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    OP214 Search Results

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    OP214 Price and Stock

    Vishay Semiconductors TSOP2140

    SENSOR REMOTE REC 40.0KHZ 45M
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    DigiKey TSOP2140 Tube 31 1
    • 1 $0.91
    • 10 $0.682
    • 100 $0.49989
    • 1000 $0.42031
    • 10000 $0.4
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    Power Integrations TOP214YN

    IC OFFLINE SW MULT TOP TO220-3
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    DigiKey TOP214YN Tube
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    Power Integrations TOP214YAI

    IC OFFLINE SW MULT TOP TO220-3
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    DigiKey TOP214YAI Tube
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    Bristol Electronics TOP214YAI 180 1
    • 1 $5.376
    • 10 $3.4944
    • 100 $2.509
    • 1000 $2.3294
    • 10000 $2.3294
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    On-Shore Technology Inc OSTOP214200

    TERM BLOCK HDR 21POS VERT 3.81MM
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    DigiKey OSTOP214200 Bulk
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    Anytek Technology Corporation Ltd OP2142000000G

    TERM BLOCK HDR 21POS VERT 3.81MM
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    DigiKey OP2142000000G Bulk 2,000
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    Onlinecomponents.com OP2142000000G
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    • 10000 $0.639
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    Find more OP214 price and stock on Findchips.com

    OP214 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    OP214 Philips Semiconductors NPN Silicon Planar Epitaxial Microwave Crystal Scan PDF
    OP2142000000G Amphenol Anytek Connectors, Interconnects - Terminal Blocks - Headers, Plugs and Sockets - TERM BLOCK HDR 21POS VERT 3.81MM Original PDF

    OP214 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: BSE D N AtlER PHILIPS/DISCRETE • 1,1,53^31 001fc>B33 4 ■ -p -33 ~o\ Power Devices 55 MICROWAVE TRANSISTORS CW POWER TRANSISTORS TYPE NO. PACKAGE OUTLINE ♦ PL G HZ VCE (V ) (W> (« ) Gp nc <% ) CLASS C, MEDIUM POWER PTB23001X PTB23003X PTB23005X FO-41B


    OCR Scan     		PDF 001fc PTB23001X PTB23003X PTB23005X FO-41B PTB32001X PTB32003X PTB32005X

    crystal PHILIPS

    Abstract: by 028 x200 LTE42008R OP214 PTB23001X roe eg aeg power base 60 b 40/085/philips 40/085/aeg power base 60 b
    Text: - 7 = -3 /-fO Preliminary specification Philips Semiconductors NPN silicon planar epitaxial microwave crystal PHILIPS INTERNATIONAL FEATURES • Multiple ion Implantation for optimum concentration profile • Self-alignment process for better reproducibility


    OCR Scan     		PDF OP214 711062b 3-5-52/E crystal PHILIPS by 028 x200 LTE42008R OP214 PTB23001X roe eg aeg power base 60 b 40/085/philips 40/085/aeg power base 60 b

    NE5211D

    Abstract: SA5211D Fiber-optic temperature sensor 850nm photodiode signetics rf Receiver Circuits radio av receiver schematic diagram 850nm photodiode Fiber-optic fiber-optic photodiode for 820nm fiber-optic photodiode for 850nm fiber-optic sensor 820nm NES211
    Text: NE/SA5211 Signetics Transimpedance Amplifier 180MHz Preliminary Specification Linear Products PIN CONFIGURATIO N DESCRIPTION FEATURES The NE/SA5211 is a 28ki2 transimpe­ dance, wide-band, low noise amplifier with differential outputs, particularly suit­


    OCR Scan     		PDF NE/SA5211 180MHz) NE/SA5211 28ki2 180MHz 28kS7 50Mb/s BPF31, 850nm NE5211 NE5211D SA5211D Fiber-optic temperature sensor 850nm photodiode signetics rf Receiver Circuits radio av receiver schematic diagram 850nm photodiode Fiber-optic fiber-optic photodiode for 820nm fiber-optic photodiode for 850nm fiber-optic sensor 820nm NES211

    induction cooker fault finding diagrams

    Abstract: TC227 compressor catalogue Vernitron TRANSDUCER b2 str 1265 smps power supply circuit of tv ADC0804-1CD TC225 tesla MAa 741 SPICE model NTC Inrush Current Limiters Thermistor XR558CP
    Text: BOOK IC11 LINEAR PRODUCTS page Selection guide Functional in dex. 5 Numerical in d e x .


    OCR Scan     		PDF

    40XA

    Abstract: NE521
    Text: NE/SA5211 Signetics Transimpedance Amplifier 180MHz Preliminary Specification Linear Products DESCRIPTION FEATURES The NE/SA5211 is a 28k£2 transimpe­ dance, wide-band, low noise amplifier with differential outputs, particularly suit­ able for signal recovery in fiber optic


    OCR Scan     		PDF NE/SA5211 180MHz) NE/SA5211 180MHz 28ki2 BPF31, B50nm NE5211 E5214 AB1432. 40XA NE521

    by 028 x200

    Abstract: LTE42008R OP214 PTB23001X philips 5b
    Text: - 7^3 / - 9 NPN silicon planar epitaxial microwave crystal PHILIPS INTERNATIONAL FEATURES • Multiple ion implantation for optimum concentration profile • Self-alignment process for better reproducibility • Gold metallization for very good stability and long life


    OCR Scan     		PDF OP214 711002b 3-5-52/E OP214 by 028 x200 LTE42008R PTB23001X philips 5b

    OP222

    Abstract: FO-91 TRANSISTOR package FO-91 d 1047 transistor PTB23001X PTB23005X PTB32001X PTB32003X FO-41-B PTB42001X
    Text: H AMER PHILIPS/DISCRETE BSE D • bfc,S3T31 D01b533 4 ■ f - 33-£7/ Power Devices MICROWAVE TRANSISTORS CW POWER TRANSISTORS TYPE NO. PACKAGE OUTLINE t Gp PL GHZ VC E (V> <w> (dB) " ; nc (%> CLASS C, MEDIUM POWER PTB23001X PTB23Û03X PTB23005X FO-41B FO-41B


    OCR Scan     		PDF PTB23001X FO-41B PTB23Ã PTB23005X PTB32001X PTB32003X OP222 FO-91 TRANSISTOR package FO-91 d 1047 transistor FO-41-B PTB42001X