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    TNT SOT Search Results

    TNT SOT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    TNT SOT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC3883

    Abstract: 2N2250 S2000A 2N2222B 2N2244 STi-812 MRF239 2N2362 STI-801 2N2245
    Text: POWER SILICON NPN Item Number Part Number I C 5 10 >= 5 A, 2S01398 2S01402 2S01651 2S01655 2SC2791 2SC2793 2SC3214 2S01185 2S01186 SOT723 ~~6~~~0 15 20 2SC3322 SOT41303 SOT41303 SML41304 2SC3060 SOT41304 SOT41304 SML812 ~~t:~;05 25 30 OTS812 OTS812 OTS812


    Original     		PDF 2S01398 2S01402 2S01651 2S01655 2SC2791 2SC2793 2SC3214 2S01185 2S01186 OT723 2SC3883 2N2250 S2000A 2N2222B 2N2244 STi-812 MRF239 2N2362 STI-801 2N2245

    rca 2n2147

    Abstract: 2N2207 2n2183 rca 2N2196 2N2214 2N2161 2N2222A motorola 2N2204 2n2162 2N2200
    Text: LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 714 BFX69A BFX69A 2N1594 BCW94A 2SC366G 2N1644A 2N2192 2N2192A 2N2192B MPS650 CX904 CX904 2SC943 2SC943 2SC943 KT503B BCW90B BCW90B 2N731 Manufacturer


    Original     		PDF BFX69A 2N1594 BCW94A 2SC366G 2N1644A 2N2192 2N2192A 2N2192B MPS650 rca 2n2147 2N2207 2n2183 rca 2N2196 2N2214 2N2161 2N2222A motorola 2N2204 2n2162 2N2200

    PN2222A MOTOROLA

    Abstract: valvo emihus philco-ford VALVO GMBH 2SC1330 DIODE 6AA 2N709A Elcoma KT503A
    Text: LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 BO 85 90 95 RN5816 RN5B16 RN5818 RN5818 HSE125 HSE210 HSE171 2Nl051 2N2480 2N2479 Manufacturer V(BR)CEO hFE Ie Max A fT (Hz) Cobo V(BR)CBO Max PD Max Derate


    Original     		PDF RN5816 RN5B16 RN5818 HSE125 HSE210 HSE171 2Nl051 2N2480 2N2479 PN2222A MOTOROLA valvo emihus philco-ford VALVO GMBH 2SC1330 DIODE 6AA 2N709A Elcoma KT503A

    2N2222B

    Abstract: 2N2280 2N2307 BSY87 2SC696 Elcoma 2N2244 2N1564 2n2382 Delco
    Text: LOW•POWER SILICON NPN Item Number Part Number Manufacturer >= 50 V, Cont'd 2NS98 2N1492 2N2514 2N339A 2N545 2N719A 2N1975 2N912 2N2520 2N757A See See See See See See See See See See 10 15 20 25 30 35 40 2N758B BC142 2N1564 2N734 2N754 2N742 2N742A 2N560


    Original     		PDF 2NS98 2N1492 2N2514 2N339A 2N545 2N719A 2N1975 2N912 2N2520 2N757A 2N2222B 2N2280 2N2307 BSY87 2SC696 Elcoma 2N2244 2N1564 2n2382 Delco

    transitron

    Abstract: rca 2n1701 BFY46 2N1711 MOTOROLA 2SC109A 2N1666 2N1619 2N1565 2SC1364 ELECTRON CORP
    Text: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 25 30 2N2193B NB312E NB312F NB312X NB312Y 2SC486 2N2389 2N2389 BFY34 SA2710 2SC734 2SC2000M MPS6591 2N2253 2N2253 Sl100 501613 2SC109A 2S0220 A5T2193 2N2351 2N2351A 2N5262 MPS9434 UPI956 HSE146 2SC216


    Original     		PDF 2N2193B NB312E NB312F NB312X NB312Y 2SC486 2N2389 BFY34 SA2710 transitron rca 2n1701 BFY46 2N1711 MOTOROLA 2SC109A 2N1666 2N1619 2N1565 2SC1364 ELECTRON CORP

    2n2224

    Abstract: 2N2222B 2N2244 2N4418 2N2374 2SC321H 2N2250 ESM2369 rca 2N2270 2N2245
    Text: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 15 20 25 30 35 40 45 50 55 -60 65 - 70 EN914 2N708 2N914A 2N914A 2N914A 40219 40219 40221 40221 BSY19 BSY19 BSY19 2N3605A 2N3606A 2S95A 2S95A 2N1708A 2N321 0 BF165 2SC321H 2N2319 2N4264 2N2272


