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    TO247 4L Search Results

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    TO247 4L Price and Stock

    onsemi NCP-NCV51561TO2474LGEVB

    NCP/NCV51561 EVB OPN
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    DigiKey NCP-NCV51561TO2474LGEVB Bulk 1
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    Avnet Americas NCP-NCV51561TO2474LGEVB Bulk 42 Weeks, 6 Days 1
    • 1 $118.75
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    Mouser Electronics NCP-NCV51561TO2474LGEVB
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    Newark NCP-NCV51561TO2474LGEVB Bulk 1
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    NCP-NCV51561TO2474LGEVB Bulk 1
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    New Advantage Corporation NCP-NCV51561TO2474LGEVB 5 1
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    onsemi NCP-NCV51152TO2474LGEVB

    Power Management IC Development Tools EVB WITH TO-247-4L TYPE POWER S/W FOR NCP51152BADR2G / NCP51152CADR2G
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    Mouser Electronics NCP-NCV51152TO2474LGEVB
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    onsemi NCP-NCV51752TO2474LGEVB

    Power Management IC Development Tools EVB WITH TO-247-4L TYPE POWER S/W FOR NCP51752CDDR2G / NCP51752DBDR2G
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    Mouser Electronics NCP-NCV51752TO2474LGEVB
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    Toshiba America Electronic Components TW045Z120C,S1F

    TO2474L N CHAN 1200V
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    TTI TW045Z120C,S1F Tube 30
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    Toshiba America Electronic Components TW060Z120C,S1F

    TO2474L N CHAN 1200V
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    TTI TW060Z120C,S1F Tube 30
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    Find more TO247 4L price and stock on Findchips.com

    TO247 4L Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    C03DE220HV

    Abstract: STC03DE220HV
    Text: STC03DE220HV Hybrid emitter switched bipolar transistor ESBT 2200 V - 3 A - 0.33 Ω Features . VCS ON IC RCS(ON) 1V 3A 0.33 Ω • Low equivalent on resistance ■ Very fast-switch, up to 150 kHz ■ Very low CISS driven by RG = 4.7 Ω 1 23 4 TO247-4L HV


    Original     		PDF STC03DE220HV O247-4L STC03DE220HV C03DE220HV

    C03DE220HV

    Abstract: 12VBS stc03de220hv
    Text: STC03DE220HV Hybrid emitter switched bipolar transistor ESBT 2200 V - 3 A - 0.33 Ω Features . VCS ON IC RCS(ON) 1V 3A 0.33 Ω • Low equivalent on-resistance ■ Very fast switching, up to 150 kHz ■ Very low CISS driven by RG = 4.7 Ω 1 23 4 TO247-4L HV


    Original     		PDF STC03DE220HV O247-4L STC03DE220HV C03DE220HV 12VBS

    Untitled

    Abstract: No abstract text available
    Text: STC03DE220HV Hybrid emitter switched bipolar transistor ESBT 2200 V - 3 A - 0.33 Ω Features . VCS ON IC RCS(ON) 1V 3A 0.33 Ω • Low equivalent on-resistance ■ Very fast switching, up to 150 kHz ■ Very low CISS driven by RG = 4.7 Ω 23 4 1 TO247-4L HV


    Original     		PDF STC03DE220HV O247-4L STC03DE220HV

    SOT-263

    Abstract: MS-013AC 100H01
    Text: Industry Name 075E04 075E05 076E03S 100H01 100H03 D2PAK D2PAK, 4-lead D2PAK, 6-lead DO-214AC DO34 DPAK I-PAK MO-150AH MS-012AA MS-013AC MS-013AD SC-43 SC-59 SC-62 SC-70 SC-73 SC-74 SC-75 SC-76 SC-79 SC-88 SC-88A SC-89 SMA SO-20 SO-24 SO-8 SSOP28 TO-126 TO-202


    Original     		PDF 075E04 075E05 076E03S 100H01 100H03 DO-214AC MO-150AH MS-012AA MS-013AC MS-013AD SOT-263

    IRU1239SC

    Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
    Text: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK


