SOT-263
Abstract: MS-013AC 100H01
Text: Industry Name 075E04 075E05 076E03S 100H01 100H03 D2PAK D2PAK, 4-lead D2PAK, 6-lead DO-214AC DO34 DPAK I-PAK MO-150AH MS-012AA MS-013AC MS-013AD SC-43 SC-59 SC-62 SC-70 SC-73 SC-74 SC-75 SC-76 SC-79 SC-88 SC-88A SC-89 SMA SO-20 SO-24 SO-8 SSOP28 TO-126 TO-202
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075E04
075E05
076E03S
100H01
100H03
DO-214AC
MO-150AH
MS-012AA
MS-013AC
MS-013AD
SOT-263
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KMZ50
Abstract: MS-012AA BP317 SC17 Wheatstone Bridge amplifier
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D315 KMZ50 Magnetic field sensor Preliminary specification Supersedes data of 1996 Nov 15 File under Discrete Semiconductors, SC17 1998 Mar 24 Philips Semiconductors Preliminary specification Magnetic field sensor KMZ50
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M3D315
KMZ50
SCA57
115106/00/02/pp8
KMZ50
MS-012AA
BP317
SC17
Wheatstone Bridge amplifier
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TDA3606
Abstract: TDA3606T
Text: INTEGRATED CIRCUITS DATA SHEET TDA3606 Multiple voltage regulator with battery detection Product specification Supersedes data of 1995 Dec 19 File under Integrated Circuits, IC01 1997 Jul 15 Philips Semiconductors Product specification Multiple voltage regulator with battery
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TDA3606
TDA3606
swi31
SCA55
547027/1200/02/pp16
TDA3606T
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BP317
Abstract: MS-012AA PHP1035
Text: DISCRETE SEMICONDUCTORS DATA SHEET PHP1035 P-channel enhancement mode MOS transistor Preliminary specification File under Discrete Semiconductors, SC13b 1998 Feb 18 Philips Semiconductors Preliminary specification P-channel enhancement mode MOS transistor
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PHP1035
SC13b
OT96-1
SCA57
135108/00/01/pp8
BP317
MS-012AA
PHP1035
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tea1104 charger ref design
Abstract: charger IC NiMh 4 ch AN95085 AN95085 APPLICATION NOTES nimh charger lm317 nimh lm317 BC548 and its h parameter values
Text: INTEGRATED CIRCUITS DATA SHEET TEA1104; TEA1104T Cost effective battery monitor and fast charge IC for NiCd and NiMH chargers Objective specification File under Integrated Circuits, IC03 1996 Feb 26 Philips Semiconductors Objective specification Cost effective battery monitor and fast
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TEA1104;
TEA1104T
SCDS47
417021/1100/02/pp16
tea1104 charger ref design
charger IC NiMh 4 ch
AN95085
AN95085 APPLICATION NOTES
nimh charger lm317
nimh lm317
BC548 and its h parameter values
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GP 821
Abstract: BLT61 MS-012AA
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D315 BLT61 UHF power transistor Preliminary specification Supersedes data of 1996 Feb 05 1998 Jan 28 Philips Semiconductors Preliminary specification UHF power transistor BLT61 PINNING FEATURES • High efficiency PIN • High gain
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M3D315
BLT61
OT96-1
MBK187
SCA57
125108/00/02/pp8
GP 821
BLT61
MS-012AA
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transistor bd139
Abstract: philips power transistor bd139 BD139 smd transistor zi
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D315 BLT71/8 UHF power transistor Product specification Supersedes data of 1996 Feb 06 1997 Oct 14 Philips Semiconductors Product specification UHF power transistor BLT71/8 PINNING - SOT96-1 FEATURES • High efficiency
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M3D315
BLT71/8
OT96-1
SCA55
127067/00/02/pp12
transistor bd139
philips power transistor bd139
BD139
smd transistor zi
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PHN1015
Abstract: No abstract text available
Text: Philips Semiconductors Product specification N-channel TrenchMOS transistor Logic level FEATURES PHN1015 SYMBOL • ’Trench’ technology • Low on-state resistance • Fast switching • Low-profile surface mount package • Logic level compatible QUICK REFERENCE DATA
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PHN1015
OT96-1
PHN1015
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PHC20512
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET PHC20512 Complementary enhancement mode MOS transistors Product specification Supersedes data of 1997 Jun 19 File under Discrete Semiconductors, SC13b 1997 Oct 22 Philips Semiconductors Product specification Complementary enhancement mode
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PHC20512
SC13b
OT96-1
SCA55
137107/00/03/pp20
PHC20512
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03ac29
Abstract: HZG336 MS-012AA PHN103T
Text: PHN103T N-channel enhancement mode field-effect transistor Rev. 01 — 28 August 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: PHN103T in SOT96-1 SO8 .