    Original     		PDF EN914 2N708 2N914A BSY19 2N3605A 2N3606A 2n2224 2N2222B 2N2244 2N4418 2N2374 2SC321H 2N2250 ESM2369 rca 2N2270 2N2245

    bcy591x

    Abstract: 2N6429A 2N2196 2N2147 2N2214 2N2161 2SC538A BCW66RG 2N2207 BC521
    Text: LOW-POWER SILICON NPN Item Number Part Number 10 BC382 KSC1072 2SC538A 2SC538A 2SC538A BCX59-9 BCX70J BCY591X TBC337A BCW66RG gg~~iB~ 15 20 BCY59B BCY59B BC171 JE9014 JC501R M02975 2N2916A BFY76 ~~~~~~B BCY59-B BCY59C BCY59C BCY55 BCX59-10 BCY59X BC237C BC237C18


    Original     		PDF BC382 KSC1072 2SC538A BCX59-9 BCX70J BCY591X TBC337A BCW66RG 2N6429A 2N2196 2N2147 2N2214 2N2161 2N2207 BC521

    2SC1675L

    Abstract: 2N2196 2N2214 2N2161 2N2204 LOW-POWER SILICON NPN BF235 TL3643 2n2222 to92 BFX97
    Text: RF LOW-POWER SILICON NPN Item Part Number Number V BR CEO 5 10 15 20 PN2221 2N2218 BSX60 2N2846 2N3015 MPS2222 MPS6532 2N2845 MMBT2222 2N2961 PH2222 UPI2218 2N2219 2N2538 2N3981 2N3981 2N3981 2SC773 2N5028 2N5028 ~~~g~ 25 30 35 -40 45 50 2N2960 A5T2222 BFX94A


    Original     		PDF

    3SM diode

    Abstract: 2N2243 2N2222B 2N2244 2N2282 2N2250 2N2316 2N2249 2N2303 SOT-23 2N2306
    Text: LOW-POWER SILICON NPN Item Number Part Number • 10 MPS5858 BFR50 TIPP31B ST4341 BSW65 BSW65 2N1572 2N738 2N2517 2N755 ~~;:6 15 20 SOR1893 A BSW39-6 BC344 2N2858 2N2852 2N719 2N2509 ESM639 ~~~~ 25 30 2SC696A 2N2890 2N720A BFY80 MPSH04 2N1893 2N2316 BCX31


    Original     		PDF MPS5858 BFR50 TIPP31B ST4341 BSW65 2N1572 2N738 2N2517 2N755 3SM diode 2N2243 2N2222B 2N2244 2N2282 2N2250 2N2316 2N2249 2N2303 SOT-23 2N2306

    2N1674

    Abstract: Emihus 2N1605A 2N755 BC447 2N1724 2N2891 2N1666 BSW39 2N1664
    Text: LOW-POWER SILICON NPN Item Number Part Number • 10 MPS5858 BFR50 TIPP31B ST4341 BSW65 BSW65 2N1572 2N738 2N2517 2N755 ~~;:6 15 20 SOR1893 A BSW39-6 BC344 2N2858 2N2852 2N719 2N2509 ESM639 ~~~~ 25 30 2SC696A 2N2890 2N720A BFY80 MPSH04 2N1893 2N2316 BCX31


    Original     		PDF MPS5858 BFR50 TIPP31B ST4341 BSW65 2N1572 2N738 2N2517 2N755 2N1674 Emihus 2N1605A BC447 2N1724 2N2891 2N1666 BSW39 2N1664

    BC352* CSR

    Abstract: csr BC352 2N936 Emihus 2N828 MPS5143 Bc352 LOW-POWER SILICON PNP 2N850 transitron
    Text: LOW-POWER SILICON PNP Item Number Part Number 10 15 20 30 Motorola Motorola See Index See Index See Index See Index See Index See Index See Index See Index ~ee In~ex See Index Motorola See Index See Index Space Power Genrl Diode Diode Trails See Index See Index


    Original     		PDF MPS5142 MPS5143 2N998 2N3677 2N2411 2N1991 PN5143 2N5143 2N2802 2N2803 BC352* CSR csr BC352 2N936 Emihus 2N828 Bc352 LOW-POWER SILICON PNP 2N850 transitron

    2N907 PNP

    Abstract: 2N1429 transitron Emihus 2N2425 2N2424 2N828 2N850 2N907 LOW-POWER SILICON PNP
    Text: LOW-POWER SILICON PNP Item Number Part Number 10 2N2165 2N2166 2N2162 2N2163 2N2167 2N2164 2N1676 2N1677 2N2002 2N2003 ~~~~~~ 15 20 2N3764A 2N3764A 2N2424 BC201 2N3319 2N2280 2N2281 2N864 ~N14~~ 25 30 2N1428 2N1429 2N864A 2N864A 2N864A 2N4006 2N2177 2N2178


    Original     		PDF 2N2165 2N2166 2N2162 2N2163 2N2167 2N2164 2N1676 2N1677 2N2002 2N2003 2N907 PNP 2N1429 transitron Emihus 2N2425 2N2424 2N828 2N850 2N907 LOW-POWER SILICON PNP

    BUK437-500A

    Abstract: BUK437-500B buk437 S1216
    Text: Philips Components BUK437-500A BUK437-500B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,