    Original     		PDF 100MT160PAPBF 100MT160PA 100MT160PBPBF IRU1239SC iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter

    Untitled

    Abstract: No abstract text available
    Text: GenX3TM 1200V IGBTs VCES = 1200V IC110 = 20A VCE sat ≤ 2.5V IXGA20N120A3 IXGP20N120A3 IXGH20N120A3 Ultra-Low Vsat PT IGBTs for up to 3 kHz Switching TO-263 AA (IXGA) G E C (Tab) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		PDF IC110 IXGA20N120A3 IXGP20N120A3 IXGH20N120A3 O-263 O-220AB 20N120A3

    Untitled

    Abstract: No abstract text available
    Text: IXYA20N120C3HV IXYP20N120C3 IXYH20N120C3 1200V XPTTM GenX3TM IGBTs High-Speed IGBT for 20-50 kHz Switching VCES = IC110 = VCE sat  tfi(typ) = 1200V 20A 3.4V 108ns TO-263HV (IXYA) G E Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C


    Original     		PDF IXYA20N120C3HV IXYP20N120C3 IXYH20N120C3 IC110 108ns O-263HV 20N120C3

    LE79Q2281

    Abstract: 1N6761-1 2N2369AU 2N2907AUB BR17 datasheet transistor SI 6822 Dimming LED aplications Dimming LED Driver aplications GC4600 IC ZL70572
    Text: Product Portfolio 2013-2014 ng-edge Embed Power Matters. About Microsemi Microsemi Corporation is a leading provider of semiconductor solutions differentiated by power, security, reliability and performance. The company concentrates on providing solutions for applications where power matters, security


    Original     		PDF

    G20N120

    Abstract: IXGA20N120A3 IXGP20N120A3 IXGH20N120A3
    Text: GenX3TM 1200V IGBTs VCES = 1200V IC110 = 20A VCE sat ≤ 2.5V IXGA20N120A3 IXGP20N120A3 IXGH20N120A3 Ultra-Low Vsat PT IGBTs for up to 3 kHz Switching TO-263 AA (IXGA) G E C (Tab) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		PDF IC110 IXGA20N120A3 IXGP20N120A3 IXGH20N120A3 O-263 O-220AB 20N120A3 G20N120 IXGA20N120A3 IXGP20N120A3 IXGH20N120A3

    IXAN0022

    Abstract: KU4-499 KU4-495 KU4-498 isoplus ixys cross KU4499 isoplus ixys mounting KU3-381 4490 mosfet
    Text: IXAN0022 Capitalizing on the Advantages of ISOPLUS Products Introduction IXYS Corporation offers unique power packages with internal isolation, and performance and reliability advantages. The IXYS isolated packages include ISOPLUS220TM, ISOPLUS247TM, ISOPLUS


    Original     		PDF IXAN0022 ISOPLUS220TM, ISOPLUS247TM, ISOPLUS264 ISOPLUS220, ISOLPUS247 advantKU4-498/X ISOPLUS220 KU4-498/X O-247 IXAN0022 KU4-499 KU4-495 KU4-498 isoplus ixys cross KU4499 isoplus ixys mounting KU3-381 4490 mosfet

    datasheet of IC 4511

    Abstract: A 4503 ic 4407 ic data 4502 smd ic IC 4511 smd ic 4406 4392 ic equivalent b42 sot223 4410 smd DO-203AB Package
    Text: FOD Document Numbers for Package Outlines Legend: E=Electronic Format, P=Part Marking T=Tape&Reel, F=Available on FOD, #=No.of Pages E P T F # E P T F # HEXFET 4200 UltraFast/HEXFRED 4203 Micro3 SOT-23 4301 X 1 SMB 4381 X X Micro8 4302 X 1 SMC 4382 X X SO-8