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PHN103T
PHN103T
OT96-1
OT96-1,
03ac29
HZG336
MS-012AA
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SI4884
Abstract: MS-012AA
Text: SI4884 TrenchMOS logic level FET Rev. 02 — 12 April 2002 M3D315 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: SI4884 in SOT96-1 SO8 .
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SI4884
M3D315
SI4884
OT96-1
OT96-1,
MS-012AA
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PHP225
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET PHP225 Dual P-channel enhancement mode MOS transistor Product specification Supersedes data of November 1994 File under Discrete Semiconductors, SC13b 1997 Jun 20 Philips Semiconductors Product specification Dual P-channel enhancement
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PHP225
SC13b
OT96-1
076E03S
MS-012AA
PHP225
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PHP225
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET PHP225 Dual P-channel enhancement mode MOS transistor Product specification Supersedes data of November 1994 File under Discrete Semiconductors, SC13b 1997 Jun 20 Philips Semiconductors Product specification Dual P-channel enhancement
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PHP225
SC13b
OT96-1
SCA54
137107/00/02/pp12
PHP225
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si4800
Abstract: 03af85 MS-012AA Si4800 philips
Text: Si4800 N-channel enhancement mode field-effect transistor Rev. 01 — 13 July 2001 M3D315 Product data 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: Si4800 in SOT96-1 SO8 .
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Si4800
M3D315
Si4800
OT96-1
OT96-1,
03af85
MS-012AA
Si4800 philips
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BP317
Abstract: MS-012AA PHP1025
Text: DISCRETE SEMICONDUCTORS DATA SHEET PHP1025 P-channel enhancement mode MOS transistor Objective specification File under Discrete Semiconductors, SC13b 1998 Feb 18 Philips Semiconductors Objective specification P-channel enhancement mode MOS transistor PHP1025
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PHP1025
SC13b
OT96-1
SCA57
135108/00/01/pp8
BP317
MS-012AA
PHP1025
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tja1050 c
Abstract: SJA1000 TX0 Dominant smd transistor fq TJA1050T model MGS375 PCA82C250 TJA1050 TJA1050T TJA1050U
Text: INTEGRATED CIRCUITS DATA SHEET TJA1050 High speed CAN transceiver Preliminary specification File under Integrated Circuits, IC18 1999 Sep 27 Philips Semiconductors Preliminary specification High speed CAN transceiver TJA1050 FEATURES GENERAL DESCRIPTION • Fully compatible with the “ISO 11898” standard
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TJA1050
TJA1050
285002/01/pp16
tja1050 c
SJA1000 TX0 Dominant
smd transistor fq
TJA1050T model
MGS375
PCA82C250
TJA1050T
TJA1050U
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SAB6456
Abstract: prescaler 256 IC02 98 Functional 1 prescaler 64 MS-012AA SAB6456T divide-by-256
Text: INTEGRATED CIRCUITS DATA SHEET SAB6456 SAB6456T Sensitive 1 GHz divide-by-64/divide-by-256 switchable prescaler Product specification File under Integrated Circuits, IC02 June 1986 Philips Semiconductors Product specification Sensitive 1 GHz divide-by-64/divide-by-256
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SAB6456
SAB6456T
divide-by-64/divide-by-256
SAB6456/SAB6456T
divide-by-64
divide-by-256
SAB6456
prescaler 256
IC02 98 Functional 1
prescaler 64
MS-012AA
SAB6456T
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philips capacitor 1000uf 25V
Abstract: TDA3674AT 1.50 MKT MDA961 TDA3672 TDA3674 TDA3674T TDA3676
Text: INTEGRATED CIRCUITS DATA SHEET TDA3674 Low dropout voltage/quiescent current 5 V voltage regulator with enable Preliminary specification File under Integrated Circuits, IC01 1999 Sep 29 Philips Semiconductors Preliminary specification Low dropout voltage/quiescent current 5 V
