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    TIP30BF Search Results

    TIP30BF Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TIP30BF Philips Semiconductors Silicon Epitaxial Power Transistor Original PDF

    TIP30BF Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: TIP30BF Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)120 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)14 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100u° @V(CBO) (V) (Test Condition)60 V(CE)sat Max. (V).70 @I(C) (A) (Test Condition)1.0


    Original
    TIP30BF PDF

    I8212

    Abstract: No abstract text available
    Text: TIP30F TIP30AF; TIP30BF TIP30CF: TIP30DF PHILIPS INTERNATIONAL 5 bE D I 7 1 1 DflEb [IDM3 4 bb 7 G 0 « P H I N SILICON EPITAXIAL POWER TRANSISTORS PNP silicon power transistor in a SOT186 envelope with an electrically insulated mounting base, for use in audio output stages and for general purpose amplifier and high-speed switching applications.


    OCR Scan
    TIP30F TIP30AF; TIP30BF TIP30CF: TIP30DF OT186 TIP29F, TIP29AF, TIP29BF, TIP29CF I8212 PDF

    Untitled

    Abstract: No abstract text available
    Text: TIP30F TIP30AF; TIP30BF T1P30CF; TIP30DF J SILICON EPITAXIAL POWER TRANSISTORS PNP silicon power transistor in a SOT186 envelope with an electrically insulated mounting base, fo r use in audio output stages and for general purpose amplifier and high-speed switching applications.


    OCR Scan
    TIP30F TIP30AF; TIP30BF T1P30CF; TIP30DF OT186 TIP29F, TIP29AF, TIP29BF, TIP29CF PDF

    30BF

    Abstract: TIP30DF TIP3 TIP29AF TIP29BF TIP29CF TIP29DF TIP29F TIP30AF TIP30BF
    Text: TIP30F TIP30AF; TIP30BF TIP30CF: TIP30DF PHILIPS INTERNATIONAL Sb E D I 7110ä2b 00M34bb 700 « P H I N SILICON EPITAXIAL POWER TRANSISTORS T - & - IT PNP silicon power transistor in a S O T 186 envelope w ith an electrically insulated mounting base, for use in audio output stages and for general purpose am plifier and high-speed switching applications.


    OCR Scan
    TIP30F TIP30AF; TIP30BF TIP30CF: TIP30DF 00M34bb T-33-IT OT186 TIP29F, TIP29AF, 30BF TIP30DF TIP3 TIP29AF TIP29BF TIP29CF TIP29DF TIP29F TIP30AF TIP30BF PDF

    30df

    Abstract: AI mm sot 553 TIP29BF TIP29CF TIP29DF TIP29F TIP30AF TIP30BF TIP30CF TIP30DF
    Text: TIP30F TIP30AF; TIP30BF ^ T1P30CF; TIP30DF SILICON EPITAXIAL POWER TRANSISTORS PNP silicon power transistor in a S O T 1 8 6 envelope with an electrically insulated mounting base, for use in audio output stages and for general purpose amplifier and high-speed switching applications.


    OCR Scan
    TIP30F TIP30AF; TIP30BF TIP30CF; TIP30DF OT186 TIP29F, T1P29AF, TIP29BF, TIP29CF 30df AI mm sot 553 TIP29BF TIP29DF TIP29F TIP30AF TIP30BF TIP30CF TIP30DF PDF

    Untitled

    Abstract: No abstract text available
    Text: T1P29F TIP29AF; TIP29BF TIP29CF; TIP29DF J SILICON EPITAXIAL POWER TRANSISTORS NPN silicon power transistors in a SOT186 envelope with an electrically insulated mounting base, intended fo r use in audio output stages, general purpose amplifier and high-speed switching applications.


    OCR Scan
    T1P29F TIP29AF; TIP29BF TIP29CF; TIP29DF OT186 TIP30F, TIP30AF, TIP30BF, TIP30CF PDF

    TIP290

    Abstract: TIP29CF TIP30CF TIP29AF TIP29BF TIP29DF TIP29F TIP30AF TIP30BF TIP30DF
    Text: T1P29F TIP29AF; TIP29BF TIP29CF; TIP29DF SILICON EPITAXIAL POWER TRANSISTORS NPN silicon power transistors in a SOT186 envelope w ith an electrically insulated mounting base, intended fo r use in audio o u tp u t stages, general purpose am plifier and high-speed switching applications.


    OCR Scan
    T1P29F TIP29AF; TIP29BF TIP29CF; TIP29DF OT186 TIP30F, TIP30AF, TIP30BF, TIP30CF TIP290 TIP29CF TIP29AF TIP29BF TIP29DF TIP29F TIP30AF TIP30BF TIP30DF PDF

    TIP29F

    Abstract: TIP30CF TIP29AF TIP29BF TIP29CF TIP29DF TIP30AF TIP30BF TIP30DF TIP30F
    Text: TIP29F TIP29AF; TIP29BF TIP29CF; TIP29DF PHILIPS INTERNATIONAL SbE D • 7110flSb 0043452 SILICON EPITAXIAL POWER TRANSISTORS lib ■ P H I N ' 7 -3 3 -0 7 NPN silicon power transistors in a SOT186 envelope with an electrically insulated mounting base, intended for use in audio output stages, general purpose amplifier and high-speed switching applications.


    OCR Scan
    TIP29F TIP29AF; TIP29BF TIP29CF; TIP29DF 7110flSb OT186 TIP30F, TIP30AF, TIP30BF, TIP29F TIP30CF TIP29AF TIP29BF TIP29CF TIP29DF TIP30AF TIP30BF TIP30DF TIP30F PDF