    Original     		PDF OT-23) SMD-220, O-263) OT-223 O-261AA) O-220AB O-252AA) O-220AC datasheet of IC 4511 A 4503 ic 4407 ic data 4502 smd ic IC 4511 smd ic 4406 4392 ic equivalent b42 sot223 4410 smd DO-203AB Package

    20N120A3

    Abstract: IXGH24N120C3 20N120 G20N120
    Text: Preliminary Technical Information VCES = 1200V IC110 = 20A VCE sat ≤ 2.5V IXGA20N120A3 IXGH20N120A3 IXGP20N120A3 GenX3TM 1200V IGBT Ultra-low Vsat PT IGBTs for up to 3 kHz switching TO-263 (IXGA) G E Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C


    Original     		PDF IC110 IXGA20N120A3 IXGH20N120A3 IXGP20N120A3 O-263 O-220 20N120A3 IXGH24N120C3 20N120 G20N120

    IXYP20N120C3

    Abstract: No abstract text available
    Text: Advance Technical Information IXYP20N120C3 IXYH20N120C3 1200V XPTTM GenX3TM IGBTs VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 20A 4.0V 108ns TO-220 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C


    Original     		PDF IXYP20N120C3 IXYH20N120C3 IC110 O-220 108ns O-247 20N120C3

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information 1200V XPTTM GenX3TM IGBTs VCES IC110 VCE sat tfi(typ) IXYP20N120C3 IXYH20N120C3 High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 20A 4.0V 108ns TO-220 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C


    Original     		PDF IC110 IXYP20N120C3 IXYH20N120C3 108ns O-220 20N120C3

    19n50

    Abstract: megamos 48 a 1712 mosfet lhi 778 megamos N-channel MOSFET 800v to-247 IXTM19N50 LHi 978 megamos 13 H100
    Text: I X Y S CORP 10E ° 4Liflt.2ab 000035b M 1 I - 3 7 '/ S MegaMOS FETs D IX Y S IXTH19N50, 45 IXTM19N50, 45 M AXIM UM RATINGS Parameter Sym. IXTH19N45 IXTM19N45 IXTH19N50 IXTM19N50 Unit Drain-Source Voltage 1 Vd s s 450 500 Vdc Vdgr 450 500 Vdc Drain-Gate Voltage (Rq s - 1-OMft) (1)


    OCR Scan     		PDF IXTH19N45 IXTH19N50 IXTM19N45 IXTM19N50 000035b 19n50 megamos 48 a 1712 mosfet lhi 778 megamos N-channel MOSFET 800v to-247 LHi 978 megamos 13 H100

    6n60a

    Abstract: IXTM6N60 6n60 600 volt n channel power mosfet
    Text: I X Y S CO RP löE D • 4L,abS2b O Q O D b l O 3 ■ IXTP6N60, IXTM6N60 □ IX Y S 6 AMPS, 600 V, 1.2S/1.5Q MAXIMUM RATINGS Parameter IXTP6N60 IXTM6N60 Sym. Drain-Source Voltage 1 Drain-Gale Voltage (RGS=1.0 MQ) (1) Gate-Source Voltage Continuous Gate-Source Voltage Transient


    OCR Scan     		PDF IXTP6N60 IXTM6N60 IXTP6N60, Drain-Sour420 O-204 O-220 O-247 6n60a 6n60 600 volt n channel power mosfet

    Untitled

    Abstract: No abstract text available
    Text: I X Y S CORP ID E D I 4Lflba2fei D0003Ö3 7 | □IXYS T L 5 5 '- ¿ . y ADVANCED TECHNICAL DATA SHEET* „TM M OSBLOC MAXIMUM RATINGS DATA SH EET NO. 41009B IXGQ100N50Y4 IGBT MODULE T c = 25 °C unless otherwise Indicated Conditions Rating Value V cES 500


    OCR Scan     		PDF D0003 41009B IXGQ100N50Y4

    Untitled

    Abstract: No abstract text available
    Text: RURG5070, RURG5080, RURG5090, RURG50100 ïU m a r r is 50A, 700V - 1000V Ultrafast Diodes April 1995 Features Package • Ultrafast with Soft R JEDEC STYLE 2 LEAD TO-247 • Operating Tem p eratu