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TDA3674
545002/01/pp16
philips capacitor 1000uf 25V
TDA3674AT
1.50 MKT
MDA961
TDA3672
TDA3674
TDA3674T
TDA3676
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865 RF transistor
Abstract: RF Transistor reference "RF Power Modules" microwave transistor 03 Power Transistor MS-012AA SOT391A EU2A sot147a 1117 sot223
Text: DISCRETE SEMICONDUCTORS DATA SHEET Package outlines RF & Microwave Power Transistors and RF Power Modules 1998 Feb 17 File under Discrete Semiconductors, SC19a Philips Semiconductors RF & Microwave Power Transistors and RF Power Modules Package outlines SO8: plastic small outline package; 8 leads; body width 3.9 mm
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SC19a
OT96-1
OT502A
865 RF transistor
RF Transistor reference
"RF Power Modules"
microwave transistor 03
Power Transistor
MS-012AA
SOT391A
EU2A
sot147a
1117 sot223
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PowerMOS Transistors
Abstract: 075E05 MS-012AA SO24 SSOP16 SSOP24
Text: Philips Semiconductors PowerMOS transistors Package outlines PACKAGE OUTLINES Package SOT23 SOT54 TO-92 SOT54variant (TO-92variant) SOT78 (TO-220AB) SOT89 SOT96-1 (SO8) SOT137-1 (SO24) SOT186 (TO-220 exposed tabs) SOT186A (TO-220) SOT223 SOT226 (low-profile TO-220)
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OT54variant
O-92variant)
O-220AB)
OT96-1
OT137-1
OT186
O-220
OT186A
O-220)
OT223
PowerMOS Transistors
075E05
MS-012AA
SO24
SSOP16
SSOP24
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1625AM
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Transimpedance amplifier 140MHz SA5212A DESCRIPTION PIN CONFIGURATION The SA 5212A is a 14ki2 transim pedance, wideband, low noise differential output amplifier, particularly suitable for signal recovery in fiber optic receivers and in any other applications w here very low
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140MHz)
SA5212A
14ki2
140MHz
1625AM
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8002 AUDIO amplifier
Abstract: 8002 audio amplifier 8 pin NE5532 SE663 JIS B 0041 SL003 NE5532N NE5532D8 professional audio power amplifier schematics NE5532AN
Text: Product specification Internally-compensated dual low noise operational amplifier DESCRIPTION Q PIN CONFIGURATIONS The 5532 is a dual high-performance low noise operational amplifier. Compared to most of the standard operational amplifiers, such as the 1458, it shows better noise performance, improved output drive
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NE/SE5532/5532A
OT38-4
E/SE5532/5532A
53-0580A
7110fl2Ej
8002 AUDIO amplifier
8002 audio amplifier 8 pin
NE5532
SE663
JIS B 0041
SL003
NE5532N
NE5532D8
professional audio power amplifier schematics
NE5532AN
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hx 36
Abstract: MLC716 MSA925 Thin-film magnetic resistance "Magnetic Field Sensor" magnetic sensor circuit diagram mgdb04 KMZ11B1 MS-012AA
Text: Philips Semiconductors Preliminary specification Magnetic field sensor KMZ11B1 DESCRIPTION The K M Z 1 1B1 is a sensitive m agnetic field sensor, em ploying the m agnetoresistive effe ct of thin-film perm alloy. Its properties enable this se n so r to be used in a
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KMZ11B1
KMZ11B1
OT96-1
076E03S
MS-012
hx 36
MLC716
MSA925
Thin-film magnetic resistance
"Magnetic Field Sensor"
magnetic sensor circuit diagram
mgdb04
MS-012AA
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MS-012AA
Abstract: TDA3606 TDA3606T
Text: Philips Semiconductors Preliminary specification Multiple voltage regulator with battery detection TDA3606 FEATURES GENERAL DESCRIPTION • One Vp-state controlled regulator The TDA3606 is a low power voltage regulator. It contains: • Regulator and reset outputs operate during load dump
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TDA3606
7110aEt,
MS-012AA
TDA3606
TDA3606T
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