229B 1N5230B 1N5231B 13 13 13 13 13 2N2905A 2N2906 2N2906A 2N2907 2N2907A 17 17 17 17 17 2N6599 2N6600 2N6601 2N7000 2N7002 1N825A


    OCR Scan     		PDF 1N821 1N821A 1N823 1N823A 1N825 1N825A 1N827 1N827A 1N829 1N829A bf0262a BF0262 OM335 1N5821ID OM336 OM2061 OM926 BUK645 OM2060 BLY94

    crystal PHILIPS

    Abstract: by 028 x200 LTE42008R OP214 PTB23001X roe eg aeg power base 60 b 40/085/philips 40/085/aeg power base 60 b
    Text: - 7 = -3 /-fO Preliminary specification Philips Semiconductors NPN silicon planar epitaxial microwave crystal PHILIPS INTERNATIONAL FEATURES • Multiple ion Implantation for optimum concentration profile • Self-alignment process for better reproducibility


    OCR Scan     		PDF OP214 711062b 3-5-52/E crystal PHILIPS by 028 x200 LTE42008R OP214 PTB23001X roe eg aeg power base 60 b 40/085/philips 40/085/aeg power base 60 b

    transistor f6 13003

    Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
    Text: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.


    OCR Scan     		PDF SC08b transistor f6 13003 equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350

    LFE15

    Abstract: LAE4001R BLS2731-50 BLS2731-10
    Text: Philips Semiconductors Microwave Transistors Index ALPHANUMERIC INDEX Types added to the range since the last issue of Handbook SC15 1995 issue are shown in bold print. TYPE PAGE TYPE PAGE BLS2731-10 30 PLB16012U 247 BLS2731-20 33 PLB16030U 252 BLS2731-50


    OCR Scan     		PDF BLS2731-10 BLS2731-20 BLS2731-50 BLS2731-110 BLS2731-150 LBE2003S LBE2009S LFE15600X LLE15180xX LLE15370X LFE15 LAE4001R

    by 028 x200

    Abstract: LTE42008R OP214 PTB23001X philips 5b
    Text: - 7^3 / - 9 NPN silicon planar epitaxial microwave crystal PHILIPS INTERNATIONAL FEATURES • Multiple ion implantation for optimum concentration profile • Self-alignment process for better reproducibility • Gold metallization for very good stability and long life


    OCR Scan     		PDF OP214 711002b 3-5-52/E OP214 by 028 x200 LTE42008R PTB23001X philips 5b

    LTE-3201

    Abstract: FO-163 lte4002s LBE2003S LBE2009S LCE2003S LCE2009S LTE21009R LUE2009S
    Text: N AMER P HILIPS/DISCRETE SSE D • t.bS3T31 D01fc,E32 S ■ T - 5 3-0/ 54 Power Devices MICROWAVE TRANSISTORS LINEAR POWER TRANSISTORS TYPE NO. f PACKAGE OUTLINE GHzv Vce m : ic (mAX - Gpo - ' ' P L l'” . (W (dB) CLASS A, MEDIUM POWER LAË6000Q LBE2003S


    OCR Scan     		PDF bS3T31 D01fc 6000Q OT-100 LBE2003S FO-45 LCE2003S FO-46 LBE2009S LTE-3201 FO-163 lte4002s LCE2009S LTE21009R LUE2009S

    BGY41

    Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
    Text: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.


    OCR Scan     		PDF LCD01 BGY41 BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc

    FET BFW10

    Abstract: KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11
    Text: INDEX _ INDEX OF TYPE NUM BERS The inclusion of a type number in this publication does not necessarily imply its availability. Type no. book section Type no. book section Type no. book section BA220 BA221 BA223 BA281 BA314 SCOI SCOI SCOI SCOI


    OCR Scan     		PDF BA220 BA221 BA223 BA281 BA314 BA315 BA316 BA317 BA318 BA423 FET BFW10 KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE E5E D btiS3131 DOltEBS S • T -Z S-O l Power Devices MICROWAVE TRANSISTORS LINEAR POWER TRANSISTORS TYPE NO. PACKAGE OUTLINE f Vce GHZ y f” Tc ' (mAX ' - - PL1<i. (W Gpo* (dB) CLASS A, MEDIUM POWER LAE6000Q LBE2003S LCE2003S


    OCR Scan     		PDF btiS3131 LAE6000Q LBE2003S LCE2003S LBE2009S LCE2009S LUE2003S LUE2009S OT-100 FO-45

    1721E50R

    Abstract: Marking Codes Philips MARKING CODE 2327E40R marking codes transistors LAE4001R transistor 502 r8 marking marking Code philips
    Text: Philips Semiconductors Microwave Transistors Marking codes MARKING CODES The microwave transistors in this book are normally marked with manufacturer’s name or trademark, type designation and lot identification code. If space on the transistor package is insufficient for full type designation, the following marking


    OCR Scan     		PDF LAE4001R LAE4002S LBE2003S LBE2009S LCE2009S LEE1015T LTE21009R LTE21015R LTE21025R LTE42005S 1721E50R Marking Codes Philips MARKING CODE 2327E40R marking codes transistors transistor 502 r8 marking marking Code philips