Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TIP29AF Search Results

    TIP29AF Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TIP29AF Philips Semiconductors Silicon Epitaxial Power Transistor Original PDF

    TIP29AF Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: TIP29AF Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)100 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)14 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100u° @V(CBO) (V) (Test Condition)30 V(CE)sat Max. (V).70 @I(C) (A) (Test Condition)1.0


    Original
    PDF TIP29AF

    Untitled

    Abstract: No abstract text available
    Text: T1P29F TIP29AF; TIP29BF TIP29CF; TIP29DF J SILICON EPITAXIAL POWER TRANSISTORS NPN silicon power transistors in a SOT186 envelope with an electrically insulated mounting base, intended fo r use in audio output stages, general purpose amplifier and high-speed switching applications.


    OCR Scan
    PDF T1P29F TIP29AF; TIP29BF TIP29CF; TIP29DF OT186 TIP30F, TIP30AF, TIP30BF, TIP30CF

    TIP290

    Abstract: TIP29CF TIP30CF TIP29AF TIP29BF TIP29DF TIP29F TIP30AF TIP30BF TIP30DF
    Text: T1P29F TIP29AF; TIP29BF TIP29CF; TIP29DF SILICON EPITAXIAL POWER TRANSISTORS NPN silicon power transistors in a SOT186 envelope w ith an electrically insulated mounting base, intended fo r use in audio o u tp u t stages, general purpose am plifier and high-speed switching applications.


    OCR Scan
    PDF T1P29F TIP29AF; TIP29BF TIP29CF; TIP29DF OT186 TIP30F, TIP30AF, TIP30BF, TIP30CF TIP290 TIP29CF TIP29AF TIP29BF TIP29DF TIP29F TIP30AF TIP30BF TIP30DF

    TIP29F

    Abstract: TIP30CF TIP29AF TIP29BF TIP29CF TIP29DF TIP30AF TIP30BF TIP30DF TIP30F
    Text: TIP29F TIP29AF; TIP29BF TIP29CF; TIP29DF PHILIPS INTERNATIONAL SbE D • 7110flSb 0043452 SILICON EPITAXIAL POWER TRANSISTORS lib ■ P H I N ' 7 -3 3 -0 7 NPN silicon power transistors in a SOT186 envelope with an electrically insulated mounting base, intended for use in audio output stages, general purpose amplifier and high-speed switching applications.


    OCR Scan
    PDF TIP29F TIP29AF; TIP29BF TIP29CF; TIP29DF 7110flSb OT186 TIP30F, TIP30AF, TIP30BF, TIP29F TIP30CF TIP29AF TIP29BF TIP29CF TIP29DF TIP30AF TIP30BF TIP30DF TIP30F

    Untitled

    Abstract: No abstract text available
    Text: T1P29F TIP29AF; TIP29BF TIP29CF; TIP29DF PHILIPS INTERNATIONAL SbE D • 711002b 0043452 lib ■ P H I N ' SILICO N EPITAXIAL POW ER TR A NSISTO R S T-33-07 NPN silicon power transistors in a S O T 186 envelope w ith an electrically insulated mounting base,


    OCR Scan
    PDF T1P29F TIP29AF; TIP29BF TIP29CF; TIP29DF 711002b T-33-07 TIP29F

    I8212

    Abstract: No abstract text available
    Text: TIP30F TIP30AF; TIP30BF TIP30CF: TIP30DF PHILIPS INTERNATIONAL 5 bE D I 7 1 1 DflEb [IDM3 4 bb 7 G 0 « P H I N SILICON EPITAXIAL POWER TRANSISTORS PNP silicon power transistor in a SOT186 envelope with an electrically insulated mounting base, for use in audio output stages and for general purpose amplifier and high-speed switching applications.


    OCR Scan
    PDF TIP30F TIP30AF; TIP30BF TIP30CF: TIP30DF OT186 TIP29F, TIP29AF, TIP29BF, TIP29CF I8212

    Untitled

    Abstract: No abstract text available
    Text: TIP30F TIP30AF; TIP30BF T1P30CF; TIP30DF J SILICON EPITAXIAL POWER TRANSISTORS PNP silicon power transistor in a SOT186 envelope with an electrically insulated mounting base, fo r use in audio output stages and for general purpose amplifier and high-speed switching applications.


    OCR Scan
    PDF TIP30F TIP30AF; TIP30BF T1P30CF; TIP30DF OT186 TIP29F, TIP29AF, TIP29BF, TIP29CF