Untitled
Abstract: No abstract text available
Text: TIP29DF Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)120 V(BR)CBO (V)160 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)14 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100u° @V(CBO) (V) (Test Condition)90 V(CE)sat Max. (V).70 @I(C) (A) (Test Condition)1.0
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TIP29DF
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Untitled
Abstract: No abstract text available
Text: T1P29F TIP29AF; TIP29BF TIP29CF; TIP29DF J SILICON EPITAXIAL POWER TRANSISTORS NPN silicon power transistors in a SOT186 envelope with an electrically insulated mounting base, intended fo r use in audio output stages, general purpose amplifier and high-speed switching applications.
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T1P29F
TIP29AF;
TIP29BF
TIP29CF;
TIP29DF
OT186
TIP30F,
TIP30AF,
TIP30BF,
TIP30CF
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TIP290
Abstract: TIP29CF TIP30CF TIP29AF TIP29BF TIP29DF TIP29F TIP30AF TIP30BF TIP30DF
Text: T1P29F TIP29AF; TIP29BF TIP29CF; TIP29DF SILICON EPITAXIAL POWER TRANSISTORS NPN silicon power transistors in a SOT186 envelope w ith an electrically insulated mounting base, intended fo r use in audio o u tp u t stages, general purpose am plifier and high-speed switching applications.
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T1P29F
TIP29AF;
TIP29BF
TIP29CF;
TIP29DF
OT186
TIP30F,
TIP30AF,
TIP30BF,
TIP30CF
TIP290
TIP29CF
TIP29AF
TIP29BF
TIP29DF
TIP29F
TIP30AF
TIP30BF
TIP30DF
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TIP29F
Abstract: TIP30CF TIP29AF TIP29BF TIP29CF TIP29DF TIP30AF TIP30BF TIP30DF TIP30F
Text: TIP29F TIP29AF; TIP29BF TIP29CF; TIP29DF PHILIPS INTERNATIONAL SbE D • 7110flSb 0043452 SILICON EPITAXIAL POWER TRANSISTORS lib ■ P H I N ' 7 -3 3 -0 7 NPN silicon power transistors in a SOT186 envelope with an electrically insulated mounting base, intended for use in audio output stages, general purpose amplifier and high-speed switching applications.
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TIP29F
TIP29AF;
TIP29BF
TIP29CF;
TIP29DF
7110flSb
OT186
TIP30F,
TIP30AF,
TIP30BF,
TIP29F
TIP30CF
TIP29AF
TIP29BF
TIP29CF
TIP29DF
TIP30AF
TIP30BF
TIP30DF
TIP30F
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Untitled
Abstract: No abstract text available
Text: T1P29F TIP29AF; TIP29BF TIP29CF; TIP29DF PHILIPS INTERNATIONAL SbE D • 711002b 0043452 lib ■ P H I N ' SILICO N EPITAXIAL POW ER TR A NSISTO R S T-33-07 NPN silicon power transistors in a S O T 186 envelope w ith an electrically insulated mounting base,
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T1P29F
TIP29AF;
TIP29BF
TIP29CF;
TIP29DF
711002b
T-33-07
TIP29F
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I8212
Abstract: No abstract text available
Text: TIP30F TIP30AF; TIP30BF TIP30CF: TIP30DF PHILIPS INTERNATIONAL 5 bE D I 7 1 1 DflEb [IDM3 4 bb 7 G 0 « P H I N SILICON EPITAXIAL POWER TRANSISTORS PNP silicon power transistor in a SOT186 envelope with an electrically insulated mounting base, for use in audio output stages and for general purpose amplifier and high-speed switching applications.
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TIP30F
TIP30AF;
TIP30BF
TIP30CF:
TIP30DF
OT186
TIP29F,
TIP29AF,
TIP29BF,
TIP29CF
I8212
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Untitled
Abstract: No abstract text available
Text: TIP30F TIP30AF; TIP30BF T1P30CF; TIP30DF J SILICON EPITAXIAL POWER TRANSISTORS PNP silicon power transistor in a SOT186 envelope with an electrically insulated mounting base, fo r use in audio output stages and for general purpose amplifier and high-speed switching applications.
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TIP30F
TIP30AF;
TIP30BF
T1P30CF;
TIP30DF
OT186
TIP29F,
TIP29AF,
TIP29BF,
TIP29CF
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