    OCR Scan     		PDF RURG5070, RURG5080, RURG5090, RURG50100 O-247 125ns 125ns)

    Untitled

    Abstract: No abstract text available
    Text: I x Y s CORP ID E D | 4L,flfe.*E2b DOOD4D3 =1 | □IXYS ADVANCED TECHNICAL DATA SHEET* DATA SHEET NO. 41002D _ IXGQ75N100Y4 MOSBLOC IGBT MODULE MAXIMUM RATINGS T c = 25 °C unless otherwise Indicated Conditions


    OCR Scan     		PDF 41002D IXGQ75N100Y4

    5n100

    Abstract: 5N100A
    Text: □IXYS Standard Power MOSFET IXTH/IXTM 5 N100 IXTH/IXTM 5 N100A vDSS ^D25 1000 V 1000 V 5A 5A DDS on 2.4 2.0 ft ft N-Channel Enhancement Mode Symbol Test Conditions V DSS Tj = 25 °C to 150°C 1000 V v DGR Tj = 25°C to 150°C; RGS = 1 MQ 1000 V VGS V GSM


    OCR Scan     		PDF N100A O-247 O-204 O-204 O-247 4bflb52b 5n100 5N100A

    38N60

    Abstract: No abstract text available
    Text: Ultra-Low VCE sat IGBT IXGH 38N60 Symbol Test Conditions VCES ^ VCGR Tj = 25°C to 150°C; RGE= 1 M fi Maximum Ratings = 25°C to 150°C 600 V 600 V v GES Continuous ±20 V v GEM Transient ±30 V ^C25 Tc = 25°C 76 A ^C90 Tc = 90°C 38 A ^CM Tc = 25°C, 1 ms


    OCR Scan     		PDF 38N60 O-247 4bflb22b 38N60

    MOSFET 10n60

    Abstract: 10N60A ir 10n60 10N60 IXTH10N60 IXTM10N60 10N60R 3N90R
    Text: I X Y S CORP IflE D • 4L,ab22b OOOObO'ï ? ■ □IXYS MAXIMUM RATINGS , 'T '2 ° 1 Parameter Sym. Drain-Source Voltage 1 Drain-Qate Voltage (RGS=1.0 MQ) (1) Gate-Source Voltage Continuous Gate-Source Voltage Transient Drain Current Continuous (Tc =25°C)


    OCR Scan     		PDF 4bab22b IXTH10N60, IXTM10N60 55Q/0 IXTH10N60 O-247 300ns, MOSFET 10n60 10N60A ir 10n60 10N60 10N60R 3N90R

    Untitled

    Abstract: No abstract text available
    Text: ! a i x Y S Preliminary data V CES IXSX50N60AU1 IXSX50N60AU1S IGBT with Diode ^C25 vw CE sat Combi Pack <?C S h o r t C ir c u it S O A C a p a b ilit y = 600 V = 75 A = 2.7 V TO-247 Hole-less SMD (50N60AU1S) G OE Symbol Test Conditions V CES T j = 25°C to 150 °C


    OCR Scan     		PDF IXSX50N60AU1 IXSX50N60AU1S O-247 50N60AU1S)

    MOSFET 11N80

    Abstract: 11N80 MOSFET 14n80 ns800 13n80
    Text: IXFH 11/13/14/15 N80 IXFM 11/13/14/15 N80 nixYS H iP e r F E T “ P o w e r M O S F E T IXFU/IXFM IXFH/IXFM IXFH/IXFM IXFH/IXFM N-Channel Enhancement Mode High dv/dt, Low t^, HDMOS Family 11N80 13N80 14N80 15N80 Symbol Test Conditions VDSS VDGR Tj = 25°C to 150°C


    OCR Scan     		PDF 11N80 13N80 14N80 15N80 MOSFET 11N80 MOSFET 14n80 ns800