    OCR Scan     		PDF BUK437-500A BUK437-500B BUK437 -500A -500B M89-1142/RST BUK437-500A BUK437-500B S1216

    D676A

    Abstract: BD675A BD676A BD677A BD678A BD679A BD680A
    Text: Preliminary specification Philips Semiconductors BD676A/678A/680A Silicon Darlington power transistors 5bE D PHILIPS INTERNATIONAL DESCRIPTION QUICK REFERENCE DATA PNP epitaxial base transistors in a monolithic Darlington circuit in a TO-126 SOT32 plastic envelope


    OCR Scan     		PDF O-126 BD675A, BD677A BD679A D676A/678A/680A 711002b 0042c BD676A BD678A D676A BD675A BD676A BD678A BD680A

    BLF522

    Abstract: URA417 4312 020 366 3909
    Text: Philips Semiconductora Product specification UHF power MOS transistor BLF522 PHILIPS IN T E RN AT IO NA L FEATURES 7 1 3 ,0 fi2 b OOMaTMS STQ M P H I N PIN CONFIGURATION High power gain Easy power control Gold metallization Good thermal stability Withstands full load mismatch


    OCR Scan     		PDF OT171 OT171 BLF522 711Dfl2b 711005b BLF522 URA417 4312 020 366 3909

    Untitled

    Abstract: No abstract text available
    Text: ¿ 1.30 P21 S0 WP P20(SD,'CPj CENTER OF CONNECTER NOTES • I. MATERIAL: SEE TABLE p l a t in g : s e e t a b u 24. l£ i§ J|.;SD HHCJ (g ) day - month 4 _ RûHS COMPLIANT PRODUCT CLE'.IRICAL HARACTEfilSTlCï . CUFWEMT RATlMG.OS-A '.VU HSTANDING .'0LTAGE:5OOV - . C".


    OCR Scan     		PDF

    PCIB24W

    Abstract: No abstract text available
    Text: SK3692 SHEET i OF I REVISION ICÛH APP 19 T IT O 1 7 5 9 3 w DATE REV 4 -1 2 »1 N ! POTITRQNC IN D W R E P BELEyEB THE M M ON THIS □RAMflNS TD K ISL IM L C . SM CE THE TECHNICAL n raraiA T D N a bve n m e o f d-wrgc. t h e u s e r EMPLOTS SUCH INFORMATION AT HB OHN DISCRETIDN


    OCR Scan     		PDF SK3692 PCIB24W400A1 E39tfnva PCIB24W

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,


    OCR Scan     		PDF BUK436W-800A/B BUK436 -800A -800B OT429 T0247)

    K438-1000A

    Abstract: BUK438-1000A BUK438-1000B k4381
    Text: 7=3 f - Æ Ph ilips C o m p o n e n ts Data sheet status Preliminary specification date o f issue March 1991 BUK438-1000A/B PowerMOS transistor SbE D PH IL IP S I N T E R N A T I O N A L GENERAL DESCRIPTION N-channel enhancem ent mode field-effect power transistor in a


    OCR Scan     		PDF BUK438-1OOOA/B 711002b BUK438 -1000A -1000B BUK438-1000A/B 711062b T-39-I5 K438-1000A BUK438-1000A BUK438-1000B k4381

    BUK437-600B

    Abstract: BUK437-600A BUK437 TNT sot
    Text: BUK437-600A BUK437-600B Philips Components PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode liekJ-eftect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,


    OCR Scan     		PDF BUK437-600A BUK437-600B BUK437 -600A -600B 00/nC M89-114imST BUK437-600B BUK437-600A TNT sot

    BUK637-400A

    Abstract: BUK637-400B
    Text: Philips Components BUK637-400A BUK637-400B PowerMOS transistor Fast Recovery Diode FET GENERAL DESCRIPTION N-channel enhancement mode lield-effect power transistor in a plastic envelope. FREDFET with fast recovery reverse diode, particularly suitable for motor control


    OCR Scan     		PDF BUK637-400A BUK637-400B BUK637 -400A -400B M89-1166/RC BUK637-400A BUK637-400B

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE E5E D ^ 5 3 1 3 1 Q030b7D S PowerMOS transistor Fast Recovery Diode FET GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery reverse diode, particularly suitable


    OCR Scan     		PDF Q030b7D BUK637-400A BUK637-400B BUK637 -400A D0S0h74

    pir 500b

    Abstract: No abstract text available
    Text: N AtlER PHILIPS/DISCRETE E5E D • fafa53*131 Q020b6Q 5 PowerMOS transistor Fast Recovery Diode FET BUK637-500A BUK637-500B BUK637-500C GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope.


    OCR Scan     		PDF Q020b6Q BUK637-500A BUK637-500B BUK637-500C 31-is* BUK637 bb53T31 0020bfl4 pir 500b

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors b b 5 3 ^ 31 DDSTEm M il H A P X UHF power transistor BLV194 bTE D — — AUER PHILIPS/DISCRETE FEATURES • Gold metallization ensures excellent reliability. QUICK REFERENCE DATA RF performance at Th = 25 °C in a common emitter test circuit.


    OCR Scan     		PDF BLV194 MRC099 MRC097